array(70) {
["id"]=>
string(2) "19"
["pdf_add"]=>
string(46) "https://cdn.macom.com/datasheets/CGH40006S.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Photos/Cree%20Photos/MFG_CGH40006S.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6657/1465%7E440203%7E%7E6.jpg"
["images_dir"]=>
string(27) "./images/1040/CGH40006S.jpg"
["ljbh"]=>
string(14) "CGH40006STR-ND"
["zzsbh"]=>
string(9) "CGH40006S"
["zddgs"]=>
string(3) "200"
["xysl"]=>
string(3) "600"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(10) "296.401200"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(23) "RF MOSFET HEMT 28V 6QFN"
["xl"]=>
string(3) "GaN"
["zzs"]=>
string(14) "Cree/Wolfspeed"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(14) "Cree/Wolfspeed"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["jtglx"]=>
string(4) "HEMT"
["pl"]=>
string(10) "0Hz ~ 6GHz"
["zy"]=>
string(4) "12dB"
["dy_cs"]=>
string(3) "28V"
["eddl"]=>
string(1) "-"
["zsxs"]=>
string(1) "-"
["dl_cs"]=>
string(5) "100mA"
["gl_sc"]=>
string(2) "8W"
["dy_ed"]=>
string(3) "84V"
["fz_wk"]=>
string(19) "6-VDFN 裸露焊盘"
["gysqjfz"]=>
string(17) "6-QFN-EP（3X3）"
["gzwd"]=>
string(1) "-"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "200"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "6"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "130"
["wl_num"]=>
string(4) "1040"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_sp"
["ch_bm"]=>
string(17) "高频-FET,MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_sp' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1040"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(28) "晶体管 高频-FET,MOS管"
["action_name"]=>
string(4) "jtg9"
["rate"]=>
string(5) "1.155"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5050"
}
}
封装：6-QFN-EP（3X3）
外壳：6-VDFN 裸露焊盘
描述：
RF MOSFET HEMT 28V 6QFN
|
SELECT * FROM `golon_jtg_fet_mosfet_sp` WHERE ( `id` = 19 ) LIMIT 1
晶体管类型：HEMT
频率(Hz)：0Hz ~ 6GHz
增益(dB)：12dB
测试电压(V)：28V
额定电流(A)：-
输出功率(W)：8W
额定电压(V)：84V
|
|
10+:
￥446.08
200+:
￥342.34
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
200个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'CGH40006S' ) LIMIT 1
|
