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array(72) { ["id"]=> string(4) "2901" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/BSC159N10LSF+Rev2.07.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b499f85d47b36" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(23) "BSC159N10LSFGATMA1CT-ND" ["zzsbh"]=> string(14) "BSC159N10LSF G" ["zddgs"]=> string(1) "1" ["xysl"]=> string(2) "11" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 100V 63A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(26) "9.4A（Ta），63A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "15.9 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 72µA" ["bt_vgs_sjdh"]=> string(10) "35nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2500pF @ 50V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(4) "114W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(17) "剪切带（CT）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC159N10LSF G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 100V 63A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2901 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：100V
电流-连续漏极(id)：9.4A（Ta），63A（Tc）
Vgs(最大值)：
功率-最大值：114W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10392901
量大可议价
起订量:10 修改
包装量: 剪切带（CT） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC159N10LSF G' ) LIMIT 1
array(72) { ["id"]=> string(4) "9917" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/BSC050NE2LS_Rev+2.1_.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb5ce0cb3f2d" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC050NE2LSTR-ND" ["zzsbh"]=> string(11) "BSC050NE2LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 25V 39A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(25) "39A（Ta），58A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "5 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "10.4nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "760pF @ 12V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "28W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC050NE2LS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 25V 39A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9917 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：25V
电流-连续漏极(id)：39A（Ta），58A（Tc）
Vgs(最大值)：
功率-最大值：28W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10399917
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC050NE2LS' ) LIMIT 1
array(72) { ["id"]=> string(4) "9992" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSC011N03LS_Rev+1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbb2c20ff02a0" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC011N03LSTR-ND" ["zzsbh"]=> string(11) "BSC011N03LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 30V 100A 8TDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "37A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.1 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "72nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "4700pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "96W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC011N03LS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 100A 8TDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9992 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：37A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：96W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10399992
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC011N03LS' ) LIMIT 1
array(72) { ["id"]=> string(4) "9995" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC039N06NSTR-ND" ["zzsbh"]=> string(11) "BSC039N06NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 19A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "19A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "3.9 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.8V @ 36µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2000pF @ 30V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC039N06NS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 60V 19A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9995 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：19A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10399995
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC039N06NS' ) LIMIT 1
array(72) { ["id"]=> string(5) "22020" ["pdf_add"]=> string(136) "http://www.infineon.com/dgdl/BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSC320N20NS3 GTR-ND" ["zzsbh"]=> string(14) "BSC320N20NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "30000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 200V 36A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(11) "36A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "32 毫欧 @ 36A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 90µA" ["bt_vgs_sjdh"]=> string(10) "29nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "2350pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "125W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC320N20NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 200V 36A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22020 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：200V
电流-连续漏极(id)：36A（Tc）
Vgs(最大值)：
功率-最大值：125W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922020
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC320N20NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22087" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC014N06NSTR-ND" ["zzsbh"]=> string(11) "BSC014N06NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 30A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "30A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "1.45 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 120µA" ["bt_vgs_sjdh"]=> string(10) "89nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "6500pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC014N06NS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 60V 30A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22087 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：30A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922087
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC014N06NS' ) LIMIT 1
array(72) { ["id"]=> string(5) "22531" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSC009NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304332d040720132dd4232240e1d" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC009NE2LSTR-ND" ["zzsbh"]=> string(11) "BSC009NE2LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 25V 41A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "41A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "0.9 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "126nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "5800pF @ 12V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "96W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> NULL ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC009NE2LS复制
状态： 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 25V 41A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22531 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：25V
电流-连续漏极(id)：41A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：96W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922531
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC009NE2LS' ) LIMIT 1
供应商:
库存:10K+
array(72) { ["id"]=> string(5) "22535" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSC900N20NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b144f6b0619db" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSC900N20NS3GTR-ND" ["zzsbh"]=> string(14) "BSC900N20NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 200V 15.2A 8TDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(13) "15.2A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "90 毫欧 @ 7.6A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 30µA" ["bt_vgs_sjdh"]=> string(12) "11.6nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "920pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "62.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC900N20NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 200V 15.2A 8TDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22535 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：200V
电流-连续漏极(id)：15.2A（Tc）
Vgs(最大值)：
功率-最大值：62.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922535
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC900N20NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22550" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSC030P03NS3+G_2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d90d084910435" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSC030P03NS3 GTR-ND" ["zzsbh"]=> string(14) "BSC030P03NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 100A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET P 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(28) "25.4A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "3 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.1V @ 345µA" ["bt_vgs_sjdh"]=> string(11) "186nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "14000pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC030P03NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET P-CH 30V 100A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22550 ) LIMIT 1
Fet类型：MOSFET P 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：25.4A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922550
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC030P03NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22595" ["pdf_add"]=> string(136) "http://www.infineon.com/dgdl/BSC080P03LS+G_Rev1.03.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304314dca38901154a7800621a6c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSC080P03LS GTR-ND" ["zzsbh"]=> string(13) "BSC080P03LS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET P-CH 30V 30A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET P 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "16A（Ta），30A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "8 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(13) "122.4nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "6140pF @ 15V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(3) "89W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC080P03LS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET P-CH 30V 30A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22595 ) LIMIT 1
Fet类型：MOSFET P 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），30A（Tc）
Vgs(最大值)：
功率-最大值：89W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922595
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC080P03LS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22690" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC028N06NSTR-ND" ["zzsbh"]=> string(11) "BSC028N06NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "25000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 23A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "23A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "2.8 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.8V @ 50µA" ["bt_vgs_sjdh"]=> string(10) "37nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2700pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> NULL ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC028N06NS复制
状态： 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 60V 23A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22690 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：23A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922690
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC028N06NS' ) LIMIT 1
供应商:
库存:43K+
array(72) { ["id"]=> string(5) "22759" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/BSC017N04NSG_rev1.24.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe5d5a60236" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSC017N04NS GTR-ND" ["zzsbh"]=> string(13) "BSC017N04NS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V 100A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(26) "30A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.7 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 85µA" ["bt_vgs_sjdh"]=> string(11) "108nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "8800pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "139W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC017N04NS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 40V 100A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22759 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：40V
电流-连续漏极(id)：30A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：139W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922759
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC017N04NS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22794" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSC016N04LSG_rev1.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe284830226" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSC016N04LS GTR-ND" ["zzsbh"]=> string(13) "BSC016N04LS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "35000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 40V 100A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(26) "31A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.6 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 85µA" ["bt_vgs_sjdh"]=> string(11) "150nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "12000pF @ 20V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(4) "139W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC016N04LS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 40V 100A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22794 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：40V
电流-连续漏极(id)：31A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：139W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922794
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC016N04LS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22825" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC016N06NSTR-ND" ["zzsbh"]=> string(11) "BSC016N06NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 30A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "30A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.6 毫欧 @ 50A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.8V @ 95µA" ["bt_vgs_sjdh"]=> string(10) "71nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "5200pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "139W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC016N06NS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 60V 30A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22825 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：30A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：139W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103922825
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC016N06NS' ) LIMIT 1
array(72) { ["id"]=> string(5) "23259" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSC024NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012ca76f4fe52f6b" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(16) "BSC024NE2LSTR-ND" ["zzsbh"]=> string(11) "BSC024NE2LS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 25V 25A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(26) "25A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "2.4 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "23nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1700pF @ 12V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "48W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC024NE2LS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 25V 25A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23259 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：25V
电流-连续漏极(id)：25A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：48W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103923259
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC024NE2LS' ) LIMIT 1
array(72) { ["id"]=> string(5) "23337" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSC0902NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308ea027703424" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(15) "BSC0902NSITR-ND" ["zzsbh"]=> string(10) "BSC0902NSI" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 30V 100A 8TDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "23A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "2.8 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(9) "2V @ 10mA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1500pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "48W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC0902NSI复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 100A 8TDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23337 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：23A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：48W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103923337
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0902NSI' ) LIMIT 1
array(72) { ["id"]=> string(5) "23361" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(14) "BSC0901NSTR-ND" ["zzsbh"]=> string(9) "BSC0901NS" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 30V 100A 8TDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "28A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.9 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "44nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2800pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "69W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC0901NS复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 100A 8TDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23361 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：28A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：69W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103923361
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0901NS' ) LIMIT 1
array(72) { ["id"]=> string(5) "24035" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "BSC22DN20NS3 GTR-ND" ["zzsbh"]=> string(14) "BSC22DN20NS3 G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET N-CH 200V 7A 8TDSON" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "225 毫欧 @ 3.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 13µA" ["bt_vgs_sjdh"]=> string(11) "5.6nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "430pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "34W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC22DN20NS3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 200V 7A 8TDSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24035 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：200V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：
功率-最大值：34W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924035
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC22DN20NS3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "24257" ["pdf_add"]=> string(134) "http://www.infineon.com/dgdl/BSC014N03MSG_rev1.2.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304319c6f18c011a38f5a96704e8" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "BSC014N03MS GTR-ND" ["zzsbh"]=> string(13) "BSC014N03MS G" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 100A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "30A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.4 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "173nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "13000pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "139W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC014N03MS G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 100A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24257 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：30A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：139W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924257
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC014N03MS G' ) LIMIT 1
array(72) { ["id"]=> string(5) "24263" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/BSC011N03LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013097dfdcc22f66" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(17) "BSC011N03LSITR-ND" ["zzsbh"]=> string(12) "BSC011N03LSI" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 30V 37A TDSON-8" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(26) "37A（Ta），100A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.1 毫欧 @ 30A，10V" ["bt_id_vgs_zdz"]=> string(11) "2V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "68nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "4300pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(3) "96W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(11) "8-POWERTDFN" ["gysqjfz"]=> string(10) "PG-TDSON-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> NULL ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： BSC011N03LSI复制
状态： 修改
品牌： Infineon/英飞凌复制
封装：PG-TDSON-8
外壳：8-POWERTDFN
描述： MOSFET N-CH 30V 37A TDSON-8
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24263 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：37A（Ta），100A（Tc）
Vgs(最大值)：
功率-最大值：96W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924263
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC011N03LSI' ) LIMIT 1
供应商:
库存:10K+

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