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array(72) { ["id"]=> string(4) "3011" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(19) "IPB015N08N5ATMA1-ND" ["zzsbh"]=> string(16) "IPB015N08N5ATMA1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 80V 120A TO263-3" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(23) "1.5 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.8V @ 279µA" ["bt_vgs_sjdh"]=> string(11) "222nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "16900pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "375W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(40) "TO-263-7，D²Pak（6 引线 + 接片）" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "热销" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB015N08N5ATMA1复制
状态： 热销 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述： MOSFET N-CH 80V 120A TO263-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3011 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：375W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10393011
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB015N08N5ATMA1' ) LIMIT 1
供应商:
库存:6K+
array(72) { ["id"]=> string(4) "3743" ["pdf_add"]=> string(136) "http://www.infineon.com/dgdl/IPB039N10N3+G_Rev2.03.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(27) "IPB039N10N3GE8187ATMA1TR-ND" ["zzsbh"]=> string(22) "IPB039N10N3GE8187ATMA1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 160A TO263-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(23) "3.9 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 160µA" ["bt_vgs_sjdh"]=> string(11) "117nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "8410pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "214W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-7，D²Pak（6 引线 + 接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB039N10N3GE8187ATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片），TO-263CB
描述： MOSFET N-CH 100V 160A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 3743 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：±20V
功率-最大值：214W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：10393743
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB039N10N3GE8187ATMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "19760" ["pdf_add"]=> string(71) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/IPB034N06N3_G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(22) "IPB034N06N3GATMA1TR-ND" ["zzsbh"]=> string(17) "IPB034N06N3GATMA1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 100A TO263-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "100A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "3.4 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 93µA" ["bt_vgs_sjdh"]=> string(11) "130nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11000pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "167W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-7，D²Pak（6 引线 + 接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB034N06N3GATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片），TO-263CB
描述： MOSFET N-CH 60V 100A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19760 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±20V
功率-最大值：167W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103919760
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB034N06N3GATMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "21525" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB065N15N3 GTR-ND" ["zzsbh"]=> string(13) "IPB065N15N3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 150V 130A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(12) "130A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "6.5 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 270µA" ["bt_vgs_sjdh"]=> string(10) "93nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "7300pF @ 75V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "300W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB065N15N3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 150V 130A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 21525 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：150V
电流-连续漏极(id)：130A（Tc）
Vgs(最大值)：
功率-最大值：300W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103921525
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB065N15N3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22245" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/IPB016N06L3_Rev2.1.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e261543e54693" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB016N06L3 GTR-ND" ["zzsbh"]=> string(13) "IPB016N06L3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 180A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "1.6 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.2V @ 196µA" ["bt_vgs_sjdh"]=> string(12) "166nC @ 4.5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "28000pF @ 30V" ["fetgn"]=> string(15) "逻辑电平门" ["gn_zdz"]=> string(4) "250W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB016N06L3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 60V 180A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22245 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：
功率-最大值：250W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103922245
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB016N06L3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22369" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/IPB019N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae87fdf90569f" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB019N08N3 GTR-ND" ["zzsbh"]=> string(13) "IPB019N08N3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(5) "12000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 80V 180A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "1.9 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 270µA" ["bt_vgs_sjdh"]=> string(11) "206nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "14200pF @ 40V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "300W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB019N08N3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 80V 180A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22369 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：80V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：
功率-最大值：300W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103922369
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB019N08N3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22436" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/IPB025N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ab1d9d51349" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB025N10N3 GTR-ND" ["zzsbh"]=> string(13) "IPB025N10N3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(5) "19000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 180A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "2.5 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 275µA" ["bt_vgs_sjdh"]=> string(11) "206nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "14800pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "300W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB025N10N3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 100V 180A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22436 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：100V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：
功率-最大值：300W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103922436
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB025N10N3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22459" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB036N12N3 GTR-ND" ["zzsbh"]=> string(13) "IPB036N12N3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "4000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 120V 180A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "120V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "3.6 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 270µA" ["bt_vgs_sjdh"]=> string(11) "211nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "13800pF @ 60V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "300W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB036N12N3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 120V 180A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22459 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：120V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：
功率-最大值：300W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103922459
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB036N12N3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "22498" ["pdf_add"]=> string(132) "http://www.infineon.com/dgdl/IPB010N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc1601355341f17a485f" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(15) "IPB010N06NTR-ND" ["zzsbh"]=> string(10) "IPB010N06N" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(5) "10000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 45A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "45A（Ta），180A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "1 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 280µA" ["bt_vgs_sjdh"]=> string(11) "208nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "15000pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "300W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB010N06N复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 60V 45A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 22498 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：45A（Ta），180A（Tc）
Vgs(最大值)：
功率-最大值：300W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103922498
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB010N06N' ) LIMIT 1
array(72) { ["id"]=> string(5) "23716" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/IPB030N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae88a47a856b1" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB030N08N3 GTR-ND" ["zzsbh"]=> string(13) "IPB030N08N3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(5) "13000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 80V 160A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "3 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 155µA" ["bt_vgs_sjdh"]=> string(11) "117nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "8110pF @ 40V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "214W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB030N08N3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 80V 160A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23716 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：80V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：
功率-最大值：214W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103923716
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB030N08N3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "23748" ["pdf_add"]=> string(132) "http://www.infineon.com/dgdl/IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(15) "IPB014N06NTR-ND" ["zzsbh"]=> string(10) "IPB014N06N" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET N-CH 60V 34A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(26) "34A（Ta），180A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "1.4 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.8V @ 143µA" ["bt_vgs_sjdh"]=> string(11) "106nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "7800pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(2) "3W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB014N06N复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 60V 34A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23748 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：34A（Ta），180A（Tc）
Vgs(最大值)：
功率-最大值：3W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103923748
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB014N06N' ) LIMIT 1
array(72) { ["id"]=> string(5) "23809" ["pdf_add"]=> string(133) "http://www.infineon.com/dgdl/IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB017N06N3 GTR-ND" ["zzsbh"]=> string(13) "IPB017N06N3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 180A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "1.7 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 196µA" ["bt_vgs_sjdh"]=> string(11) "275nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "23000pF @ 30V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "250W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB017N06N3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 60V 180A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23809 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：60V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：
功率-最大值：250W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103923809
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB017N06N3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "31891" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/IPB039N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(18) "IPB039N10N3 GTR-ND" ["zzsbh"]=> string(13) "IPB039N10N3 G" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(4) "1000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 160A TO263-7" ["xl"]=> string(12) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "3.9 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 160µA" ["bt_vgs_sjdh"]=> string(11) "117nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "8410pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "214W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-7，D²PAK（6 引线+接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB039N10N3 G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²PAK（6 引线+接片），TO-263CB
描述： MOSFET N-CH 100V 160A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31891 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：100V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：
功率-最大值：214W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103931891
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB039N10N3 G' ) LIMIT 1
array(72) { ["id"]=> string(5) "33181" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPB017N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac4a981111eed" ["images_sw"]=> string(1) " " ["images_mk"]=> string(70) "//media.digikey.com/Renders/Infineon%20Renders/448;P_PG-TO263-7;;7.jpg" ["images"]=> string(90) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/448;P_PG-TO263-7;;7.jpg" ["ljbh"]=> string(21) "IPB017N10N5ATMA1TR-ND" ["zzsbh"]=> string(16) "IPB017N10N5ATMA1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 100V 180A D2PAK-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(23) "1.7 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.8V @ 279µA" ["bt_vgs_sjdh"]=> string(11) "210nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "15600pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "375W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(40) "TO-263-7，D²Pak（6 引线 + 接片）" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB017N10N5ATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述： MOSFET N-CH 100V 180A D2PAK-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 33181 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：375W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103933181
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB017N10N5ATMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "40146" ["pdf_add"]=> string(71) "//media.digikey.com/pdf/Data%20Sheets/Infineon%20PDFs/IPB023N06N3_G.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(22) "IPB023N06N3GATMA1TR-ND" ["zzsbh"]=> string(17) "IPB023N06N3GATMA1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 140A TO263-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "140A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "2.3 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 141µA" ["bt_vgs_sjdh"]=> string(11) "198nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "16000pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "214W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(40) "TO-263-7，D²Pak（6 引线 + 接片）" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB023N06N3GATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述： MOSFET N-CH 60V 140A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 40146 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：140A（Tc）
Vgs(最大值)：±20V
功率-最大值：214W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103940146
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB023N06N3GATMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "40161" ["pdf_add"]=> string(135) "http://www.infineon.com/dgdl/IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Infineon_Photos/TO-263-7,_D2Pak.jpg" ["ljbh"]=> string(27) "IPB065N15N3GE8187ATMA1TR-ND" ["zzsbh"]=> string(22) "IPB065N15N3GE8187ATMA1" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 150V 130A TO263-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(12) "130A（Tc）" ["qddy"]=> string(8) "8V，10V" ["bt_id_vgs_rds"]=> string(23) "6.5 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 270µA" ["bt_vgs_sjdh"]=> string(10) "93nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "7300pF @ 75V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-7，D²Pak（6 引线 + 接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "7" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB065N15N3GE8187ATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片），TO-263CB
描述： MOSFET N-CH 150V 130A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 40161 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：130A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103940161
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB065N15N3GE8187ATMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "47350" ["pdf_add"]=> string(134) "https://www.infineon.com/dgdl/IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "IPB017N06N3GATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 60V 180A TO263-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "1.7 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 196µA" ["bt_vgs_sjdh"]=> string(11) "275nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "23000pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "250W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(40) "TO-263-7，D²Pak（6 引线 + 接片）" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607925788" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB017N06N3GATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述： MOSFET N-CH 60V 180A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47350 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：250W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947350
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB017N06N3GATMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "47447" ["pdf_add"]=> string(134) "https://www.infineon.com/dgdl/IPB030N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae88a47a856b1" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "IPB030N08N3GATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 80V 160A TO263-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "160A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(21) "3 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 155µA" ["bt_vgs_sjdh"]=> string(11) "117nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "8110pF @ 40V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "214W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(40) "TO-263-7，D²Pak（6 引线 + 接片）" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926497" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB030N08N3GATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述： MOSFET N-CH 80V 160A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47447 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：160A（Tc）
Vgs(最大值)：±20V
功率-最大值：214W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947447
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB030N08N3GATMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "47508" ["pdf_add"]=> string(113) "https://www.infineon.com/dgdl/Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(15) "IRL60SC216ARMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(13) "IC MOSFET 60V" ["xl"]=> string(14) "StrongIRFET™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(12) "324A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(23) "1.5 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "218nC @ 4.5V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "16000pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.4W（Ta），375W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(40) "TO-263-7，D²Pak（6 引线 + 接片）" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607926753" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRL60SC216ARMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片）
描述： IC MOSFET 60V
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47508 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：324A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.4W（Ta），375W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947508
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRL60SC216ARMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "47625" ["pdf_add"]=> string(136) "https://www.infineon.com/dgdl/IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(66) "//media.digikey.com/Photos/Infineon%20Photos/TO-263-7,%20D2Pak.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(17) "IPB036N12N3GATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 120V 180A TO263-7" ["xl"]=> string(10) "OptiMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "120V" ["dl_lxlj"]=> string(12) "180A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "3.6 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 270µA" ["bt_vgs_sjdh"]=> string(11) "211nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "13800pF @ 60V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-7，D²Pak（6 引线 + 接片），TO-263CB" ["gysqjfz"]=> string(10) "PG-TO263-7" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607927300" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPB036N12N3GATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7
外壳：TO-263-7，D²Pak（6 引线 + 接片），TO-263CB
描述： MOSFET N-CH 120V 180A TO263-7
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47625 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：120V
电流-连续漏极(id)：180A（Tc）
Vgs(最大值)：±20V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947625
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPB036N12N3GATMA1' ) LIMIT 1

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