array(74) {
["id"]=>
string(3) "767"
["pdf_add"]=>
string(85) "https://www.infineon.com/dgdl/irfh3707pbf.pdf?fileId=5546d462533600a40153561a2e0b1e78"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(80) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFH3707TR2PBF.jpg"
["images"]=>
string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRFH3707TR2PBF.jpg"
["images_dir"]=>
string(31) "./images/1039/IRFH3707TRPBF.jpg"
["ljbh"]=>
string(16) "IRFH3707TRPBF-ND"
["zzsbh"]=>
string(13) "IRFH3707TRPBF"
["zddgs"]=>
string(4) "4000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.384100"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 30V 12A/29A 8QFN"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "12A（Ta），29A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "12.4 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.35V @ 25µA"
["bt_vgs_sjdh"]=>
string(12) "8.1nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "755pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "2.8W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(15) "8-PQFN（3x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "4000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-PQFN（3x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 12A/29A 8QFN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 767 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta），29A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
4000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFH3707TRPBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "792"
["pdf_add"]=>
string(86) "https://www.infineon.com/dgdl/irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4850/448_8-PowerTDFN.jpg"
["images_dir"]=>
string(32) "./images/1039/IRFHM3911TRPBF.jpg"
["ljbh"]=>
string(17) "IRFHM3911TRPBF-ND"
["zzsbh"]=>
string(14) "IRFHM3911TRPBF"
["zddgs"]=>
string(4) "4000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.807180"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 100V 10A PQFN"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(26) "3.2A（Ta），20A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "115 毫欧 @ 6.3A，10V"
["bt_id_vgs_zdz"]=>
string(10) "4V @ 35µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "760pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），29W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(15) "8-PQFN（3x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "4000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-PQFN（3x3）
外壳：8-PowerTDFN
描述：
MOSFET N-CH 100V 10A PQFN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 792 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：3.2A（Ta），20A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），29W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
4000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM3911TRPBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "919"
["pdf_add"]=>
string(86) "https://www.infineon.com/dgdl/irfhm4231pbf.pdf?fileId=5546d462533600a40153562001cd1f2f"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4850/448_8-PowerTDFN.jpg"
["images_dir"]=>
string(32) "./images/1039/IRFHM3911TRPBF.jpg"
["ljbh"]=>
string(19) "IRFHM4231TRPBFTR-ND"
["zzsbh"]=>
string(14) "IRFHM4231TRPBF"
["zddgs"]=>
string(4) "4000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET N-CH 25V 40A PQFN"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.4 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(12) "2.1V @ 35µA"
["bt_vgs_sjdh"]=>
string(10) "20nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1270pF @ 13V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.7W（Ta），29W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(15) "8-PQFN（3x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-PQFN（3x3）
外壳：8-PowerTDFN
描述：
MOSFET N-CH 25V 40A PQFN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 919 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.7W（Ta），29W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM4231TRPBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "19574"
["pdf_add"]=>
string(85) "https://www.infineon.com/dgdl/irfh3702pbf.pdf?fileId=5546d462533600a40153561a25871e76"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(80) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFH3707TR2PBF.jpg"
["images"]=>
string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRFH3707TR2PBF.jpg"
["images_dir"]=>
string(31) "./images/1039/IRFH3707TRPBF.jpg"
["ljbh"]=>
string(19) "IRFH3702TR2PBFCT-ND"
["zzsbh"]=>
string(14) "IRFH3702TR2PBF"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 16A 8PQFN"
["xl"]=>
string(1) "*"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "16A（Ta），42A（Tc）"
["qddy"]=>
string(25) "16A（Ta），42A（Tc）"
["bt_id_vgs_rds"]=>
string(22) "7.1 毫欧 @ 16A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.35V @ 25µA"
["bt_vgs_sjdh"]=>
string(11) "14nC @ 4.5V"
["vgs_zdz"]=>
string(11) "14nC @ 4.5V"
["bt_vds_srdr"]=>
string(12) "1510pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(1) "-"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(15) "8-PQFN（3x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-PQFN（3x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 16A 8PQFN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19574 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），42A（Tc）
Vgs(最大值)：14nC @ 4.5V
功率-最大值：-
工作温度：-
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFH3702TR2PBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20365"
["pdf_add"]=>
string(85) "https://www.infineon.com/dgdl/irfh3707pbf.pdf?fileId=5546d462533600a40153561a2e0b1e78"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(80) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFH3707TR2PBF.jpg"
["images"]=>
string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRFH3707TR2PBF.jpg"
["images_dir"]=>
string(31) "./images/1039/IRFH3707TRPBF.jpg"
["ljbh"]=>
string(19) "IRFH3707TR2PBFTR-ND"
["zzsbh"]=>
string(14) "IRFH3707TR2PBF"
["zddgs"]=>
string(3) "400"
["xysl"]=>
string(3) "400"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.907350"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 12A PQFN33"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "12A（Ta），29A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "12.4 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.35V @ 25µA"
["bt_vgs_sjdh"]=>
string(12) "8.1nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "755pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "2.8W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(15) "8-PQFN（3x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1200"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-PQFN（3x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 12A PQFN33
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20365 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta），29A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1200个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFH3707TR2PBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32339"
["pdf_add"]=>
string(85) "https://www.infineon.com/dgdl/irfh3702pbf.pdf?fileId=5546d462533600a40153561a25871e76"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(80) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFH3707TR2PBF.jpg"
["images"]=>
string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRFH3707TR2PBF.jpg"
["images_dir"]=>
string(31) "./images/1039/IRFH3707TRPBF.jpg"
["ljbh"]=>
string(18) "IRFH3702TRPBFTR-ND"
["zzsbh"]=>
string(13) "IRFH3702TRPBF"
["zddgs"]=>
string(4) "4000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.943060"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 16A 8PQFN"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "16A（Ta），42A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.1 毫欧 @ 16A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.35V @ 25µA"
["bt_vgs_sjdh"]=>
string(11) "14nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1510pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "2.8W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(15) "8-PQFN（3x3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "4000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "热销"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-PQFN（3x3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 16A 8PQFN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32339 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），42A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
4000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFH3702TRPBF' ) LIMIT 1
供应商:
库存:2K+
|
