array(74) {
["id"]=>
string(3) "761"
["pdf_add"]=>
string(133) "https://www.infineon.com/dgdl/BSC0906NS_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f0130986c816b2f8c"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(19) "BSC0906NSATMA1TR-ND"
["zzsbh"]=>
string(14) "BSC0906NSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.497760"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 18A 8TDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "18A（Ta），63A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.5 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "13nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "870pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），30W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 18A 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 761 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），63A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），30W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0906NSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "836"
["pdf_add"]=>
string(134) "http://www.infineon.com/dgdl/BSC032NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed8c328633851"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(21) "BSC032NE2LSATMA1TR-ND"
["zzsbh"]=>
string(16) "BSC032NE2LSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 25V 22A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(25) "22A（Ta），84A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.2 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "16nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1200pF @ 12V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），78W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 25V 22A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 836 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：22A（Ta），84A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），78W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC032NE2LSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "874"
["pdf_add"]=>
string(105) "http://www.infineon.com/dgdl/Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "BSC0504NSIATMA1-ND"
["zzsbh"]=>
string(15) "BSC0504NSIATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 30V 21A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "21A（Ta），72A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.7 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "15nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "960pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），30W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 21A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 874 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：21A（Ta），72A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），30W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0504NSIATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "926"
["pdf_add"]=>
string(106) "https://www.infineon.com/dgdl/Infineon-BSC0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f026ba60b3c73"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(18) "BSC0503NSIATMA1-ND"
["zzsbh"]=>
string(15) "BSC0503NSIATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.046350"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 30V 22A/88A 8TDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "22A（Ta），88A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "3 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "20nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1300pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），36W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 22A/88A 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 926 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta），88A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），36W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0503NSIATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "978"
["pdf_add"]=>
string(107) "https://www.infineon.com/dgdl/Infineon-BSC032N04LS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424bc4f341701d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(19) "BSC032N04LSATMA1-ND"
["zzsbh"]=>
string(16) "BSC032N04LSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.771840"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 40V 21A 8TDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(25) "21A（Ta），98A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.2 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "25nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1800pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 21A 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 978 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：21A（Ta），98A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC032N04LSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "980"
["pdf_add"]=>
string(106) "https://www.infineon.com/dgdl/Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(18) "BSC0502NSIATMA1-ND"
["zzsbh"]=>
string(15) "BSC0502NSIATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.161090"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 30V 26A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(26) "26A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.3 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1600pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），43W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 26A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 980 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：26A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），43W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0502NSIATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1000"
["pdf_add"]=>
string(106) "http://www.infineon.com/dgdl/Infineon-BSC066N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424c7d40ef70ec"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "BSC066N06NSATMA1-ND"
["zzsbh"]=>
string(16) "BSC066N06NSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 60V 64A 8TDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "64A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.6 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.3V @ 20µA"
["bt_vgs_sjdh"]=>
string(10) "21nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1500pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），46W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 60V 64A 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1000 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：64A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），46W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC066N06NSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2559"
["pdf_add"]=>
string(106) "https://www.infineon.com/dgdl/Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(18) "BSC0501NSIATMA1-ND"
["zzsbh"]=>
string(15) "BSC0501NSIATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.597150"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 30V 29A 8TDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(26) "29A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.9 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "33nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2200pF @ 15V"
["fetgn"]=>
string(27) "肖特基二极管（体）"
["gn_zdz"]=>
string(26) "2.5W（Ta），50W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 29A 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2559 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：29A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），50W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0501NSIATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2576"
["pdf_add"]=>
string(106) "http://www.infineon.com/dgdl/Infineon-BSC026N04LS-DS-v02_00-en.pdf?fileId=db3a3043410d6ee40141127f49e92b5d"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "BSC026N04LSATMA1-ND"
["zzsbh"]=>
string(16) "BSC026N04LSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 40V 23A 8TDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(26) "23A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.6 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "32nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2300pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），63W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 23A 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2576 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：23A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），63W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC026N04LSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2672"
["pdf_add"]=>
string(108) "http://www.infineon.com/dgdl/Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(21) "BSC015NE2LS5IATMA1-ND"
["zzsbh"]=>
string(18) "BSC015NE2LS5IATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 25V 33A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "25V"
["dl_lxlj"]=>
string(26) "33A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.5 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "30nC @ 10V"
["vgs_zdz"]=>
string(5) "±16V"
["bt_vds_srdr"]=>
string(12) "2000pF @ 12V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），50W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 25V 33A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2672 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：25V
电流-连续漏极(id)：33A（Ta），100A（Tc）
Vgs(最大值)：±16V
功率-最大值：2.5W（Ta），50W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC015NE2LS5IATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2830"
["pdf_add"]=>
string(106) "https://www.infineon.com/dgdl/Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(18) "BSC0500NSIATMA1-ND"
["zzsbh"]=>
string(15) "BSC0500NSIATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.496440"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 30V 35A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(26) "35A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.3 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "52nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3300pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），69W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 35A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2830 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：35A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0500NSIATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "3645"
["pdf_add"]=>
string(107) "http://www.infineon.com/dgdl/Infineon-BSC026N08NS5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014ae2eace7629e0"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "BSC026N08NS5ATMA1-ND"
["zzsbh"]=>
string(17) "BSC026N08NS5ATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 80V 23A 8TDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(26) "23A（Ta），100A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.6 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.8V @ 115µA"
["bt_vgs_sjdh"]=>
string(10) "92nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "6800pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "2.5W（Ta），156W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 80V 23A 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3645 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：23A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC026N08NS5ATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "13834"
["pdf_add"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1087/BSC052N03S_G.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(15) "BSC052N03S G-ND"
["zzsbh"]=>
string(12) "BSC052N03S G"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 30V 80A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "18A（Ta），80A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.2 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2V @ 40µA"
["bt_vgs_sjdh"]=>
string(9) "22nC @ 5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2820pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.8W（Ta），54W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 80A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 13834 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），80A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），54W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC052N03S G' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "31547"
["pdf_add"]=>
string(134) "https://www.infineon.com/dgdl/BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(21) "BSC022N04LSATMA1TR-ND"
["zzsbh"]=>
string(16) "BSC022N04LSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 100A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.2 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "37nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2600pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），69W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 100A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31547 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC022N04LSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32315"
["pdf_add"]=>
string(106) "http://www.infineon.com/dgdl/Infineon-BSC097N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cdd69b87155"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(21) "BSC097N06NSATMA1TR-ND"
["zzsbh"]=>
string(16) "BSC097N06NSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 60V 46A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "46A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "9.7 毫欧 @ 40A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.3V @ 14µA"
["bt_vgs_sjdh"]=>
string(10) "15nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1075pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），36W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 60V 46A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32315 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：46A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），36W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC097N06NSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46506"
["pdf_add"]=>
string(115) "https://www.infineon.com/dgdl/Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(61) "//media.digikey.com/Photos/Infineon%20Photos/MFG_IRFH8307.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "ISC045N03L5SATMA1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "30V SINGLE N-CHANNEL POWER MOSFE"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "18A（Ta），63A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.5 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "13nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "870pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），30W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607649776"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
30V SINGLE N-CHANNEL POWER MOSFE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46506 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），63A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），30W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'ISC045N03L5SATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46527"
["pdf_add"]=>
string(116) "https://www.infineon.com/dgdl/Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(18) "ISC037N03L5ISATMA1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.531640"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "30V SINGLE N-CHANNEL POWER MOSFE"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "20A（Ta），78A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.7 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），37W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607649875"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
30V SINGLE N-CHANNEL POWER MOSFE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46527 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Ta），78A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），37W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'ISC037N03L5ISATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46588"
["pdf_add"]=>
string(112) "https://www.infineon.com/dgdl/Infineon-BSC0704LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086fbbc2b1d32"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(14) "BSC0704LSATMA1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(16) "TRENCH 40<-<100V"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(25) "11A（Ta），47A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "9.4 毫欧 @ 24A，10V"
["bt_id_vgs_zdz"]=>
string(12) "2.3V @ 14µA"
["bt_vgs_sjdh"]=>
string(12) "9.4nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1300pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），36W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607650159"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
TRENCH 40<-<100V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46588 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：11A（Ta），47A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），36W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC0704LSATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46601"
["pdf_add"]=>
string(115) "https://www.infineon.com/dgdl/Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(91) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6169/448%7EPPG-TDSON-8-7%7E%7E8.jpg"
["images_dir"]=>
string(32) "./images/1039/BSC0906NSATMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "ISC026N03L5SATMA1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.174930"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "30V SINGLE N-CHANNEL POWER MOSFE"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(26) "24A（Ta），100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.6 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1700pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），48W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607650203"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
30V SINGLE N-CHANNEL POWER MOSFE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46601 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：24A（Ta），100A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'ISC026N03L5SATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46606"
["pdf_add"]=>
string(135) "https://www.infineon.com/dgdl/BSC052N03LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc1084350363"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "BSC052N03LSATMA1"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 30V 17A TDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "17A（Ta），57A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.2 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "12nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "770pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.5W（Ta），28W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(12) "PG-TDSON-8-6"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607650219"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TDSON-8-6
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 17A TDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46606 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：17A（Ta），57A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），28W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSC052N03LSATMA1' ) LIMIT 1
|
