array(74) {
["id"]=>
string(4) "5533"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RRH090P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(15) "RRH090P03TB1-ND"
["zzsbh"]=>
string(12) "RRH090P03TB1"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.058140"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET P-CH 30V 9A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "9A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(22) "15.4 毫欧 @ 9A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "30nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3000pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(13) "650mW（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 9A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5533 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta）
Vgs(最大值)：±20V
功率-最大值：650mW（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RRH090P03TB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5556"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/969/rss100n03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS100N03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS100N03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 10A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(21) "13 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "14nC @ 5V"
["vgs_zdz"]=>
string(3) "20V"
["bt_vds_srdr"]=>
string(12) "1070pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 10A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5556 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS100N03FU6TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5681"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1291/RSH125N03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(17) "RSH125N03TB1TR-ND"
["zzsbh"]=>
string(12) "RSH125N03TB1"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.518910"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 12.5A SOP8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(13) "12.5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(24) "9.1 毫欧 @ 12.5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "28nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1670pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(1) "-"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 12.5A SOP8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5681 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：-
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSH125N03TB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5777"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/928/rss110n03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS110N03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS110N03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 11A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "11A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(23) "10.7 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "17nC @ 5V"
["vgs_zdz"]=>
string(3) "20V"
["bt_vds_srdr"]=>
string(12) "1300pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 11A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5777 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta）
Vgs(最大值)：20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS110N03FU6TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5780"
["pdf_add"]=>
string(63) "//media.digikey.com/pdf/Data%20Sheets/Rohm%20PDFs/rss075p03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp"
["images_dir"]=>
string(27) "./images/1039/STS5PF30Lwebp"
["ljbh"]=>
string(16) "RSS075P03TBTR-ND"
["zzsbh"]=>
string(11) "RSS075P03TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET P-CH 30V 7.5A 8-SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "7.5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(22) "21 毫欧 @ 7.5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "30nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2900pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 7.5A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5780 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：7.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS075P03TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5850"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/969/rss125n03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS125N03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS125N03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 30V 12.5A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(13) "12.5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(24) "8.9 毫欧 @ 12.5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "28nC @ 5V"
["vgs_zdz"]=>
string(3) "20V"
["bt_vds_srdr"]=>
string(12) "1670pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 12.5A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5850 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12.5A（Ta）
Vgs(最大值)：20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS125N03FU6TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5890"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RSS125N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(16) "RSS125N03TBTR-ND"
["zzsbh"]=>
string(11) "RSS125N03TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 30V 12.5A 8-SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(13) "12.5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(24) "8.9 毫欧 @ 12.5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "28nC @ 5V"
["vgs_zdz"]=>
string(3) "20V"
["bt_vds_srdr"]=>
string(12) "1670pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 12.5A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5890 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12.5A（Ta）
Vgs(最大值)：20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS125N03TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5914"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1171/rss075p03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS075P03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS075P03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET P-CH 30V 7.5A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "7.5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(22) "21 毫欧 @ 7.5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "30nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2900pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 7.5A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5914 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：7.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS075P03FU6TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7014"
["pdf_add"]=>
string(0) ""
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(54) "//media.digikey.com/Photos/Rohm%20Photos/MFG_TSOP8.jpg"
["images"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/539/MFG_TSOP8.jpg"
["images_dir"]=>
string(30) "./images/1039/RRS100P03TB1.jpg"
["ljbh"]=>
string(15) "RRS100P03TB1-ND"
["zzsbh"]=>
string(12) "RRS100P03TB1"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET P-CH 30V 10A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(11) "10A（Ta）"
["bt_id_vgs_rds"]=>
string(1) "-"
["bt_id_vgs_zdz"]=>
string(1) "-"
["bt_vgs_sjdh"]=>
string(1) "-"
["vgs_zdz"]=>
string(1) "-"
["bt_vds_srdr"]=>
string(1) "-"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(1) "-"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 10A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7014 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：-
功率-最大值：-
工作温度：-
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RRS100P03TB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7044"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RSH140N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(17) "RSH140N03TB1TR-ND"
["zzsbh"]=>
string(12) "RSH140N03TB1"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.030080"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET N-CH 30V 14A SOP8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "14A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(1) "-"
["bt_id_vgs_zdz"]=>
string(1) "-"
["bt_vgs_sjdh"]=>
string(1) "-"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(5) "±20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 14A SOP8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7044 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSH140N03TB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7052"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/982/rss130n03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS130N03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS130N03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET N-CH 30V 13A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.1 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "35nC @ 5V"
["vgs_zdz"]=>
string(3) "20V"
["bt_vds_srdr"]=>
string(12) "2000pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 13A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7052 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS130N03FU6TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7208"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RRH050P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(17) "RRH050P03TB1TR-ND"
["zzsbh"]=>
string(12) "RRH050P03TB1"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.191520"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(23) "MOSFET P-CH 30V 5A SOP8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(20) "50 毫欧 @ 5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "9.2nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "850pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(13) "650mW（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2500"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 5A SOP8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7208 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：5A（Ta）
Vgs(最大值)：±20V
功率-最大值：650mW（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2500个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RRH050P03TB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7229"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1157/rss090p03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS090P03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS090P03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET P-CH 30V 9A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "9A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(20) "14 毫欧 @ 9A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "39nC @ 5V"
["vgs_zdz"]=>
string(3) "20V"
["bt_vds_srdr"]=>
string(12) "4000pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 9A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7229 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta）
Vgs(最大值)：20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS090P03FU6TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8373"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RSS050P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(16) "RSS050P03TBTR-ND"
["zzsbh"]=>
string(11) "RSS050P03TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(25) "MOSFET P-CH 30V 5A 8-SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(20) "42 毫欧 @ 5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "13nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1200pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 5A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8373 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：5A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS050P03TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8376"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RSS100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(16) "RSS100N03TBTR-ND"
["zzsbh"]=>
string(11) "RSS100N03TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 10A 8-SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(21) "13 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "14nC @ 5V"
["vgs_zdz"]=>
string(3) "20V"
["bt_vds_srdr"]=>
string(12) "1070pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 10A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8376 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS100N03TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9017"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RSH100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(17) "RSH100N03TB1TR-ND"
["zzsbh"]=>
string(12) "RSH100N03TB1"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET N-CH 30V 10A SOP8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "10A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(23) "13.3 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "20nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1070pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(1) "-"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 10A SOP8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9017 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：10A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：-
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSH100N03TB1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9045"
["pdf_add"]=>
string(112) "https://www.rohm.com.cn/datasheet?p=RSS065N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(16) "RSS065N03TBTR-ND"
["zzsbh"]=>
string(11) "RSS065N03TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 30V 6.5A 8-SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "6.5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(22) "26 毫欧 @ 6.5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "6.1nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "430pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 6.5A 8-SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9045 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：6.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS065N03TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9090"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/876/rss065n03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS065N03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS065N03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 6.5A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "6.5A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(22) "26 毫欧 @ 6.5A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "6.1nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "430pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 30V 6.5A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9090 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：6.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS065N03FU6TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9161"
["pdf_add"]=>
string(72) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/407/ZDS020N60.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(70) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-SOIC.jpg"
["images_dir"]=>
string(34) "./images/1039/IXT-1-1N100S1-TR.jpg"
["ljbh"]=>
string(14) "ZDS020N60TB-ND"
["zzsbh"]=>
string(11) "ZDS020N60TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(22) "MOSFET N-CH 600V 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(13) "630mA（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "5 欧姆 @ 500mA，10V"
["bt_id_vgs_zdz"]=>
string(8) "4V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "20nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(11) "310pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET N-CH 600V 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9161 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：630mA（Tc）
Vgs(最大值)：±30V
功率-最大值：2W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'ZDS020N60TB' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9200"
["pdf_add"]=>
string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1046/rss040p03.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(72) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC,%208-SOP.jpg"
["images"]=>
string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6336/846%7E8SOP-3.9%7EF%7E8.JPG"
["images_dir"]=>
string(32) "./images/1039/RSS100N03FU6TB.JPG"
["ljbh"]=>
string(17) "RSS040P03FU6TB-ND"
["zzsbh"]=>
string(14) "RSS040P03FU6TB"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(24) "MOSFET P-CH 30V 4A 8SOIC"
["xl"]=>
string(1) "-"
["zzs"]=>
string(11) "ROHM/罗姆"
["zzs_new"]=>
string(11) "ROHM/罗姆"
["zzs_old"]=>
string(18) "Rohm Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "4A（Ta）"
["qddy"]=>
string(8) "4V，10V"
["bt_id_vgs_rds"]=>
string(20) "58 毫欧 @ 4A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(8) "8nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "800pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(10) "2W（Ta）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(24) "8-SOIC(宽3.9mm p1.27mm)"
["gysqjfz"]=>
string(5) "8-SOP"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "769"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-SOP
外壳：8-SOIC(宽3.9mm p1.27mm)
描述：
MOSFET P-CH 30V 4A 8SOIC
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9200 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：4A（Ta）
Vgs(最大值)：±20V
功率-最大值：2W（Ta）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'RSS040P03FU6TB' ) LIMIT 1
|
