array(74) {
["id"]=>
string(3) "768"
["pdf_add"]=>
string(110) "https://www.infineon.com/dgdl/Infineon-BSZ180P03NS3_G-DS-v02_01-en.pdf?fileId=db3a304326dfb13001271f04398f4ec1"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(23) "BSZ180P03NS3GATMA1TR-ND"
["zzsbh"]=>
string(18) "BSZ180P03NS3GATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.901530"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET P-CH 30V 39.6A TSDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(26) "9A（Ta），39.6A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(21) "18 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.1V @ 48µA"
["bt_vgs_sjdh"]=>
string(10) "30nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "2220pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），40W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET P-CH 30V 39.6A TSDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 768 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta），39.6A（Tc）
Vgs(最大值)：±25V
功率-最大值：2.1W（Ta），40W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ180P03NS3GATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "769"
["pdf_add"]=>
string(135) "https://www.infineon.com/dgdl/BSZ180P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304324fc7f9a0124fdf6df190050"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(24) "BSZ180P03NS3EGATMA1TR-ND"
["zzsbh"]=>
string(19) "BSZ180P03NS3EGATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.699680"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET P-CH 30V 39.6A TSDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(26) "9A（Ta），39.5A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(21) "18 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.1V @ 48µA"
["bt_vgs_sjdh"]=>
string(10) "30nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "2220pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），40W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET P-CH 30V 39.6A TSDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 769 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：9A（Ta），39.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：2.1W（Ta），40W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ180P03NS3EGATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "772"
["pdf_add"]=>
string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1138/BSZ120P03NS3EG.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(24) "BSZ120P03NS3EGATMA1TR-ND"
["zzsbh"]=>
string(19) "BSZ120P03NS3EGATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET P-CH 30V 11A/40A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "11A（Ta），40A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(21) "12 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.1V @ 73µA"
["bt_vgs_sjdh"]=>
string(10) "45nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "3360pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET P-CH 30V 11A/40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 772 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta），40A（Tc）
Vgs(最大值)：±25V
功率-最大值：2.1W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ120P03NS3EGATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "831"
["pdf_add"]=>
string(110) "http://www.infineon.com/dgdl/Infineon-IPZ40N04S5L-7R4-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d6601321448a0"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(22) "IPZ40N04S5L7R4ATMA1-ND"
["zzsbh"]=>
string(19) "IPZ40N04S5L7R4ATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(18) "MOSFET N-CH 8TDSON"
["xl"]=>
string(32) "Automotive, AEC-Q101, OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.4 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2V @ 10µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±16V"
["bt_vds_srdr"]=>
string(11) "920pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "34W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerVDFN
描述：
MOSFET N-CH 8TDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 831 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±16V
功率-最大值：34W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPZ40N04S5L7R4ATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "875"
["pdf_add"]=>
string(92) "https://www.infineon.com/assets/row/public/documents/10/49/infineon-ipz40n04s5-5r4-ds-en.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.0%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPZ40N04S55R4ATMA1.jpg"
["ljbh"]=>
string(21) "IPZ40N04S55R4ATMA1-ND"
["zzsbh"]=>
string(18) "IPZ40N04S55R4ATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.465680"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 40V 40A 8TSDSON"
["xl"]=>
string(32) "Automotive, AEC-Q101, OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(8) "7V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.4 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.4V @ 17µA"
["bt_vgs_sjdh"]=>
string(10) "23nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1300pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerVDFN
描述：
MOSFET N-CH 40V 40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 875 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±20V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPZ40N04S55R4ATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "876"
["pdf_add"]=>
string(110) "http://www.infineon.com/dgdl/Infineon-IPZ40N04S5L-4R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d66011b3e4894"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(22) "IPZ40N04S5L4R8ATMA1-ND"
["zzsbh"]=>
string(19) "IPZ40N04S5L4R8ATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 40V 40A 8TSDSON"
["xl"]=>
string(32) "Automotive, AEC-Q101, OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2V @ 17µA"
["bt_vgs_sjdh"]=>
string(10) "29nC @ 10V"
["vgs_zdz"]=>
string(5) "±16V"
["bt_vds_srdr"]=>
string(12) "1560pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerVDFN
描述：
MOSFET N-CH 40V 40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 876 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±16V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPZ40N04S5L4R8ATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "969"
["pdf_add"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/972/BSZ076N06NS3G.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Infineon%20Renders/8-TSDSON.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.0%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPZ40N04S55R4ATMA1.jpg"
["ljbh"]=>
string(23) "BSZ076N06NS3GATMA1TR-ND"
["zzsbh"]=>
string(18) "BSZ076N06NS3GATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 60V 20A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "20A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "7.6 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(10) "4V @ 35µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "4000pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），69W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerVDFN
描述：
MOSFET N-CH 60V 20A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 969 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ076N06NS3GATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "998"
["pdf_add"]=>
string(110) "https://www.infineon.com/dgdl/Infineon-IPZ40N04S5-3R1-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d660139b148a4"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.0%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/IPZ40N04S55R4ATMA1.jpg"
["ljbh"]=>
string(21) "IPZ40N04S53R1ATMA1-ND"
["zzsbh"]=>
string(18) "IPZ40N04S53R1ATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.079200"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 40V 40A 8TSDSON"
["xl"]=>
string(32) "Automotive, AEC-Q101, OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(8) "7V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.1 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.4V @ 30µA"
["bt_vgs_sjdh"]=>
string(10) "41nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2310pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "71W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerVDFN
描述：
MOSFET N-CH 40V 40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 998 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±20V
功率-最大值：71W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPZ40N04S53R1ATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(3) "999"
["pdf_add"]=>
string(110) "http://www.infineon.com/dgdl/Infineon-IPZ40N04S5L-2R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d6601139b4890"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(22) "IPZ40N04S5L2R8ATMA1-ND"
["zzsbh"]=>
string(19) "IPZ40N04S5L2R8ATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 40V 40A 8TSDSON"
["xl"]=>
string(32) "Automotive, AEC-Q101, OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2V @ 30µA"
["bt_vgs_sjdh"]=>
string(10) "52nC @ 10V"
["vgs_zdz"]=>
string(5) "±16V"
["bt_vds_srdr"]=>
string(12) "2800pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "71W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerVDFN
描述：
MOSFET N-CH 40V 40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 999 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±16V
功率-最大值：71W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPZ40N04S5L2R8ATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7928"
["pdf_add"]=>
string(135) "https://www.infineon.com/dgdl/BSZ100N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d4003e0a03f8"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(22) "BSZ100N03LSGATMA1TR-ND"
["zzsbh"]=>
string(17) "BSZ100N03LSGATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.271220"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 30V 40A TSDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "12A（Ta），40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(21) "10 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1500pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），30W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 40A TSDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7928 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：12A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），30W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ100N03LSGATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "8844"
["pdf_add"]=>
string(135) "https://www.infineon.com/dgdl/BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(22) "BSZ050N03LSGATMA1TR-ND"
["zzsbh"]=>
string(17) "BSZ050N03LSGATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.771290"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 30V 40A TSDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "16A（Ta），40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "5 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "35nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2800pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），50W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 40A TSDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 8844 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），50W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ050N03LSGATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "14279"
["pdf_add"]=>
string(70) "//media.digikey.com/PDF/Data%20Sheets/Infineon%20PDFs/BSZ067N06LS3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(59) "//media.digikey.com/Renders/Infineon%20Renders/8-TSDSON.jpg"
["images"]=>
string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-TSDSON.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "BS7067N06LS3GINTR-ND"
["zzsbh"]=>
string(13) "BS7067N06LS3G"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 60V 20A TSDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(25) "14A（Ta），20A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "6.7 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "2.2V @ 35µA"
["bt_vgs_sjdh"]=>
string(10) "62nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "4800pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），78W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerVDFN
描述：
MOSFET N-CH 60V 20A TSDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 14279 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：14A（Ta），20A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），78W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BS7067N06LS3G' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "24206"
["pdf_add"]=>
string(135) "https://www.infineon.com/dgdl/BSZ12DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15920ed91a5a"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(23) "BSZ12DN20NS3GATMA1TR-ND"
["zzsbh"]=>
string(18) "BSZ12DN20NS3GATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 200V 11.3A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "200V"
["dl_lxlj"]=>
string(13) "11.3A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "125 毫欧 @ 5.7A，10V"
["bt_id_vgs_zdz"]=>
string(10) "4V @ 25µA"
["bt_vgs_sjdh"]=>
string(11) "8.7nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "680pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "50W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 200V 11.3A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24206 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：11.3A（Tc）
Vgs(最大值)：±20V
功率-最大值：50W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ12DN20NS3GATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "25748"
["pdf_add"]=>
string(135) "http://www.infineon.com/dgdl/BSZ160N10N3SG_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c3365eef2370"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(23) "BSZ160N10NS3GATMA1TR-ND"
["zzsbh"]=>
string(18) "BSZ160N10NS3GATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 100V 40A TSDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(24) "8A（Ta），40A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(21) "16 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.5V @ 12µA"
["bt_vgs_sjdh"]=>
string(10) "25nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1700pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），63W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 100V 40A TSDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25748 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：8A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），63W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ160N10NS3GATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "27957"
["pdf_add"]=>
string(134) "http://www.infineon.com/dgdl/BSZ040N04LSG_rev1.3.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643b9e30f067b"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(22) "BSZ040N04LSGATMA1TR-ND"
["zzsbh"]=>
string(17) "BSZ040N04LSGATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 40V 40A TSDSON-8"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(25) "18A（Ta），40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "4 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2V @ 36µA"
["bt_vgs_sjdh"]=>
string(10) "64nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5100pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），69W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 40A TSDSON-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27957 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：18A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ040N04LSGATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "31179"
["pdf_add"]=>
string(135) "https://www.infineon.com/dgdl/BSZ088N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddf12fe902f6"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(22) "BSZ088N03MSGATMA1TR-ND"
["zzsbh"]=>
string(17) "BSZ088N03MSGATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 30V 11A/40A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "11A（Ta），40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "27nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），35W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 11A/40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31179 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），35W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ088N03MSGATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "31191"
["pdf_add"]=>
string(135) "https://www.infineon.com/dgdl/BSZ058N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddee2ce902ed"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(94) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-1.1%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/BSZ180P03NS3GATMA1.jpg"
["ljbh"]=>
string(22) "BSZ058N03MSGATMA1TR-ND"
["zzsbh"]=>
string(17) "BSZ058N03MSGATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(4) "5000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 30V 14A/40A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "14A（Ta），40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "5 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "40nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3100pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），45W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 30V 14A/40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31191 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），45W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ058N03MSGATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "31598"
["pdf_add"]=>
string(109) "http://www.infineon.com/dgdl/Infineon-BSZ150N10LS3_G-DS-v02_02-en.pdf?fileId=db3a30433c8a9179013c8aa12472000f"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(23) "BSZ150N10LS3GATMA1TR-ND"
["zzsbh"]=>
string(18) "BSZ150N10LS3GATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 100V 40A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(21) "15 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "2.1V @ 33µA"
["bt_vgs_sjdh"]=>
string(10) "35nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2500pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），63W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 100V 40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31598 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），63W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ150N10LS3GATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "31647"
["pdf_add"]=>
string(108) "https://www.infineon.com/dgdl/Infineon-BSZ075N08NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd5743e61f8"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6167/448%7EPPG-TSDSON-8-26%7E%7E8.jpg"
["images_dir"]=>
string(35) "./images/1039/BSZ075N08NS5ATMA1.jpg"
["ljbh"]=>
string(22) "BSZ075N08NS5ATMA1TR-ND"
["zzsbh"]=>
string(17) "BSZ075N08NS5ATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.861330"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 80V 40A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(11) "40A（Tc）"
["qddy"]=>
string(8) "6V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.5 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(12) "3.8V @ 36µA"
["bt_vgs_sjdh"]=>
string(12) "29.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2080pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "69W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 80V 40A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31647 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：40A（Tc）
Vgs(最大值)：±20V
功率-最大值：69W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ075N08NS5ATMA1' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32113"
["pdf_add"]=>
string(131) "http://www.infineon.com/dgdl/BSZ0909NS_rev3.2.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a3043284aacd80128827726205408"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "BSZ0909NSATMA1TR-ND"
["zzsbh"]=>
string(14) "BSZ0909NSATMA1"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 34V 9A 8TSDSON"
["xl"]=>
string(10) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "34V"
["dl_lxlj"]=>
string(24) "9A（Ta），36A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(21) "12 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1310pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "2.1W（Ta），25W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(11) "PG-TSDSON-8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 34V 9A 8TSDSON
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32113 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：34V
电流-连续漏极(id)：9A（Ta），36A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.1W（Ta），25W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ0909NSATMA1' ) LIMIT 1
|
