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array(72) { ["id"]=> string(5) "47891" ["pdf_add"]=> string(59) "https://www.st.com/resource/en/datasheet/scth35n65g2v-7.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "SCTH35N65G2V-7" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "SILICON CARBIDE POWER MOSFET 650" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "45A（Tc）" ["qddy"]=> string(9) "18V，20V" ["bt_id_vgs_rds"]=> string(20) "67毫欧 @ 20A，20V" ["bt_id_vgs_zdz"]=> string(10) "3.2V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "73nC @ 20V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "1370pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "208W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(7) "H2PAK-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607928093" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTH35N65G2V-7复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SILICON CARBIDE POWER MOSFET 650
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47891 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：208W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947891
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH35N65G2V-7' ) LIMIT 1
array(72) { ["id"]=> string(5) "48636" ["pdf_add"]=> string(61) "https://www.st.com/resource/en/datasheet/scth100n65g2-7ag.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SCTH100N65G2-7AG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "95A（Tc）" ["qddy"]=> string(3) "18V" ["bt_id_vgs_rds"]=> string(21) "26 毫欧 @ 50A，18V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 5mA" ["bt_vgs_sjdh"]=> string(11) "162nC @ 18V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "3315pF @ 520V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "360W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(7) "H2PAK-7" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607931260" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTH100N65G2-7AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48636 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：95A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：360W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103948636
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH100N65G2-7AG' ) LIMIT 1
array(72) { ["id"]=> string(5) "50890" ["pdf_add"]=> string(1) "-" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SCTH35N65G2V-7AG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "45A（Tc）" ["qddy"]=> string(9) "18V，20V" ["bt_id_vgs_rds"]=> string(20) "67毫欧 @ 20A，20V" ["bt_id_vgs_zdz"]=> string(10) "3.2V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "73nC @ 20V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "1370pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "208W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(7) "H2PAK-7" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935887" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTH35N65G2V-7AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50890 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：208W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103950890
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH35N65G2V-7AG' ) LIMIT 1
array(72) { ["id"]=> string(5) "50895" ["pdf_add"]=> string(61) "https://www.st.com/resource/en/datasheet/scth35n65g2v-7ag.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "SCTH40N120G2V7AG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE" ["xl"]=> string(20) "Automotive, AEC-Q101" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "33A（Tc）" ["qddy"]=> string(3) "18V" ["bt_id_vgs_rds"]=> string(21) "105毫欧 @ 20A，18V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "63nC @ 18V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "1230pF @ 800V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "250W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(7) "H2PAK-7" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935888" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTH40N120G2V7AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： AUTOMOTIVE-GRADE SILICON CARBIDE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50895 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：33A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：250W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103950895
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH40N120G2V7AG' ) LIMIT 1
array(72) { ["id"]=> string(5) "50910" ["pdf_add"]=> string(59) "https://www.st.com/resource/en/datasheet/scth90n65g2v-7.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(60) "//media.digikey.com/Renders/Rohm%20Renders/Rohm-TO-263-7.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(14) "SCTH90N65G2V-7" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "SILICON CARBIDE POWER MOSFET 650" ["xl"]=> string(1) "-" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "SiCFET（碳化硅）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "90A（Tc）" ["qddy"]=> string(3) "18V" ["bt_id_vgs_rds"]=> string(21) "26 毫欧 @ 50A，18V" ["bt_id_vgs_zdz"]=> string(8) "5V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "157nC @ 18V" ["vgs_zdz"]=> string(11) "+22V，-10V" ["bt_vds_srdr"]=> string(13) "3300pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "330W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(7) "H2PAK-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935900" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： SCTH90N65G2V-7复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SILICON CARBIDE POWER MOSFET 650
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50910 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：90A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：330W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103950910
量大可议价
起订量:10 修改
包装量: 修改
个
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH90N65G2V-7' ) LIMIT 1

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