array(74) {
["id"]=>
string(5) "47891"
["pdf_add"]=>
string(59) "https://www.st.com/resource/en/datasheet/scth35n65g2v-7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7EDM00249216%7E%7E7.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(14) "SCTH35N65G2V-7"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "53.957290"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "SILICON CARBIDE POWER MOSFET 650"
["xl"]=>
string(1) "-"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "SiCFET（碳化硅）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "45A（Tc）"
["qddy"]=>
string(9) "18V，20V"
["bt_id_vgs_rds"]=>
string(20) "67毫欧 @ 20A，20V"
["bt_id_vgs_zdz"]=>
string(10) "3.2V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "73nC @ 20V"
["vgs_zdz"]=>
string(11) "+22V，-10V"
["bt_vds_srdr"]=>
string(13) "1370pF @ 400V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "208W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA"
["gysqjfz"]=>
string(7) "H2PAK-7"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607928093"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述：
SILICON CARBIDE POWER MOSFET 650
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47891 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：208W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥80.67
1000+:
￥61.78
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH35N65G2V-7' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "48636"
["pdf_add"]=>
string(61) "https://www.st.com/resource/en/datasheet/scth100n65g2-7ag.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SCTH100N65G2-7AG"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE"
["xl"]=>
string(20) "Automotive, AEC-Q101"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "SiCFET（碳化硅）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "95A（Tc）"
["qddy"]=>
string(3) "18V"
["bt_id_vgs_rds"]=>
string(21) "26 毫欧 @ 50A，18V"
["bt_id_vgs_zdz"]=>
string(8) "5V @ 5mA"
["bt_vgs_sjdh"]=>
string(11) "162nC @ 18V"
["vgs_zdz"]=>
string(11) "+22V，-10V"
["bt_vds_srdr"]=>
string(13) "3315pF @ 520V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "360W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA"
["gysqjfz"]=>
string(7) "H2PAK-7"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607931260"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述：
AUTOMOTIVE-GRADE SILICON CARBIDE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48636 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：95A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：360W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH100N65G2-7AG' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50890"
["pdf_add"]=>
string(1) "-"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SCTH35N65G2V-7AG"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE"
["xl"]=>
string(20) "Automotive, AEC-Q101"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "SiCFET（碳化硅）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "45A（Tc）"
["qddy"]=>
string(9) "18V，20V"
["bt_id_vgs_rds"]=>
string(20) "67毫欧 @ 20A，20V"
["bt_id_vgs_zdz"]=>
string(10) "3.2V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "73nC @ 20V"
["vgs_zdz"]=>
string(11) "+22V，-10V"
["bt_vds_srdr"]=>
string(13) "1370pF @ 400V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "208W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA"
["gysqjfz"]=>
string(7) "H2PAK-7"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935887"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述：
AUTOMOTIVE-GRADE SILICON CARBIDE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50890 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：45A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：208W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH35N65G2V-7AG' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50895"
["pdf_add"]=>
string(61) "https://www.st.com/resource/en/datasheet/scth40n120g2v7ag.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(88) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7EDM00249216%7E%7E7.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SCTH40N120G2V7AG"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "76.553190"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "AUTOMOTIVE-GRADE SILICON CARBIDE"
["xl"]=>
string(20) "Automotive, AEC-Q101"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "SiCFET（碳化硅）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "33A（Tc）"
["qddy"]=>
string(3) "18V"
["bt_id_vgs_rds"]=>
string(21) "105毫欧 @ 20A，18V"
["bt_id_vgs_zdz"]=>
string(8) "5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "63nC @ 18V"
["vgs_zdz"]=>
string(11) "+22V，-10V"
["bt_vds_srdr"]=>
string(13) "1230pF @ 800V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "250W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA"
["gysqjfz"]=>
string(7) "H2PAK-7"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935888"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述：
AUTOMOTIVE-GRADE SILICON CARBIDE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50895 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：33A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：250W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥114.45
1000+:
￥87.65
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH40N120G2V7AG' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50910"
["pdf_add"]=>
string(59) "https://www.st.com/resource/en/datasheet/scth90n65g2v-7.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/764/Rohm-TO-263-7.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(14) "SCTH90N65G2V-7"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(10) "167.433550"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "SILICON CARBIDE POWER MOSFET 650"
["xl"]=>
string(1) "-"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "SiCFET（碳化硅）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "90A（Tc）"
["qddy"]=>
string(3) "18V"
["bt_id_vgs_rds"]=>
string(21) "26 毫欧 @ 50A，18V"
["bt_id_vgs_zdz"]=>
string(8) "5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "157nC @ 18V"
["vgs_zdz"]=>
string(11) "+22V，-10V"
["bt_vds_srdr"]=>
string(13) "3300pF @ 400V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "330W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA"
["gysqjfz"]=>
string(7) "H2PAK-7"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "1000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935900"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：H2PAK-7
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述：
SILICON CARBIDE POWER MOSFET 650
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50910 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：90A（Tc）
Vgs(最大值)：+22V，-10V
功率-最大值：330W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥250.31
1000+:
￥191.71
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
1000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SCTH90N65G2V-7' ) LIMIT 1
|
