STMicroelectronics公司介绍和产品目录_ST/意法半导体_意法半导体专区_授权代理商

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(74) { ["id"]=> string(3) "117" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/9a/fd/4f/c7/e4/6d/45/17/DM00051569.pdf/files/DM00051569.pdf/jcr:content/translatio" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["images_dir"]=> string(27) "./images/1039/STL3NM60N.jpg" ["ljbh"]=> string(14) "497-13520-2-ND" ["zzsbh"]=> string(10) "STL57N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 4.3A 8POWERFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(28) "4.3A（Ta），22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "69 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "110nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "4200pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），189W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL57N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 4.3A 8POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 117 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：4.3A（Ta），22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），189W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：1039117 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(74) { ["id"]=> string(4) "6138" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/group1/a2/c4/55/45/23/a3/4b/47/DM00263618/files/DM00263618.pdf/jcr:content/transla" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "STL19N60M2-ND" ["zzsbh"]=> string(10) "STL19N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET NCH 600V 11A POWERFLAT" ["xl"]=> string(12) "MDmesh™ M2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "11A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(3) "10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "21.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "791pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "90W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(7) "19N60M2" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL19N60M2复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET NCH 600V 11A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6138 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：11A（Tc） Vgs(最大值)：±25V 功率-最大值：90W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396138 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(74) { ["id"]=> string(4) "6243" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/29/44/71/b8/48/3d/45/74/CD00298827.pdf/files/CD00298827.pdf/jcr:content/translations/en.CD00298827.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11207-2-ND" ["zzsbh"]=> string(10) "STL26NM60N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "19.424620" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 600V 19A POWERFLAT" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(26) "2.7A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "185 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "60nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "1800pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "125mW（Ta），3W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL26NM60N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 19A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6243 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：2.7A（Ta），19A（Tc） Vgs(最大值)：±30V 功率-最大值：125mW（Ta），3W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396243 资料：规格书/封装库	10+: ￥29.04 3000+: ￥22.24	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "23854" ["pdf_add"]=> string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4884/STL24NM60N.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11206-2-ND" ["zzsbh"]=> string(10) "STL24NM60N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "17.324220" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 600V 16A POWERFLAT" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(26) "3.3A（Ta），16A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "215 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "46nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "1400pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL24NM60N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 16A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23854 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：3.3A（Ta），16A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103923854 资料：规格书/封装库	10+: ￥25.90 3000+: ￥19.84	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "50607" ["pdf_add"]=> string(55) "https://www.st.com/resource/en/datasheet/stl17n60m6.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL17N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "N-CHANNEL 600 V, 0.29 OHM TYP.," ["xl"]=> string(12) "MDmesh™ M6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "10A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "350 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "16.7nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "575pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "90W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935520" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL17N60M6复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： N-CHANNEL 600 V, 0.29 OHM TYP.,	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50607 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：10A（Tc） Vgs(最大值)：±25V 功率-最大值：90W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103950607 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "24517" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/66/83/87/8c/ab/0c/47/1c/DM00056210.pdf/files/DM00056210.pdf/jcr:content/translatio" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/5-PowerFlat_HV.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "497-13878-2-ND" ["zzsbh"]=> string(10) "STL38N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 22.5A PWRFLAT8X" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(28) "3.5A（Ta），22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "105 毫欧 @ 12.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "71nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "3000pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL38N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 22.5A PWRFLAT8X	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24517 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：3.5A（Ta），22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103924517 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32573" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/8c/7c/fe/dc/2d/75/49/c4/DM00150214.pdf/files/DM00150214.pdf/jcr:content/translations/en.DM00150214.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-16249-2-ND" ["zzsbh"]=> string(13) "STL25N60M2-EP" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "10.336650" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 600V 16A MLPD8X8 4L" ["xl"]=> string(15) "MDmesh™ M2-EP" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "16A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "205 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "29nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1090pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(9) "25N60M2EP" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL25N60M2-EP复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 16A MLPD8X8 4L	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32573 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：16A（Tc） Vgs(最大值)：±25V 功率-最大值：125W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932573 资料：规格书/封装库	10+: ￥15.45 3000+: ￥11.84	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32640" ["pdf_add"]=> string(81) "//media.digikey.com/pdf/Data%20Sheets/ST%20Microelectronics%20PDFS/STL16N65M5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/5-PowerFlat_HV.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "497-12270-2-ND" ["zzsbh"]=> string(10) "STL16N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 650V HV POWERFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "299 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1250pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "3W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL16N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V HV POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32640 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：12A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932640 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32668" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/90/16/3c/a9/70/91/43/d4/DM00039919.pdf/files/DM00039919.pdf/jcr:content/translations/en.DM00039919.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13449-2-ND" ["zzsbh"]=> string(10) "STL23NM50N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 500V 2.8A PWRFLT 8X8" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(26) "2.8A（Ta），14A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "210 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "1330pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL23NM50N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 500V 2.8A PWRFLT 8X8	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32668 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：500V 电流-连续漏极(id)：2.8A（Ta），14A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932668 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32671" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/5e/95/33/de/53/7d/4b/d5/DM00078624.pdf/files/DM00078624.pdf/jcr:content/translations/en.DM00078624.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-14969-2-ND" ["zzsbh"]=> string(10) "STL33N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "14.505980" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 21.5A PWRFLAT88" ["xl"]=> string(17) "MDmesh™ II Plus" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "22A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(25) "135 毫欧 @ 10.75A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "47nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1700pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "190W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(7) "33N60M2" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL33N60M2复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 21.5A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32671 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：22A（Tc） Vgs(最大值)：±25V 功率-最大值：190W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932671 资料：规格书/封装库	10+: ￥21.69 3000+: ￥16.61	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32721" ["pdf_add"]=> string(0) "" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-14538-2-ND" ["zzsbh"]=> string(10) "STL19N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "8.620760" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 12.5A PWRFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(28) "2.3A（Ta），12.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "240 毫欧 @ 7.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1240pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL19N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 12.5A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32721 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：2.3A（Ta），12.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932721	10+: ￥12.89 3000+: ￥9.87	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32800" ["pdf_add"]=> string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/405/STL18N55M5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-12979-2-ND" ["zzsbh"]=> string(10) "STL18N55M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "21.396860" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 550V 2.4A POWERFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "550V" ["dl_lxlj"]=> string(26) "2.4A（Ta），13A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "270 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1352pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "3W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL18N55M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 550V 2.4A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32800 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：550V 电流-连续漏极(id)：2.4A（Ta），13A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932800 资料：规格书/封装库	10+: ￥31.99 3000+: ￥24.50	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32824" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/14/85/4c/6e/ff/cd/4c/c1/DM00062074.pdf/files/DM00062074.pdf/jcr:content/translations/en.DM00062074.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13600-2-ND" ["zzsbh"]=> string(10) "STL22N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "11.768280" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N CH 650V 15A PWRFLT8X8HV" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "15A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "210 毫欧 @ 8.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1345pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），110W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(7) "22N65M5" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL22N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N CH 650V 15A PWRFLT8X8HV	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32824 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：15A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），110W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932824 资料：规格书/封装库	10+: ￥17.59 3000+: ￥13.47	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32844" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/dc/18/fc/de/6c/6a/44/0f/DM00057661.pdf/files/DM00057661.pdf/jcr:content/translations/en.DM00057661.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-15024-2-ND" ["zzsbh"]=> string(10) "STL34N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "17.303540" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 3.2A PWRFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(13) "22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "120 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "62.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "2700pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL34N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 3.2A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32844 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932844 资料：规格书/封装库	10+: ￥25.87 3000+: ￥19.81	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32847" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/b0/ed/64/75/35/5b/4a/6e/CD00272115.pdf/files/CD00272115.pdf/jcr:content/translations/en.CD00272115.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-10961-2-ND" ["zzsbh"]=> string(10) "STL21N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "20.379730" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 17A POWERFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "17A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "179 毫欧 @ 8.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "50nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1950pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL21N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 17A POWERFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32847 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：17A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932847 资料：规格书/封装库	10+: ￥30.47 3000+: ￥23.33	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32853" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/f9/b6/82/bf/b0/76/4a/8f/DM00098856.pdf/files/DM00098856.pdf/jcr:content/translations/en.DM00098856.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-14541-2-ND" ["zzsbh"]=> string(10) "STL31N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "15.004670" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 650V 15A PWRFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(26) "2.8A（Ta），15A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "162 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1865pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL31N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 15A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32853 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：2.8A（Ta），15A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932853 资料：规格书/封装库	10+: ￥22.43 3000+: ￥17.18	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32943" ["pdf_add"]=> string(88) "https://www.st.com/en/power-transistors/stpower-n-channel-mosfets-gt-200-v-to-700-v.html" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11205-2-ND" ["zzsbh"]=> string(11) "STL23NM60ND" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "35.144590" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 19.5A POWERFLAT" ["xl"]=> string(12) "FDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(13) "19.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "180 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "70nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "2050pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL23NM60ND复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 19.5A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32943 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：19.5A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932943 资料：规格书/封装库	10+: ￥52.54 3000+: ￥40.24	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32949" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/3b/27/b6/5d/f3/4f/49/20/DM00044786.pdf/files/DM00044786.pdf/jcr:content/translations/en.DM00044786.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13601-2-ND" ["zzsbh"]=> string(10) "STL36N55M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "22.098700" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 550V 22.5A 4PWRFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "550V" ["dl_lxlj"]=> string(13) "22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "90 毫欧 @ 16.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "2670pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL36N55M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 550V 22.5A 4PWRFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32949 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：550V 电流-连续漏极(id)：22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932949 资料：规格书/封装库	10+: ￥33.04 3000+: ￥25.30	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "35473" ["pdf_add"]=> string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4884/STL42N65M5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13602-2-ND" ["zzsbh"]=> string(10) "STL42N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "64.914130" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 4A PWRFLT8X8HV" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(24) "4A（Ta），34A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "79 毫欧 @ 16.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "100nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "4650pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），208W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL42N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 4A PWRFLT8X8HV	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35473 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：4A（Ta），34A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），208W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103935473 资料：规格书/封装库	10+: ￥97.05 3000+: ￥74.33	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "35839" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/53/0a/4f/74/dd/87/4c/5b/DM00029960.pdf/files/DM00029960.pdf/jcr:content/translations/en.DM00029960.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11845-2-ND" ["zzsbh"]=> string(10) "STL13NM60N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "9.355680" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 600V 10A POWERFLAT" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "10A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "385 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "30nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "790pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "3W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL13NM60N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 10A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35839 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：10A（Tc） Vgs(最大值)：±30V 功率-最大值：3W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103935839 资料：规格书/封装库	10+: ￥13.99 3000+: ￥10.71	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(74) { ["id"]=> string(3) "117" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/9a/fd/4f/c7/e4/6d/45/17/DM00051569.pdf/files/DM00051569.pdf/jcr:content/translatio" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(80) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/8PowerVDFN.jpg" ["images_dir"]=> string(27) "./images/1039/STL3NM60N.jpg" ["ljbh"]=> string(14) "497-13520-2-ND" ["zzsbh"]=> string(10) "STL57N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 4.3A 8POWERFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(28) "4.3A（Ta），22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "69 毫欧 @ 20A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "110nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "4200pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），189W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL57N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 4.3A 8POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 117 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：4.3A（Ta），22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），189W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：1039117 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(74) { ["id"]=> string(4) "6138" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/group1/a2/c4/55/45/23/a3/4b/47/DM00263618/files/DM00263618.pdf/jcr:content/transla" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["images_dir"]=> string(0) "" ["ljbh"]=> string(13) "STL19N60M2-ND" ["zzsbh"]=> string(10) "STL19N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET NCH 600V 11A POWERFLAT" ["xl"]=> string(12) "MDmesh™ M2" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "11A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(3) "10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "21.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "791pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "90W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(7) "19N60M2" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL19N60M2复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET NCH 600V 11A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6138 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：11A（Tc） Vgs(最大值)：±25V 功率-最大值：90W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396138 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(74) { ["id"]=> string(4) "6243" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/29/44/71/b8/48/3d/45/74/CD00298827.pdf/files/CD00298827.pdf/jcr:content/translations/en.CD00298827.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11207-2-ND" ["zzsbh"]=> string(10) "STL26NM60N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "19.424620" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 600V 19A POWERFLAT" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(26) "2.7A（Ta），19A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "185 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "60nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(12) "1800pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "125mW（Ta），3W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL26NM60N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 19A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6243 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：2.7A（Ta），19A（Tc） Vgs(最大值)：±30V 功率-最大值：125mW（Ta），3W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396243 资料：规格书/封装库	10+: ￥29.04 3000+: ￥22.24	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "23854" ["pdf_add"]=> string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4884/STL24NM60N.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11206-2-ND" ["zzsbh"]=> string(10) "STL24NM60N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "17.324220" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 600V 16A POWERFLAT" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(26) "3.3A（Ta），16A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "215 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "46nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "1400pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL24NM60N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 16A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 23854 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：3.3A（Ta），16A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103923854 资料：规格书/封装库	10+: ￥25.90 3000+: ￥19.84	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "50607" ["pdf_add"]=> string(55) "https://www.st.com/resource/en/datasheet/stl17n60m6.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "STL17N60M6" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "N-CHANNEL 600 V, 0.29 OHM TYP.," ["xl"]=> string(12) "MDmesh™ M6" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "10A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "350 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "16.7nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "575pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "90W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935520" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL17N60M6复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： N-CHANNEL 600 V, 0.29 OHM TYP.,	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50607 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：10A（Tc） Vgs(最大值)：±25V 功率-最大值：90W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103950607 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "24517" ["pdf_add"]=> string(150) "http://www.st.com/content/ccc/resource/technical/document/datasheet/66/83/87/8c/ab/0c/47/1c/DM00056210.pdf/files/DM00056210.pdf/jcr:content/translatio" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/5-PowerFlat_HV.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "497-13878-2-ND" ["zzsbh"]=> string(10) "STL38N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 22.5A PWRFLAT8X" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(28) "3.5A（Ta），22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "105 毫欧 @ 12.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "71nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "3000pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL38N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 22.5A PWRFLAT8X	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 24517 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：3.5A（Ta），22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103924517 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32573" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/8c/7c/fe/dc/2d/75/49/c4/DM00150214.pdf/files/DM00150214.pdf/jcr:content/translations/en.DM00150214.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-16249-2-ND" ["zzsbh"]=> string(13) "STL25N60M2-EP" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "10.336650" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 600V 16A MLPD8X8 4L" ["xl"]=> string(15) "MDmesh™ M2-EP" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "16A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "205 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(14) "4.75V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "29nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1090pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "125W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(9) "25N60M2EP" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL25N60M2-EP复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 16A MLPD8X8 4L	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32573 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：16A（Tc） Vgs(最大值)：±25V 功率-最大值：125W（Tc）工作温度：-55°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932573 资料：规格书/封装库	10+: ￥15.45 3000+: ￥11.84	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32640" ["pdf_add"]=> string(81) "//media.digikey.com/pdf/Data%20Sheets/ST%20Microelectronics%20PDFS/STL16N65M5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Renders/STMicro_Renders/5-PowerFlat_HV.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(14) "497-12270-2-ND" ["zzsbh"]=> string(10) "STL16N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 650V HV POWERFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "12A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "299 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1250pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "3W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL16N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V HV POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32640 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：12A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932640 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32668" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/90/16/3c/a9/70/91/43/d4/DM00039919.pdf/files/DM00039919.pdf/jcr:content/translations/en.DM00039919.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13449-2-ND" ["zzsbh"]=> string(10) "STL23NM50N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 500V 2.8A PWRFLT 8X8" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(26) "2.8A（Ta），14A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "210 毫欧 @ 7A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "1330pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL23NM50N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 500V 2.8A PWRFLT 8X8	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32668 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：500V 电流-连续漏极(id)：2.8A（Ta），14A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932668 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32671" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/5e/95/33/de/53/7d/4b/d5/DM00078624.pdf/files/DM00078624.pdf/jcr:content/translations/en.DM00078624.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(60) "//media.digikey.com/Renders/STMicro%20Renders/8PowerVDFN.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-14969-2-ND" ["zzsbh"]=> string(10) "STL33N60M2" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "14.505980" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 21.5A PWRFLAT88" ["xl"]=> string(17) "MDmesh™ II Plus" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "22A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(25) "135 毫欧 @ 10.75A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "47nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1700pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "190W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(7) "33N60M2" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL33N60M2复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 21.5A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32671 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：22A（Tc） Vgs(最大值)：±25V 功率-最大值：190W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932671 资料：规格书/封装库	10+: ￥21.69 3000+: ￥16.61	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32721" ["pdf_add"]=> string(0) "" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-14538-2-ND" ["zzsbh"]=> string(10) "STL19N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "8.620760" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 12.5A PWRFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(28) "2.3A（Ta），12.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "240 毫欧 @ 7.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1240pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "2.8W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL19N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 12.5A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32721 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：2.3A（Ta），12.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932721	10+: ￥12.89 3000+: ￥9.87	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32800" ["pdf_add"]=> string(73) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/405/STL18N55M5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-12979-2-ND" ["zzsbh"]=> string(10) "STL18N55M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "21.396860" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 550V 2.4A POWERFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "550V" ["dl_lxlj"]=> string(26) "2.4A（Ta），13A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "270 毫欧 @ 6A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1352pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "3W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL18N55M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 550V 2.4A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32800 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：550V 电流-连续漏极(id)：2.4A（Ta），13A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932800 资料：规格书/封装库	10+: ￥31.99 3000+: ￥24.50	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32824" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/14/85/4c/6e/ff/cd/4c/c1/DM00062074.pdf/files/DM00062074.pdf/jcr:content/translations/en.DM00062074.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13600-2-ND" ["zzsbh"]=> string(10) "STL22N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "11.768280" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N CH 650V 15A PWRFLT8X8HV" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "15A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "210 毫欧 @ 8.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1345pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），110W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(7) "22N65M5" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL22N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N CH 650V 15A PWRFLT8X8HV	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32824 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：15A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），110W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932824 资料：规格书/封装库	10+: ￥17.59 3000+: ￥13.47	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32844" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/dc/18/fc/de/6c/6a/44/0f/DM00057661.pdf/files/DM00057661.pdf/jcr:content/translations/en.DM00057661.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-15024-2-ND" ["zzsbh"]=> string(10) "STL34N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "17.303540" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 3.2A PWRFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(13) "22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "120 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(12) "62.5nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "2700pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL34N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 3.2A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32844 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932844 资料：规格书/封装库	10+: ￥25.87 3000+: ￥19.81	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32847" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/b0/ed/64/75/35/5b/4a/6e/CD00272115.pdf/files/CD00272115.pdf/jcr:content/translations/en.CD00272115.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-10961-2-ND" ["zzsbh"]=> string(10) "STL21N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "20.379730" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 650V 17A POWERFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "17A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "179 毫欧 @ 8.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "50nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1950pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL21N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 17A POWERFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32847 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：17A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932847 资料：规格书/封装库	10+: ￥30.47 3000+: ￥23.33	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32853" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/f9/b6/82/bf/b0/76/4a/8f/DM00098856.pdf/files/DM00098856.pdf/jcr:content/translations/en.DM00098856.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-14541-2-ND" ["zzsbh"]=> string(10) "STL31N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "15.004670" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 650V 15A PWRFLAT88" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(26) "2.8A（Ta），15A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "162 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "45nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "1865pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），125W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL31N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 15A PWRFLAT88	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32853 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：2.8A（Ta），15A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），125W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932853 资料：规格书/封装库	10+: ￥22.43 3000+: ￥17.18	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32943" ["pdf_add"]=> string(88) "https://www.st.com/en/power-transistors/stpower-n-channel-mosfets-gt-200-v-to-700-v.html" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11205-2-ND" ["zzsbh"]=> string(11) "STL23NM60ND" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "35.144590" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N-CH 600V 19.5A POWERFLAT" ["xl"]=> string(12) "FDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(13) "19.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "180 毫欧 @ 10A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "70nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(12) "2050pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL23NM60ND复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 19.5A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32943 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：19.5A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932943 资料：规格书/封装库	10+: ￥52.54 3000+: ￥40.24	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "32949" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/3b/27/b6/5d/f3/4f/49/20/DM00044786.pdf/files/DM00044786.pdf/jcr:content/translations/en.DM00044786.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13601-2-ND" ["zzsbh"]=> string(10) "STL36N55M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "22.098700" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 550V 22.5A 4PWRFLAT" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "550V" ["dl_lxlj"]=> string(13) "22.5A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "90 毫欧 @ 16.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "2670pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(27) "2.8W（Ta），150W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL36N55M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 550V 22.5A 4PWRFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32949 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：550V 电流-连续漏极(id)：22.5A（Tc） Vgs(最大值)：±25V 功率-最大值：2.8W（Ta），150W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103932949 资料：规格书/封装库	10+: ￥33.04 3000+: ￥25.30	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "35473" ["pdf_add"]=> string(74) "//mm.digikey.com/Volume0/opasdata/d220001/medias/docus/4884/STL42N65M5.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/Renders/STMicro%20Renders/5-PowerFlat%20HV.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-13602-2-ND" ["zzsbh"]=> string(10) "STL42N65M5" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(4) "3000" ["cfkc"]=> string(1) "0" ["dj"]=> string(9) "64.914130" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "MOSFET N-CH 650V 4A PWRFLT8X8HV" ["xl"]=> string(11) "MDmesh™ V" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(24) "4A（Ta），34A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "79 毫欧 @ 16.5A，10V" ["bt_id_vgs_zdz"]=> string(11) "5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "100nC @ 10V" ["vgs_zdz"]=> string(5) "±25V" ["bt_vds_srdr"]=> string(13) "4650pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(25) "3W（Ta），208W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL42N65M5复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 650V 4A PWRFLT8X8HV	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35473 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：650V 电流-连续漏极(id)：4A（Ta），34A（Tc） Vgs(最大值)：±25V 功率-最大值：3W（Ta），208W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103935473 资料：规格书/封装库	10+: ￥97.05 3000+: ￥74.33	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车
array(74) { ["id"]=> string(5) "35839" ["pdf_add"]=> string(171) "https://www.st.com/content/ccc/resource/technical/document/datasheet/53/0a/4f/74/dd/87/4c/5b/DM00029960.pdf/files/DM00029960.pdf/jcr:content/translations/en.DM00029960.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(65) "//media.digikey.com/Renders/STMicro%20Renders/PowerFLAT%208X8.jpg" ["images"]=> string(85) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4885/497%7E8222871%7E%7E8.JPG" ["images_dir"]=> string(28) "./images/1039/STL26NM60N.JPG" ["ljbh"]=> string(14) "497-11845-2-ND" ["zzsbh"]=> string(10) "STL13NM60N" ["zddgs"]=> string(4) "3000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "9.355680" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 600V 10A POWERFLAT" ["xl"]=> string(12) "MDmesh™ II" ["zzs"]=> string(18) "ST/意法半导体" ["zzs_new"]=> string(18) "ST/意法半导体" ["zzs_old"]=> string(18) "STMicroelectronics" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "10A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "385 毫欧 @ 5A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "30nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(11) "790pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(24) "3W（Ta），90W（Tc）" ["gzwd"]=> string(14) "150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerVDFN" ["gysqjfz"]=> string(23) "PowerFlat™（8x8）HV" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "3000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "4" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： STL13NM60N复制状态：在售修改品牌： ST/意法半导体复制封装：PowerFlat™（8x8）HV 外壳：8-PowerVDFN 描述： MOSFET N-CH 600V 10A POWERFLAT	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35839 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：600V 电流-连续漏极(id)：10A（Tc） Vgs(最大值)：±30V 功率-最大值：3W（Ta），90W（Tc）工作温度：150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103935839 资料：规格书/封装库	10+: ￥13.99 3000+: ￥10.71	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 3000个/ 修改个个总额：	加入购物车

今日热搜

业务介绍

购物指南

联系我们

关注我们

销售在线

销售在线

工程师在线

工程师在线

电话咨询