array(74) {
["id"]=>
string(5) "45871"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/77149/siss50dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS50DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET N-CH 45-V PPAK 1212-8S"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "45V"
["dl_lxlj"]=>
string(28) "29.7A（Ta），108A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.83毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.3V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "70nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "4000pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "5W（Ta），65.7W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593189"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 45-V PPAK 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45871 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：45V
电流-连续漏极(id)：29.7A（Ta），108A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：5W（Ta），65.7W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS50DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45900"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/75322/siss61dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS61DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.308330"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(28) "MOSFET P-CH 20V PPAK 1212-8S"
["xl"]=>
string(19) "TrenchFET® Gen III"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(30) "30.9A（Ta），111.9A（Tc）"
["qddy"]=>
string(11) "1.8V，4.5V"
["bt_id_vgs_rds"]=>
string(23) "3.5 毫欧 @ 15A，4.5V"
["bt_id_vgs_zdz"]=>
string(14) "900mV @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "231nC @ 10V"
["vgs_zdz"]=>
string(4) "±8V"
["bt_vds_srdr"]=>
string(12) "8740pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "5W（Ta），65.8W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593289"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET P-CH 20V PPAK 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45900 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：30.9A（Ta），111.9A（Tc）
Vgs(最大值)：±8V
功率-最大值：5W（Ta），65.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS61DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45902"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/71591/siss63dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS63DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.997630"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET P-CH 20V POWERPAK 1212-8S"
["xl"]=>
string(19) "TrenchFET® Gen III"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(30) "35.1A（Ta），127.5A（Tc）"
["qddy"]=>
string(10) "2.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "2.7 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "236nC @ 8V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "7080pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "5W（Ta），65.8W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593301"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET P-CH 20V POWERPAK 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45902 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：35.1A（Ta），127.5A（Tc）
Vgs(最大值)：±12V
功率-最大值：5W（Ta），65.8W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS63DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45935"
["pdf_add"]=>
string(46) "http://www.vishay.com/docs/77179/siss32ldn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISS32LDN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CH 80V POWERPAK 1212-8S"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(29) "17，4A（Ta），63A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.2 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "57nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2550pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "5W（Ta），65.7W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593423"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 80V POWERPAK 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45935 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：17，4A（Ta），63A（Tc）
Vgs(最大值)：±20V
功率-最大值：5W（Ta），65.7W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS32LDN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45939"
["pdf_add"]=>
string(46) "http://www.vishay.com/docs/71592/siss22ldn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISS22LDN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CH 60V POWERPAK 1212-8S"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(29) "25.5A（Ta），92.5A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "3.65 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "56nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2540pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "5W（Ta），65.7W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593423"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 60V POWERPAK 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45939 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：25.5A（Ta），92.5A（Tc）
Vgs(最大值)：±20V
功率-最大值：5W（Ta），65.7W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS22LDN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45949"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79691/siss30ldn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISS30LDN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.163710"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CH 80V 55.5A PP 1212-8S"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(27) "16A（Ta），55.5A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.5 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "50nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2070pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "4.8W（Ta），57W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593458"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 80V 55.5A PP 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45949 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：16A（Ta），55.5A（Tc）
Vgs(最大值)：±20V
功率-最大值：4.8W（Ta），57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS30LDN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45950"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/76797/siss26ldn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(78) "https://media.digikey.com/renders/Vishay%20Siliconix%20Renders/742;6008;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISS26LDN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CH 60V 81.2A PP 1212-8S"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(29) "23.7A（Ta），81.2A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.3 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "48nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1980pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "4.8W（Ta），57W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593458"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 60V 81.2A PP 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45950 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：23.7A（Ta），81.2A（Tc）
Vgs(最大值)：±20V
功率-最大值：4.8W（Ta），57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS26LDN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45951"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/77425/siss42ldn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISS42LDN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.876240"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(31) "MOSFET N-CH 100V 39A PP 1212-8S"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(27) "11.3A（Ta），39A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "14.9 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "48nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "2058pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "4.8W（Ta），57W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593459"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 100V 39A PP 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45951 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：11.3A（Ta），39A（Tc）
Vgs(最大值)：±20V
功率-最大值：4.8W（Ta），57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS42LDN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45955"
["pdf_add"]=>
string(1) "-"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISS30ADN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(17) "N-CHANNEL FET 80V"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(33) "15，9A（Ta），54，7A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.9 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "30nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1295pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "4.8W（Ta），57W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593482"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
N-CHANNEL FET 80V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45955 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：15，9A（Ta），54，7A（Tc）
Vgs(最大值)：±20V
功率-最大值：4.8W（Ta），57W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS30ADN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45969"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/75772/sis184dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;5882;DN;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SIS184DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CHAN 60V POWERPAK 1212-"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(29) "17.4A（Ta），65.3A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.8 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "32nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1490pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.7W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593542"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CHAN 60V POWERPAK 1212-
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45969 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：17.4A（Ta），65.3A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIS184DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45976"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/76969/siss73dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(78) "https://media.digikey.com/renders/Vishay%20Siliconix%20Renders/742;6008;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS73DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(26) "MOSFET P-CH 150V PP 1212-8"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "150V"
["dl_lxlj"]=>
string(28) "4.4A（Ta），16.2A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "125 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "22nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "719pF @ 75V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(22) "5.1W (Ta)，65.8W (Tc)"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593567"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET P-CH 150V PP 1212-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45976 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：150V
电流-连续漏极(id)：4.4A（Ta），16.2A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.1W (Ta)，65.8W (Tc)
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS73DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45977"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/77036/siss60dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS60DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.730630"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CH 30V W/SCHOTTKY PP 12"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(30) "50.1A（Ta），181.8A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "1.31 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "85.5nC @ 10V"
["vgs_zdz"]=>
string(11) "+16V，-12V"
["bt_vds_srdr"]=>
string(12) "3960pF @ 15V"
["fetgn"]=>
string(27) "肖特基二极管（体）"
["gn_zdz"]=>
string(22) "5.1W (Ta)，65.8W (Tc)"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593567"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 30V W/SCHOTTKY PP 12
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45977 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：50.1A（Ta），181.8A（Tc）
Vgs(最大值)：+16V，-12V
功率-最大值：5.1W (Ta)，65.8W (Tc)
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS60DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45978"
["pdf_add"]=>
string(75) "https://www.waldom.com/upload/parts/datasheets/mf-tf/tf-siss66dn-t1-ge3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS66DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.730630"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CH 30V W/SCHOTTKY PP 12"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(30) "49.1A（Ta），178.3A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "1.38 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(12) "85.5nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "3327pF @ 15V"
["fetgn"]=>
string(27) "肖特基二极管（体）"
["gn_zdz"]=>
string(22) "5.1W (Ta)，65.8W (Tc)"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593567"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 30V W/SCHOTTKY PP 12
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45978 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：49.1A（Ta），178.3A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：5.1W (Ta)，65.8W (Tc)
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS66DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46003"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/77851/siss32adn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISS32ADN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.185910"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(17) "N-CHANNEL FET 80V"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(29) "17，4A（Ta），63A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.3 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.6V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "36nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1520pF @ 40V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "5W（Ta），65.7W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593652"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
N-CHANNEL FET 80V
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46003 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：17，4A（Ta），63A（Tc）
Vgs(最大值)：±20V
功率-最大值：5W（Ta），65.7W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS32ADN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46018"
["pdf_add"]=>
string(1) "-"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS80DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(27) "N-CHANNEL 20-V (D-S) MOSFET"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(28) "58.3A（Ta），210A（Tc）"
["qddy"]=>
string(10) "2.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "0.92 欧姆 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "122nC @ 10V"
["vgs_zdz"]=>
string(10) "+12V，-8V"
["bt_vds_srdr"]=>
string(12) "6450pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(24) "5W（Ta），65W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593713"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
N-CHANNEL 20-V (D-S) MOSFET
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46018 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：58.3A（Ta），210A（Tc）
Vgs(最大值)：+12V，-8V
功率-最大值：5W（Ta），65W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS80DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47065"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/77350/siss94dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6008%7EDN%7E8.jpg"
["images_dir"]=>
string(34) "./images/1039/SIS439DNT-T1-GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS94DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.085310"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET N-CH 200V PPAK 1212-8S"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "200V"
["dl_lxlj"]=>
string(28) "5.4A（Ta），19.5A（Tc）"
["qddy"]=>
string(10) "7.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "75 毫欧 @ 5.4A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "21nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "350pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(22) "5.1W (Ta)，65.8W (Tc)"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607652346"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET N-CH 200V PPAK 1212-8S
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47065 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：200V
电流-连续漏极(id)：5.4A（Ta），19.5A（Tc）
Vgs(最大值)：±20V
功率-最大值：5.1W (Ta)，65.8W (Tc)
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS94DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47250"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/77029/siss05dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(78) "https://media.digikey.com/renders/Vishay%20Siliconix%20Renders/742;6008;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SISS05DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(25) "MOSFET P-CH 30V PP 1212-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(28) "29.4A（Ta），108A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.5 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "115nC @ 10V"
["vgs_zdz"]=>
string(11) "+16V，-20V"
["bt_vds_srdr"]=>
string(12) "4930pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "5W（Ta），65.7W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(18) "PowerPAK® 1212-8S"
["gysqjfz"]=>
string(18) "PowerPAK® 1212-8S"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607925364"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8S
外壳：PowerPAK® 1212-8S
描述：
MOSFET P-CH 30V PP 1212-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47250 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：29.4A（Ta），108A（Tc）
Vgs(最大值)：+16V，-20V
功率-最大值：5W（Ta），65.7W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISS05DN-T1-GE3' ) LIMIT 1
|
