array(74) {
["id"]=>
string(5) "32537"
["pdf_add"]=>
string(57) "http://www.fairchildsemi.com/datasheets/FC/FCMT199N60.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(70) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/4-PowerTSFN.jpg"
["images"]=>
string(88) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/4-PowerTSFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(15) "FCMT199N60TR-ND"
["zzsbh"]=>
string(10) "FCMT199N60"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 600V 20.2A POWER88"
["xl"]=>
string(13) "SuperFET® II"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(13) "20.2A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "199 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "74nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "2950pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "208W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "4-PowerTSFN"
["gysqjfz"]=>
string(7) "Power88"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "4"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：Power88
外壳：4-PowerTSFN
描述：
MOSFET N-CH 600V 20.2A POWER88
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32537 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：20.2A（Tc）
Vgs(最大值)：±20V
功率-最大值：208W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FCMT199N60' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35845"
["pdf_add"]=>
string(53) "https://www.onsemi.com/pdf/datasheet/fcmt299n60-d.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(70) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/4-PowerTSFN.jpg"
["images"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/1046/4-PowerTSFN.jpg"
["images_dir"]=>
string(28) "./images/1039/FCMT299N60.jpg"
["ljbh"]=>
string(15) "FCMT299N60TR-ND"
["zzsbh"]=>
string(10) "FCMT299N60"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "15.955650"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 600V 12A POWER88"
["xl"]=>
string(13) "SuperFET® II"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(23) "Fairchild Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "12A（Ta）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "299 毫欧 @ 6A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "51nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "1948pF @ 380V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "125W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "4-PowerTSFN"
["gysqjfz"]=>
string(7) "Power88"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "4"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：Power88
外壳：4-PowerTSFN
描述：
MOSFET N-CH 600V 12A POWER88
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35845 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：12A（Ta）
Vgs(最大值)：±20V
功率-最大值：125W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥23.85
3000+:
￥18.27
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FCMT299N60' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "48508"
["pdf_add"]=>
string(55) "https://www.onsemi.com/pdf/datasheet/fcmt180n65s3-d.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/1046/4-PowerTSFN.jpg"
["images_dir"]=>
string(28) "./images/1039/FCMT299N60.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "FCMT180N65S3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "18.611140"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(21) "SUPERFET3 650V PQFN88"
["xl"]=>
string(14) "SuperFET® III"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(16) "ON Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "17A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "180 毫欧 @ 8.5A，10V"
["bt_id_vgs_zdz"]=>
string(12) "4.5V @ 1.8mA"
["bt_vgs_sjdh"]=>
string(10) "33nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1350pF @ 400V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "139W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "4-PowerTSFN"
["gysqjfz"]=>
string(7) "Power88"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "4"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607930785"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：Power88
外壳：4-PowerTSFN
描述：
SUPERFET3 650V PQFN88
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48508 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：17A（Tc）
Vgs(最大值)：±30V
功率-最大值：139W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥27.82
3000+:
￥21.31
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FCMT180N65S3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50567"
["pdf_add"]=>
string(55) "https://www.onsemi.com/pdf/datasheet/fcmt250n65s3-d.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/1046/4-PowerTSFN.jpg"
["images_dir"]=>
string(28) "./images/1039/FCMT299N60.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "FCMT250N65S3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "15.824380"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(21) "SUPERFET3 650V PQFN88"
["xl"]=>
string(14) "SuperFET® III"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(16) "ON Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "12A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "250 毫欧 @ 6A，10V"
["bt_id_vgs_zdz"]=>
string(12) "4.5V @ 1.2mA"
["bt_vgs_sjdh"]=>
string(10) "24nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1010pF @ 400V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "90W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "4-PowerTSFN"
["gysqjfz"]=>
string(7) "Power88"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "4"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935473"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：Power88
外壳：4-PowerTSFN
描述：
SUPERFET3 650V PQFN88
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50567 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±30V
功率-最大值：90W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥23.66
3000+:
￥18.12
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购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FCMT250N65S3' ) LIMIT 1
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array(74) {
["id"]=>
string(5) "50741"
["pdf_add"]=>
string(55) "https://www.onsemi.com/pdf/datasheet/fcmt099n65s3-d.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/1046/4-PowerTSFN.jpg"
["images_dir"]=>
string(28) "./images/1039/FCMT299N60.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(12) "FCMT099N65S3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "25.873640"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "MOSFET N-CH 650V 30A POWER88"
["xl"]=>
string(14) "SuperFET® III"
["zzs"]=>
string(16) "ONSEMI/安森美"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(16) "ON Semiconductor"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "30A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "99 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(10) "4.5V @ 3mA"
["bt_vgs_sjdh"]=>
string(10) "56nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2270pF @ 400V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "227W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "4-PowerTSFN"
["gysqjfz"]=>
string(7) "Power88"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "4"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935682"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
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select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：Power88
外壳：4-PowerTSFN
描述：
MOSFET N-CH 650V 30A POWER88
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50741 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：30A（Tc）
Vgs(最大值)：±30V
功率-最大值：227W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥38.68
3000+:
￥29.63
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FCMT099N65S3' ) LIMIT 1
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