array(74) {
["id"]=>
string(5) "12771"
["pdf_add"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/574/IR_PartNumberingSystem.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(15) "IRF6646TR1TR-ND"
["zzsbh"]=>
string(10) "IRF6646TR1"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 80V 12A DIRECTFET"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(25) "12A（Ta），68A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "9.5 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.9V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2060pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 80V 12A DIRECTFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12771 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：12A（Ta），68A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6646TR1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "13648"
["pdf_add"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/574/IR_PartNumberingSystem.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(13) "IRF6648TR1-ND"
["zzsbh"]=>
string(10) "IRF6648TR1"
["zddgs"]=>
string(4) "4800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "13.528350"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 60V 86A DIRECTFET"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "86A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(20) "7 毫欧 @ 17A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.9V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2120pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 60V 86A DIRECTFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13648 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：86A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
10+:
￥20.22
1000+:
￥15.49
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6648TR1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "13799"
["pdf_add"]=>
string(84) "https://www.infineon.com/dgdl/irf6644pbf.pdf?fileId=5546d462533600a4015355ec47ac1a4f"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(18) "IRF6644TR1PBFTR-ND"
["zzsbh"]=>
string(13) "IRF6644TR1PBF"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 100V 10.3A DIRECTFET"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(27) "10.3A（Ta），60A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "13 毫欧 @ 10.3A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.8V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "47nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2210pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 100V 10.3A DIRECTFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13799 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：10.3A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6644TR1PBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "13805"
["pdf_add"]=>
string(84) "https://www.infineon.com/dgdl/irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(18) "IRF6646TR1PBFTR-ND"
["zzsbh"]=>
string(13) "IRF6646TR1PBF"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 80V 12A DIRECTFET"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(25) "12A（Ta），68A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "9.5 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.9V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2060pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 80V 12A DIRECTFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13805 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：12A（Ta），68A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6646TR1PBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "13808"
["pdf_add"]=>
string(84) "https://www.infineon.com/dgdl/irf6648pbf.pdf?fileId=5546d462533600a4015355ec6e561a59"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(18) "IRF6648TR1PBFTR-ND"
["zzsbh"]=>
string(13) "IRF6648TR1PBF"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 60V 86A DIRECTFET"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "86A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(20) "7 毫欧 @ 17A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.9V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2120pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 60V 86A DIRECTFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13808 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：86A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6648TR1PBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "19861"
["pdf_add"]=>
string(71) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1136/IRF6644.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(10) "IRF6644-ND"
["zzsbh"]=>
string(7) "IRF6644"
["zddgs"]=>
string(4) "4800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 100V DIRECTFET-MN"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(27) "10.3A（Ta），60A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "13 毫欧 @ 10.3A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.8V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "47nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2210pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 100V DIRECTFET-MN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19861 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：10.3A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6644' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "19862"
["pdf_add"]=>
string(71) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1136/IRF6644.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(13) "IRF6644TR1-ND"
["zzsbh"]=>
string(10) "IRF6644TR1"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 100V DIRECTFET-MN"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(27) "10.3A（Ta），60A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "13 毫欧 @ 10.3A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.8V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "47nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2210pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 100V DIRECTFET-MN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19862 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：10.3A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6644TR1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "22120"
["pdf_add"]=>
string(95) "https://rocelec.widen.net/view/pdf/m5uc4mm2bo/INFN-S-A0002955525-1.pdf?t.download=true&u=5oefqw"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/5442/MFG_INFIRFAUIRF7647S2TR.jpg"
["images_dir"]=>
string(31) "./images/1039/AUIRF7675M2TR.jpg"
["ljbh"]=>
string(17) "IRF6644TRPBFTR-ND"
["zzsbh"]=>
string(12) "IRF6644TRPBF"
["zddgs"]=>
string(4) "4800"
["xysl"]=>
string(5) "24000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 100V 10.3A DIRECTFET"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(27) "10.3A（Ta），60A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "13 毫欧 @ 10.3A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.8V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "47nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2210pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 100V 10.3A DIRECTFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22120 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：10.3A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6644TRPBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "22133"
["pdf_add"]=>
string(62) "http://www.irf.com/product-info/datasheets/data/irf6648pbf.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(97) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "IRF6648TRPBFTR-ND"
["zzsbh"]=>
string(12) "IRF6648TRPBF"
["zddgs"]=>
string(4) "4800"
["xysl"]=>
string(4) "9600"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 60V 86A DIRECTFET"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "86A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(20) "7 毫欧 @ 17A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.9V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2120pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 60V 86A DIRECTFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22133 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：86A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6648TRPBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "22136"
["pdf_add"]=>
string(84) "https://www.infineon.com/dgdl/irf6646pbf.pdf?fileId=5546d462533600a4015355ec5f071a55"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(17) "IRF6646TRPBFTR-ND"
["zzsbh"]=>
string(12) "IRF6646TRPBF"
["zddgs"]=>
string(4) "4800"
["xysl"]=>
string(4) "4800"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.342150"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 80V 12A DIRECTFET MN"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(25) "12A（Ta），68A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "9.5 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(13) "4.9V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2060pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），89W（Tc）"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "4800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 80V 12A DIRECTFET MN
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22136 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：12A（Ta），68A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），89W（Tc）
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
4800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6646TRPBF' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "33048"
["pdf_add"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/2293/IRF7171MTRPBF.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(79) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6614TR1PBF.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/640/IRF6614TR1PBF.jpg"
["images_dir"]=>
string(25) "./images/1039/IRF6608.jpg"
["ljbh"]=>
string(18) "IRF7171MTRPBFTR-ND"
["zzsbh"]=>
string(13) "IRF7171MTRPBF"
["zddgs"]=>
string(4) "4800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(20) "MOSFET N-CH 100V 15A"
["xl"]=>
string(22) "FASTIRFET™, HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(25) "15A（Ta），93A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "6.5 毫欧 @ 56A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.6V @ 150µA"
["bt_vgs_sjdh"]=>
string(10) "54nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2160pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "2.8W（Ta），104W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(22) "DirectFET™ 等容 MN"
["gysqjfz"]=>
string(15) "DIRECTFET™ MN"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：DIRECTFET™ MN
外壳：DirectFET™ 等容 MN
描述：
MOSFET N-CH 100V 15A
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33048 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：15A（Ta），93A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7171MTRPBF' ) LIMIT 1
|
