TI公司介绍和产品目录_TI/德州仪器_德州仪器专区_授权代理商

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(74) { ["id"]=> string(5) "26983" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd16322q5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-25112-2-ND" ["zzsbh"]=> string(10) "CSD16322Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "2.566000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 25V 21A/97A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "21A（Ta），97A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(19) "5 毫欧 @ 20A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "9.7nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(14) "1365pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.1W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16322" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16322Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 21A/97A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26983 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：21A（Ta），97A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.1W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103926983 资料：规格书/封装库	10+: ￥3.84 1000+: ￥2.94	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "36251" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd17573q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-39836-2-ND" ["zzsbh"]=> string(11) "CSD17573Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.480000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "1 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "64nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "9000pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.2W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17573" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17573Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36251 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103936251 资料：规格书/封装库	10+: ￥5.20 1000+: ￥3.98	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "48173" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18512q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD18512Q5B" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.889000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(15) "40V N CH MOSFET" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "211A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.6 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "2.2V @ 250µA" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7120pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "139W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18512" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> NULL ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607928623" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18512Q5B复制状态：修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： 40V N CH MOSFET	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48173 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：211A（Tc） Vgs(最大值)：±20V 功率-最大值：139W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103948173 资料：规格书/封装库	10+: ￥5.81 1000+: ￥4.45	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 库存:18K+ 加入购物车
array(74) { ["id"]=> string(5) "28411" ["pdf_add"]=> string(119) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16321q5" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/296%7E4210164%7EDQH%7E8.jpg" ["images_dir"]=> string(28) "./images/1039/CSD17311Q5.jpg" ["ljbh"]=> string(14) "296-24517-2-ND" ["zzsbh"]=> string(10) "CSD16321Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(5) "25000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "6.701950" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 25V 31A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "31A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 25A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "19nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(14) "3100pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.1W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16321" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16321Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 31A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 28411 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：31A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.1W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103928411 资料：规格书/封装库	10+: ￥10.02 1000+: ￥7.67	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(71) { ["id"]=> string(4) "3777" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86356q5d" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(97) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/17/296%3B8VSON-1.05-3.3x3.3%3BDPB%3B8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD86356Q5D" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "6.936020" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "25V POWERBLOCK N CH MOSFET" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(30) "逻辑电平栅极，5V 驱动" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "40A（Ta）" ["bt_id_vgs_rds"]=> string(45) "4.5 毫欧 @ 20A，5V，0.8 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(30) "1.85V @ 250µA，1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(28) "7.9nC @ 4.5V，19.3nC @ 4.5V" ["bt_vds_srdr"]=> string(31) "1.04nF @ 12.5V，2.51nF @ 12.5V" ["gn_zdz"]=> string(11) "12W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "86356D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906646" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： CSD86356Q5D复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： 25V POWERBLOCK N CH MOSFET	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3777 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：逻辑电平栅极，5V 驱动漏源极电压(vdss)：25V 电流-连续漏极(id)：40A（Ta）最大功率值：12W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413777 资料：规格书/封装库	10+: ￥10.53 1000+: ￥8.10	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "36425" ["pdf_add"]=> string(85) "https://rocelec.widen.net/view/pdf/kblb6hepce/csd17303q5.pdf?t.download=true&u=5oefqw" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/5442/MFG_TEXTISCSD86336Q3DT.jpg" ["images_dir"]=> string(32) "./images/1039/IRFHM4234TRPBF.jpg" ["ljbh"]=> string(14) "296-27232-2-ND" ["zzsbh"]=> string(10) "CSD17303Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 32A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "32A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 25A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.6V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "23nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(12) "3420pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17303" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17303Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 32A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36425 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：32A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103936425 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "23501" ["pdf_add"]=> string(114) "https://www.ti.com/lit/ds/symlink/csd16325q5.pdf?ts=1715803192485&ref_url=https%253A%252F%252Fwww.rocelec.com%252F" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(45) "//media.digikey.com/Photos/NoPhoto/pna_zh.jpg" ["images_dir"]=> string(29) "./images/1039/APT80SM120B.jpg" ["ljbh"]=> string(14) "296-24964-6-ND" ["zzsbh"]=> string(10) "CSD16325Q5" ["zddgs"]=> string(1) "1" ["xysl"]=> string(4) "5356" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 25V 5X6 100A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "33A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(19) "2 毫欧 @ 30A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "25nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(14) "4000pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.1W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16325" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16325Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 5X6 100A 8SON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23501 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：33A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.1W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103923501 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22756" ["pdf_add"]=> string(119) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17311q5" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/296%7E4210164%7EDQH%7E8.jpg" ["images_dir"]=> string(28) "./images/1039/CSD17311Q5.jpg" ["ljbh"]=> string(14) "296-27625-2-ND" ["zzsbh"]=> string(10) "CSD17311Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "8.030960" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 32A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "32A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(19) "2 毫欧 @ 30A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.6V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "31nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(12) "4280pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(10) "-55 to 150" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17311" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17311Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 32A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22756 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：32A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.2W（Ta）工作温度：-55 to 150	类别：单通道MOS管丝印：(请登录) 料号：103922756 资料：规格书/封装库	10+: ￥12.01 1000+: ￥9.20	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "37668" ["pdf_add"]=> string(119) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16414q5" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/296%7E4210164%7EDQH%7E8.jpg" ["images_dir"]=> string(28) "./images/1039/CSD17311Q5.jpg" ["ljbh"]=> string(14) "296-24257-2-ND" ["zzsbh"]=> string(10) "CSD16414Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "6.656800" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 25V 34A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "34A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.9 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "21nC @ 4.5V" ["vgs_zdz"]=> string(11) "+16V，-12V" ["bt_vds_srdr"]=> string(14) "3650pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16414" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16414Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 34A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37668 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：34A（Ta），100A（Tc） Vgs(最大值)：+16V，-12V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103937668 资料：规格书/封装库	10+: ￥9.95 1000+: ￥7.62	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(4) "7234" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16570q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "CSD16570Q5B-ND" ["zzsbh"]=> string(11) "CSD16570Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "8.833250" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 25V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.59 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.9V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "250nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "14000pF @ 12V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.2W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16570" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16570Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7234 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10397234 资料：规格书/封装库	10+: ￥13.21 1000+: ￥10.11	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "37844" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17570q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "296-39993-2-ND" ["zzsbh"]=> string(11) "CSD17570Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "8.184970" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.69 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.9V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "121nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "13600pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17570" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17570Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37844 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103937844 资料：规格书/封装库	10+: ￥12.24 1000+: ￥9.37	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "45573" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17573q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "CSD17573Q5BT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "7.751640" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "1 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "64nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "9000pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.2W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17573" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591914" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17573Q5BT复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45573 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103945573 资料：规格书/封装库	10+: ￥11.59 1000+: ￥8.88	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 250个/ 修改个个总额：	供应商: 库存:1K+ 加入购物车
array(74) { ["id"]=> string(5) "46105" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD18510Q5B" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.007000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 40V 300A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "300A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.96 毫欧 @ 32A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11400pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "156W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18510" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607594078" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18510Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 40V 300A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46105 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：300A（Tc） Vgs(最大值)：±20V 功率-最大值：156W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103946105 资料：规格书/封装库	10+: ￥7.49 1000+: ￥5.73	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "48174" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18512q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "CSD18512Q5BT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "9.109480" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 40V 211A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "211A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.6 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "98nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7120pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "139W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18512" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607928624" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18512Q5BT复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 40V 211A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48174 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：211A（Tc） Vgs(最大值)：±20V 功率-最大值：139W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103948174 资料：规格书/封装库	10+: ￥13.62 1000+: ￥10.43	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 250个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "25236" ["pdf_add"]=> string(121) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532nq5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "296-36445-2-ND" ["zzsbh"]=> string(12) "CSD18532NQ5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "8.470790" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 60V 22A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "22A（Ta），100A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(22) "3.4 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "64nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5340pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "18532N" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18532NQ5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 60V 22A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25236 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：22A（Ta），100A（Tc） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103925236 资料：规格书/封装库	10+: ￥12.66 1000+: ￥9.70	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22871" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd17312q5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-27613-2-ND" ["zzsbh"]=> string(10) "CSD17312Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.336000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 38A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "38A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(21) "1.5 毫欧 @ 35A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "36nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(12) "5240pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17312" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17312Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 38A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22871 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：38A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103922871 资料：规格书/封装库	10+: ￥7.98 1000+: ￥6.11	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22913" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd19502q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-37194-2-ND" ["zzsbh"]=> string(11) "CSD19502Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(4) "2500" ["dj"]=> string(8) "5.380000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 80V 100A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(22) "4.1 毫欧 @ 19A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4870pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD19502" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD19502Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 80V 100A 8SON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22913 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：80V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103922913 资料：规格书/封装库	10+: ￥8.04 1000+: ￥6.16	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "37894" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd18540q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-41076-2-ND" ["zzsbh"]=> string(11) "CSD18540Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.468000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 60V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.2 毫欧 @ 28A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "53nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4230pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18540" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18540Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 60V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37894 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103937894 资料：规格书/封装库	10+: ￥8.17 1000+: ￥6.26	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "30330" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd18509q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-41075-2-ND" ["zzsbh"]=> string(11) "CSD18509Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.519000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 40V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.2 毫欧 @ 32A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "195nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "13900pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18509" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18509Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 40V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30330 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103930330 资料：规格书/封装库	10+: ￥8.25 1000+: ￥6.32	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22899" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17556q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "296-35726-2-ND" ["zzsbh"]=> string(11) "CSD17556Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "7.938540" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 34A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "34A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.4 毫欧 @ 40A，10V" ["bt_id_vgs_zdz"]=> string(14) "1.65V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "39nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7020pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），191W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17556" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17556Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 34A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22899 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：34A（Ta），100A（Tc） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），191W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103922899 资料：规格书/封装库	10+: ￥11.87 1000+: ￥9.09	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(74) { ["id"]=> string(5) "26983" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd16322q5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-25112-2-ND" ["zzsbh"]=> string(10) "CSD16322Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "2.566000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 25V 21A/97A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "21A（Ta），97A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(19) "5 毫欧 @ 20A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "9.7nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(14) "1365pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.1W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16322" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16322Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 21A/97A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 26983 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：21A（Ta），97A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.1W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103926983 资料：规格书/封装库	10+: ￥3.84 1000+: ￥2.94	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "36251" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd17573q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-39836-2-ND" ["zzsbh"]=> string(11) "CSD17573Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.480000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "1 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "64nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "9000pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.2W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17573" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17573Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36251 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103936251 资料：规格书/封装库	10+: ￥5.20 1000+: ￥3.98	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "48173" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18512q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD18512Q5B" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.889000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(15) "40V N CH MOSFET" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "211A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.6 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "2.2V @ 250µA" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7120pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "139W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18512" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> NULL ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607928623" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18512Q5B复制状态：修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： 40V N CH MOSFET	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48173 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：211A（Tc） Vgs(最大值)：±20V 功率-最大值：139W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103948173 资料：规格书/封装库	10+: ￥5.81 1000+: ￥4.45	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 库存:18K+ 加入购物车
array(74) { ["id"]=> string(5) "28411" ["pdf_add"]=> string(119) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16321q5" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/296%7E4210164%7EDQH%7E8.jpg" ["images_dir"]=> string(28) "./images/1039/CSD17311Q5.jpg" ["ljbh"]=> string(14) "296-24517-2-ND" ["zzsbh"]=> string(10) "CSD16321Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(5) "25000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "6.701950" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 25V 31A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "31A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 25A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "19nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(14) "3100pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.1W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16321" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16321Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 31A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 28411 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：31A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.1W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103928411 资料：规格书/封装库	10+: ￥10.02 1000+: ￥7.67	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(71) { ["id"]=> string(4) "3777" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86356q5d" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(97) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/17/296%3B8VSON-1.05-3.3x3.3%3BDPB%3B8.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD86356Q5D" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "6.936020" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "25V POWERBLOCK N CH MOSFET" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(26) "2 个 N 通道（半桥）" ["fetgn"]=> string(30) "逻辑电平栅极，5V 驱动" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "40A（Ta）" ["bt_id_vgs_rds"]=> string(45) "4.5 毫欧 @ 20A，5V，0.8 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(30) "1.85V @ 250µA，1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(28) "7.9nC @ 4.5V，19.3nC @ 4.5V" ["bt_vds_srdr"]=> string(31) "1.04nF @ 12.5V，2.51nF @ 12.5V" ["gn_zdz"]=> string(11) "12W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "86356D" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906646" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： CSD86356Q5D复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： 25V POWERBLOCK N CH MOSFET	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3777 ) LIMIT 1 Fet类型：2 个 N 通道（半桥） Fet功能：逻辑电平栅极，5V 驱动漏源极电压(vdss)：25V 电流-连续漏极(id)：40A（Ta）最大功率值：12W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10413777 资料：规格书/封装库	10+: ￥10.53 1000+: ￥8.10	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "36425" ["pdf_add"]=> string(85) "https://rocelec.widen.net/view/pdf/kblb6hepce/csd17303q5.pdf?t.download=true&u=5oefqw" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/5442/MFG_TEXTISCSD86336Q3DT.jpg" ["images_dir"]=> string(32) "./images/1039/IRFHM4234TRPBF.jpg" ["ljbh"]=> string(14) "296-27232-2-ND" ["zzsbh"]=> string(10) "CSD17303Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 32A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "32A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 25A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.6V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "23nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(12) "3420pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17303" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17303Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 32A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 36425 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：32A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103936425 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "23501" ["pdf_add"]=> string(114) "https://www.ti.com/lit/ds/symlink/csd16325q5.pdf?ts=1715803192485&ref_url=https%253A%252F%252Fwww.rocelec.com%252F" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(45) "//media.digikey.com/Photos/NoPhoto/pna_zh.jpg" ["images_dir"]=> string(29) "./images/1039/APT80SM120B.jpg" ["ljbh"]=> string(14) "296-24964-6-ND" ["zzsbh"]=> string(10) "CSD16325Q5" ["zddgs"]=> string(1) "1" ["xysl"]=> string(4) "5356" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 25V 5X6 100A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "33A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(19) "2 毫欧 @ 30A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "25nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(14) "4000pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.1W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16325" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16325Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 5X6 100A 8SON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23501 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：33A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.1W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103923501 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22756" ["pdf_add"]=> string(119) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17311q5" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/296%7E4210164%7EDQH%7E8.jpg" ["images_dir"]=> string(28) "./images/1039/CSD17311Q5.jpg" ["ljbh"]=> string(14) "296-27625-2-ND" ["zzsbh"]=> string(10) "CSD17311Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "8.030960" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 32A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "32A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(19) "2 毫欧 @ 30A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.6V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "31nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(12) "4280pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(10) "-55 to 150" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17311" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17311Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 32A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22756 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：32A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.2W（Ta）工作温度：-55 to 150	类别：单通道MOS管丝印：(请登录) 料号：103922756 资料：规格书/封装库	10+: ￥12.01 1000+: ￥9.20	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "37668" ["pdf_add"]=> string(119) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16414q5" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6310/296%7E4210164%7EDQH%7E8.jpg" ["images_dir"]=> string(28) "./images/1039/CSD17311Q5.jpg" ["ljbh"]=> string(14) "296-24257-2-ND" ["zzsbh"]=> string(10) "CSD16414Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "6.656800" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 25V 34A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "34A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.9 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "21nC @ 4.5V" ["vgs_zdz"]=> string(11) "+16V，-12V" ["bt_vds_srdr"]=> string(14) "3650pF @ 12.5V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16414" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16414Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 34A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37668 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：34A（Ta），100A（Tc） Vgs(最大值)：+16V，-12V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103937668 资料：规格书/封装库	10+: ￥9.95 1000+: ￥7.62	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(4) "7234" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16570q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "CSD16570Q5B-ND" ["zzsbh"]=> string(11) "CSD16570Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "8.833250" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 25V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.59 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.9V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "250nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "14000pF @ 12V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.2W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD16570" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD16570Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 25V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7234 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：25V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10397234 资料：规格书/封装库	10+: ￥13.21 1000+: ￥10.11	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "37844" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17570q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "296-39993-2-ND" ["zzsbh"]=> string(11) "CSD17570Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "8.184970" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.69 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.9V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "121nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "13600pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17570" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17570Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37844 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103937844 资料：规格书/封装库	10+: ￥12.24 1000+: ￥9.37	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "45573" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17573q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "CSD17573Q5BT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "7.751640" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 30V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(20) "1 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(13) "1.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "64nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "9000pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.2W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17573" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607591914" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17573Q5BT复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45573 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103945573 资料：规格书/封装库	10+: ￥11.59 1000+: ￥8.88	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 250个/ 修改个个总额：	供应商: 库存:1K+ 加入购物车
array(74) { ["id"]=> string(5) "46105" ["pdf_add"]=> string(118) "http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "CSD18510Q5B" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.007000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 40V 300A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "300A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "0.96 毫欧 @ 32A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11400pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "156W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18510" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607594078" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18510Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 40V 300A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46105 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：300A（Tc） Vgs(最大值)：±20V 功率-最大值：156W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103946105 资料：规格书/封装库	10+: ￥7.49 1000+: ￥5.73	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "48174" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18512q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "CSD18512Q5BT" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "9.109480" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 40V 211A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "211A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.6 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "98nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7120pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "139W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(3) "250" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18512" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607928624" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18512Q5BT复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 40V 211A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48174 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：211A（Tc） Vgs(最大值)：±20V 功率-最大值：139W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103948174 资料：规格书/封装库	10+: ￥13.62 1000+: ￥10.43	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 250个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "25236" ["pdf_add"]=> string(121) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532nq5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "296-36445-2-ND" ["zzsbh"]=> string(12) "CSD18532NQ5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "8.470790" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 60V 22A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "22A（Ta），100A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(22) "3.4 毫欧 @ 25A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "64nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "5340pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(6) "18532N" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18532NQ5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 60V 22A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25236 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：22A（Ta），100A（Tc） Vgs(最大值)：±20V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103925236 资料：规格书/封装库	10+: ￥12.66 1000+: ￥9.70	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22871" ["pdf_add"]=> string(47) "http://www.ti.com/lit/ds/symlink/csd17312q5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-27613-2-ND" ["zzsbh"]=> string(10) "CSD17312Q5" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.336000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 38A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "38A（Ta），100A（Tc）" ["qddy"]=> string(7) "3V，8V" ["bt_id_vgs_rds"]=> string(21) "1.5 毫欧 @ 35A，8V" ["bt_id_vgs_zdz"]=> string(13) "1.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "36nC @ 4.5V" ["vgs_zdz"]=> string(10) "+10V，-8V" ["bt_vds_srdr"]=> string(12) "5240pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "3.2W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17312" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17312Q5复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 38A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22871 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：38A（Ta），100A（Tc） Vgs(最大值)：+10V，-8V 功率-最大值：3.2W（Ta）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103922871 资料：规格书/封装库	10+: ￥7.98 1000+: ￥6.11	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22913" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd19502q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-37194-2-ND" ["zzsbh"]=> string(11) "CSD19502Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(4) "2500" ["dj"]=> string(8) "5.380000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 80V 100A 8SON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(22) "4.1 毫欧 @ 19A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4870pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD19502" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD19502Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 80V 100A 8SON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22913 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：80V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103922913 资料：规格书/封装库	10+: ￥8.04 1000+: ￥6.16	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "37894" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd18540q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-41076-2-ND" ["zzsbh"]=> string(11) "CSD18540Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.468000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 60V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.2 毫欧 @ 28A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "53nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "4230pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18540" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18540Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 60V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37894 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103937894 资料：规格书/封装库	10+: ￥8.17 1000+: ￥6.26	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "30330" ["pdf_add"]=> string(48) "http://www.ti.com/lit/ds/symlink/csd18509q5b.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Renders/Texas_Instr_Renders/8-Power_TDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "296-41075-2-ND" ["zzsbh"]=> string(11) "CSD18509Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.519000" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 40V 100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "100A（Ta）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.2 毫欧 @ 32A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "195nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "13900pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），195W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD18509" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD18509Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 40V 100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30330 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：100A（Ta） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），195W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103930330 资料：规格书/封装库	10+: ￥8.25 1000+: ￥6.32	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车
array(74) { ["id"]=> string(5) "22899" ["pdf_add"]=> string(120) "https://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17556q5b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Texas%20Instr%20Renders/8-Power%20TDFN.jpg" ["images"]=> string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6184/296%7E8VSON-1.05-5X6%7EDNK%7E8.jpg" ["images_dir"]=> string(29) "./images/1039/CSD16570Q5B.jpg" ["ljbh"]=> string(14) "296-35726-2-ND" ["zzsbh"]=> string(11) "CSD17556Q5B" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(5) "10000" ["dj"]=> string(8) "7.938540" ["gys_id"]=> string(3) "249" ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 30V 34A/100A 8VSON" ["xl"]=> string(9) "NexFET™" ["zzs"]=> string(15) "TI/德州仪器" ["zzs_new"]=> string(15) "TI/德州仪器" ["zzs_old"]=> string(17) "Texas Instruments" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "34A（Ta），100A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "1.4 毫欧 @ 40A，10V" ["bt_id_vgs_zdz"]=> string(14) "1.65V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "39nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7020pF @ 15V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.1W（Ta），191W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(20) "8-VSON-CLIP（5x6）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "2500" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(8) "CSD17556" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： CSD17556Q5B复制状态：在售修改品牌： TI/德州仪器复制封装：8-VSON-CLIP（5x6）外壳：8-PowerTDFN 描述： MOSFET N-CH 30V 34A/100A 8VSON	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22899 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：30V 电流-连续漏极(id)：34A（Ta），100A（Tc） Vgs(最大值)：±20V 功率-最大值：3.1W（Ta），191W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103922899 资料：规格书/封装库	10+: ￥11.87 1000+: ￥9.09	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 2500个/ 修改个个总额：	供应商: 加入购物车

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