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array(72) { ["id"]=> string(3) "910" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/IRFHM830PBF.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFHM830DTR2PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRFHM830DTR2PBF.jpg" ["ljbh"]=> string(16) "IRFHM830TRPBF-ND" ["zzsbh"]=> string(13) "IRFHM830TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 21A PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "21A（Ta），40A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 50µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "2155pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.7W（Ta），37W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "8-VQFN 裸露焊盘" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM830TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-VQFN 裸露焊盘
描述： MOSFET N-CH 30V 21A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 910 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：21A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.7W（Ta），37W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1039910
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM830TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(4) "2623" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/IRFHM830DPBF.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFHM830DTR2PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRFHM830DTR2PBF.jpg" ["ljbh"]=> string(17) "IRFHM830DTRPBF-ND" ["zzsbh"]=> string(14) "IRFHM830DTRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 20A PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "20A（Ta），40A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "4.3 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 50µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1797pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），37W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "8-VQFN 裸露焊盘" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM830DTRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-VQFN 裸露焊盘
描述： MOSFET N-CH 30V 20A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2623 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.8W（Ta），37W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10392623
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM830DTRPBF' ) LIMIT 1
array(72) { ["id"]=> string(4) "2641" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/IRLHM630PBF.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFHM830DTR2PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRFHM830DTR2PBF.jpg" ["ljbh"]=> string(16) "IRLHM630TRPBF-ND" ["zzsbh"]=> string(13) "IRLHM630TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 21A/40A PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "21A（Ta），40A（Tc）" ["qddy"]=> string(10) "2.5V，10V" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 20A，4.5V" ["bt_id_vgs_zdz"]=> string(12) "1.1V @ 50µA" ["bt_vgs_sjdh"]=> string(11) "62nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "3170pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.7W（Ta），37W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "8-VQFN 裸露焊盘" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRLHM630TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-VQFN 裸露焊盘
描述： MOSFET N-CH 30V 21A/40A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2641 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：21A（Ta），40A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.7W（Ta），37W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：10392641
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLHM630TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19835" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irfhm9331pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(20) "IRFHM9331TR2PBFCT-ND" ["zzsbh"]=> string(15) "IRFHM9331TR2PBF" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 11A 3X3 PQFN" ["xl"]=> string(1) "*" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "11A（Ta），24A（Tc）" ["qddy"]=> string(25) "11A（Ta），24A（Tc）" ["bt_id_vgs_rds"]=> string(21) "10 毫欧 @ 11A，20V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 25µA" ["bt_vgs_sjdh"]=> string(10) "48nC @ 10V" ["vgs_zdz"]=> string(10) "48nC @ 10V" ["bt_vds_srdr"]=> string(12) "1543pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM9331TR2PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-PowerTDFN
描述： MOSFET P-CH 30V 11A 3X3 PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19835 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta），24A（Tc）
Vgs(最大值)：48nC @ 10V
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：103919835
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM9331TR2PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19962" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/IRFHM830DPBF.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFHM830DTR2PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRFHM830DTR2PBF.jpg" ["ljbh"]=> string(20) "IRFHM830DTR2PBFCT-ND" ["zzsbh"]=> string(15) "IRFHM830DTR2PBF" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 20A PQFN" ["xl"]=> string(1) "*" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "20A（Ta），40A（Tc）" ["qddy"]=> string(25) "20A（Ta），40A（Tc）" ["bt_id_vgs_rds"]=> string(22) "4.3 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 50µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["vgs_zdz"]=> string(10) "27nC @ 10V" ["bt_vds_srdr"]=> string(12) "1797pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "8-VQFN 裸露焊盘" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM830DTR2PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-VQFN 裸露焊盘
描述： MOSFET N-CH 30V 20A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19962 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：20A（Ta），40A（Tc）
Vgs(最大值)：27nC @ 10V
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：103919962
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM830DTR2PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19964" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/IRFHM830PBF.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFHM830DTR2PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRFHM830DTR2PBF.jpg" ["ljbh"]=> string(19) "IRFHM830TR2PBFCT-ND" ["zzsbh"]=> string(14) "IRFHM830TR2PBF" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 21A PQFN" ["xl"]=> string(1) "*" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "21A（Ta），40A（Tc）" ["qddy"]=> string(25) "21A（Ta），40A（Tc）" ["bt_id_vgs_rds"]=> string(22) "3.8 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 50µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(10) "31nC @ 10V" ["bt_vds_srdr"]=> string(12) "2155pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "8-VQFN 裸露焊盘" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM830TR2PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-VQFN 裸露焊盘
描述： MOSFET N-CH 30V 21A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19964 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：21A（Ta），40A（Tc）
Vgs(最大值)：31nC @ 10V
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：103919964
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM830TR2PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19966" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/IRFHM831PBF.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "IRFHM831TR2PBFCT-ND" ["zzsbh"]=> string(14) "IRFHM831TR2PBF" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 14A PQFN" ["xl"]=> string(1) "*" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "14A（Ta），40A（Tc）" ["qddy"]=> string(25) "14A（Ta），40A（Tc）" ["bt_id_vgs_rds"]=> string(22) "7.8 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(10) "16nC @ 10V" ["vgs_zdz"]=> string(10) "16nC @ 10V" ["bt_vds_srdr"]=> string(12) "1050pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM831TR2PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-PowerTDFN
描述： MOSFET N-CH 30V 14A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19966 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14A（Ta），40A（Tc）
Vgs(最大值)：16nC @ 10V
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：103919966
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM831TR2PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19968" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irlhm620pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFHM830DTR2PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRFHM830DTR2PBF.jpg" ["ljbh"]=> string(19) "IRLHM620TR2PBFCT-ND" ["zzsbh"]=> string(14) "IRLHM620TR2PBF" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 20V 26A PQFN" ["xl"]=> string(1) "*" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "26A（Ta），40A（Tc）" ["qddy"]=> string(25) "26A（Ta），40A（Tc）" ["bt_id_vgs_rds"]=> string(23) "2.5 毫欧 @ 20A，4.5V" ["bt_id_vgs_zdz"]=> string(12) "1.1V @ 50µA" ["bt_vgs_sjdh"]=> string(11) "78nC @ 4.5V" ["vgs_zdz"]=> string(11) "78nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "3620pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "8-VQFN 裸露焊盘" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRLHM620TR2PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-VQFN 裸露焊盘
描述： MOSFET N-CH 20V 26A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19968 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：26A（Ta），40A（Tc）
Vgs(最大值)：78nC @ 4.5V
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：103919968
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLHM620TR2PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "19970" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irlhm630pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(81) "//media.digikey.com/Photos/International%20Rectifier%20Photos/IRFHM830DTR2PBF.jpg" ["images"]=> string(99) "https://www.chenkeiot.com/Public/imagesmk/Photos/International_Rectifier_Photos/IRFHM830DTR2PBF.jpg" ["ljbh"]=> string(19) "IRLHM630TR2PBFCT-ND" ["zzsbh"]=> string(14) "IRLHM630TR2PBF" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 21A PQFN" ["xl"]=> string(1) "*" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "21A（Ta），40A（Tc）" ["qddy"]=> string(25) "21A（Ta），40A（Tc）" ["bt_id_vgs_rds"]=> string(23) "3.5 毫欧 @ 20A，4.5V" ["bt_id_vgs_zdz"]=> string(12) "1.1V @ 50µA" ["bt_vgs_sjdh"]=> string(11) "62nC @ 4.5V" ["vgs_zdz"]=> string(11) "62nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "3170pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "8-VQFN 裸露焊盘" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRLHM630TR2PBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-VQFN 裸露焊盘
描述： MOSFET N-CH 30V 21A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 19970 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：21A（Ta），40A（Tc）
Vgs(最大值)：62nC @ 4.5V
功率-最大值：-
工作温度：-
丝印：(请登录)
料号：103919970
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLHM630TR2PBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "23151" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irfhm9331pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "IRFHM9331TRPBFTR-ND" ["zzsbh"]=> string(14) "IRFHM9331TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET P-CH 30V 11A/24A PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "P 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "11A（Ta），24A（Tc）" ["qddy"]=> string(9) "10V，20V" ["bt_id_vgs_rds"]=> string(21) "10 毫欧 @ 11A，20V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 25µA" ["bt_vgs_sjdh"]=> string(10) "48nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "1543pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "2.8W（Ta）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM9331TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-PowerTDFN
描述： MOSFET P-CH 30V 11A/24A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23151 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11A（Ta），24A（Tc）
Vgs(最大值)：±25V
功率-最大值：2.8W（Ta）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103923151
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM9331TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "24801" ["pdf_add"]=> string(64) "http://www.irf.com/product-info/datasheets/data/irfhm8329pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(19) "IRFHM8329TRPBFTR-ND" ["zzsbh"]=> string(14) "IRFHM8329TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "4000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 30V 16A/57A PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "16A（Ta），57A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "6.1 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.2V @ 25µA" ["bt_vgs_sjdh"]=> string(10) "26nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1710pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.6W（Ta），33W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM8329TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-PowerTDFN
描述： MOSFET N-CH 30V 16A/57A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24801 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16A（Ta），57A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.6W（Ta），33W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103924801
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM8329TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "31577" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/irlhm620pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "IRLHM620TRPBFTR-ND" ["zzsbh"]=> string(13) "IRLHM620TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(4) "6978" ["num"]=> string(1) " " ["price_addtime"]=> string(10) "1555921028" ["ms"]=> string(24) "MOSFET N-CH 20V 26A PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(25) "26A（Ta），40A（Tc）" ["qddy"]=> string(10) "2.5V，10V" ["bt_id_vgs_rds"]=> string(23) "2.5 毫欧 @ 20A，4.5V" ["bt_id_vgs_zdz"]=> string(12) "1.1V @ 50µA" ["bt_vgs_sjdh"]=> string(11) "78nC @ 4.5V" ["vgs_zdz"]=> string(5) "±12V" ["bt_vds_srdr"]=> string(12) "3620pF @ 10V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.7W（Ta），37W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRLHM620TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-PowerTDFN
描述： MOSFET N-CH 20V 26A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 31577 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：26A（Ta），40A（Tc）
Vgs(最大值)：±12V
功率-最大值：2.7W（Ta），37W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103931577
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLHM620TRPBF' ) LIMIT 1
array(72) { ["id"]=> string(5) "32475" ["pdf_add"]=> string(63) "http://www.irf.com/product-info/datasheets/data/IRFHM831PBF.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["ljbh"]=> string(18) "IRFHM831TRPBFTR-ND" ["zzsbh"]=> string(13) "IRFHM831TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N-CH 30V 14A PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(25) "14A（Ta），40A（Tc）" ["qddy"]=> string(10) "4.5V，10V" ["bt_id_vgs_rds"]=> string(22) "7.8 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "2.35V @ 25µA" ["bt_vgs_sjdh"]=> string(10) "16nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1050pF @ 25V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.5W（Ta），27W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(13) "PQFN（3x3）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IRFHM831TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PQFN（3x3）
外壳：8-PowerTDFN
描述： MOSFET N-CH 30V 14A PQFN
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32475 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14A（Ta），40A（Tc）
Vgs(最大值)：±20V
功率-最大值：2.5W（Ta），27W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932475
量大可议价
起订量:10 修改
包装量: 修改
个
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRFHM831TRPBF' ) LIMIT 1

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