array(71) {
["id"]=>
string(3) "162"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/69026/si7272dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7272DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7272DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "6000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.683790"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(30) "MOSFET 2N-CH 30V 25A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(3) "25A"
["bt_id_vgs_rds"]=>
string(22) "9.3 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["bt_vds_srdr"]=>
string(12) "1100pF @ 15V"
["gn_zdz"]=>
string(3) "22W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 30V 25A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 162 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A
最大功率值：22W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7272DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "163"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/65366/si7288dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7288DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7288DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "96000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.548200"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(30) "MOSFET 2N-CH 40V 20A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(3) "20A"
["bt_id_vgs_rds"]=>
string(21) "19 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.8V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "15nC @ 10V"
["bt_vds_srdr"]=>
string(11) "565pF @ 20V"
["gn_zdz"]=>
string(5) "15.6W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "热销"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 40V 20A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 163 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：40V
电流-连续漏极(id)：20A
最大功率值：15.6W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7288DP-T1-GE3' ) LIMIT 1
供应商:
库存:16
|
array(71) {
["id"]=>
string(3) "170"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/65365/si7938dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7938DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7938DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "24000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.335560"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(30) "MOSFET 2N-CH 40V 60A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(3) "60A"
["bt_id_vgs_rds"]=>
string(24) "5.8 毫欧 @ 18.5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "65nC @ 10V"
["bt_vds_srdr"]=>
string(12) "2300pF @ 20V"
["gn_zdz"]=>
string(3) "46W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 40V 60A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 170 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：40V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7938DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "178"
["pdf_add"]=>
string(43) "https://www.vishay.com/docs/73130/73130.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "SI7949DP-T1-E3TR-ND"
["zzsbh"]=>
string(14) "SI7949DP-T1-E3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "6000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.478510"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(31) "MOSFET 2P-CH 60V 3.2A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(23) "2 个 P 沟道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(4) "3.2A"
["bt_id_vgs_rds"]=>
string(20) "64 毫欧 @ 5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "40nC @ 10V"
["bt_vds_srdr"]=>
string(1) "-"
["gn_zdz"]=>
string(4) "1.5W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2P-CH 60V 3.2A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 178 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：60V
电流-连续漏极(id)：3.2A
最大功率值：1.5W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7949DP-T1-E3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "179"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/71911/si7540dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "SI7540DP-T1-E3TR-ND"
["zzsbh"]=>
string(14) "SI7540DP-T1-E3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "18000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(32) "MOSFET N/P-CH 12V 7.6A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(14) "N 和 P 沟道"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "12V"
["dl_lxlj"]=>
string(11) "7.6A，5.7A"
["bt_id_vgs_rds"]=>
string(24) "17 毫欧 @ 11.8A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "17nC @ 4.5V"
["bt_vds_srdr"]=>
string(1) "-"
["gn_zdz"]=>
string(4) "1.4W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET N/P-CH 12V 7.6A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 179 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：12V
电流-连续漏极(id)：7.6A，5.7A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7540DP-T1-E3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "180"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/71911/si7540dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2608/SO-8%20Dual%20Pad.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7540DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7540DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(32) "MOSFET N/P-CH 12V 7.6A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(14) "N 和 P 沟道"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "12V"
["dl_lxlj"]=>
string(11) "7.6A，5.7A"
["bt_id_vgs_rds"]=>
string(24) "17 毫欧 @ 11.8A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "17nC @ 4.5V"
["bt_vds_srdr"]=>
string(1) "-"
["gn_zdz"]=>
string(4) "1.4W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET N/P-CH 12V 7.6A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 180 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：12V
电流-连续漏极(id)：7.6A，5.7A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7540DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "187"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/66719/si7997dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7997DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7997DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "15000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.339140"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992544"
["ms"]=>
string(30) "MOSFET 2P-CH 30V 60A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(23) "2 个 P 沟道（双）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(3) "60A"
["bt_id_vgs_rds"]=>
string(22) "5.5 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "160nC @ 10V"
["bt_vds_srdr"]=>
string(12) "6200pF @ 15V"
["gn_zdz"]=>
string(3) "46W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2P-CH 30V 60A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 187 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7997DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "193"
["pdf_add"]=>
string(43) "https://www.vishay.com/docs/72960/72960.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2608/SO-8%20Dual%20Pad.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7956DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7956DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "15000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "12.318210"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992544"
["ms"]=>
string(32) "MOSFET 2N-CH 150V 2.6A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(4) "150V"
["dl_lxlj"]=>
string(4) "2.6A"
["bt_id_vgs_rds"]=>
string(23) "105 毫欧 @ 4.1A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["bt_vds_srdr"]=>
string(1) "-"
["gn_zdz"]=>
string(4) "1.4W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 150V 2.6A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 193 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：150V
电流-连续漏极(id)：2.6A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥18.70
3000+:
￥14.39
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7956DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "195"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/69974/si7994dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7994DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7994DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "6000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "13.747970"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992544"
["ms"]=>
string(30) "MOSFET 2N-CH 30V 60A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(3) "60A"
["bt_id_vgs_rds"]=>
string(22) "5.6 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "80nC @ 10V"
["bt_vds_srdr"]=>
string(12) "3500pF @ 15V"
["gn_zdz"]=>
string(3) "46W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 30V 60A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 195 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥20.87
3000+:
￥16.06
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7994DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "399"
["pdf_add"]=>
string(43) "https://www.vishay.com/docs/72118/72118.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7942DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7942DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "9000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "10.853660"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(32) "MOSFET 2N-CH 100V 3.8A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(4) "3.8A"
["bt_id_vgs_rds"]=>
string(22) "49 毫欧 @ 5.9A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "24nC @ 10V"
["bt_vds_srdr"]=>
string(1) "-"
["gn_zdz"]=>
string(4) "1.4W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 100V 3.8A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 399 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：100V
电流-连续漏极(id)：3.8A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥16.48
3000+:
￥12.68
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7942DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "403"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/70359/si7236dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2608/SO-8%20Dual%20Pad.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7236DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7236DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "6000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992520"
["ms"]=>
string(30) "MOSFET 2N-CH 20V 60A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(3) "60A"
["bt_id_vgs_rds"]=>
string(25) "5.2 毫欧 @ 20.7A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "105nC @ 10V"
["bt_vds_srdr"]=>
string(12) "4000pF @ 10V"
["gn_zdz"]=>
string(3) "46W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 20V 60A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 403 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：20V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7236DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "513"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/68970/si7998dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7998DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7998DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "6000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.754940"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992544"
["ms"]=>
string(30) "MOSFET 2N-CH 30V 25A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(9) "25A，30A"
["bt_id_vgs_rds"]=>
string(22) "9.3 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["bt_vds_srdr"]=>
string(12) "1100pF @ 15V"
["gn_zdz"]=>
string(9) "22W，40W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 30V 25A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 513 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A，30A
最大功率值：22W，40W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7998DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "517"
["pdf_add"]=>
string(43) "https://www.vishay.com/docs/73130/73130.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7949DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7949DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "12000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.662510"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992544"
["ms"]=>
string(31) "MOSFET 2P-CH 60V 3.2A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(23) "2 个 P 沟道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(4) "3.2A"
["bt_id_vgs_rds"]=>
string(20) "64 毫欧 @ 5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "3V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "40nC @ 10V"
["bt_vds_srdr"]=>
string(1) "-"
["gn_zdz"]=>
string(4) "1.5W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2P-CH 60V 3.2A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 517 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：60V
电流-连续漏极(id)：3.2A
最大功率值：1.5W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7949DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "872"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/68391/si7980dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7980DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7980DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992544"
["ms"]=>
string(29) "MOSFET 2N-CH 20V 8A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(26) "2 个 N 通道（半桥）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(2) "8A"
["bt_id_vgs_rds"]=>
string(20) "22 毫欧 @ 5A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "27nC @ 10V"
["bt_vds_srdr"]=>
string(12) "1010pF @ 10V"
["gn_zdz"]=>
string(13) "19.8W，21.9W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 20V 8A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 872 ) LIMIT 1
Fet类型：2 个 N 通道（半桥）
Fet功能：标准
漏源极电压(vdss)：20V
电流-连续漏极(id)：8A
最大功率值：19.8W，21.9W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7980DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "893"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/67017/sqj960ep.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(92) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/785/742%3B5976Dual%3BDP%2CEP%3B8.JPG"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SQJ960EP-T1_GE3TR-ND"
["zzsbh"]=>
string(15) "SQJ960EP-T1_GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.497910"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992602"
["ms"]=>
string(19) "MOSFET 2N-CH 60V 8A"
["xl"]=>
string(33) "Automotive, AEC-Q101, TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(2) "8A"
["bt_id_vgs_rds"]=>
string(22) "36 毫欧 @ 5.3A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "20nC @ 10V"
["bt_vds_srdr"]=>
string(11) "735pF @ 25V"
["gn_zdz"]=>
string(3) "34W"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 60V 8A
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 893 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：60V
电流-连续漏极(id)：8A
最大功率值：34W
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJ960EP-T1_GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "903"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/62634/si7252dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7252DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7252DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.235770"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(32) "MOSFET 2N-CH 100V 36.7A PPAK 8SO"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(5) "36.7A"
["bt_id_vgs_rds"]=>
string(21) "18 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "27nC @ 10V"
["bt_vds_srdr"]=>
string(12) "1170pF @ 50V"
["gn_zdz"]=>
string(3) "46W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 100V 36.7A PPAK 8SO
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 903 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：100V
电流-连续漏极(id)：36.7A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7252DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(3) "921"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/68700/si7234dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "SI7234DP-T1-GE3TR-ND"
["zzsbh"]=>
string(15) "SI7234DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "10.957030"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992520"
["ms"]=>
string(30) "MOSFET 2N-CH 12V 60A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "12V"
["dl_lxlj"]=>
string(3) "60A"
["bt_id_vgs_rds"]=>
string(23) "3.4 毫欧 @ 20A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "120nC @ 10V"
["bt_vds_srdr"]=>
string(11) "5000pF @ 6V"
["gn_zdz"]=>
string(3) "46W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 12V 60A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 921 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：12V
电流-连续漏极(id)：60A
最大功率值：46W
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥16.63
3000+:
￥12.80
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7234DP-T1-GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(4) "1140"
["pdf_add"]=>
string(43) "https://www.vishay.com/docs/72118/72118.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "SI7942DP-T1-E3TR-ND"
["zzsbh"]=>
string(14) "SI7942DP-T1-E3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "10.853660"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(32) "MOSFET 2N-CH 100V 3.8A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(4) "3.8A"
["bt_id_vgs_rds"]=>
string(22) "49 毫欧 @ 5.9A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "24nC @ 10V"
["bt_vds_srdr"]=>
string(1) "-"
["gn_zdz"]=>
string(4) "1.4W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 100V 3.8A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1140 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：100V
电流-连续漏极(id)：3.8A
最大功率值：1.4W
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥16.48
3000+:
￥12.68
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7942DP-T1-E3' ) LIMIT 1
|
array(71) {
["id"]=>
string(4) "1538"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/62832/sqj844aep.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(92) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/785/742%3B5976Dual%3BDP%2CEP%3B8.JPG"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "SQJ844AEP-T1_GE3-ND"
["zzsbh"]=>
string(16) "SQJ844AEP-T1_GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.910290"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992589"
["ms"]=>
string(29) "MOSFET 2N-CH 30V 8A PPAK SO-8"
["xl"]=>
string(33) "Automotive, AEC-Q101, TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(6) "标准"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(2) "8A"
["bt_id_vgs_rds"]=>
string(24) "16.6 毫欧 @ 7.6A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "26nC @ 10V"
["bt_vds_srdr"]=>
string(12) "1161pF @ 15V"
["gn_zdz"]=>
string(3) "48W"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 30V 8A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1538 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A
最大功率值：48W
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJ844AEP-T1_GE3' ) LIMIT 1
|
array(71) {
["id"]=>
string(4) "1567"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/66817/si7270dp.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(78) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/SO-8%20Dual%20Pad.jpg"
["images"]=>
string(89) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E5881-DUAL%7EDP%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "SI7270DP-T1-GE3-ND"
["zzsbh"]=>
string(15) "SI7270DP-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705992532"
["ms"]=>
string(29) "MOSFET 2N-CH 30V 8A PPAK SO-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(19) "2 N-通道（双）"
["fetgn"]=>
string(15) "逻辑电平门"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(2) "8A"
["bt_id_vgs_rds"]=>
string(20) "21 毫欧 @ 8A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.8V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "21nC @ 10V"
["bt_vds_srdr"]=>
string(11) "900pF @ 15V"
["gn_zdz"]=>
string(5) "17.8W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "POWERPAK® SO-8 双"
["gysqjfz"]=>
string(20) "POWERPAK® SO-8 DUAL"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "131"
["wl_num"]=>
string(4) "1041"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(23) "golon_jtg_fet_mosfet_zl"
["ch_bm"]=>
string(15) "多通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1041"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 多通道MOS管"
["action_name"]=>
string(5) "jtg10"
["rate"]=>
string(5) "1.168"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.5180"
}
}
封装：POWERPAK® SO-8 DUAL
外壳：POWERPAK® SO-8 双
描述：
MOSFET 2N-CH 30V 8A PPAK SO-8
|
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1567 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A
最大功率值：17.8W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SI7270DP-T1-GE3' ) LIMIT 1
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