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array(74) { ["id"]=> string(2) "77" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/e2/8d/7f/94/b6/da/4a/b6/DM00072096.pdf/files/DM00072096.pdf/jcr:content/translatio" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Photos/STMicro_Photos/H%C2%B2PAK.JPG" ["images_dir"]=> string(31) "./images/1039/STH310N10F7-2.JPG" ["ljbh"]=> string(14) "497-13585-2-ND" ["zzsbh"]=> string(13) "STH310N10F7-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 180A H2PAK-2" ["xl"]=> string(28) "DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.8V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "180nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "12800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "315W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH310N10F7-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 100V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 77 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：315W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103977
量大可议价
起订量:10 修改
包装量: 修改
个
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH310N10F7-2' ) LIMIT 1
array(74) { ["id"]=> string(4) "6195" ["pdf_add"]=> string(90) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/5334/STx%28x%29130N10F3%28-2%29.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-13091-2-ND" ["zzsbh"]=> string(13) "STH130N10F3-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "13.983410" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 120A H2PAK-2" ["xl"]=> string(15) "STripFET™ III" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "120A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "9.3 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "57nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3305pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "250W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH130N10F3-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 100V 120A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6195 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：120A（Tc）
Vgs(最大值)：±20V
功率-最大值：250W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10396195
10+: ￥20.91
1000+: ￥16.01
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH130N10F3-2' ) LIMIT 1
array(74) { ["id"]=> string(4) "6845" ["pdf_add"]=> string(173) "https://www.st.com/content/ccc/resource/technical/document/user_manual/04/4d/16/0d/d9/49/46/29/DM00064632.pdf/files/DM00064632.pdf/jcr:content/translations/en.DM00064632.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(64) "//media.digikey.com/Renders/STMicro%20Renders/D2Pak%20TO-263.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-16509-2-ND" ["zzsbh"]=> string(14) "STH290N4F6-2AG" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "9.631110" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V 180A H2PAK-2" ["xl"]=> string(33) "Automotive, AEC-Q101, STripFET™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "1.7毫欧 @ 45A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "115nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7380pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH290N4F6-2AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 40V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6845 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10396845
10+: ￥14.40
1000+: ￥11.03
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH290N4F6-2AG' ) LIMIT 1
array(74) { ["id"]=> string(4) "9694" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00036727.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Photos/STMicro_Photos/H%C2%B2PAK.JPG" ["images_dir"]=> string(31) "./images/1039/STH310N10F7-2.JPG" ["ljbh"]=> string(14) "497-15425-2-ND" ["zzsbh"]=> string(13) "STH12N120K5-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 1200V 12A H2PAK-2" ["xl"]=> string(12) "MDmesh™ K5" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "690 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 100µA" ["bt_vgs_sjdh"]=> string(12) "44.2nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1370pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "250W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH12N120K5-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 1200V 12A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9694 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1200V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±30V
功率-最大值：250W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10399694
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH12N120K5-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "20076" ["pdf_add"]=> string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1792/STH140N6F7-2%2C6.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-16314-2-ND" ["zzsbh"]=> string(12) "STH140N6F7-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "10.680570" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 80A H2PAK-2" ["xl"]=> string(28) "DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "80A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "3 毫欧 @ 40A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "40nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2700pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "158W（Tc）" ["gzwd"]=> string(14) "175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH140N6F7-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 60V 80A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20076 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：80A（Tc）
Vgs(最大值)：±20V
功率-最大值：158W（Tc）
工作温度：175°C（TJ）
丝印：(请登录)
料号：103920076
10+: ￥15.97
1000+: ￥12.23
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH140N6F7-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "20201" ["pdf_add"]=> string(172) "https://www.st.com/content/ccc/resource/technical/document/datasheet/de/89/d6/65/97/b9/45/66/DM00175799.pdf/files/DM00175799.pdf/_jcr_content/translations/en.DM00175799.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-16421-2-ND" ["zzsbh"]=> string(14) "STH410N4F7-2AG" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "23.577890" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "MOSFET N-CH 40V H2PAK-2" ["xl"]=> string(36) "Automotive, AEC-Q101, STripFET™ F7" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "200A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "1.1 毫欧 @ 90A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "141nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11500pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "365W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH410N4F7-2AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 40V H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20201 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：200A（Tc）
Vgs(最大值)：±20V
功率-最大值：365W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103920201
10+: ￥35.25
1000+: ￥27.00
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH410N4F7-2AG' ) LIMIT 1
array(74) { ["id"]=> string(5) "20224" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/0a/95/1f/65/db/fd/4b/dd/DM00133320.pdf/files/DM00133320.pdf/jcr:content/translations/en.DM00133320.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-15311-2-ND" ["zzsbh"]=> string(13) "STH185N10F3-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "18.471580" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 180A H2PAK-2" ["xl"]=> string(36) "Automotive, AEC-Q101, STripFET™ F3" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "114.6nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6665pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "315W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH185N10F3-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 100V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20224 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：315W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103920224
10+: ￥27.62
1000+: ￥21.15
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH185N10F3-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "20238" ["pdf_add"]=> string(87) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1106/STH240N75F3-%282%2C6%29.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-13271-2-ND" ["zzsbh"]=> string(13) "STH240N75F3-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N CH 75V 180A H2PAK-2" ["xl"]=> string(15) "STripFET™ III" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "75V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "3 毫欧 @ 90A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "87nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH240N75F3-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N CH 75V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20238 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：75V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103920238
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH240N75F3-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "22194" ["pdf_add"]=> string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00136983.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Photos/STMicro_Photos/H%C2%B2PAK.JPG" ["images_dir"]=> string(31) "./images/1039/STH310N10F7-2.JPG" ["ljbh"]=> string(14) "497-15471-2-ND" ["zzsbh"]=> string(14) "STH265N6F6-2AG" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 180A H2PAK-2" ["xl"]=> string(36) "Automotive, AEC-Q101, STripFET™ F6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.1 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "183nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH265N6F6-2AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 60V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22194 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103922194
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH265N6F6-2AG' ) LIMIT 1
array(74) { ["id"]=> string(5) "22253" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/b0/73/80/6a/2b/2f/48/5f/DM00130458.pdf/files/DM00130458.pdf/jcr:content/translations/en.DM00130458.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-14534-2-ND" ["zzsbh"]=> string(12) "STH140N8F7-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "11.912780" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 80V 90A H2PAK-2" ["xl"]=> string(28) "DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(11) "90A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(20) "4 毫欧 @ 45A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "96nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6340pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "200W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH140N8F7-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 80V 90A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22253 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：90A（Tc）
Vgs(最大值)：±20V
功率-最大值：200W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103922253
10+: ￥17.81
1000+: ￥13.64
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH140N8F7-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "29495" ["pdf_add"]=> string(58) "https://www.st.com/resource/en/datasheet/sth315n10f7-2.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-14718-2-ND" ["zzsbh"]=> string(13) "STH315N10F7-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "20.042750" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 180A H2PAK-2" ["xl"]=> string(50) "Automotive, AEC-Q101, DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.3 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "180nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "12800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "315W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH315N10F7-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 100V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 29495 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：315W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103929495
10+: ￥29.96
1000+: ￥22.95
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH315N10F7-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "30021" ["pdf_add"]=> string(174) "https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/5b/4a/5c/8a/d4/b8/49/94/DM00114742/files/DM00114742.pdf/jcr:content/translations/en.DM00114742.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-15466-2-ND" ["zzsbh"]=> string(13) "STH160N4LF6-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "5.509430" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V 120A H2PAK-2" ["xl"]=> string(27) "DeepGATE™, STripFET™ VI" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "120A（Tc）" ["qddy"]=> string(8) "5V，10V" ["bt_id_vgs_rds"]=> string(22) "2.2 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(23) "1V @ 250µA（最小）" ["bt_vgs_sjdh"]=> string(11) "181nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "8130pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "150W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH160N4LF6-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 40V 120A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30021 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：120A（Tc）
Vgs(最大值)：±20V
功率-最大值：150W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103930021
10+: ￥8.24
1000+: ￥6.31
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH160N4LF6-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "30248" ["pdf_add"]=> string(0) "" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-15468-2-ND" ["zzsbh"]=> string(14) "STH175N4F6-6AG" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V 120A H2PAK-6" ["xl"]=> string(36) "Automotive, AEC-Q101, STripFET™ F6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "120A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.4 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "130nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7735pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "150W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH175N4F6-6AG复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 40V 120A H2PAK-6
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30248 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：120A（Tc）
Vgs(最大值)：±20V
功率-最大值：150W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103930248
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH175N4F6-6AG' ) LIMIT 1
array(74) { ["id"]=> string(5) "30416" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/24/67/2a/67/18/a8/44/0c/DM00156940.pdf/files/DM00156940.pdf/jcr:content/translations/en.DM00156940.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-16316-2-ND" ["zzsbh"]=> string(11) "STH6N95K5-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "9.782020" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(19) "MOSFET N-CH 950V 6A" ["xl"]=> string(12) "MDmesh™ K5" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "950V" ["dl_lxlj"]=> string(10) "6A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "1.25 欧姆 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "450pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "110W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH6N95K5-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 950V 6A
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30416 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：950V
电流-连续漏极(id)：6A（Tc）
Vgs(最大值)：±30V
功率-最大值：110W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103930416
10+: ￥14.62
1000+: ￥11.20
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH6N95K5-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "30482" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/db/3f/5d/23/49/b5/41/95/DM00106219.pdf/files/DM00106219.pdf/jcr:content/translations/en.DM00106219.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-14980-2-ND" ["zzsbh"]=> string(12) "STH80N10F7-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "7.767120" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 100V 80A H2PAK-2" ["xl"]=> string(28) "DeepGATE™, STripFET™ VII" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "80A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "9.5 毫欧 @ 40A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "3100pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "110W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH80N10F7-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 100V 80A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30482 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：80A（Tc）
Vgs(最大值)：±20V
功率-最大值：110W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103930482
10+: ￥11.61
1000+: ￥8.89
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH80N10F7-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "32611" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/c0/bb/6e/12/19/24/43/41/DM00111318.pdf/files/DM00111318.pdf/jcr:content/translations/en.DM00111318.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-15143-2-ND" ["zzsbh"]=> string(13) "STH240N10F7-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "15.316430" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 180A H2PAK-2" ["xl"]=> string(11) "STripFET™" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "160nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11550pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH240N10F7-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 100V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32611 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932611
10+: ￥22.90
1000+: ￥17.54
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH240N10F7-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "32761" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/dc/d0/b3/3e/e5/ff/4e/3b/DM00034472.pdf/files/DM00034472.pdf/jcr:content/translations/en.DM00034472.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-11216-2-ND" ["zzsbh"]=> string(13) "STH180N10F3-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "21.799570" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 100V 120A H2PAK" ["xl"]=> string(15) "STripFET™ III" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "114.6nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "6665pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "315W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH180N10F3-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 100V 120A H2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32761 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：315W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932761
10+: ￥32.59
1000+: ￥24.96
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH180N10F3-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "32818" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/26/bf/ba/7d/76/d7/46/4d/DM00117288.pdf/files/DM00117288.pdf/jcr:content/translations/en.DM00117288.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(64) "//media.digikey.com/Renders/STMicro%20Renders/D2Pak%20TO-263.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-16002-2-ND" ["zzsbh"]=> string(12) "STH170N8F7-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "11.653040" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 80V 120A H2PAK" ["xl"]=> string(14) "STripFET™ F7" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "120A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "3.7 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "120nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "8710pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "250W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH170N8F7-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 80V 120A H2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32818 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：120A（Tc）
Vgs(最大值)：±20V
功率-最大值：250W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932818
10+: ￥17.42
1000+: ￥13.34
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH170N8F7-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "32867" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/c0/89/90/72/c3/fe/4d/0f/DM00027880.pdf/files/DM00027880.pdf/jcr:content/translations/en.DM00027880.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-11217-2-ND" ["zzsbh"]=> string(12) "STH260N6F6-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "15.883620" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 60V 180A H2PAK" ["xl"]=> string(27) "DeepGATE™, STripFET™ VI" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.4 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "183nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH260N6F6-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 60V 180A H2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32867 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932867
10+: ￥23.75
1000+: ￥18.19
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH260N6F6-2' ) LIMIT 1
array(74) { ["id"]=> string(5) "32912" ["pdf_add"]=> string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4819/STH210N75F6-2.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Photos/STMicro%20Photos/H%C2%B2PAK.JPG" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3175/497%7E8159712%7E%7E2.JPG" ["images_dir"]=> string(31) "./images/1039/STH130N10F3-2.JPG" ["ljbh"]=> string(14) "497-11251-2-ND" ["zzsbh"]=> string(13) "STH210N75F6-2" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "25.324780" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 75V 180A H2PAK-2" ["xl"]=> string(27) "DeepGATE™, STripFET™ VI" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "75V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2.8 毫欧 @ 90A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "171nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(7) "H2Pak-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "1000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： STH210N75F6-2复制
状态： 在售 修改
品牌： ST/意法半导体复制
封装：H2Pak-2
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： MOSFET N-CH 75V 180A H2PAK-2
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32912 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：75V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932912
10+: ￥37.86
1000+: ￥29.00
起订量:10 修改
包装量: 1000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH210N75F6-2' ) LIMIT 1

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