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SiA929DJ-T1-GE3-VB数据手册

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缓冲
array(1) { [0]=> array(113) { ["id"]=> string(4) "5361" ["gys_id"]=> string(3) "370" ["mlfl_pt"]=> string(33) "晶体管 - FET，MOSFET - 阵列" ["mlfl_yc"]=> string(20) "场效应管(MOSFET)" ["mlfl_kc"]=> NULL ["MFGR_qc"]=> string(0) "" ["zzs"]=> string(23) "VBsemi(微碧半导体)" ["zzsbh"]=> string(18) "SiA929DJ-T1-GE3-VB" ["gysqjfz"]=> string(9) "DFN6(2X2)" ["stock"]=> string(5) "10000" ["stock_dg"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq_zx"]=> string(4) "3000" ["cny"]=> string(0) "" ["price"]=> string(4) "1.18" ["gys_zq"]=> string(6) "1-3天" ["show_price"]=> string(0) "" ["ph"]=> string(3) "23+" ["repalce_bz"]=> string(15) "SiA929DJ-T1-GE3" ["ms"]=> string(87) "2个P沟道,-30V,-4.1A,RDS(ON),38mΩ@10V,42mΩ@4.5V,12Vgs(±V)；-0.7Vth(V)；DFN6(2X2)" ["bjtime"]=> string(1) "0" ["pdf_add"]=> string(0) "" ["addtime"]=> string(10) "1710917456" ["bz"]=> string(0) "" ["xp_num"]=> string(0) "" ["mpn_bm"]=> string(18) "golon_gys_file_new" ["fz_wk"]=> string(3) " - " ["hzcs"]=> string(0) "" ["date"]=> string(0) "" ["member_id"]=> string(1) "0" ["is_ysjg"]=> string(0) "" ["is_jj"]=> string(1) "0" ["is_tax"]=> string(1) "1" ["gys_kclx"]=> string(0) "" ["gys_ck"]=> string(0) "" ["gl_dm"]=> string(0) "" ["gys_hq"]=> string(0) "" ["sj_price"]=> string(0) "" ["price_two"]=> string(0) "" ["bjtime_two"]=> string(1) "0" ["price_three"]=> string(0) "" ["bjtime_three"]=> string(1) "0" ["member_id_three"]=> NULL ["price_tm"]=> string(0) "" ["price_jj"]=> string(0) "" ["bjtime_jj"]=> string(1) "0" ["jj_mid"]=> NULL ["is_tj_xh"]=> string(1) "0" ["is_hot"]=> string(1) "0" ["is_top"]=> string(1) "0" ["gl_zz"]=> string(1) "2" ["cat_id"]=> string(1) "0" ["purchase_price"]=> string(0) "" ["selling_price"]=> string(0) "" ["gm_gys_id"]=> string(0) "" ["repalce_id"]=> NULL ["price_jd_id"]=> NULL ["images"]=> NULL ["num_1"]=> string(0) "" ["jprice_1"]=> string(0) "" ["sprice_1"]=> string(0) "" ["num_2"]=> string(0) "" ["jprice_2"]=> string(0) "" ["sprice_2"]=> string(0) "" ["num_3"]=> string(0) "" ["jprice_3"]=> string(0) "" ["sprice_3"]=> string(0) "" ["num_4"]=> string(0) "" ["jprice_4"]=> string(0) "" ["sprice_4"]=> string(0) "" ["num_5"]=> string(0) "" ["jprice_5"]=> string(0) "" ["sprice_5"]=> string(0) "" ["num_6"]=> string(0) "" ["jprice_6"]=> string(0) "" ["sprice_6"]=> string(0) "" ["num_7"]=> string(0) "" ["jprice_7"]=> string(0) "" ["sprice_7"]=> string(0) "" ["rate_1"]=> string(0) "" ["rate_2"]=> string(0) "" ["rate_3"]=> string(0) "" ["rate_4"]=> string(0) "" ["rate_5"]=> string(0) "" ["rate_6"]=> string(0) "" ["rate_7"]=> string(0) "" ["hot_or_top"]=> string(1) "1" ["lxr_id"]=> string(1) "0" ["toptime"]=> string(10) "1710851571" ["addnum"]=> string(0) "" ["ch_bm"]=> string(33) "晶体管 - FET，MOSFET - 阵列" ["lh"]=> string(0) "" ["ly"]=> string(1) "1" ["Gsxx_sx"]=> string(15) "制造商原厂" ["Gsxx_qymc"]=> string(36) "深圳市微碧半导体有限公司" ["Gsxx_zizhi"]=> string(24) "增值税一般纳税人" ["Gsxx_nssbh"]=> string(18) "91440300056161233X" ["Gsxx_yhzh"]=> string(0) "" ["Gsxx_yhdz"]=> string(0) "" ["Gsxx_tel"]=> string(0) "" ["Gsxx_email"]=> string(0) "" ["Gsxx_gsdz"]=> string(0) "" ["Gsxx_jyfw"]=> string(0) "" ["Gsxx_guoji"]=> string(6) "中国" ["Gsxx_city"]=> string(0) "" ["Gsxx_web"]=> string(21) "http://www.vbsemi.tw/" ["Gsxx_qyjs"]=> string(516) "VBsemi成立于2012年，是国内MOSFET最具竞争力之功率半导体组件制造厂。本公司已取得多项产品发明专利，并经ISO14001、QS9000、ISO9001认证。 VBsemi是台湾一家自行研发、生产、销售MOSFET自有品牌的公司。从组件设计、晶圆加工、封装、特性分析、测试全程作业以及客户服务，营销全球。本公司产品已被广泛应用于UPS、Power Inverter、CCFL、DC Fan、SMPS、Adapter、Lighting、Battery、DC-DC、LCD Monitor等领域。 " ["Gsxx_zshyfl"]=> string(0) "" ["Gsxx_fae"]=> NULL ["Gsxx_faekey"]=> NULL ["shr_city"]=> string(0) "" ["shr_province"]=> string(0) "" ["province_city_area"]=> NULL } }

SIA929DJ-T1-GE3数据手册

× 关闭
缓冲
array(1) { [0]=> array(113) { ["id"]=> string(4) "5361" ["gys_id"]=> string(3) "370" ["mlfl_pt"]=> string(33) "晶体管 - FET，MOSFET - 阵列" ["mlfl_yc"]=> string(20) "场效应管(MOSFET)" ["mlfl_kc"]=> NULL ["MFGR_qc"]=> string(0) "" ["zzs"]=> string(23) "VBsemi(微碧半导体)" ["zzsbh"]=> string(18) "SiA929DJ-T1-GE3-VB" ["gysqjfz"]=> string(9) "DFN6(2X2)" ["stock"]=> string(5) "10000" ["stock_dg"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq_zx"]=> string(4) "3000" ["cny"]=> string(0) "" ["price"]=> string(4) "1.18" ["gys_zq"]=> string(6) "1-3天" ["show_price"]=> string(0) "" ["ph"]=> string(3) "23+" ["repalce_bz"]=> string(15) "SiA929DJ-T1-GE3" ["ms"]=> string(87) "2个P沟道,-30V,-4.1A,RDS(ON),38mΩ@10V,42mΩ@4.5V,12Vgs(±V)；-0.7Vth(V)；DFN6(2X2)" ["bjtime"]=> string(1) "0" ["pdf_add"]=> string(0) "" ["addtime"]=> string(10) "1710917456" ["bz"]=> string(0) "" ["xp_num"]=> string(0) "" ["mpn_bm"]=> string(18) "golon_gys_file_new" ["fz_wk"]=> string(3) " - " ["hzcs"]=> string(0) "" ["date"]=> string(0) "" ["member_id"]=> string(1) "0" ["is_ysjg"]=> string(0) "" ["is_jj"]=> string(1) "0" ["is_tax"]=> string(1) "1" ["gys_kclx"]=> string(0) "" ["gys_ck"]=> string(0) "" ["gl_dm"]=> string(0) "" ["gys_hq"]=> string(0) "" ["sj_price"]=> string(0) "" ["price_two"]=> string(0) "" ["bjtime_two"]=> string(1) "0" ["price_three"]=> string(0) "" ["bjtime_three"]=> string(1) "0" ["member_id_three"]=> NULL ["price_tm"]=> string(0) "" ["price_jj"]=> string(0) "" ["bjtime_jj"]=> string(1) "0" ["jj_mid"]=> NULL ["is_tj_xh"]=> string(1) "0" ["is_hot"]=> string(1) "0" ["is_top"]=> string(1) "0" ["gl_zz"]=> string(1) "2" ["cat_id"]=> string(1) "0" ["purchase_price"]=> string(0) "" ["selling_price"]=> string(0) "" ["gm_gys_id"]=> string(0) "" ["repalce_id"]=> NULL ["price_jd_id"]=> NULL ["images"]=> NULL ["num_1"]=> string(0) "" ["jprice_1"]=> string(0) "" ["sprice_1"]=> string(0) "" ["num_2"]=> string(0) "" ["jprice_2"]=> string(0) "" ["sprice_2"]=> string(0) "" ["num_3"]=> string(0) "" ["jprice_3"]=> string(0) "" ["sprice_3"]=> string(0) "" ["num_4"]=> string(0) "" ["jprice_4"]=> string(0) "" ["sprice_4"]=> string(0) "" ["num_5"]=> string(0) "" ["jprice_5"]=> string(0) "" ["sprice_5"]=> string(0) "" ["num_6"]=> string(0) "" ["jprice_6"]=> string(0) "" ["sprice_6"]=> string(0) "" ["num_7"]=> string(0) "" ["jprice_7"]=> string(0) "" ["sprice_7"]=> string(0) "" ["rate_1"]=> string(0) "" ["rate_2"]=> string(0) "" ["rate_3"]=> string(0) "" ["rate_4"]=> string(0) "" ["rate_5"]=> string(0) "" ["rate_6"]=> string(0) "" ["rate_7"]=> string(0) "" ["hot_or_top"]=> string(1) "1" ["lxr_id"]=> string(1) "0" ["toptime"]=> string(10) "1710851571" ["addnum"]=> string(0) "" ["ch_bm"]=> string(33) "晶体管 - FET，MOSFET - 阵列" ["lh"]=> string(0) "" ["ly"]=> string(1) "1" ["Gsxx_sx"]=> string(15) "制造商原厂" ["Gsxx_qymc"]=> string(36) "深圳市微碧半导体有限公司" ["Gsxx_zizhi"]=> string(24) "增值税一般纳税人" ["Gsxx_nssbh"]=> string(18) "91440300056161233X" ["Gsxx_yhzh"]=> string(0) "" ["Gsxx_yhdz"]=> string(0) "" ["Gsxx_tel"]=> string(0) "" ["Gsxx_email"]=> string(0) "" ["Gsxx_gsdz"]=> string(0) "" ["Gsxx_jyfw"]=> string(0) "" ["Gsxx_guoji"]=> string(6) "中国" ["Gsxx_city"]=> string(0) "" ["Gsxx_web"]=> string(21) "http://www.vbsemi.tw/" ["Gsxx_qyjs"]=> string(516) "VBsemi成立于2012年，是国内MOSFET最具竞争力之功率半导体组件制造厂。本公司已取得多项产品发明专利，并经ISO14001、QS9000、ISO9001认证。 VBsemi是台湾一家自行研发、生产、销售MOSFET自有品牌的公司。从组件设计、晶圆加工、封装、特性分析、测试全程作业以及客户服务，营销全球。本公司产品已被广泛应用于UPS、Power Inverter、CCFL、DC Fan、SMPS、Adapter、Lighting、Battery、DC-DC、LCD Monitor等领域。 " ["Gsxx_zshyfl"]=> string(0) "" ["Gsxx_fae"]=> NULL ["Gsxx_faekey"]=> NULL ["shr_city"]=> string(0) "" ["shr_province"]=> string(0) "" ["province_city_area"]=> NULL } }
封装图 商品描述 综合参数 封装规格/资料 价格(含税) 购买数量/库存 操作
状态： 在售
型号： SiA929DJ-T1-GE3-VB复制
品牌： VBsemi(微碧半导体)复制
描述： 2个P沟道,-30V,-4.1A,RDS(ON),38mΩ@10V,42mΩ@4.5V,12Vgs(±V)；-0.7Vth(V)；DFN6(2X2)
封装：DFN6(2X2)
fet 类型：
fet 功能：
漏源极电压（vdss）：
电流 - 连续漏极（id）：
功率 - 最大值：
select action_name,tags from golon_ics_category where mpn_bm='golon_jtg_fet_mosfet_zl'
丝印：
料号：JTG10-6542
包装： 3000个/
原厂入驻
10+:￥1.4160
750+:￥1.3570
1500+:￥1.2626
3000+:￥1.2567
现货:10K+
最小起订:
个
总额：
SELECT `gys_zq` FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SiA929DJ-T1-GE3-VB' ) AND ( a.sprice_1 > 0 ) AND ( (`Gsxx_sx` = '国内商城平台') OR (`Gsxx_sx` = '其他经销商') OR (`Gsxx_sx` = '授权代理商') ) LIMIT 1
24小时发货
array(4) { ["c"]=> string(1) "1" ["stock"]=> string(5) "10000" ["gys_id"]=> string(3) "370" ["gys_zq"]=> string(6) "1-3天" }
状态： 在售
型号： SIA929DJ-T1-GE3复制
品牌： Vishay复制 Vishay 威世
描述： MOSFET 2P-CH 30V 4.5A SC70-6
封装：POWERPAK® SC-70-6 双 外壳：POWERPAK® SC-70-6 双
fet 类型：2 个 P 沟道（双）
fet 功能：逻辑电平门
漏源极电压（vdss）：30V
电流 - 连续漏极（id）：4.5A（Tc）
功率 - 最大值：7.8W
select action_name,tags from golon_ics_category where mpn_bm='golon_jtg_fet_mosfet_zl'
丝印：(请登录)
料号：JTG10-1413
包装：
10+:￥1.4160
750+:￥1.3570
1500+:￥1.2626
3000+:￥1.2567
现货:有货
最小起订:
个
总额：
SELECT `gys_zq` FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIA929DJ-T1-GE3' ) AND ( a.sprice_1 > 0 ) AND ( (`Gsxx_sx` = '国内商城平台') OR (`Gsxx_sx` = '其他经销商') OR (`Gsxx_sx` = '授权代理商') ) LIMIT 1
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