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array(76) { ["id"]=> string(5) "17889" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16400J.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(23) "IS42S16400J-7B2LI-TR-ND" ["zzsbh"]=> string(20) "IS42S16400J-7B2LI-TR" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 64M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "64Mb （4M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16400J-7B2LI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 64M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 17889 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：64Mb （4M x 16）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106317889
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16400J-7B2LI-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "17928" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16400J.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(20) "IS42S16400J-7B2LI-ND" ["zzsbh"]=> string(17) "IS42S16400J-7B2LI" ["zddgs"]=> string(3) "286" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 64M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "64Mb （4M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.4ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "64Mb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16400J-7B2LI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 64M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 17928 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：64Mb （4M x 16）
存储器接口：5.4ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106317928
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16400J-7B2LI' ) LIMIT 1
array(76) { ["id"]=> string(5) "18298" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(21) "IS42S16100H-7BL-TR-ND" ["zzsbh"]=> string(18) "IS42S16100H-7BL-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-7BL-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18298 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318298
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-7BL-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "18402" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(18) "IS42S16100H-6BL-ND" ["zzsbh"]=> string(15) "IS42S16100H-6BL" ["zddgs"]=> string(3) "702" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-6BL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18402 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318402
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-6BL' ) LIMIT 1
array(76) { ["id"]=> string(5) "18547" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(22) "IS42S16100H-7BLI-TR-ND" ["zzsbh"]=> string(19) "IS42S16100H-7BLI-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-7BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18547 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318547
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-7BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "18561" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(22) "IS42S16100H-6BLI-TR-ND" ["zzsbh"]=> string(19) "IS42S16100H-6BLI-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-6BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18561 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318561
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-6BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "18578" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(11) "706-1445-ND" ["zzsbh"]=> string(16) "IS42S16100H-7BLI" ["zddgs"]=> string(3) "702" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-7BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18578 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318578
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-7BLI' ) LIMIT 1
array(76) { ["id"]=> string(5) "18590" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(19) "IS42S16100H-6BLI-ND" ["zzsbh"]=> string(16) "IS42S16100H-6BLI" ["zddgs"]=> string(3) "702" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-6BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18590 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318590
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-6BLI' ) LIMIT 1
array(76) { ["id"]=> string(5) "18727" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(21) "IS42S16100H-6BL-TR-ND" ["zzsbh"]=> string(18) "IS42S16100H-6BL-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-6BL-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18727 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318727
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-6BL-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "18728" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100H.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(11) "706-1444-ND" ["zzsbh"]=> string(15) "IS42S16100H-7BL" ["zddgs"]=> string(3) "819" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100H-7BL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 18728 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106318728
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100H-7BL' ) LIMIT 1
array(76) { ["id"]=> string(5) "23340" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(20) "IS45S16100E-7BLA1-ND" ["zzsbh"]=> string(17) "IS45S16100E-7BLA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS45S16100E-7BLA1复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23340 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323340
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS45S16100E-7BLA1' ) LIMIT 1
array(76) { ["id"]=> string(5) "23341" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(23) "IS45S16100E-7BLA1-TR-ND" ["zzsbh"]=> string(20) "IS45S16100E-7BLA1-TR" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "143MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS45S16100E-7BLA1-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23341 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323341
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS45S16100E-7BLA1-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "23665" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(18) "IS42S16100E-6BL-ND" ["zzsbh"]=> string(15) "IS42S16100E-6BL" ["zddgs"]=> string(3) "702" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100E-6BL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23665 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323665
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100E-6BL' ) LIMIT 1
array(76) { ["id"]=> string(5) "23666" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(19) "IS42S16100E-6BLI-ND" ["zzsbh"]=> string(16) "IS42S16100E-6BLI" ["zddgs"]=> string(3) "702" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100E-6BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23666 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323666
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100E-6BLI' ) LIMIT 1
array(76) { ["id"]=> string(5) "23667" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(22) "IS42S16100E-6BLI-TR-ND" ["zzsbh"]=> string(19) "IS42S16100E-6BLI-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100E-6BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23667 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323667
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100E-6BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "23668" ["pdf_add"]=> string(43) "http://www.issi.com/WW/pdf/42-45S16100E.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(21) "IS42S16100E-6BL-TR-ND" ["zzsbh"]=> string(18) "IS42S16100E-6BL-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100E-6BL-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23668 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323668
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100E-6BL-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "23671" ["pdf_add"]=> string(46) "http://www.issi.com/WW/pdf/42-45S-VS16100F.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(18) "IS42S16100F-6BL-ND" ["zzsbh"]=> string(15) "IS42S16100F-6BL" ["zddgs"]=> string(3) "702" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100F-6BL复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23671 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323671
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100F-6BL' ) LIMIT 1
array(76) { ["id"]=> string(5) "23672" ["pdf_add"]=> string(46) "http://www.issi.com/WW/pdf/42-45S-VS16100F.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(19) "IS42S16100F-6BLI-ND" ["zzsbh"]=> string(16) "IS42S16100F-6BLI" ["zddgs"]=> string(3) "702" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100F-6BLI复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23672 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323672
量大可议价
起订量:10 修改
包装量: 托盘 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100F-6BLI' ) LIMIT 1
array(76) { ["id"]=> string(5) "23673" ["pdf_add"]=> string(46) "http://www.issi.com/WW/pdf/42-45S-VS16100F.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(22) "IS42S16100F-6BLI-TR-ND" ["zzsbh"]=> string(19) "IS42S16100F-6BLI-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(22) "-40°C ~ 85°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100F-6BLI-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23673 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：-40°C ~ 85°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323673
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100F-6BLI-TR' ) LIMIT 1
array(76) { ["id"]=> string(5) "23674" ["pdf_add"]=> string(46) "http://www.issi.com/WW/pdf/42-45S-VS16100F.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(82) "//media.digikey.com/Renders/ISSI%20(Integrated%20Silicon)%20Renders/60-BGA_tmb.jpg" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Renders/ISSI_(Integrated_Silicon)_Renders/60-BGA.jpg" ["ljbh"]=> string(21) "IS42S16100F-6BL-TR-ND" ["zzsbh"]=> string(18) "IS42S16100F-6BL-TR" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "IC DRAM 16M PARALLEL 60TFBGA" ["xl"]=> string(1) "-" ["zzs"]=> string(11) "ISSI/芯成" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(37) "ISSI, Integrated Silicon Solution Inc" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ccqlx"]=> string(6) "易失" ["ccqgs"]=> string(4) "DRAM" ["js"]=> string(5) "SDRAM" ["ccrl"]=> string(18) "16Mb （1M x 16）" ["ccqzz"]=> string(0) "" ["ccqjk"]=> string(5) "5.5ns" ["szpl"]=> string(6) "并联" ["xzqsj"]=> string(6) "166MHz" ["fwsj"]=> string(1) "-" ["dydy"]=> string(9) "3V ~ 3.6V" ["gzwd"]=> string(20) "0°C ~ 70°C（TA）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(8) "60-TFBGA" ["gysqjfz"]=> string(22) "60-TFBGA（6.4x10.1）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(12) "标准卷带" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_slzhuangt"]=> string(12) "无需烧录" ["gl_cxdaxiao"]=> string(4) "16Kb" ["gl_slfengzhuang"]=> string(0) "" ["gl_slfcb"]=> string(0) "" ["gl_slfhxp"]=> string(0) "" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(2) "60" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(1) "5" ["wl_num"]=> string(4) "1063" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(9) "golon_ccq" ["ch_bm"]=> string(9) "存储器" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["is_yx"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ccq' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1063" ["parent_id"]=> string(1) "4" ["lb"]=> string(33) "存储器(EPROM FALSH) 存储器" ["action_name"]=> string(2) "c1" ["rate"]=> string(5) "1.086" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4360" } }
型号： IS42S16100F-6BL-TR复制
状态： 在售 修改
品牌： ISSI/芯成复制
封装：60-TFBGA（6.4x10.1）
外壳：60-TFBGA
描述： IC DRAM 16M PARALLEL 60TFBGA
SELECT * FROM `golon_ccq` WHERE ( `id` = 23674 ) LIMIT 1
存储器类型：易失
存储器格式：DRAM
存储容量：16Mb （1M x 16）
存储器接口：5.5ns
电压-电源：3V ~ 3.6V
工作温度：0°C ~ 70°C（TA）
类别： 存储器
丝印：(请登录)
料号：106323674
量大可议价
起订量:10 修改
包装量: 标准卷带 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IS42S16100F-6BL-TR' ) LIMIT 1

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