array(74) {
["id"]=>
string(4) "8467"
["pdf_add"]=>
string(60) "http://www.fairchildsemi.com/datasheets/FD/FDS9431A_F085.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(80) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/261;MKT-M08A;M,D,TF;8.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp"
["images_dir"]=>
string(27) "./images/1039/STS5PF30Lwebp"
["ljbh"]=>
string(18) "FDS9431A_F085TR-ND"
["zzsbh"]=>
string(13) "FDS9431A_F085"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(22) "MOSFET P-CH 20V 8-SOIC"
["xl"]=>
string(20) "汽车级，AEC-Q101"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(33) "MOSFET P 通道，金属氧化物"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(12) "3.5A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(24) "130 毫欧 @ 3.5A，4.5V"
["bt_id_vgs_zdz"]=>
string(11) "1V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "8.5nC @ 4.5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(11) "405pF @ 10V"
["fetgn"]=>
string(32) "逻辑电平栅极，2.5V 驱动"
["gn_zdz"]=>
string(2) "1W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 20V 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8467 ) LIMIT 1
Fet类型：MOSFET P 通道，金属氧化物
漏源极电压(vdss)：20V
电流-连续漏极(id)：3.5A（Ta）
Vgs(最大值)：
功率-最大值：1W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
带卷（TR）
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS9431A_F085' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "10502"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1144/FDS7296N3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(12) "FDS7296N3-ND"
["zzsbh"]=>
string(9) "FDS7296N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 15A 8SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "15A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "8 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "32nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1540pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 15A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10502 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS7296N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "10524"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/721/FDS7066N3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(12) "FDS7066N3-ND"
["zzsbh"]=>
string(9) "FDS7066N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 23A 8SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "23A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.5 毫欧 @ 23A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(9) "69nC @ 5V"
["vgs_zdz"]=>
string(5) "±16V"
["bt_vds_srdr"]=>
string(12) "4973pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 23A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10524 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：23A（Ta）
Vgs(最大值)：±16V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS7066N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "10525"
["pdf_add"]=>
string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1104/FDS7088SN3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(13) "FDS7088SN3-ND"
["zzsbh"]=>
string(10) "FDS7088SN3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 21A 8SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "21A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "4 毫欧 @ 21A，10V"
["bt_id_vgs_zdz"]=>
string(8) "3V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "80nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3230pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 21A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 10525 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：21A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS7088SN3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14668"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1158/FDS2070N3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS2070N3TR-ND"
["zzsbh"]=>
string(9) "FDS2070N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 150V 4.1A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "150V"
["dl_lxlj"]=>
string(12) "4.1A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "78 毫欧 @ 4.1A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "53nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1884pF @ 75V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 150V 4.1A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14668 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：4.1A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS2070N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14671"
["pdf_add"]=>
string(87) "https://rocelec.widen.net/view/pdf/rntcellrq9/FAIRS35274-1.pdf?t.download=true&u=5oefqw"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/5442/MFG_INFINFICE2QR4765XKLA1.jpg"
["images_dir"]=>
string(27) "./images/1039/FDS2070N7.jpg"
["ljbh"]=>
string(14) "FDS2070N7TR-ND"
["zzsbh"]=>
string(9) "FDS2070N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 150V 4.1A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "150V"
["dl_lxlj"]=>
string(12) "4.1A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "78 毫欧 @ 4.1A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "53nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1884pF @ 75V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 150V 4.1A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14671 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：4.1A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS2070N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14680"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/927/FDS3170N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS3170N7TR-ND"
["zzsbh"]=>
string(9) "FDS3170N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 100V 6.7A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(12) "6.7A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "26 毫欧 @ 6.7A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "77nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2714pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 100V 6.7A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14680 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：6.7A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS3170N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14683"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/967/FDS4070N3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS4070N3TR-ND"
["zzsbh"]=>
string(9) "FDS4070N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.454560"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 15.3A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(13) "15.3A（Ta）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(24) "7.5 毫欧 @ 15.3A，10V"
["bt_id_vgs_zdz"]=>
string(11) "5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "67nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2819pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 40V 15.3A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14683 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：15.3A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS4070N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14686"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/703/FDS4070N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS4070N7TR-ND"
["zzsbh"]=>
string(9) "FDS4070N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 15.3A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(13) "15.3A（Ta）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "7 毫欧 @ 15.3A，10V"
["bt_id_vgs_zdz"]=>
string(11) "5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "67nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2819pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 40V 15.3A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14686 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：15.3A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS4070N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14689"
["pdf_add"]=>
string(68) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FDS4072N3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp"
["images_dir"]=>
string(27) "./images/1039/STS5PF30Lwebp"
["ljbh"]=>
string(14) "FDS4072N3TR-ND"
["zzsbh"]=>
string(9) "FDS4072N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 12.4A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(13) "12.4A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "10 毫欧 @ 13.7A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "46nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "4299pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 40V 12.4A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14689 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：12.4A（Ta）
Vgs(最大值)：±12V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS4072N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14692"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/808/FDS4072N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS4072N7TR-ND"
["zzsbh"]=>
string(9) "FDS4072N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 12.4A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(13) "12.4A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "9 毫欧 @ 13.7A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "46nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "4299pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 40V 12.4A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14692 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：12.4A（Ta）
Vgs(最大值)：±12V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS4072N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14695"
["pdf_add"]=>
string(87) "https://rocelec.widen.net/view/pdf/k7eyqio2ak/FAIRS34748-1.pdf?t.download=true&u=5oefqw"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/5442/MFG_INFINFICE2QR4765XKLA1.jpg"
["images_dir"]=>
string(27) "./images/1039/FDS2070N7.jpg"
["ljbh"]=>
string(14) "FDS4080N3TR-ND"
["zzsbh"]=>
string(9) "FDS4080N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 40V 13A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "10.5 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(11) "5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "40nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1750pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 40V 13A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14695 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS4080N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14698"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/843/FDS4080N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS4080N7TR-ND"
["zzsbh"]=>
string(9) "FDS4080N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 40V 13A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "10 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(11) "5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "40nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1750pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "3.9W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 40V 13A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14698 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：3.9W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS4080N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14701"
["pdf_add"]=>
string(68) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FDS5170N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp"
["images_dir"]=>
string(27) "./images/1039/STS5PF30Lwebp"
["ljbh"]=>
string(14) "FDS5170N7TR-ND"
["zzsbh"]=>
string(9) "FDS5170N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 60V 10.6A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(13) "10.6A（Ta）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(23) "12 毫欧 @ 10.6A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "71nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2889pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 60V 10.6A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14701 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：10.6A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS5170N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14704"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1149/FDS6064N3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS6064N3TR-ND"
["zzsbh"]=>
string(9) "FDS6064N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 20V 23A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "23A（Ta）"
["qddy"]=>
string(11) "1.8V，4.5V"
["bt_id_vgs_rds"]=>
string(21) "4 毫欧 @ 23A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "98nC @ 4.5V"
["vgs_zdz"]=>
string(4) "±8V"
["bt_vds_srdr"]=>
string(12) "7191pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 20V 23A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14704 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：23A（Ta）
Vgs(最大值)：±8V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS6064N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14707"
["pdf_add"]=>
string(68) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FDS6064N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp"
["images_dir"]=>
string(27) "./images/1039/STS5PF30Lwebp"
["ljbh"]=>
string(14) "FDS6064N7TR-ND"
["zzsbh"]=>
string(9) "FDS6064N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 20V 23A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "23A（Ta）"
["qddy"]=>
string(11) "1.8V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "3.5 毫欧 @ 23A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "98nC @ 4.5V"
["vgs_zdz"]=>
string(4) "±8V"
["bt_vds_srdr"]=>
string(12) "7191pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 20V 23A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14707 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：23A（Ta）
Vgs(最大值)：±8V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS6064N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14710"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/967/FDS6162N3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS6162N3TR-ND"
["zzsbh"]=>
string(9) "FDS6162N3"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.454560"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 20V 21A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "21A（Ta）"
["qddy"]=>
string(11) "2.5V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "4.5 毫欧 @ 21A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "73nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "5521pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 20V 21A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14710 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：21A（Ta）
Vgs(最大值)：±12V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS6162N3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14713"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1047/FDS6162N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS6162N7TR-ND"
["zzsbh"]=>
string(9) "FDS6162N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 20V 23A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "23A（Ta）"
["qddy"]=>
string(11) "2.5V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "3.5 毫欧 @ 23A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "73nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "5521pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 20V 23A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14713 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：23A（Ta）
Vgs(最大值)：±12V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS6162N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14716"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1034/FDS7060N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS7060N7TR-ND"
["zzsbh"]=>
string(9) "FDS7060N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 19A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "19A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "5 毫欧 @ 19A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(9) "56nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3274pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 19A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14716 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：19A（Ta）
Vgs(最大值)：±20V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS7060N7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14719"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1047/FDS7064N7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "FDS7064N7TR-ND"
["zzsbh"]=>
string(9) "FDS7064N7"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.906550"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 30V 16.5A 8-SOIC"
["xl"]=>
string(13) "PowerTrench®"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(13) "16.5A（Ta）"
["qddy"]=>
string(4) "4.5V"
["bt_id_vgs_rds"]=>
string(23) "7 毫欧 @ 16.5A，4.5V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "48nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "3355pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(4) "8-SO"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 16.5A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14719 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16.5A（Ta）
Vgs(最大值)：±12V
功率-最大值：3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDS7064N7' ) LIMIT 1
|
