|
array(72) {
["id"]=>
string(4) "6173"
["pdf_add"]=>
string(0) ""
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
NULL
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(13) "STS8C5H30L-VB"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.400000"
["gys_id"]=>
string(3) "370"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(107) "SOP8；N+P—Channel沟道,±30V；11/-10.5A；RDS(ON)=11/21mΩ@VGS=10V,VGS=20V；Vth=1 / -0.9~2.2/-2.5V；"
["xl"]=>
string(0) ""
["zzs"]=>
string(13) "VBsemi/微碧"
["zzs_new"]=>
string(13) "VBsemi/微碧"
["zzs_old"]=>
string(23) "VBsemi(微碧半导体)"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
NULL
["fetgn"]=>
NULL
["ldjdy"]=>
NULL
["dl_lxlj"]=>
NULL
["bt_id_vgs_rds"]=>
string(0) ""
["bt_id_vgs_zdz"]=>
string(0) ""
["bt_vgs_sjdh"]=>
string(0) ""
["bt_vds_srdr"]=>
string(0) ""
["gn_zdz"]=>
NULL
["gzwd"]=>
string(0) ""
["azlx"]=>
string(0) ""
["fz_wk"]=>
string(0) ""
["gysqjfz"]=>
string(4) "SOP8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "4000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
NULL
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1711022384"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
NULL
["yqjtd_jianrong"]=>
NULL
["url"]=>
string(10) "c104116173"
}
SELECT a.mpn_td_pintopin,b.* FROM golon_jtg_fet_mosfet_zl_td a LEFT JOIN golon_jtg_fet_mosfet_zl b on a.mpnid=b.id WHERE ( `mpnid` = '165' ) LIMIT 1
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STS8C5H30L-VBVBsemi/微碧SOP8
6173
SOP8；N+P—Channel沟道,±30V；11/-10.5A；RDS(ON)=11/21mΩ@VGS=10V,VGS=20V；Vth=1 / -0.9~2.2/-2.5V；
1Fet类型1：N 和 P 沟道
5Fet功能5：逻辑电平门
2漏源极电压(vdss)2：30V
3电流-连续漏极(id)3：8A，5.4A
4最大功率值4：2W
6工作温度6：150°C（TJ）
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