array(74) {
["id"]=>
string(4) "5534"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1G180MN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(14) "RS1G180MNTB-ND"
["zzsbh"]=>
string(11) "RS1G180MNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.058140"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 40V 18A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(25) "18A（Ta），80A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "7 毫欧 @ 18A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "19.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1293pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 18A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5534 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：18A（Ta），80A（Tc）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1G180MNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "26075"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rs1g120mn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RS1G120MNTBTR-ND"
["zzsbh"]=>
string(11) "RS1G120MNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 40V 12A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "12A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "16.2 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "9.4nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "570pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），25W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 12A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26075 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），25W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1G120MNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "30829"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1E150GNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E150GNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(4) "2500"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.025980"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 15A 8-HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "15A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.8 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "10nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "590pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3W（Ta），22.9W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 15A 8-HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30829 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），22.9W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E150GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "30921"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E240GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1E240GNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E240GNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(4) "2500"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.775020"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 24A 8-HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "24A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.3 毫欧 @ 24A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "23nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1500pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3W（Ta），27.4W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 24A 8-HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30921 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：24A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），27.4W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E240GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "30927"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E280GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1E280GNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E280GNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(4) "2500"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.314840"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 28A 8-HSOP"
["xl"]=>
string(1) "*"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "28A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.6 毫欧 @ 28A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "36nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2300pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），31W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 28A 8-HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30927 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：28A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），31W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E280GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35015"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rs1e320gn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RS1E320GNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E320GNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(4) "2500"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 32A 8-HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "32A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.9 毫欧 @ 32A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "42.8nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2850pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3W（Ta），34.6W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 32A 8-HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35015 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：32A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），34.6W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E320GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36312"
["pdf_add"]=>
string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rs1e350bntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RS1E350BNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E350BNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 35A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "35A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.7 毫欧 @ 35A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "185nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "7900pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "35W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 35A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36312 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：35A（Ta）
Vgs(最大值)：±20V
功率-最大值：35W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E350BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36395"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1G260MN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1G260MNTBTR-ND"
["zzsbh"]=>
string(11) "RS1G260MNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.747560"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 40V 26A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "26A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.3 毫欧 @ 26A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "44nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2988pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），35W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 26A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36395 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：26A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），35W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1G260MNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36462"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1G300GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1G300GNTBTR-ND"
["zzsbh"]=>
string(11) "RS1G300GNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.977520"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 40V 30A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "30A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.5 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "56.8nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "4230pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），35W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 30A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36462 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：30A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），35W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1G300GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36628"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E130GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1E130GNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E130GNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.822060"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 13A 8-HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "11.7 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "7.9nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "420pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3W（Ta），22.2W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 13A 8-HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36628 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），22.2W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E130GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36685"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E200BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1E200BNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E200BNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.581020"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 20A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "20A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.9 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "59nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），25W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 20A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36685 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），25W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E200BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "36849"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E240BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(16) "RS1E240BNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E240BNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.380170"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 24A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "24A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.2 毫欧 @ 24A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "70nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3900pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 24A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36849 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：24A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E240BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "38105"
["pdf_add"]=>
string(98) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rs1e280bntb-e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RS1E280BNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E280BNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 28A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "28A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.3 毫欧 @ 28A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "94nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 28A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 38105 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：28A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E280BNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "38342"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rs1e200gn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RS1E200GNTBTR-ND"
["zzsbh"]=>
string(11) "RS1E200GNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 20A 8-HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "20A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.6 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "16.8nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1080pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3W（Ta），25.1W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 20A 8-HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 38342 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），25.1W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E200GNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "38505"
["pdf_add"]=>
string(94) "http://rohmfs.rohm.com/en/products/databook/datasheet/discrete/transistor/mosfet/rs1g150mn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Renders/Rohm%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Rohm_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(16) "RS1G150MNTBTR-ND"
["zzsbh"]=>
string(11) "RS1G150MNTB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 40V 15A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "15A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "10.6 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "15nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "930pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "3W（Ta），25W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 15A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 38505 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta），25W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1G150MNTB' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45551"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E281BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "RS1E281BNTB1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.582940"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "RS1E281BN IS LOW ON-RESISTANCE A"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "28A（Ta），80A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.3 毫欧 @ 28A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "94nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591838"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
RS1E281BN IS LOW ON-RESISTANCE A
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45551 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：28A（Ta），80A（Tc）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E281BNTB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45563"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1E321GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "RS1E321GNTB1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.031560"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "RS1E321GN IS A POWER MOSFET WITH"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "32A（Ta），80A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(19) "2.1mOhm @ 32A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(12) "42.8nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2850pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591882"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
RS1E321GN IS A POWER MOSFET WITH
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45563 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：32A（Ta），80A（Tc）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E321GNTB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45583"
["pdf_add"]=>
string(55) "https://www.rohm.com/datasheet/RS1E260AT/rs1e260attb1-e"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(57) "//media.digikey.com/Renders/Rohm%20Renders/Rohm-HSOP8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "RS1E260ATTB1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET P-CH 30V 26A 8HSOP"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "26A（Ta），80A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(19) "3.1mOhm @ 26A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "175nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "7850pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607591950"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
MOSFET P-CH 30V 26A 8HSOP
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45583 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：26A（Ta），80A（Tc）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1E260ATTB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47431"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1L120GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(11) "RS1L120GNTB"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.030610"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "RS1L120GN IS LOW ON - RESISTANCE"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(25) "12A（Ta），36A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "12.7mOhm @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.7V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1330pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926378"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
RS1L120GN IS LOW ON - RESISTANCE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47431 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：12A（Ta），36A（Tc）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：150°C（TJ）
|
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购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1L120GNTB' ) LIMIT 1
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array(74) {
["id"]=>
string(5) "47461"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RS1L145GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7EHSOP8-SINGLE%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/RS1G180MNTB.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(11) "RS1L145GNTB"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.066590"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "RS1L145GN IS THE HIGH RELIABILIT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(27) "14.5A（Ta），47A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(21) "9.7mOhm @ 14.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.7V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "37nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1880pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(6) "8-HSOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926549"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
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select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-HSOP
外壳：8-PowerTDFN
描述：
RS1L145GN IS THE HIGH RELIABILIT
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SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47461 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：14.5A（Ta），47A（Tc）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：150°C（TJ）
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购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RS1L145GNTB' ) LIMIT 1
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