array(71) {
["id"]=>
string(3) "887"
["pdf_add"]=>
string(103) "https://media.digikey.com/pdf/Data%20Sheets/Vishay%20Siliconix%20PDFs/J;SST174,175,176,177%20Series.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "https://www.golon.net/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "SST176-T1-E3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.600000"
["gys_id"]=>
string(4) "1773"
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992306"
["ms"]=>
string(0) ""
["xl"]=>
string(9) "undefined"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(0) ""
["dy_jc"]=>
string(0) ""
["lyjdy"]=>
string(0) ""
["bt_vds"]=>
string(0) ""
["ljdl"]=>
string(0) ""
["bt_id"]=>
string(0) ""
["bt_vds_srdr"]=>
string(0) ""
["dz_rds"]=>
string(0) ""
["gx_zdz"]=>
string(0) ""
["gzwd"]=>
string(0) ""
["azlx"]=>
string(0) ""
["fz_wk"]=>
string(27) "TO-236-3，SC-59，SOT-23-3"
["gysqjfz"]=>
string(6) "SOT-23"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(5) "S6***"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "1"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
NULL
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "804"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "134"
["wl_num"]=>
string(4) "1044"
["admin_id"]=>
string(1) "1"
["mpn_bm"]=>
string(14) "golon_jtg_jfet"
["ch_bm"]=>
string(16) "晶体管 - JFET"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.rate,a.rate_hot,sum(a.rate+a.rate_hot/100) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_jfet'
封装：SOT-23
外壳：TO-236-3，SC-59，SOT-23-3
描述：
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Fet类型：
电压-击穿（v（br）gss）：
漏源极电压（vdss）：
不同vds时电流-漏极(idss)：
电阻-rds（开）：
最大功率 值：
工作温度：
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string(57) "'fetlx','dy_jc','lyjdy','bt_vds','dz_rds','gx_zdz','gzwd'"
SELECT COLUMN_NAME as bt,COLUMN_COMMENT as title FROM INFORMATION_SCHEMA.Columns WHERE ORDINAL_POSITION >=(SELECT ORDINAL_POSITION FROM INFORMATION_SCHEMA.Columns WHERE table_name='golon_jtg_jfet' AND table_schema='golon' and COLUMN_NAME='ms')+1 and ORDINAL_POSITION <=(SELECT ORDINAL_POSITION FROM INFORMATION_SCHEMA.Columns WHERE table_name='golon_jtg_jfet' AND table_schema='golon' and COLUMN_NAME='is_new_time') and table_name='golon_jtg_jfet' AND table_schema='golon' and COLUMN_NAME not in('tdxl','gysqjfz','lm','fz_wk','zzs','tag','wk_cc','zzs_old','zzs_new','ljzt','spq','sqp','is_rohs','bz','gys_id','gm_gys_id','xysl','cfkc','dj','price_addtime','zddgs','spq','moq''gl_zz','gl_dm','gl_dmtp','symbol','gl_vdd','gl_gnd','gl_jz','gl_bdm','gl_bdmsm','gl_kbc','gl_dmgx','pcbfzk_id','pcbfzk','jyid','cat_id','wl_num','admin_id','mpn_bm','ch_bm','lock_dm','is_use_cat_id','is_new_time','gl_zz','gl_pin') and COLUMN_NAME not in ('fetlx','dy_jc','lyjdy','bt_vds','dz_rds','gx_zdz','gzwd') limit 8
系列：undefined
漏极电流（id） - 最大值：
不同 id 时的电压 - 截止（vgs 关）：
不同 vds 时的输入电容（ciss）：
安装类型：
元器件等级：-
最小起订MOQ：10
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