array(74) {
["id"]=>
string(4) "6094"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=56279&prodName=TPW1R005PL"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/Toshiba%20Renders/264;%202-5S1A;%20;%208.jpg"
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6349/264%7E2-5S1A%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/TPW1R005PL,L1Q.jpg"
["ljbh"]=>
string(18) "TPW1R005PLL1QTR-ND"
["zzsbh"]=>
string(14) "TPW1R005PL,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "11.142900"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(32) "X35 PB-F POWER MOSFET TRANSISTOR"
["xl"]=>
string(9) "U-MOSIX-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "45V"
["dl_lxlj"]=>
string(12) "300A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(10) "4.5V，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.4V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "122nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(14) "9600pF @ 22.5V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "960mW（Ta），170W（Tc）"
["gzwd"]=>
string(6) "175°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
X35 PB-F POWER MOSFET TRANSISTOR
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6094 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：45V
电流-连续漏极(id)：300A（Tc）
Vgs(最大值)：±20V
功率-最大值：960mW（Ta），170W（Tc）
工作温度：175°C
|
|
10+:
￥16.66
5000+:
￥12.76
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPW1R005PL,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6101"
["pdf_add"]=>
string(71) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPW1R306PL_Web.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/Toshiba%20Renders/264;%202-5S1A;%20;%208.jpg"
["images"]=>
string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Toshiba_Renders/264;_2-5S1A;_;_8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "TPW1R306PLL1QTR-ND"
["zzsbh"]=>
string(14) "TPW1R306PL,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(32) "X35 PB-F POWER MOSFET TRANSISTOR"
["xl"]=>
string(9) "U-MOSIX-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(12) "260A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "1.29 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "91nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "8100pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "960mW（Ta），170W（Tc）"
["gzwd"]=>
string(6) "175°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
X35 PB-F POWER MOSFET TRANSISTOR
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6101 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：260A（Tc）
Vgs(最大值)：±20V
功率-最大值：960mW（Ta），170W（Tc）
工作温度：175°C
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPW1R306PL,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "22090"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=15482&prodName=TPWR8503NL"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/Toshiba%20Renders/264;%202-5S1A;%20;%208.jpg"
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6349/264%7E2-5S1A%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/TPW1R005PL,L1Q.jpg"
["ljbh"]=>
string(18) "TPWR8503NLL1QTR-ND"
["zzsbh"]=>
string(14) "TPWR8503NL,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.209950"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(26) "MOSFET N-CH 30V 150A 8DSOP"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "150A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "0.85 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.3V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "74nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "6900pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "800mW（Ta），142W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 150A 8DSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22090 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：150A（Tc）
Vgs(最大值)：±20V
功率-最大值：800mW（Ta），142W（Tc）
工作温度：150°C（TJ）
|
|
10+:
￥13.77
5000+:
￥10.55
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPWR8503NL,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "22660"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=15504&prodName=TPW4R50ANH"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/Toshiba%20Renders/264;%202-5S1A;%20;%208.jpg"
["images"]=>
string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Toshiba_Renders/264;_2-5S1A;_;_8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "TPW4R50ANHL1QTR-ND"
["zzsbh"]=>
string(14) "TPW4R50ANH,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(26) "MOSFET N-CH 100V 92A 8DSOP"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(11) "92A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "4.5 毫欧 @ 46A，10V"
["bt_id_vgs_zdz"]=>
string(8) "4V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "58nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5200pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "800mW（Ta），142W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
MOSFET N-CH 100V 92A 8DSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22660 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：92A（Tc）
Vgs(最大值)：±20V
功率-最大值：800mW（Ta），142W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPW4R50ANH,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "24464"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=15501&prodName=TPW4R008NH"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/Toshiba%20Renders/264;%202-5S1A;%20;%208.jpg"
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6349/264%7E2-5S1A%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/TPW1R005PL,L1Q.jpg"
["ljbh"]=>
string(18) "TPW4R008NHL1QTR-ND"
["zzsbh"]=>
string(14) "TPW4R008NH,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.323650"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(26) "MOSFET N-CH 80V 116A 8DSOP"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(12) "116A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(20) "4 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(8) "4V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "59nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5300pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "800mW（Ta），142W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
MOSFET N-CH 80V 116A 8DSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24464 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：116A（Tc）
Vgs(最大值)：±20V
功率-最大值：800mW（Ta），142W（Tc）
工作温度：150°C（TJ）
|
|
10+:
￥13.94
5000+:
￥10.68
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPW4R008NH,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "29361"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=15466&prodName=TPWR8004PL"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/Toshiba%20Renders/264;%202-5S1A;%20;%208.jpg"
["images"]=>
string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Toshiba_Renders/264;_2-5S1A;_;_8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "TPWR8004PLL1QTR-ND"
["zzsbh"]=>
string(14) "TPWR8004PL,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(26) "MOSFET N-CH 40V 150A 8DSOP"
["xl"]=>
string(9) "U-MOSIX-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "150A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "0.8 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.4V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "103nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "9600pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(25) "1W（Ta），170W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
MOSFET N-CH 40V 150A 8DSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 29361 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：150A（Tc）
Vgs(最大值)：±20V
功率-最大值：1W（Ta），170W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPWR8004PL,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45557"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=68787&prodName=XPW6R30ANB"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(86) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/970/MFG_TK200F04N1L%2CLXGQ.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "XPW6R30ANB,L1XHQ"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.615450"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(32) "POWER MOSFET TRANSISTOR DSOP ADV"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(11) "45A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(24) "6.3 毫欧 @ 22.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 500µA"
["bt_vgs_sjdh"]=>
string(10) "52nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3240pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "960mW（Ta），132W（Tc）"
["gzwd"]=>
string(6) "175°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591860"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
POWER MOSFET TRANSISTOR DSOP ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45557 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：45A（Ta）
Vgs(最大值)：±20V
功率-最大值：960mW（Ta），132W（Tc）
工作温度：175°C
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'XPW6R30ANB,L1XHQ' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45564"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=62007&prodName=TPW1R104PB"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2962/MFG_TPWR7904PB%2CL1XHQ.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "TPW1R104PB,L1XHQ"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.308070"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(32) "POWER MOSFET TRANSISTOR DSOP-ADV"
["xl"]=>
string(9) "U-MOSIX-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "120A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(23) "1.14 毫欧 @ 60A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 500µA"
["bt_vgs_sjdh"]=>
string(10) "55nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "4560pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "960mW（Ta），132W（Tc）"
["gzwd"]=>
string(6) "175°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591883"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
POWER MOSFET TRANSISTOR DSOP-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45564 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：120A（Ta）
Vgs(最大值)：±20V
功率-最大值：960mW（Ta），132W（Tc）
工作温度：175°C
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPW1R104PB,L1XHQ' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45579"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=36851&prodName=TPWR6003PL"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6349/264%7E2-5S1A%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/TPW1R005PL,L1Q.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(14) "TPWR6003PL,L1Q"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "11.370310"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(32) "PB-F POWER MOSFET TRANSISTOR DSO"
["xl"]=>
string(9) "U-MOSIX-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "150A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "600µOhm @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.1V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "110nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "10000pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "960mW（Ta），170W（Tc）"
["gzwd"]=>
string(6) "175°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerWDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591926"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerWDFN
描述：
PB-F POWER MOSFET TRANSISTOR DSO
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45579 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：150A（Tc）
Vgs(最大值)：±20V
功率-最大值：960mW（Ta），170W（Tc）
工作温度：175°C
|
|
10+:
￥17.00
5000+:
￥13.02
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPWR6003PL,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45581"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=62009&prodName=TPWR7904PB"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(68) "//media.digikey.com/Photos/Toshiba%20Photos/MFG_TK200F04N1L,LXGQ.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "TPWR7904PB,L1XHQ"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(32) "POWER MOSFET TRANSISTOR DSOP-ADV"
["xl"]=>
string(9) "U-MOSIX-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "150A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(23) "0.79 毫欧 @ 75A，10V"
["bt_id_vgs_zdz"]=>
string(8) "3V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "85nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "6650pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "960mW（Ta），170W（Tc）"
["gzwd"]=>
string(6) "175°C"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(14) "8-DSOP Advance"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591950"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-DSOP Advance
外壳：8-PowerVDFN
描述：
POWER MOSFET TRANSISTOR DSOP-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45581 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：150A（Ta）
Vgs(最大值)：±20V
功率-最大值：960mW（Ta），170W（Tc）
工作温度：175°C
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPWR7904PB,L1XHQ' ) LIMIT 1
|
