array(74) {
["id"]=>
string(4) "6219"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91773/sihh14n65ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH14N65EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH14N65EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "20.115110"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 650V 15A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "15A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "271毫欧 @ 7A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "98nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1749pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "156W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 650V 15A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6219 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：15A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥30.07
3000+:
￥23.03
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N65EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6259"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91739/sihh21n65ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH21N65EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH21N65EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "25.293770"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 650V 19.8A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(13) "19.8A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "180 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "102nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2396pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "156W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 650V 19.8A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6259 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：19.8A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥37.81
3000+:
￥28.96
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N65EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20204"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/91586/sihh11n65e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(22) "SIHH11N65E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH11N65E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "16.207860"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 650V 12A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "12A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "363毫欧 @ 6A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "68nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1257pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "130W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 650V 12A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20204 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：12A（Tc）
Vgs(最大值)：±30V
功率-最大值：130W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥24.23
3000+:
￥18.56
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N65E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20208"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91786/sihh11n65ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH11N65EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH11N65EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "16.404260"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 600V 24A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "11A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "382毫欧 @ 6A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "70nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1243pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "130W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 600V 24A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20208 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：11A（Tc）
Vgs(最大值)：±30V
功率-最大值：130W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥24.52
3000+:
￥18.78
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N65EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20216"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91778/sihh14n60ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH14N60EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH14N60EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "17.561960"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 600V 15A POWERPAK8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "15A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "266 毫欧 @ 7A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "84nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1449pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "147W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 600V 15A POWERPAK8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20216 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：15A（Tc）
Vgs(最大值)：±30V
功率-最大值：147W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥26.26
3000+:
￥20.11
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N60EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20233"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91744/sihh21n60ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH21N60EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH21N60EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "21.551900"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 600V 19A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "19A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "185 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "86nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2035pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "174W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 600V 19A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20233 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：19A（Tc）
Vgs(最大值)：±30V
功率-最大值：174W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥32.22
3000+:
￥24.68
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N60EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20241"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91777/sihh26n60ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH26N60EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH26N60EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "27.702210"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 600V 24A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "24A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "141毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "120nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2744pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "202W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 600V 24A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20241 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：24A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥41.41
3000+:
￥31.72
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH26N60EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20244"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/91784/sihh24n65e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(22) "SIHH24N65E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH24N65E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "28.136350"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 650V 23A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "23A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "150 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "116nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2814pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "202W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 650V 23A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20244 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：23A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥42.06
3000+:
￥32.22
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH24N65E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "20253"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91783/sihh24n65ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(74) "//media.digikey.com/Photos/Vishay%20Siliconix%20Photos/MFG_PowerPAK8x8.JPG"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH24N65EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH24N65EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "32.064270"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 650V 23A POWERPAK"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "23A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "158 毫欧 @ 12A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "17nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2780pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "202W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 650V 23A POWERPAK
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20253 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：23A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥47.94
3000+:
￥36.71
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH24N65EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "32748"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/91578/sihh26n60e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(22) "SIHH26N60E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH26N60E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "20.838680"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 600V 25A POWERPAK8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "25A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "135 毫欧 @ 13A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "116nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2815pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "202W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 600V 25A POWERPAK8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32748 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：25A（Tc）
Vgs(最大值)：±30V
功率-最大值：202W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥31.15
3000+:
￥23.86
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH26N60E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35190"
["pdf_add"]=>
string(47) "http://www.vishay.com/docs/91651/sihh11n60e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(100) "https://www.chenkeiot.com/Public/imagesmk/Renders/Vishay_Siliconix_Renders/E-Series-Power-MOSFET.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(22) "SIHH11N60E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH11N60E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 600V 11A POWERPAK8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "11A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "339 毫欧 @ 5.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "62nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1076pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "114W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 600V 11A POWERPAK8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35190 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：11A（Tc）
Vgs(最大值)：±30V
功率-最大值：114W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N60E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35233"
["pdf_add"]=>
string(49) "https://www.vishay.com/docs/91726/sihh11n60ef.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(23) "SIHH11N60EF-T1-GE3TR-ND"
["zzsbh"]=>
string(18) "SIHH11N60EF-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "14.760730"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 600V 11A POWERPAK8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "11A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "357 毫欧 @ 5.5A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "62nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1078pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "114W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 600V 11A POWERPAK8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35233 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：11A（Tc）
Vgs(最大值)：±30V
功率-最大值：114W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥22.07
3000+:
￥16.90
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH11N60EF-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35249"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/91584/sihh21n60e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(22) "SIHH21N60E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH21N60E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "16.125170"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 600V 20A POWERPAK8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "20A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "176 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "83nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2015pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "104W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 600V 20A POWERPAK8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35249 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：20A（Tc）
Vgs(最大值)：±30V
功率-最大值：104W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥24.11
3000+:
￥18.46
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N60E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35265"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/91730/sihh14n65e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(22) "SIHH14N65E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH14N65E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "19.567270"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CH 650V 15A PWRPAK 8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(11) "15A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "260 毫欧 @ 7A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "96nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1712pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "156W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 650V 15A PWRPAK 8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35265 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：15A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥29.25
3000+:
￥22.40
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N65E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35302"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/91738/sihh21n65e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(22) "SIHH21N65E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH21N65E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(4) "3000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "24.549530"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 650V 20.3A PWRPAK8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "650V"
["dl_lxlj"]=>
string(13) "20.3A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "170 毫欧 @ 11A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "99nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "2404pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "156W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 650V 20.3A PWRPAK8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35302 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：20.3A（Tc）
Vgs(最大值)：±30V
功率-最大值：156W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥36.70
3000+:
￥28.11
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH21N65E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "47581"
["pdf_add"]=>
string(47) "https://www.vishay.com/docs/68443/sqjq100el.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(86) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6462/MFG_742%7E6026%7E%7E4.jpg"
["images_dir"]=>
string(34) "./images/1039/SQJQ100EL-T1_GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(16) "SQJQ100EL-T1_GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "11.256610"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 40V 200A POWERPAK8"
["xl"]=>
string(33) "Automotive, AEC-Q101, TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "200A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "1.2 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "220nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "14500pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "150W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607927090"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 40V 200A POWERPAK8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47581 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：200A（Tc）
Vgs(最大值)：±20V
功率-最大值：150W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥16.83
2000+:
￥12.89
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ100EL-T1_GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "35909"
["pdf_add"]=>
string(48) "https://www.vishay.com/docs/91650/sihh14n60e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(82) "//media.digikey.com/Renders/Vishay%20Siliconix%20Renders/E-Series-Power-MOSFET.jpg"
["images"]=>
string(82) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6348/742%7E6041%7E%7E8.jpg"
["images_dir"]=>
string(36) "./images/1039/SIHH14N65EF-T1-GE3.jpg"
["ljbh"]=>
string(22) "SIHH14N60E-T1-GE3TR-ND"
["zzsbh"]=>
string(17) "SIHH14N60E-T1-GE3"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "13.644370"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "MOSFET N-CH 600V 16A POWERPAK8X8"
["xl"]=>
string(1) "-"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "600V"
["dl_lxlj"]=>
string(11) "16A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "255 毫欧 @ 7A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "82nC @ 10V"
["vgs_zdz"]=>
string(5) "±30V"
["bt_vds_srdr"]=>
string(13) "1416pF @ 100V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "147W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CH 600V 16A POWERPAK8X8
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 35909 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：16A（Tc）
Vgs(最大值)：±30V
功率-最大值：147W（Tc）
工作温度：-55°C ~ 150°C（TJ）
|
|
10+:
￥20.40
3000+:
￥15.62
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SIHH14N60E-T1-GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46047"
["pdf_add"]=>
string(1) "-"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SQJQ148E-T1_GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "AUTOMOTIVE N-CHANNEL 40 V (D-S)"
["xl"]=>
string(40) "Automotive, AEC-Q101, TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "375A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "1.6 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "86nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "4930pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "325W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(16) "PowerPAK® 8 x 8"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593845"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：PowerPAK® 8 x 8
描述：
AUTOMOTIVE N-CHANNEL 40 V (D-S)
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46047 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：375A（Tc）
Vgs(最大值)：±20V
功率-最大值：325W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ148E-T1_GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46051"
["pdf_add"]=>
string(1) "-"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(33) "/wcsstore/CN/images/pna-zh-cn.jpg"
["images_dir"]=>
string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SQJQ142E-T1_GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "AUTOMOTIVE N-CHANNEL 40 V (D-S)"
["xl"]=>
string(40) "Automotive, AEC-Q101, TrenchFET® Gen IV"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "460A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "1.24 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "130nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "6975pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "500W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(16) "PowerPAK® 8 x 8"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
NULL
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593867"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：PowerPAK® 8 x 8
描述：
AUTOMOTIVE N-CHANNEL 40 V (D-S)
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46051 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：460A（Tc）
Vgs(最大值)：±20V
功率-最大值：500W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ142E-T1_GE3' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "46071"
["pdf_add"]=>
string(46) "https://www.vishay.com/docs/76718/sqjq480e.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(86) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6462/MFG_742%7E6026%7E%7E4.jpg"
["images_dir"]=>
string(34) "./images/1039/SQJQ100EL-T1_GE3.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(15) "SQJQ480E-T1_GE3"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "11.256610"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "MOSFET N-CHAN 80V POWERPAK 8X8L"
["xl"]=>
string(33) "Automotive, AEC-Q101, TrenchFET®"
["zzs"]=>
string(13) "Vishay/威世"
["zzs_new"]=>
string(13) "Vishay/威世"
["zzs_old"]=>
string(6) "Vishay"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(12) "150A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(20) "3 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "144nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "8625pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "136W（Tc）"
["gzwd"]=>
string(23) "-55°C ~ 175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(16) "PowerPAK® 8 x 8"
["djs"]=>
string(20) "车规级/Automotive"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "2000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1607593939"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PowerPAK® 8 x 8
外壳：8-PowerTDFN
描述：
MOSFET N-CHAN 80V POWERPAK 8X8L
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 46071 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：80V
电流-连续漏极(id)：150A（Tc）
Vgs(最大值)：±20V
功率-最大值：136W（Tc）
工作温度：-55°C ~ 175°C（TJ）
|
|
10+:
￥16.83
2000+:
￥12.89
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
2000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'SQJQ480E-T1_GE3' ) LIMIT 1
|
