array(74) {
["id"]=>
string(4) "5606"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=14596&prodName=TPN1110ENH"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Renders/Toshiba%20Renders/8-PowerVDFN%20PKG.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2450/8-PowerVDFN%20PKG.jpg"
["images_dir"]=>
string(32) "./images/1039/TPN1110ENH,L1Q.jpg"
["ljbh"]=>
string(18) "TPN1110ENHL1QTR-ND"
["zzsbh"]=>
string(14) "TPN1110ENH,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.023610"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(27) "MOSFET N-CH 200V 7.2A 8TSON"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "200V"
["dl_lxlj"]=>
string(12) "7.2A（Ta）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "114 毫欧 @ 3.6A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 200µA"
["bt_vgs_sjdh"]=>
string(9) "7nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "600pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），39W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 200V 7.2A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5606 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：7.2A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），39W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN1110ENH,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6628"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13938&prodName=TPN2R203NC"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/500/8-PowerVDFN%2C-8-TSON.jpg"
["images_dir"]=>
string(32) "./images/1039/TPN2R203NC,L1Q.jpg"
["ljbh"]=>
string(18) "TPN2R203NCL1QTR-ND"
["zzsbh"]=>
string(14) "TPN2R203NC,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.607490"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(26) "MOSFET N-CH 30V 45A 8-TSON"
["xl"]=>
string(9) "U-MOSVIII"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "45A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(24) "2.2 毫欧 @ 22.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 500µA"
["bt_vgs_sjdh"]=>
string(10) "34nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2230pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），42W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 45A 8-TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6628 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN2R203NC,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8108"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13721&prodName=TPN14006NH"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/500/8-PowerVDFN%2C-8-TSON.jpg"
["images_dir"]=>
string(32) "./images/1039/TPN2R203NC,L1Q.jpg"
["ljbh"]=>
string(18) "TPN14006NHL1QTR-ND"
["zzsbh"]=>
string(14) "TPN14006NH,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.730230"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(29) "MOSFET N CH 60V 13A 8TSON-ADV"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(10) "6.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "14 毫欧 @ 6.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "15nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1300pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N CH 60V 13A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8108 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN14006NH,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8151"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13640&prodName=TPN6R303NC"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/509/8-PowerVDFN.jpg"
["images_dir"]=>
string(31) "./images/1039/TPN6R303NC,LQ.jpg"
["ljbh"]=>
string(17) "TPN6R303NCLQTR-ND"
["zzsbh"]=>
string(13) "TPN6R303NC,LQ"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.356290"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(29) "MOSFET N CH 30V 20A 8TSON-ADV"
["xl"]=>
string(9) "U-MOSVIII"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "20A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.3 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "24nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1370pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），19W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N CH 30V 20A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8151 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），19W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN6R303NC,LQ' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8267"
["pdf_add"]=>
string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=6792&prodName=TPCC8066-H"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(1) " "
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "TPCC8066-HLQ(S-ND"
["zzsbh"]=>
string(15) "TPCC8066-H,LQ(S"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(29) "MOSFET N-CH 30V 11A 8TSON-ADV"
["xl"]=>
string(10) "U-MOSVII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "11A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "15 毫欧 @ 5.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 100µA"
["bt_vgs_sjdh"]=>
string(10) "15nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1100pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），17W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 11A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8267 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），17W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8066-H,LQ(S' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8441"
["pdf_add"]=>
string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=3500&prodName=TPCC8065-H"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(1) " "
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "TPCC8065-HLQ(S-ND"
["zzsbh"]=>
string(15) "TPCC8065-H,LQ(S"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(29) "MOSFET N-CH 30V 13A 8TSON-ADV"
["xl"]=>
string(10) "U-MOSVII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "11.4 毫欧 @ 6.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "20nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1350pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），18W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 13A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8441 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），18W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8065-H,LQ(S' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8912"
["pdf_add"]=>
string(80) "https://toshiba.semicon-storage.com/info/docget.jsp?did=6789&prodName=TPCC8067-H"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(1) " "
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "TPCC8067-HLQ(S-ND"
["zzsbh"]=>
string(15) "TPCC8067-H,LQ(S"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(28) "MOSFET N-CH 30V 9A 8TSON-ADV"
["xl"]=>
string(10) "U-MOSVII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(10) "9A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "25 毫欧 @ 4.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 100µA"
["bt_vgs_sjdh"]=>
string(11) "9.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "690pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），15W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 9A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8912 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），15W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8067-H,LQ(S' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9405"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13638&prodName=TPN2R503NC"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(1) " "
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "TPN2R503NCL1QTR-ND"
["zzsbh"]=>
string(14) "TPN2R503NC,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(29) "MOSFET N CH 30V 40A 8TSON-ADV"
["xl"]=>
string(9) "U-MOSVIII"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "40A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.5 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 500µA"
["bt_vgs_sjdh"]=>
string(10) "40nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2230pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），35W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N CH 30V 40A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9405 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：40A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），35W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN2R503NC,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "15081"
["pdf_add"]=>
string(75) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/Mosfets_Prod_Guide.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(1) " "
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(15) "TPCC8009LQ(O-ND"
["zzsbh"]=>
string(13) "TPCC8009,LQ(O"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(29) "MOSFET N-CH 30V 24A 8TSON-ADV"
["xl"]=>
string(7) "U-MOSIV"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "24A（Ta）"
["qddy"]=>
string(11) "24A（Ta）"
["bt_id_vgs_rds"]=>
string(20) "7 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["vgs_zdz"]=>
string(10) "26nC @ 10V"
["bt_vds_srdr"]=>
string(12) "1270pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 24A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15081 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：24A（Ta）
Vgs(最大值)：26nC @ 10V
功率-最大值：-
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8009,LQ(O' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "15745"
["pdf_add"]=>
string(67) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPCC8001-H.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(23) "TPCC8001-H(TE12LQMTR-ND"
["zzsbh"]=>
string(18) "TPCC8001-H(TE12LQM"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(25) "MOSFET N-CH 30V 22A 8TSON"
["xl"]=>
string(8) "U-MOSV-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "22A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.3 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "27nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2500pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 22A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15745 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8001-H(TE12LQM' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "15748"
["pdf_add"]=>
string(67) "//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/TPCC8002-H.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/8-VDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(23) "TPCC8002-H(TE12LQMTR-ND"
["zzsbh"]=>
string(18) "TPCC8002-H(TE12LQM"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(25) "MOSFET N-CH 30V 22A 8TSON"
["xl"]=>
string(8) "U-MOSV-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "22A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.3 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "27nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2500pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 22A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15748 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8002-H(TE12LQM' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "15751"
["pdf_add"]=>
string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4819/TPCC8003-H.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg"
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6449/264%7E2-3X1A%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/TPCC8003-H(TE12LQM.jpg"
["ljbh"]=>
string(23) "TPCC8003-H(TE12LQMTR-ND"
["zzsbh"]=>
string(18) "TPCC8003-H(TE12LQM"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(25) "MOSFET N-CH 30V 13A 8TSON"
["xl"]=>
string(9) "U-MOSVI-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "13A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "16.9 毫欧 @ 6.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1300pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），22W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 13A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15751 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），22W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8003-H(TE12LQM' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "15754"
["pdf_add"]=>
string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4819/TPCC8005-H.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg"
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6449/264%7E2-3X1A%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/TPCC8003-H(TE12LQM.jpg"
["ljbh"]=>
string(23) "TPCC8005-H(TE12LQMTR-ND"
["zzsbh"]=>
string(18) "TPCC8005-H(TE12LQM"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(25) "MOSFET N-CH 30V 26A 8TSON"
["xl"]=>
string(9) "U-MOSVI-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "26A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.4 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 500µA"
["bt_vgs_sjdh"]=>
string(10) "35nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2900pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），30W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 26A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15754 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：26A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），30W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8005-H(TE12LQM' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "15757"
["pdf_add"]=>
string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4819/TPCC8006-H.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-VDFN.jpg"
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6449/264%7E2-3X1A%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/TPCC8003-H(TE12LQM.jpg"
["ljbh"]=>
string(23) "TPCC8006-H(TE12LQMTR-ND"
["zzsbh"]=>
string(18) "TPCC8006-H(TE12LQM"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933785"
["ms"]=>
string(25) "MOSFET N-CH 30V 22A 8TSON"
["xl"]=>
string(9) "U-MOSVI-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "22A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "8 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "27nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2200pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），27W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 22A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15757 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），27W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPCC8006-H(TE12LQM' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "23175"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=28741&prodName=TPN4R712MD"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Renders/Toshiba%20Renders/8-PowerVDFN%20PKG.jpg"
["images"]=>
string(85) "https://www.chenkeiot.com/Public/imagesmk/Renders/Toshiba_Renders/8-PowerVDFN_PKG.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "TPN4R712MDL1QTR-ND"
["zzsbh"]=>
string(14) "TPN4R712MD,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(29) "MOSFET P-CH 20V 36A 8TSON ADV"
["xl"]=>
string(7) "U-MOSVI"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "36A（Tc）"
["qddy"]=>
string(11) "2.5V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "4.7 毫欧 @ 18A，4.5V"
["bt_id_vgs_zdz"]=>
string(10) "1.2V @ 1mA"
["bt_vgs_sjdh"]=>
string(9) "65nC @ 5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "4300pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "42W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET P-CH 20V 36A 8TSON ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23175 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：36A（Tc）
Vgs(最大值)：±12V
功率-最大值：42W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN4R712MD,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "23400"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13874&prodName=TPN7R506NH"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN.jpg"
["images"]=>
string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/509/8-PowerVDFN.jpg"
["images_dir"]=>
string(31) "./images/1039/TPN6R303NC,LQ.jpg"
["ljbh"]=>
string(18) "TPN7R506NHL1QTR-ND"
["zzsbh"]=>
string(14) "TPN7R506NH,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.115650"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(25) "MOSFET N-CH 60V 26A 8TSON"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "26A（Tc）"
["qddy"]=>
string(10) "6.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.5 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "22nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1800pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），42W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 60V 26A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23400 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：26A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN7R506NH,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "23436"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13537&prodName=TPN13008NH"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg"
["images"]=>
string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/509/8-PowerVDFN.jpg"
["images_dir"]=>
string(31) "./images/1039/TPN6R303NC,LQ.jpg"
["ljbh"]=>
string(18) "TPN13008NHL1QTR-ND"
["zzsbh"]=>
string(14) "TPN13008NH,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.206490"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(25) "MOSFET N-CH 80V 40A 8TSON"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(11) "18A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "13.3 毫欧 @ 9A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "18nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1600pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），42W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 80V 40A 8TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23436 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：18A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN13008NH,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "24071"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=14267&prodName=TPN2R703NL"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/500/8-PowerVDFN%2C-8-TSON.jpg"
["images_dir"]=>
string(32) "./images/1039/TPN2R203NC,L1Q.jpg"
["ljbh"]=>
string(18) "TPN2R703NLL1QTR-ND"
["zzsbh"]=>
string(14) "TPN2R703NL,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(5) "10000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.711580"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(26) "MOSFET N-CH 30V 45A 8-TSON"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "45A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "2.7 毫欧 @ 22.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 300µA"
["bt_vgs_sjdh"]=>
string(10) "21nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），42W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 45A 8-TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24071 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），42W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN2R703NL,L1Q' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "24855"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=14026&prodName=TPN8R903NL"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg"
["images"]=>
string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Toshiba_Photos/8-PowerVDFN,-8-TSON.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "TPN8R903NLLQTR-ND"
["zzsbh"]=>
string(13) "TPN8R903NL,LQ"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(24) "MOSFET N-CH 30V 20A TSON"
["xl"]=>
string(11) "U-MOSVIII-H"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "20A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.9 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 100µA"
["bt_vgs_sjdh"]=>
string(12) "9.8nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "820pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），22W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N-CH 30V 20A TSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24855 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），22W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN8R903NL,LQ' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "24972"
["pdf_add"]=>
string(81) "https://toshiba.semicon-storage.com/info/docget.jsp?did=13633&prodName=TPN4R203NC"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(67) "//media.digikey.com/Photos/Toshiba%20Photos/8-PowerVDFN,-8-TSON.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/500/8-PowerVDFN%2C-8-TSON.jpg"
["images_dir"]=>
string(32) "./images/1039/TPN2R203NC,L1Q.jpg"
["ljbh"]=>
string(18) "TPN4R203NCL1QTR-ND"
["zzsbh"]=>
string(14) "TPN4R203NC,L1Q"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.423310"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1708933803"
["ms"]=>
string(29) "MOSFET N CH 30V 23A 8TSON-ADV"
["xl"]=>
string(9) "U-MOSVIII"
["zzs"]=>
string(14) "TOSHIBA/东芝"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(21) "Toshiba Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(11) "23A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "4.2 毫欧 @ 11.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 200µA"
["bt_vgs_sjdh"]=>
string(10) "24nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1370pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "700mW（Ta），22W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(27) "8-TSON Advance（3.3x3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：8-TSON Advance（3.3x3.3）
外壳：8-PowerVDFN
描述：
MOSFET N CH 30V 23A 8TSON-ADV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24972 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：23A（Ta）
Vgs(最大值)：±20V
功率-最大值：700mW（Ta），22W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'TPN4R203NC,L1Q' ) LIMIT 1
|
