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array(68) { ["id"]=> string(4) "7090" ["pdf_add"]=> string(55) "http://www.fairchildsemi.com/datasheets/FJ/FJI5603D.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(67) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/FJI5603DTU.JPG" ["images"]=> string(85) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/FJI5603DTU.JPG" ["ljbh"]=> string(13) "FJI5603DTU-ND" ["zzsbh"]=> string(10) "FJI5603DTU" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "506" ["cfkc"]=> string(4) "3000" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(23) "TRANS NPN 800V 3A I2PAK" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(3) "NPN" ["dl_jdj_ic"]=> string(2) "3A" ["dy_jsjj"]=> string(4) "800V" ["bt_ib"]=> string(17) "2.5V @ 200mA，1A" ["dl_jdjjz_zdz"]=> string(6) "100µA" ["bt_ic"]=> string(15) "20 @ 400mA，3V" ["gl_zdz"]=> string(4) "100W" ["pl_yq"]=> string(4) "5MHz" ["azlx"]=> string(6) "通孔" ["gzwd"]=> string(14) "150°C（TJ）" ["spq"]=> NULL ["moq"]=> string(2) "10" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²PAK，TO-262AA" ["gysqjfz"]=> string(5) "I2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(0) "" ["gl_gnd"]=> string(0) "" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(0) "" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "122" ["wl_num"]=> string(4) "1032" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(18) "golon_jtg_sj_bjt_d" ["ch_bm"]=> string(27) "单路晶体管-双极(BJT)" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_sj_bjt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1032" ["parent_id"]=> string(3) "121" ["lb"]=> string(38) "晶体管 单路晶体管-双极(BJT)" ["action_name"]=> string(4) "jtg1" ["rate"]=> string(5) "1.158" ["rate_hot"]=> string(2) "50" ["moq_rate"]=> string(6) "1.6580" } }
型号： FJI5603DTU复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：I2PAK
外壳：TO-262-3，长引线，I²PAK，TO-262AA
描述： TRANS NPN 800V 3A I2PAK
SELECT * FROM `golon_jtg_sj_bjt_d` WHERE ( `id` = 7090 ) LIMIT 1
晶体管类型：NPN
电流-集电极(ic)(最大值)：3A
电压-集射极击穿(最大值)：800V
电流-集电极截止(最大值)：100µA
不同?ic，vce时的dc电流增益（hfe）（最小值）：20 @ 400mA，3V
功率-最大值：100W
频率-跃迁：5MHz
丝印：(请登录)
料号：10327090
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FJI5603DTU' ) LIMIT 1
array(72) { ["id"]=> string(5) "16649" ["pdf_add"]=> string(77) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB2N80,%20FQI2N80.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(12) "FQI2N80TU-ND" ["zzsbh"]=> string(9) "FQI2N80TU" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 800V 2.4A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "2.4A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "6.3 欧姆 @ 900mA，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "15nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "550pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "3.13W（Ta），85W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²Pak，TO-262AA" ["gysqjfz"]=> string(5) "I2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FQI2N80TU复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：I2PAK
外壳：TO-262-3，长引线，I²Pak，TO-262AA
描述： MOSFET N-CH 800V 2.4A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 16649 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：2.4A（Tc）
Vgs(最大值)：±30V
功率-最大值：3.13W（Ta），85W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103916649
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI2N80TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "16659" ["pdf_add"]=> string(55) "http://www.fairchildsemi.com/datasheets/FQ/FQB27P06.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(13) "FQI27P06TU-ND" ["zzsbh"]=> string(10) "FQI27P06TU" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET P-CH 60V 27A I2PAK" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "27A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "70 毫欧 @ 13.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "43nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "1400pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "3.75W（Ta），120W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²Pak，TO-262AA" ["gysqjfz"]=> string(5) "I2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FQI27P06TU复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：I2PAK
外壳：TO-262-3，长引线，I²Pak，TO-262AA
描述： MOSFET P-CH 60V 27A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 16659 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：27A（Tc）
Vgs(最大值)：±25V
功率-最大值：3.75W（Ta），120W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103916659
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI27P06TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "16703" ["pdf_add"]=> string(79) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/IRFW740B,%20IRFI740B.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(13) "IRFI740BTU-ND" ["zzsbh"]=> string(10) "IRFI740BTU" ["zddgs"]=> string(4) "2000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 400V 10A I2PAK" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "400V" ["dl_lxlj"]=> string(11) "10A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "540 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "53nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "1800pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "3.13W（Ta），134W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²Pak，TO-262AA" ["gysqjfz"]=> string(5) "I2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFI740BTU复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：I2PAK
外壳：TO-262-3，长引线，I²Pak，TO-262AA
描述： MOSFET N-CH 400V 10A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 16703 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：400V
电流-连续漏极(id)：10A（Tc）
Vgs(最大值)：±30V
功率-最大值：3.13W（Ta），134W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103916703
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFI740BTU' ) LIMIT 1
array(72) { ["id"]=> string(5) "16835" ["pdf_add"]=> string(67) "//media.digikey.com/pdf/Data%20Sheets/Fairchild%20PDFs/FQB11N40.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(13) "FQI11N40TU-ND" ["zzsbh"]=> string(10) "FQI11N40TU" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 400V 11.4A I2PAK" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "400V" ["dl_lxlj"]=> string(13) "11.4A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "480 毫欧 @ 5.7A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "35nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "1400pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(28) "3.13W（Ta），147W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²Pak，TO-262AA" ["gysqjfz"]=> string(5) "I2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FQI11N40TU复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：I2PAK
外壳：TO-262-3，长引线，I²Pak，TO-262AA
描述： MOSFET N-CH 400V 11.4A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 16835 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：400V
电流-连续漏极(id)：11.4A（Tc）
Vgs(最大值)：±30V
功率-最大值：3.13W（Ta），147W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103916835
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQI11N40TU' ) LIMIT 1
array(72) { ["id"]=> string(5) "32507" ["pdf_add"]=> string(57) "http://www.fairchildsemi.com/datasheets/FD/FDP045N10A.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(69) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/FDI9406_F085.JPG" ["images"]=> string(87) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/FDI9406_F085.JPG" ["ljbh"]=> string(18) "FDI045N10A_F102-ND" ["zzsbh"]=> string(15) "FDI045N10A_F102" ["zddgs"]=> string(1) "1" ["xysl"]=> string(4) "1913" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 120A I2PAK-3" ["xl"]=> string(13) "PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "120A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "4.5 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "74nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "5270pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "263W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²PAK，TO-262AA" ["gysqjfz"]=> string(5) "I2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FDI045N10A_F102复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：I2PAK
外壳：TO-262-3，长引线，I²PAK，TO-262AA
描述： MOSFET N-CH 100V 120A I2PAK-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32507 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：100V
电流-连续漏极(id)：120A（Tc）
Vgs(最大值)：
功率-最大值：263W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103932507
量大可议价
起订量:10 修改
包装量: 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDI045N10A_F102' ) LIMIT 1
array(72) { ["id"]=> string(5) "32851" ["pdf_add"]=> string(56) "http://www.fairchildsemi.com/datasheets/FC/FCI25N60N.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(80) "//media.digikey.com/Photos/Fairchild%20Semi%20Photos/TO-262-3%20Long%20Leads.JPG" ["images"]=> string(94) "https://www.chenkeiot.com/Public/imagesmk/Photos/Fairchild_Semi_Photos/TO-262-3_Long_Leads.JPG" ["ljbh"]=> string(17) "FCI25N60N_F102-ND" ["zzsbh"]=> string(14) "FCI25N60N_F102" ["zddgs"]=> string(1) "1" ["xysl"]=> string(3) "820" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 600V 25A I2PAK" ["xl"]=> string(13) "SupreMOS™" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "25A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(24) "125 毫欧 @ 12.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "74nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "3352pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "216W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(6) "通孔" ["fz_wk"]=> string(40) "TO-262-3，长引线，I²PAK，TO-262AA" ["gysqjfz"]=> string(5) "I2PAK" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "管件" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FCI25N60N_F102复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：I2PAK
外壳：TO-262-3，长引线，I²PAK，TO-262AA
描述： MOSFET N-CH 600V 25A I2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32851 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：600V
电流-连续漏极(id)：25A（Tc）
Vgs(最大值)：
功率-最大值：216W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932851
量大可议价
起订量:10 修改
包装量: 管件 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FCI25N60N_F102' ) LIMIT 1

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