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array(65) { ["id"]=> string(3) "360" ["pdf_add"]=> string(75) "http://www.genesicsemi.com/images/products_sic/thyristor/GA01PNS150-220.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(69) "//media.digikey.com/Photos/GeneSiC%20Semiconductor/GA01PNS150-220.jpg" ["images"]=> string(89) "https://www.chenkeiot.com/Public/imagesmk/Photos/GeneSiC_Semiconductor/GA01PNS150-220.jpg" ["ljbh"]=> string(12) "1242-1258-ND" ["zzsbh"]=> string(14) "GA01PNS150-220" ["zddgs"]=> string(1) "1" ["xysl"]=> string(2) "13" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(19) "RF DIODE PIN 15000V" ["xl"]=> string(1) "-" ["zzs"]=> string(23) "Navitas(GeneSiC)/纳微" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "GeneSiC Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ejglx"]=> string(9) "PIN - 单" ["dy_fz"]=> string(6) "15000V" ["dl_zdz"]=> string(2) "1A" ["bt_vr_f"]=> string(18) "7pF @ 1000V，1MHz" ["bt_if_f"]=> string(1) "-" ["glhs"]=> string(1) "-" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["fz_wk"]=> string(6) "轴向" ["gysqjfz"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "114" ["wl_num"]=> string(4) "1025" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(12) "golon_ejg_sp" ["ch_bm"]=> string(15) "高频二极管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ejg_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1025" ["parent_id"]=> string(3) "112" ["lb"]=> string(26) "二极管 高频二极管" ["action_name"]=> string(2) "e2" ["rate"]=> string(5) "1.185" ["rate_hot"]=> string(2) "48" ["moq_rate"]=> string(6) "1.6650" } }
型号： GA01PNS150-220复制
状态： 在售 修改
品牌： Navitas(GeneSiC)/纳微复制
封装：-
外壳：轴向
描述： RF DIODE PIN 15000V
SELECT * FROM `golon_ejg_sp` WHERE ( `id` = 360 ) LIMIT 1
二极管类型：PIN - 单
反向耐压电压最大值(V)：15000V
最大值电流(A)：1A
不同?vr,f时的电容：7pF @ 1000V，1MHz
功率耗散(最大值)：-
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：1025360
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'GA01PNS150-220' ) LIMIT 1
array(65) { ["id"]=> string(3) "821" ["pdf_add"]=> string(74) "http://www.genesicsemi.com/images/products_sic/thyristor/GA01PNS80-220.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(68) "//media.digikey.com/Photos/GeneSiC%20Semiconductor/GA01PNS80-220.jpg" ["images"]=> string(88) "https://www.chenkeiot.com/Public/imagesmk/Photos/GeneSiC_Semiconductor/GA01PNS80-220.jpg" ["ljbh"]=> string(12) "1242-1259-ND" ["zzsbh"]=> string(13) "GA01PNS80-220" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(18) "RF DIODE PIN 8000V" ["xl"]=> string(1) "-" ["zzs"]=> string(23) "Navitas(GeneSiC)/纳微" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "GeneSiC Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ejglx"]=> string(9) "PIN - 单" ["dy_fz"]=> string(5) "8000V" ["dl_zdz"]=> string(2) "2A" ["bt_vr_f"]=> string(18) "4pF @ 1000V，1MHz" ["bt_if_f"]=> string(1) "-" ["glhs"]=> string(1) "-" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["fz_wk"]=> string(6) "轴向" ["gysqjfz"]=> string(1) "-" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "114" ["wl_num"]=> string(4) "1025" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(12) "golon_ejg_sp" ["ch_bm"]=> string(15) "高频二极管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ejg_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1025" ["parent_id"]=> string(3) "112" ["lb"]=> string(26) "二极管 高频二极管" ["action_name"]=> string(2) "e2" ["rate"]=> string(5) "1.185" ["rate_hot"]=> string(2) "48" ["moq_rate"]=> string(6) "1.6650" } }
型号： GA01PNS80-220复制
状态： 在售 修改
品牌： Navitas(GeneSiC)/纳微复制
封装：-
外壳：轴向
描述： RF DIODE PIN 8000V
SELECT * FROM `golon_ejg_sp` WHERE ( `id` = 821 ) LIMIT 1
二极管类型：PIN - 单
反向耐压电压最大值(V)：8000V
最大值电流(A)：2A
不同?vr,f时的电容：4pF @ 1000V，1MHz
功率耗散(最大值)：-
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：1025821
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'GA01PNS80-220' ) LIMIT 1
array(65) { ["id"]=> string(4) "1369" ["pdf_add"]=> string(53) "http://www.genesicsemi.com/sic_pin/GA01PNS150-201.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(69) "//media.digikey.com/Photos/GeneSiC%20Semiconductor/GA01PNS150-201.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "GA01PNS150-201" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1739638854" ["ms"]=> string(26) "SIC DIODE 15000V 1A DO-201" ["xl"]=> string(1) "-" ["zzs"]=> string(23) "Navitas(GeneSiC)/纳微" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "GeneSiC Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ejglx"]=> string(9) "PIN - 单" ["dy_fz"]=> string(6) "15000V" ["dl_zdz"]=> string(2) "1A" ["bt_vr_f"]=> string(16) "22pF @ 1V，1MHz" ["bt_if_f"]=> string(1) "-" ["glhs"]=> string(1) "-" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["fz_wk"]=> string(17) "DO-201AD，轴向" ["gysqjfz"]=> string(6) "DO-201" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "2" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "114" ["wl_num"]=> string(4) "1025" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(12) "golon_ejg_sp" ["ch_bm"]=> string(15) "高频二极管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597735082" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ejg_sp' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1025" ["parent_id"]=> string(3) "112" ["lb"]=> string(26) "二极管 高频二极管" ["action_name"]=> string(2) "e2" ["rate"]=> string(5) "1.185" ["rate_hot"]=> string(2) "48" ["moq_rate"]=> string(6) "1.6650" } }
型号： GA01PNS150-201复制
状态： 在售 修改
品牌： Navitas(GeneSiC)/纳微复制
封装：DO-201
外壳：DO-201AD，轴向
描述： SIC DIODE 15000V 1A DO-201
SELECT * FROM `golon_ejg_sp` WHERE ( `id` = 1369 ) LIMIT 1
二极管类型：PIN - 单
反向耐压电压最大值(V)：15000V
最大值电流(A)：1A
不同?vr,f时的电容：22pF @ 1V，1MHz
功率耗散(最大值)：-
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10251369
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'GA01PNS150-201' ) LIMIT 1

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