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array(72) { ["id"]=> string(5) "47712" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IMBG120R350M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ed11513272" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(78) "https://media.digikey.com/Photos/Infineon%20Photos/MFG_IMBG120R350M1HXTMA1.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IMBG120R350M1HXTMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(7) "SIC FET" ["xl"]=> string(10) "CoolSiC™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1.2kV" ["dl_lxlj"]=> string(12) "4.7A（Tc）" ["qddy"]=> string(12) "4.7A（Tc）" ["bt_id_vgs_rds"]=> string(21) "468 毫欧 @ 2A，18V" ["bt_id_vgs_zdz"]=> string(10) "5.7V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "5.9nC @ 18V" ["vgs_zdz"]=> string(11) "+18V，-15V" ["bt_vds_srdr"]=> string(12) "196pF @ 800V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(11) "65W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(13) "PG-TO263-7-12" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607927661" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IMBG120R350M1HXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7-12
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SIC FET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47712 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1.2kV
电流-连续漏极(id)：4.7A（Tc）
Vgs(最大值)：+18V，-15V
功率-最大值：65W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947712
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IMBG120R350M1HXTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "47757" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IMBG120R220M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecffdf326f" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(78) "https://media.digikey.com/Photos/Infineon%20Photos/MFG_IMBG120R220M1HXTMA1.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IMBG120R220M1HXTMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(7) "SIC FET" ["xl"]=> string(10) "CoolSiC™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1.2kV" ["dl_lxlj"]=> string(11) "13A（Tc）" ["qddy"]=> string(11) "13A（Tc）" ["bt_id_vgs_rds"]=> string(21) "294 毫欧 @ 4A，18V" ["bt_id_vgs_zdz"]=> string(12) "5.7V @ 1.6mA" ["bt_vgs_sjdh"]=> string(11) "9.4nC @ 18V" ["vgs_zdz"]=> string(11) "+18V，-15V" ["bt_vds_srdr"]=> string(12) "312pF @ 800V" ["fetgn"]=> string(12) "耗尽模式" ["gn_zdz"]=> string(11) "83W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(13) "PG-TO263-7-12" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607927814" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IMBG120R220M1HXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7-12
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SIC FET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47757 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1.2kV
电流-连续漏极(id)：13A（Tc）
Vgs(最大值)：+18V，-15V
功率-最大值：83W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947757
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IMBG120R220M1HXTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "47828" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IMBG120R140M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecf171326c" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IMBG120R140M1HXTMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(7) "SIC FET" ["xl"]=> string(10) "CoolSiC™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1.2kV" ["dl_lxlj"]=> string(11) "18A（Tc）" ["qddy"]=> string(11) "18A（Tc）" ["bt_id_vgs_rds"]=> string(21) "189 毫欧 @ 6A，18V" ["bt_id_vgs_zdz"]=> string(12) "5.7V @ 2.5mA" ["bt_vgs_sjdh"]=> string(12) "13.4nC @ 18V" ["vgs_zdz"]=> string(11) "+18V，-15V" ["bt_vds_srdr"]=> string(12) "491pF @ 800V" ["fetgn"]=> string(12) "耗尽模式" ["gn_zdz"]=> string(12) "107W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(13) "PG-TO263-7-12" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607928012" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IMBG120R140M1HXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7-12
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SIC FET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47828 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1.2kV
电流-连续漏极(id)：18A（Tc）
Vgs(最大值)：+18V，-15V
功率-最大值：107W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947828
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IMBG120R140M1HXTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "51384" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IMBG120R090M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ece3813269" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IMBG120R090M1HXTMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(7) "SIC FET" ["xl"]=> string(10) "CoolSiC™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1.2kV" ["dl_lxlj"]=> string(11) "26A（Tc）" ["qddy"]=> string(11) "26A（Tc）" ["bt_id_vgs_rds"]=> string(23) "125 毫欧 @ 8.5A，18V" ["bt_id_vgs_zdz"]=> string(12) "5.7V @ 3.7mA" ["bt_vgs_sjdh"]=> string(10) "23nC @ 18V" ["vgs_zdz"]=> string(11) "+18V，-15V" ["bt_vds_srdr"]=> string(12) "763pF @ 800V" ["fetgn"]=> string(12) "耗尽模式" ["gn_zdz"]=> string(12) "136W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(13) "PG-TO263-7-12" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937182" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IMBG120R090M1HXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7-12
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SIC FET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51384 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1.2kV
电流-连续漏极(id)：26A（Tc）
Vgs(最大值)：+18V，-15V
功率-最大值：136W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103951384
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IMBG120R090M1HXTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "51392" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IMBG120R060M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecd5ef3266" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IMBG120R060M1HXTMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(7) "SIC FET" ["xl"]=> string(10) "CoolSiC™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1.2kV" ["dl_lxlj"]=> string(11) "36A（Tc）" ["qddy"]=> string(11) "36A（Tc）" ["bt_id_vgs_rds"]=> string(21) "83 毫欧 @ 13A，18V" ["bt_id_vgs_zdz"]=> string(12) "5.7V @ 5.6mA" ["bt_vgs_sjdh"]=> string(10) "34nC @ 18V" ["vgs_zdz"]=> string(11) "+18V，-15V" ["bt_vds_srdr"]=> string(14) "1.145nF @ 800V" ["fetgn"]=> string(12) "耗尽模式" ["gn_zdz"]=> string(12) "181W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(13) "PG-TO263-7-12" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937193" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IMBG120R060M1HXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7-12
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SIC FET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51392 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1.2kV
电流-连续漏极(id)：36A（Tc）
Vgs(最大值)：+18V，-15V
功率-最大值：181W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103951392
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IMBG120R060M1HXTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "51400" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IMBG120R045M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecc4e83263" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IMBG120R045M1HXTMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(7) "SIC FET" ["xl"]=> string(10) "CoolSiC™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1.2kV" ["dl_lxlj"]=> string(11) "47A（Tc）" ["qddy"]=> string(11) "47A（Tc）" ["bt_id_vgs_rds"]=> string(21) "63 毫欧 @ 16A，18V" ["bt_id_vgs_zdz"]=> string(12) "5.7V @ 7.5mA" ["bt_vgs_sjdh"]=> string(10) "46nC @ 18V" ["vgs_zdz"]=> string(11) "+18V，-15V" ["bt_vds_srdr"]=> string(14) "1.527nF @ 800V" ["fetgn"]=> string(12) "耗尽模式" ["gn_zdz"]=> string(12) "227W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(13) "PG-TO263-7-12" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937194" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IMBG120R045M1HXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7-12
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SIC FET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51400 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1.2kV
电流-连续漏极(id)：47A（Tc）
Vgs(最大值)：+18V，-15V
功率-最大值：227W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103951400
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IMBG120R045M1HXTMA1' ) LIMIT 1
array(72) { ["id"]=> string(5) "51403" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IMBG120R030M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0eca774325c" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IMBG120R030M1HXTMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(7) "SIC FET" ["xl"]=> string(10) "CoolSiC™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(30) "SiC（碳化硅结晶体管）" ["ldjdy"]=> string(5) "1.2kV" ["dl_lxlj"]=> string(11) "56A（Tc）" ["qddy"]=> string(11) "56A（Tc）" ["bt_id_vgs_rds"]=> string(21) "41 毫欧 @ 25A，18V" ["bt_id_vgs_zdz"]=> string(13) "5.7V @ 11.5mA" ["bt_vgs_sjdh"]=> string(10) "63nC @ 18V" ["vgs_zdz"]=> string(11) "+18V，-15V" ["bt_vds_srdr"]=> string(13) "2.29nF @ 800V" ["fetgn"]=> string(12) "耗尽模式" ["gn_zdz"]=> string(12) "300W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-8，D²Pak（7 引线+接片），TO-263CA" ["gysqjfz"]=> string(13) "PG-TO263-7-12" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607937195" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IMBG120R030M1HXTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-TO263-7-12
外壳：TO-263-8，D²Pak（7 引线+接片），TO-263CA
描述： SIC FET
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51403 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：1.2kV
电流-连续漏极(id)：56A（Tc）
Vgs(最大值)：+18V，-15V
功率-最大值：300W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103951403
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IMBG120R030M1HXTMA1' ) LIMIT 1

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