array(74) {
["id"]=>
string(5) "21256"
["pdf_add"]=>
string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3g100gntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3G100GNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3G100GNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET N-CH 40V 10A TSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "14.3 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "8.4nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "615pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 40V 10A TSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 21256 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3G100GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "24981"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e130mn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "RQ3E130MNTB1TR-ND"
["zzsbh"]=>
string(12) "RQ3E130MNTB1"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "6000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 13A HSMT8"
["xl"]=>
string(1) "*"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.1 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "14nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "840pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 13A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24981 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E130MNTB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "24984"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e100mn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "RQ3E100MNTB1TR-ND"
["zzsbh"]=>
string(12) "RQ3E100MNTB1"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 10A HSMT8"
["xl"]=>
string(1) "*"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "12.3 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "9.9nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "520pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 10A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24984 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E100MNTB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "31374"
["pdf_add"]=>
string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e100bntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3E100BNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E100BNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 10A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "10.4 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "22nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 10A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31374 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E100BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36578"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RQ3E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E150GNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E150GNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.484510"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 15A 8-HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "15A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.1 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "15.3nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "850pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2W（Ta），17.2W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 15A 8-HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36578 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），17.2W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E150GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36581"
["pdf_add"]=>
string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e130bntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3E130BNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E130BNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 13A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "6 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "36nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1900pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 13A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36581 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E130BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36753"
["pdf_add"]=>
string(98) "https://fscdn.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e180bntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Renders/Toshiba%20Renders/8-PowerVDFN%20PKG.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E180BNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E180BNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.224470"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CHANNEL 30V 39A 8HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "39A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.9 毫欧 @ 18A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "37nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3500pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "2W（Ta），20W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CHANNEL 30V 39A 8HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36753 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：39A（Tc）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），20W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E180BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36934"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RQ3E180GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E180GNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E180GNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.245260"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 18A 8-HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "18A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.3 毫欧 @ 18A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "22.4nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1520pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 18A 8-HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36934 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E180GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36978"
["pdf_add"]=>
string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e120attb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3E120ATTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E120ATTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET P-CH 30V 12A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "12A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "8 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "62nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3200pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET P-CH 30V 12A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36978 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E120ATTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37111"
["pdf_add"]=>
string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e120bntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3E120BNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E120BNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 12A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "12A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "9.3 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "29nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1500pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 12A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37111 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E120BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37170"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RQ3E150BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E150BNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E150BNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.888220"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 15A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "15A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.3 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "45nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3000pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 15A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37170 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E150BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37176"
["pdf_add"]=>
string(98) "https://fscdn.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e160adtb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E160ADTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E160ADTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.031520"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 16A 8HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "16A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.5 毫欧 @ 16A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "51nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2550pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 16A 8HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37176 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E160ADTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37182"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e120gn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3E120GNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E120GNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 12A 8-HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "12A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.8 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "10nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "590pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "2W（Ta），16W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "热销"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 12A 8-HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37182 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），16W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E120GNTB' ) LIMIT 1
供应商:
库存:15K+
|
array(74) {
["id"]=>
string(5) "37197"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e080gn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3E080GNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E080GNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 8A 8-HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "8A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "16.7 毫欧 @ 8A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "5.8nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "295pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "2W（Ta），15W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 8A 8-HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37197 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），15W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E080GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37260"
["pdf_add"]=>
string(98) "https://fscdn.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e070bntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E070BNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E070BNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.003730"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET N-CH 30V 7A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "7A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "27 毫欧 @ 7A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "8.9nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "410pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 7A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37260 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：7A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E070BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37388"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RQ3E080BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E080BNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E080BNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.927820"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET N-CH 30V 8A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "8A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "15.2 毫欧 @ 8A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "14.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "660pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 8A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37388 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E080BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37478"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e100gn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RQ3E100GNTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E100GNTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 10A 8-HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "11.7 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "7.9nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "420pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "2W（Ta），15W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 10A 8-HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37478 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta），15W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E100GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "38656"
["pdf_add"]=>
string(98) "https://fscdn.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e180ajtb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(83) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/846%7EHSMT8%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RQ3E150GNTB.jpg"
["ljbh"]=>
string(16) "RQ3E180AJTBTR-ND"
["zzsbh"]=>
string(11) "RQ3E180AJTB"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.452440"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 18A HSMR8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "18A（Ta），30A（Tc）"
["qddy"]=>
string(11) "2.5V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "4.5 毫欧 @ 18A，4.5V"
["bt_id_vgs_zdz"]=>
string(11) "1.5V @ 11mA"
["bt_vgs_sjdh"]=>
string(11) "39nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "4290pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "2W（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 18A HSMR8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 38656 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），30A（Tc）
Vgs(最大值)：±12V
功率-最大值：2W（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E180AJTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "39596"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rq3e150mn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "RQ3E150MNTB1TR-ND"
["zzsbh"]=>
string(12) "RQ3E150MNTB1"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 15A HSMT8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "15A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.7 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "20nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 15A HSMT8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 39596 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3E150MNTB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45488"
["pdf_add"]=>
string(40) "https://www.rohm.com/datasheet/RQ3C150BC"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(59) "//media.digikey.com/Renders/Rohm%20Renders/846;HSMT8;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(11) "RQ3C150BCTB"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET P-CHANNEL 20V 30A 8HSMT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "30A（Tc）"
["qddy"]=>
string(4) "4.5V"
["bt_id_vgs_rds"]=>
string(23) "6.7 毫欧 @ 15A，4.5V"
["bt_id_vgs_zdz"]=>
string(10) "1.2V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "60nC @ 4.5V"
["vgs_zdz"]=>
string(4) "±8V"
["bt_vds_srdr"]=>
string(12) "4800pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "20W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(17) "8-HSMT（3.2x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591639"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSMT（3.2x3）
外壳：8-PowerVDFN
描述：
MOSFET P-CHANNEL 20V 30A 8HSMT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45488 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：30A（Tc）
Vgs(最大值)：±8V
功率-最大值：20W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RQ3C150BCTB' ) LIMIT 1
|
