array(74) {
["id"]=>
string(5) "45770"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79330/sish108dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH108DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.309620"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CHAN 20 V POWERPAK 1212"
["xl"]=>
string(18) "TrenchFET® Gen II"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(11) "14A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.9 毫欧 @ 22A，10V"
["bt_id_vgs_zdz"]=>
string(11) "2V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "30nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±16V"
["bt_vds_srdr"]=>
string(5) "±16V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "1.5W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607592681"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CHAN 20 V POWERPAK 1212
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45770 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：14A（Ta）
Vgs(最大值)：±16V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH108DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45817"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/79563/sish615adn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SISH615ADN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "1.631430"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET P-CHAN 20 V POWERPAK 1212"
["xl"]=>
string(19) "TrenchFET® Gen III"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(29) "22，1A（Ta），35A（Tc）"
["qddy"]=>
string(10) "2.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.4 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "183nC @ 10V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "5590pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.7W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607592875"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET P-CHAN 20 V POWERPAK 1212
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45817 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：22，1A（Ta），35A（Tc）
Vgs(最大值)：±12V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH615ADN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45822"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79568/sish625dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH625DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.025350"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET P-CHAN 30 V POWERPAK 1212"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(29) "17，3A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "7 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "126nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "4427pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.7W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607592922"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET P-CHAN 30 V POWERPAK 1212
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45822 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：17，3A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH625DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45828"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75708/sisha14dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISHA14DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.024330"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(25) "MOSFET N-CH 30V PP 1212-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(27) "19.7A（Ta），20A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "5.1 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "29nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "1450pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(29) "3.57W（Ta），26.5W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607592934"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 30V PP 1212-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45828 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：19.7A（Ta），20A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.57W（Ta），26.5W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA14DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45831"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75656/sish472dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH472DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.078020"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET N-CH 30V POWERPAK 1212"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "15A（Ta），20A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "8.9 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "30nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "997pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.5W（Ta），28W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607592946"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 30V POWERPAK 1212
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45831 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：15A（Ta），20A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.5W（Ta），28W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH472DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45844"
["pdf_add"]=>
string(77) "https://www.waldom.com/upload/parts/datasheets/mf-tf/tf-sish114adn-t1-ge3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SISH114ADN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.117110"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET N-CH 30V POWERPAK 1212"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "18A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.5 毫欧 @ 18A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "32nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1230pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.7W（Ta），39W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593020"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 30V POWERPAK 1212
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45844 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：18A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.7W（Ta），39W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH114ADN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45851"
["pdf_add"]=>
string(77) "https://www.waldom.com/upload/parts/datasheets/mf-tf/tf-sisha12adn-t1-ge3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(17) "SISHA12ADN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.619990"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(25) "MOSFET N-CH 30V PP 1212-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "22A（Ta），25A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.3 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "45nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "2070pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.5W（Ta），28W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593091"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 30V PP 1212-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45851 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta），25A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.5W（Ta），28W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA12ADN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45872"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75900/sish617dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/742%3B6008%3B%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH617DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.877060"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET P-CHAN 30V POWERPAK 1212-"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(27) "13.9A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(25) "12.3 毫欧 @ 13.9A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "59nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "1800pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.7W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593189"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET P-CHAN 30V POWERPAK 1212-
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45872 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：13.9A（Ta），35A（Tc）
Vgs(最大值)：±25V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH617DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45891"
["pdf_add"]=>
string(76) "https://www.waldom.com/upload/parts/datasheets/mf-tf/tf-sisha04dn-t1-ge3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISHA04DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.200060"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(25) "MOSFET N-CH 30V PP 1212-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(27) "30.9A（Ta），40A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "2.15 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "77nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "3595pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.7W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593265"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 30V PP 1212-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45891 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：30.9A（Ta），40A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA04DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45915"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79280/sish410dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/863/742%3BPowerPAK1212-8SH%3BDN%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH410DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.547810"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(27) "MOSFET N-CHAN PPAK 1212-8SH"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(25) "22A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "4.8 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "41nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1600pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.8W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593362"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CHAN PPAK 1212-8SH
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45915 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：22A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH410DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45972"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79345/sish112dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH112DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.683710"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET N-CH 30V PPAK 1212-8SH"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(13) "11.3A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "7.5 毫欧 @ 17.8A，10V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "27nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(12) "2610pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "1.5W（Tc）"
["gzwd"]=>
string(23) "-50°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593555"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 30V PPAK 1212-8SH
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45972 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：11.3A（Tc）
Vgs(最大值)：±12V
功率-最大值：1.5W（Tc）
工作温度：-50°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH112DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "45982"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79230/sish110dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH110DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "4.651490"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET N-CH 20V PPAK 1212-8SH"
["xl"]=>
string(18) "TrenchFET® Gen II"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(13) "13.5A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "5.3 毫欧 @ 21.1A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "21nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(5) "±20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "1.5W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "6000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593580"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 20V PPAK 1212-8SH
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 45982 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：13.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
6000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH110DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46013"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79358/sish106dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/863/742%3BPowerPAK1212-8SH%3BDN%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH106DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.126980"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(27) "MOSFET N-CHAN PPAK 1212-8SH"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(13) "12.5A（Ta）"
["qddy"]=>
string(11) "2.5V，4.5V"
["bt_id_vgs_rds"]=>
string(25) "6.2 毫欧 @ 19.5A，4.5V"
["bt_id_vgs_zdz"]=>
string(13) "1.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "27nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±12V"
["bt_vds_srdr"]=>
string(5) "±12V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "1.5W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593677"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CHAN PPAK 1212-8SH
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46013 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：12.5A（Ta）
Vgs(最大值)：±12V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH106DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46020"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79240/sish116dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH116DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "5.795220"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET N-CH 40V PPAK 1212-8SH"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(13) "10.5A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "7.8 毫欧 @ 16.4A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "23nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(5) "±20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "1.5W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593724"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 40V PPAK 1212-8SH
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46020 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：10.5A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH116DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46984"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/77305/sish101dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(74) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/742;6062;DN;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH101DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET P-CH 30V POWERPAK 1212"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(27) "16.9A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "7.2 毫欧 @ 15A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "102nC @ 10V"
["vgs_zdz"]=>
string(5) "±25V"
["bt_vds_srdr"]=>
string(12) "3595pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.7W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607651989"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET P-CH 30V POWERPAK 1212
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46984 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：16.9A（Ta），35A（Tc）
Vgs(最大值)：±25V
功率-最大值：3.7W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH101DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47039"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75341/sish407dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH407DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.325750"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(29) "MOSFET P-CH 20V POWERPAK 1212"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "20V"
["dl_lxlj"]=>
string(27) "15.4A（Ta），25A（Tc）"
["qddy"]=>
string(11) "1.8V，4.5V"
["bt_id_vgs_rds"]=>
string(25) "9.5 毫欧 @ 15.3A，4.5V"
["bt_id_vgs_zdz"]=>
string(11) "1V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "93.8nC @ 8V"
["vgs_zdz"]=>
string(4) "±8V"
["bt_vds_srdr"]=>
string(12) "2760pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.6W（Ta），33W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607652230"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET P-CH 20V POWERPAK 1212
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47039 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：20V
电流-连续漏极(id)：15.4A（Ta），25A（Tc）
Vgs(最大值)：±8V
功率-最大值：3.6W（Ta），33W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH407DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47207"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/79242/sish434dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(95) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/863/742%3BPowerPAK1212-8SH%3BDN%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH434DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.809210"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(31) "MOSFET N-CHAN 40V PPAK 1212-8SH"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(27) "17.6A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "7.6 毫欧 @ 16.2A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "40nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1530pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.8W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607925059"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CHAN 40V PPAK 1212-8SH
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47207 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：17.6A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH434DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "49728"
["pdf_add"]=>
string(76) "https://www.waldom.com/upload/parts/datasheets/mf-tf/tf-sisha10dn-t1-ge3.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(84) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6062%7EDN%7E8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISHA10DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.869040"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(25) "MOSFET N-CH 30V PP 1212-8"
["xl"]=>
string(18) "TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "25A（Ta），30A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.7 毫欧 @ 10A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "51nC @ 10V"
["vgs_zdz"]=>
string(11) "+20V，-16V"
["bt_vds_srdr"]=>
string(12) "2425pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.6W（Ta），39W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607934138"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CH 30V PP 1212-8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49728 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：25A（Ta），30A（Tc）
Vgs(最大值)：+20V，-16V
功率-最大值：3.6W（Ta），39W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISHA10DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "49772"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75903/sish129dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(78) "https://media.digikey.com/renders/Vishay%20Siliconix%20Renders/742;6008;;8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH129DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET P-CHAN 30V POWERPAK 1212-"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(27) "14.4A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(25) "11.4 毫欧 @ 14.4A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.8V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "71nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3345pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(28) "3.8W（Ta），52.1W（Tc）"
["gzwd"]=>
string(23) "-50°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607934180"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET P-CHAN 30V POWERPAK 1212-
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49772 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：14.4A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52.1W（Tc）
工作温度：-50°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH129DN-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "49779"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/75897/sish402dn.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/742%3B6008%3B%3B8.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SISH402DN-T1-GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "3.171450"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1736997689"
["ms"]=>
string(32) "MOSFET N-CHAN 30V POWERPAK 1212-"
["xl"]=>
string(11) "TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "19A（Ta），35A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "6 毫欧 @ 19A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "42nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "1700pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "3.8W（Ta），52W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(19) "PowerPAK® 1212-8SH"
["gysqjfz"]=>
string(19) "PowerPAK® 1212-8SH"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607934193"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 1212-8SH
外壳：PowerPAK® 1212-8SH
描述：
MOSFET N-CHAN 30V POWERPAK 1212-
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 49779 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：19A（Ta），35A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），52W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SISH402DN-T1-GE3' ) LIMIT 1
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