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array(72) { ["id"]=> string(5) "17736" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FDMB668P.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/photos/Fairchild%20Semi%20Photos/FDMB668P.JPG" ["images"]=> string(83) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/FDMB668P.JPG" ["ljbh"]=> string(13) "FDMB668PTR-ND" ["zzsbh"]=> string(8) "FDMB668P" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET P-CH 20V 6.1A MICROFET8" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "6.1A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "35 毫欧 @ 6.1A，4.5V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "59nC @ 10V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(12) "2085pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.9W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(27) "8-MLP，MicroFET（3x1.9）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FDMB668P复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：8-MLP，MicroFET（3x1.9）
外壳：8-PowerWDFN
描述： MOSFET P-CH 20V 6.1A MICROFET8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 17736 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：6.1A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.9W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103917736
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDMB668P' ) LIMIT 1
array(72) { ["id"]=> string(5) "18326" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FDMB506P.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(11) "FDMB506P-ND" ["zzsbh"]=> string(8) "FDMB506P" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET P-CH 20V 6.8A 8MICROFET" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(12) "6.8A（Ta）" ["qddy"]=> string(11) "1.8V，4.5V" ["bt_id_vgs_rds"]=> string(23) "30 毫欧 @ 6.8A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "30nC @ 4.5V" ["vgs_zdz"]=> string(4) "±8V" ["bt_vds_srdr"]=> string(12) "2960pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "1.9W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerWDFN" ["gysqjfz"]=> string(27) "8-MLP，MicroFET（3x1.9）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FDMB506P复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：8-MLP，MicroFET（3x1.9）
外壳：8-PowerWDFN
描述： MOSFET P-CH 20V 6.8A 8MICROFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 18326 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：6.8A（Ta）
Vgs(最大值)：±8V
功率-最大值：1.9W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103918326
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDMB506P' ) LIMIT 1
array(69) { ["id"]=> string(3) "120" ["pdf_add"]=> string(56) "http://www.fairchildsemi.com/datasheets/FD/FDMB3800N.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(68) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/FDMB3800N.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/FDMB3800N.jpg" ["ljbh"]=> string(14) "FDMB3800NTR-ND" ["zzsbh"]=> string(9) "FDMB3800N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET 2N-CH 30V 8MLP MICROFET" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(4) "4.8A" ["bt_id_vgs_rds"]=> string(22) "40 毫欧 @ 4.8A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "5.6nC @ 5V" ["bt_vds_srdr"]=> string(11) "465pF @ 15V" ["gn_zdz"]=> string(5) "750mW" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERWDFN" ["gysqjfz"]=> string(27) "8-MLP，MICROFET（3X1.9）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： FDMB3800N复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：8-MLP，MICROFET（3X1.9）
外壳：8-POWERWDFN
描述： MOSFET 2N-CH 30V 8MLP MICROFET
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 120 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：4.8A
最大功率值：750mW
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041120
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDMB3800N' ) LIMIT 1
array(69) { ["id"]=> string(3) "639" ["pdf_add"]=> string(57) "http://www.fairchildsemi.com/datasheets/FD/FDMB3900AN.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(96) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/8-WDFN%20Exposed%20Pad,%20PowerTrench.jpg" ["images"]=> string(108) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/8-WDFN_Exposed_Pad,_PowerTrench.jpg" ["ljbh"]=> string(15) "FDMB3900ANTR-ND" ["zzsbh"]=> string(10) "FDMB3900AN" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(6) "990000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET 2N-CH 25V 7A 8MLP MICRO" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(2) "7A" ["bt_id_vgs_rds"]=> string(20) "23 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "17nC @ 10V" ["bt_vds_srdr"]=> string(11) "890pF @ 13V" ["gn_zdz"]=> string(5) "800mW" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-POWERWDFN" ["gysqjfz"]=> string(27) "8-MLP，MICROFET（3X1.9）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： FDMB3900AN复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：8-MLP，MICROFET（3X1.9）
外壳：8-POWERWDFN
描述： MOSFET 2N-CH 25V 7A 8MLP MICRO
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 639 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：25V
电流-连续漏极(id)：7A
最大功率值：800mW
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041639
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDMB3900AN' ) LIMIT 1

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