首页 >> 所有制造商 >> Infineon/英飞凌

类目:
更多
封装:
清除条件
封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(72) { ["id"]=> string(5) "13814" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6665pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(18) "IRF6665TR1PBFTR-ND" ["zzsbh"]=> string(13) "IRF6665TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 4.2A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "4.2A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "62 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "530pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 SH" ["gysqjfz"]=> string(15) "DIRECTFET™ SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6665TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ SH
外壳：DirectFET™ 等容 SH
描述： MOSFET N-CH 100V 4.2A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13814 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4.2A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103913814
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6665TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "14042" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6655pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(16) "IRF6655TR1PBF-ND" ["zzsbh"]=> string(13) "IRF6655TR1PBF" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 4.2A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "4.2A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "62 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(12) "4.8V @ 25µA" ["bt_vgs_sjdh"]=> string(12) "11.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "530pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 SH" ["gysqjfz"]=> string(15) "DIRECTFET™ SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6655TR1PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ SH
外壳：DirectFET™ 等容 SH
描述： MOSFET N-CH 100V 4.2A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14042 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4.2A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103914042
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6655TR1PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19864" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6655.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(13) "IRF6655TR1-ND" ["zzsbh"]=> string(10) "IRF6655TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V DIRECTFET-SH" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "4.2A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "62 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(12) "4.8V @ 25µA" ["bt_vgs_sjdh"]=> string(12) "11.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "530pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 SH" ["gysqjfz"]=> string(15) "DIRECTFET™ SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6655TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ SH
外壳：DirectFET™ 等容 SH
描述： MOSFET N-CH 100V DIRECTFET-SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19864 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4.2A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103919864
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6655TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "19865" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6665.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(10) "IRF6665-ND" ["zzsbh"]=> string(7) "IRF6665" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V DIRECTFET-SH" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "4.2A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "62 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "530pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 SH" ["gysqjfz"]=> string(15) "DIRECTFET™ SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6665复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ SH
外壳：DirectFET™ 等容 SH
描述： MOSFET N-CH 100V DIRECTFET-SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19865 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4.2A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103919865
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6665' ) LIMIT 1
array(72) { ["id"]=> string(5) "19866" ["pdf_add"]=> string(59) "http://www.irf.com/product-info/datasheets/data/irf6665.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(13) "IRF6665TR1-ND" ["zzsbh"]=> string(10) "IRF6665TR1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V DIRECTFET-SH" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "4.2A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "62 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "530pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 SH" ["gysqjfz"]=> string(15) "DIRECTFET™ SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6665TR1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ SH
外壳：DirectFET™ 等容 SH
描述： MOSFET N-CH 100V DIRECTFET-SH
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19866 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4.2A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103919866
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6665TR1' ) LIMIT 1
array(72) { ["id"]=> string(5) "22767" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6665pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6665TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6665TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(4) "4800" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 4.2A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "4.2A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "62 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "530pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 SH" ["gysqjfz"]=> string(15) "DIRECTFET™ SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6665TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ SH
外壳：DirectFET™ 等容 SH
描述： MOSFET N-CH 100V 4.2A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22767 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4.2A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922767
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6665TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "31990" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf6655pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRF6706S2TR1PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRF6706S2TR1PBF.jpg" ["ljbh"]=> string(17) "IRF6655TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF6655TRPBF" ["zddgs"]=> string(4) "4800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 100V 4.2A DIRECTFET" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "4.2A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "62 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(12) "4.8V @ 25µA" ["bt_vgs_sjdh"]=> string(12) "11.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(11) "530pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.2W（Ta），42W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(22) "DirectFET™ 等容 SH" ["gysqjfz"]=> string(15) "DIRECTFET™ SH" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRF6655TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：DIRECTFET™ SH
外壳：DirectFET™ 等容 SH
描述： MOSFET N-CH 100V 4.2A DIRECTFET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31990 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：4.2A（Ta），19A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.2W（Ta），42W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103931990
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF6655TRPBF' ) LIMIT 1

辰科物联

https://www.chenkeiot.com/

已成功加入购物车！
去购物车结算 继续采购
复制成功

业务介绍

芯片采购
芯片丝印
商品选型
芯片烧录
开发工具
Bom采购
SMT贴片

购物指南

注册登录
找回密码
购物流程
常见问题
支付方式
配送方式

联系我们

直线：0755-28435922
总部地址：广东省深圳市龙岗区坂田上雪村金鹏工业区新一栋5楼
联系我们
公司简介

关注我们

微信扫码
辰科物联介绍

粤公网安备 号

粤ICP备2023141824号-1

Copyright © 2002-2025 深圳市辰科物联有限公司 版权所有

销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922