array(74) {
["id"]=>
string(4) "6107"
["pdf_add"]=>
string(174) "https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/d0/28/eb/29/a1/da/48/69/DM00454150/files/DM00454150.pdf/jcr:content/translations/en.DM00454150.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "STL12HN65M2-ND"
["zzsbh"]=>
string(11) "STL12HN65M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(12) "POWER MOSFET"
["xl"]=>
string(1) "*"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(1) "-"
["js"]=>
string(1) "-"
["ldjdy"]=>
string(1) "-"
["dl_lxlj"]=>
string(1) "-"
["qddy"]=>
string(1) "-"
["bt_id_vgs_rds"]=>
string(1) "-"
["bt_id_vgs_zdz"]=>
string(1) "-"
["bt_vgs_sjdh"]=>
string(1) "-"
["vgs_zdz"]=>
string(1) "-"
["bt_vds_srdr"]=>
string(1) "-"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(1) "-"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
POWER MOSFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6107 ) LIMIT 1
Fet类型：-
漏源极电压(vdss)：-
电流-连续漏极(id)：-
Vgs(最大值)：-
功率-最大值：-
工作温度：-
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12HN65M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20019"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/31/3d/29/57/87/6a/41/20/DM00148686.pdf/files/DM00148686.pdf/jcr:content/translations/en.DM00148686.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-16003-2-ND"
["zzsbh"]=>
string(10) "STL16N60M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.509100"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 600V 8A POWERFLAT"
["xl"]=>
string(12) "MDmesh™ M2"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(10) "8A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "355 毫欧 @ 4A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "19nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "704pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "52W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 8A POWERFLAT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20019 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：8A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL16N60M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "25240"
["pdf_add"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/1080/STL15N60M2-EP.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-15912-2-ND"
["zzsbh"]=>
string(13) "STL15N60M2-EP"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.243530"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 600V 7A PWRFLAT HV"
["xl"]=>
string(15) "MDmesh™ M2-EP"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(10) "7A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "418 毫欧 @ 4.5A，10V"
["bt_id_vgs_zdz"]=>
string(14) "4.75V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "590pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "55W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 7A PWRFLAT HV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 25240 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±25V
功率-最大值：55W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL15N60M2-EP' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47519"
["pdf_add"]=>
string(174) "https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/7b/e5/e8/2e/81/f7/4b/6d/DM00381924/files/DM00381924.pdf/jcr:content/translations/en.DM00381924.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(10) "STL16N60M6"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.246140"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "NCHANNEL 600V M6 POWER MOSFET"
["xl"]=>
string(9) "MDmesh™"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(1) "-"
["js"]=>
string(1) "-"
["ldjdy"]=>
string(1) "-"
["dl_lxlj"]=>
string(1) "-"
["qddy"]=>
string(1) "-"
["bt_id_vgs_rds"]=>
string(1) "-"
["bt_id_vgs_zdz"]=>
string(1) "-"
["bt_vgs_sjdh"]=>
string(1) "-"
["vgs_zdz"]=>
string(1) "-"
["bt_vds_srdr"]=>
string(1) "-"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(1) "-"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "热销"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926820"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
NCHANNEL 600V M6 POWER MOSFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47519 ) LIMIT 1
Fet类型：-
漏源极电压(vdss)：-
电流-连续漏极(id)：-
Vgs(最大值)：-
功率-最大值：-
工作温度：-
|
|
10+:
￥13.82
3000+:
￥10.59
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL16N60M6' ) LIMIT 1
供应商:
库存:2K+
|
array(74) {
["id"]=>
string(5) "30074"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/65/14/17/85/17/67/44/ac/DM00187264.pdf/files/DM00187264.pdf/jcr:content/translations/en.DM00187264.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-16039-2-ND"
["zzsbh"]=>
string(10) "STL12N60M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.575530"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 600V 6.5A POWERFLAT"
["xl"]=>
string(12) "MDmesh™ M2"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(12) "6.5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "495 毫欧 @ 4.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "16nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "538pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 6.5A POWERFLAT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30074 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：6.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12N60M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "30213"
["pdf_add"]=>
string(55) "https://www.st.com/resource/en/datasheet/stl10n65m2.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(58) "//media.digikey.com/Photos/STMicro%20Photos/STL10N65M2.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-15052-2-ND"
["zzsbh"]=>
string(10) "STL10N65M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.052720"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 650V 4.5A POWERFLAT"
["xl"]=>
string(1) "-"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(12) "4.5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "1 欧姆 @ 2.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "10.3nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "315pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 650V 4.5A POWERFLAT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30213 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：4.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL10N65M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "30216"
["pdf_add"]=>
string(0) ""
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/3-PowerQFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-15054-2-ND"
["zzsbh"]=>
string(10) "STL12N65M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 650V 8.5A PWRFLAT56"
["xl"]=>
string(9) "MDmesh™"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(10) "5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "750 毫欧 @ 3A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "12.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "410pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 650V 8.5A PWRFLAT56
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30216 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12N65M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "30368"
["pdf_add"]=>
string(0) ""
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-14965-2-ND"
["zzsbh"]=>
string(10) "STL10N60M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.173480"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 600V 5.5A PWRFLAT56"
["xl"]=>
string(17) "MDmesh™ II Plus"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(12) "5.5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "660 毫欧 @ 2.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "13.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "400pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 5.5A PWRFLAT56
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30368 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：5.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL10N60M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "30479"
["pdf_add"]=>
string(174) "https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/86/79/a6/6f/da/57/4a/c8/DM00141948/files/DM00141948.pdf/jcr:content/translations/en.DM00141948.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-15259-2-ND"
["zzsbh"]=>
string(10) "STL16N65M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.672880"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 650V 7.5A POWERFLAT"
["xl"]=>
string(12) "MDmesh™ M2"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(12) "7.5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "395 毫欧 @ 3.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "19.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "718pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "56W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 650V 7.5A POWERFLAT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30479 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：7.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：56W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL16N65M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32724"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/32/81/cd/3c/20/f9/4a/21/DM00121840.pdf/files/DM00121840.pdf/jcr:content/translations/en.DM00121840.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/STL120N8F7.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-15146-2-ND"
["zzsbh"]=>
string(10) "STL18N60M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "8.200070"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 600V 9A POWERFLAT"
["xl"]=>
string(17) "MDmesh™ II Plus"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(10) "9A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "308 毫欧 @ 4.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "21.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "791pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "57W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 9A POWERFLAT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32724 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：9A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL18N60M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37519"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/f7/5e/a0/6d/ae/a8/49/96/DM00152696.pdf/files/DM00152696.pdf/jcr:content/translations/en.DM00152696.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-15476-2-ND"
["zzsbh"]=>
string(10) "STL13N65M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.256210"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 650V 6.5A POWERFLAT"
["xl"]=>
string(12) "MDmesh™ M2"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(12) "6.5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "475 毫欧 @ 3A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "590pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 650V 6.5A POWERFLAT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37519 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：6.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N65M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37779"
["pdf_add"]=>
string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00110867.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg"
["images_dir"]=>
string(27) "./images/1039/STL3NM60N.jpg"
["ljbh"]=>
string(14) "497-15477-2-ND"
["zzsbh"]=>
string(10) "STL18N65M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 650V 8A POWERFLAT"
["xl"]=>
string(12) "MDmesh™ M2"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(10) "8A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "365 毫欧 @ 4A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "21.5nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "764pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "57W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 650V 8A POWERFLAT
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37779 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：8A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL18N65M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37816"
["pdf_add"]=>
string(77) "http://www.st.com/web/en/resource/technical/document/datasheet/DM00102384.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg"
["images_dir"]=>
string(27) "./images/1039/STL3NM60N.jpg"
["ljbh"]=>
string(14) "497-14970-2-ND"
["zzsbh"]=>
string(9) "STL9N60M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 600V 4.8A PWRFLAT56"
["xl"]=>
string(17) "MDmesh™ II Plus"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(12) "4.8A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "860 毫欧 @ 2.4A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "10nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "320pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 4.8A PWRFLAT56
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37816 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：4.8A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL9N60M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "37926"
["pdf_add"]=>
string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/19/fa/08/64/78/74/48/34/DM00116759.pdf/files/DM00116759.pdf/jcr:content/translations/en.DM00116759.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg"
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(14) "497-14966-2-ND"
["zzsbh"]=>
string(10) "STL13N60M2"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "MOSFET N-CH 600V 7A PWRFLAT56"
["xl"]=>
string(17) "MDmesh™ II Plus"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(10) "7A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "420 毫欧 @ 4.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "580pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "55W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 7A PWRFLAT56
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 37926 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±25V
功率-最大值：55W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N60M2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47421"
["pdf_add"]=>
string(174) "https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/1c/c5/19/10/b3/72/4c/e5/DM00290959/files/DM00290959.pdf/jcr:content/translations/en.DM00290959.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(11) "STL13N60DM2"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.880070"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 600V 8A POWERFLAT HV"
["xl"]=>
string(13) "MDmesh™ DM2"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(10) "8A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "370 毫欧 @ 4A，10V"
["bt_id_vgs_zdz"]=>
string(11) "5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "19nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "730pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "52W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926191"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
MOSFET N-CH 600V 8A POWERFLAT HV
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47421 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：8A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N60DM2' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47445"
["pdf_add"]=>
string(55) "https://www.st.com/resource/en/datasheet/stl13n60m6.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(10) "STL13N60M6"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.292480"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "N-CHANNEL 600 V 0.175 OHM TYP. 1"
["xl"]=>
string(12) "MDmesh™ M6"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(10) "7A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "415 毫欧 @ 3.5A，10V"
["bt_id_vgs_zdz"]=>
string(14) "4.75V @ 250µA"
["bt_vgs_sjdh"]=>
string(14) "4.75V @ 250µA"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(5) "±25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607926485"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
N-CHANNEL 600 V 0.175 OHM TYP. 1
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47445 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±25V
功率-最大值：52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL13N60M6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "48432"
["pdf_add"]=>
string(55) "https://www.st.com/resource/en/datasheet/stl10n60m6.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(10) "STL10N60M6"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.607890"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "N-CHANNEL 600 V 0.29 OHM TYP. 12"
["xl"]=>
string(12) "MDmesh™ M6"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(12) "5.5A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(24) "660 毫欧 @ 2.75A，10V"
["bt_id_vgs_zdz"]=>
string(14) "4.75V @ 250µA"
["bt_vgs_sjdh"]=>
string(14) "4.75V @ 250µA"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(5) "±25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607930180"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
N-CHANNEL 600 V 0.29 OHM TYP. 12
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 48432 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：5.5A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL10N60M6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50516"
["pdf_add"]=>
string(55) "https://www.st.com/resource/en/datasheet/stl12n60m6.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(10) "STL12N60M6"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "6.200830"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "N-CHANNEL 600 V 0.175 OHM TYP. 1"
["xl"]=>
string(12) "MDmesh™ M6"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(12) "6.4A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "490 毫欧 @ 3.2A，10V"
["bt_id_vgs_zdz"]=>
string(14) "4.75V @ 250µA"
["bt_vgs_sjdh"]=>
string(14) "4.75V @ 250µA"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(5) "±25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "48W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935397"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
N-CHANNEL 600 V 0.175 OHM TYP. 1
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50516 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：6.4A（Tc）
Vgs(最大值)：±25V
功率-最大值：48W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL12N60M6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50611"
["pdf_add"]=>
string(55) "https://www.st.com/resource/en/datasheet/stl18n60m6.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(10) "STL18N60M6"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "N-CHANNEL 600 V, 255 MOHM TYP.,"
["xl"]=>
string(12) "MDmesh™ M6"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(10) "9A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(24) "308毫欧 @ 6.5A，10V"
["bt_id_vgs_zdz"]=>
string(14) "4.75V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "16.8nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "650pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "57W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935521"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
N-CHANNEL 600 V, 255 MOHM TYP.,
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50611 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：9A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL18N60M6' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "50639"
["pdf_add"]=>
string(55) "https://www.st.com/resource/en/datasheet/stl22n60m6.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6255/497%7E8368143%7E%7E8.jpg"
["images_dir"]=>
string(29) "./images/1039/STL12HN65M2.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(10) "STL22N60M6"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "N-CHANNEL 600 V, 220 MOHM TYP.,"
["xl"]=>
string(12) "MDmesh™ M6"
["zzs"]=>
string(18) "ST/意法半导体"
["zzs_new"]=>
string(18) "ST/意法半导体"
["zzs_old"]=>
string(18) "STMicroelectronics"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "10A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "250 毫欧 @ 5A，10V"
["bt_id_vgs_zdz"]=>
string(14) "4.75V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "20nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "800pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(11) "57W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerVDFN"
["gysqjfz"]=>
string(23) "PowerFlat™（5x6）HV"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607935556"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerFlat™（5x6）HV
外壳：8-PowerVDFN
描述：
N-CHANNEL 600 V, 220 MOHM TYP.,
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50639 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：10A（Tc）
Vgs(最大值)：±25V
功率-最大值：57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STL22N60M6' ) LIMIT 1
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