Microchip Technology公司介绍和产品目录_Microchip/微芯_微芯科技专区_授权代理商

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(69) { ["id"]=> string(3) "976" ["pdf_add"]=> string(88) "http://www.microsemi.com/document-portal/doc_download/134006-aptmc120tam33ctpag-rev0-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/photos/Microsemi%20Photos/APTGL120TA120TPG.JPG" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APTGL120TA120TPG.JPG" ["ljbh"]=> string(21) "APTMC120TAM33CTPAG-ND" ["zzsbh"]=> string(18) "APTMC120TAM33CTPAG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(2) "23" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 78A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(18) "碳化硅（SiC）" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(11) "78A（Tc）" ["bt_id_vgs_rds"]=> string(21) "33 毫欧 @ 60A，20V" ["bt_id_vgs_zdz"]=> string(22) "2.2V @ 3mA（标准）" ["bt_vgs_sjdh"]=> string(11) "148nC @ 20V" ["bt_vds_srdr"]=> string(14) "2850pF @ 1000V" ["gn_zdz"]=> string(4) "370W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTMC120TAM33CTPAG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 78A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 976 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：碳化硅（SiC）漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：78A（Tc）最大功率值：370W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：1041976 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1044" ["pdf_add"]=> string(82) "http://www.microsemi.com/document-portal/doc_download/7360-aptc60tdum35pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTC60TDUM35PG-ND" ["zzsbh"]=> string(14) "APTC60TDUM35PG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "9" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 600V 72A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(3) "72A" ["bt_id_vgs_rds"]=> string(21) "35 毫欧 @ 72A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.9V @ 5.4mA" ["bt_vgs_sjdh"]=> string(11) "518nC @ 10V" ["bt_vds_srdr"]=> string(13) "14000pF @ 25V" ["gn_zdz"]=> string(4) "416W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC60TDUM35PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 600V 72A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1044 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：600V 电流-连续漏极(id)：72A 最大功率值：416W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411044 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1868" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=7986 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(16) "APTM08TAM04PG-ND" ["zzsbh"]=> string(13) "APTM08TAM04PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 75V 120A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "75V" ["dl_lxlj"]=> string(4) "120A" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["bt_vds_srdr"]=> string(12) "4530pF @ 25V" ["gn_zdz"]=> string(4) "138W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM08TAM04PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 75V 120A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1868 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：75V 电流-连续漏极(id)：120A 最大功率值：138W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411868 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1874" ["pdf_add"]=> string(80) "http://www.microsemi.com/document-portal/doc_download/7378-aptc80ta15pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(15) "APTC80TA15PG-ND" ["zzsbh"]=> string(12) "APTC80TA15PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET 6N-CH 800V 28A SP6P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(3) "28A" ["bt_id_vgs_rds"]=> string(22) "150 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(10) "3.9V @ 2mA" ["bt_vgs_sjdh"]=> string(11) "180nC @ 10V" ["bt_vds_srdr"]=> string(12) "4507pF @ 25V" ["gn_zdz"]=> string(4) "277W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC80TA15PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 800V 28A SP6P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1874 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：800V 电流-连续漏极(id)：28A 最大功率值：277W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411874 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1875" ["pdf_add"]=> string(81) "http://www.microsemi.com/document-portal/doc_download/7379-aptc80tdu15pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(16) "APTC80TDU15PG-ND" ["zzsbh"]=> string(13) "APTC80TDU15PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 800V 28A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(3) "28A" ["bt_id_vgs_rds"]=> string(22) "150 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(10) "3.9V @ 2mA" ["bt_vgs_sjdh"]=> string(11) "180nC @ 10V" ["bt_vds_srdr"]=> string(12) "4507pF @ 25V" ["gn_zdz"]=> string(4) "277W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC80TDU15PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 800V 28A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1875 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：800V 电流-连续漏极(id)：28A 最大功率值：277W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411875 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1877" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8061 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TAM19FPG-ND" ["zzsbh"]=> string(14) "APTM10TAM19FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 100V 70A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "70A" ["bt_id_vgs_rds"]=> string(21) "21 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "200nC @ 10V" ["bt_vds_srdr"]=> string(12) "5100pF @ 25V" ["gn_zdz"]=> string(4) "208W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TAM19FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 70A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1877 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：70A 最大功率值：208W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411877 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1909" ["pdf_add"]=> string(81) "http://www.microsemi.com/document-portal/doc_download/7358-aptc60tam35pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(16) "APTC60TAM35PG-ND" ["zzsbh"]=> string(13) "APTC60TAM35PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 600V 72A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(3) "72A" ["bt_id_vgs_rds"]=> string(21) "35 毫欧 @ 72A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.9V @ 5.4mA" ["bt_vgs_sjdh"]=> string(11) "518nC @ 10V" ["bt_vds_srdr"]=> string(13) "14000pF @ 25V" ["gn_zdz"]=> string(4) "416W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC60TAM35PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 600V 72A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1909 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：600V 电流-连续漏极(id)：72A 最大功率值：416W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411909 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1910" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8062 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TDUM09PG-ND" ["zzsbh"]=> string(14) "APTM10TDUM09PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 100V 139A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "139A" ["bt_id_vgs_rds"]=> string(23) "10 毫欧 @ 69.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "350nC @ 10V" ["bt_vds_srdr"]=> string(12) "9875pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TDUM09PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 139A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1910 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：139A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411910 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1915" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8060 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TAM09FPG-ND" ["zzsbh"]=> string(14) "APTM10TAM09FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 100V 139A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "139A" ["bt_id_vgs_rds"]=> string(23) "10 毫欧 @ 69.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "350nC @ 10V" ["bt_vds_srdr"]=> string(12) "9875pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TAM09FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 139A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1915 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：139A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411915 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1922" ["pdf_add"]=> string(79) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8093" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM120TDU57PG-ND" ["zzsbh"]=> string(14) "APTM120TDU57PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 17A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(3) "17A" ["bt_id_vgs_rds"]=> string(23) "684 毫欧 @ 8.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "187nC @ 10V" ["bt_vds_srdr"]=> string(12) "5155pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM120TDU57PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 17A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1922 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：17A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411922 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1925" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8141 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM20TAM16FPG-ND" ["zzsbh"]=> string(14) "APTM20TAM16FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 200V 104A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(4) "104A" ["bt_id_vgs_rds"]=> string(21) "19 毫欧 @ 52A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["bt_vds_srdr"]=> string(12) "7220pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM20TAM16FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 200V 104A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1925 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：200V 电流-连续漏极(id)：104A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411925 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1927" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8200 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM50TAM65FPG-ND" ["zzsbh"]=> string(14) "APTM50TAM65FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 500V 51A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(3) "51A" ["bt_id_vgs_rds"]=> string(23) "78 毫欧 @ 25.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["bt_vds_srdr"]=> string(12) "7000pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM50TAM65FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 500V 51A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1927 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：500V 电流-连续漏极(id)：51A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411927 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1929" ["pdf_add"]=> string(82) "http://www.microsemi.com/document-portal/doc_download/7357-aptc60tam24tpg-rev1-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(64) "//media.digikey.com/Photos/Microsemi%20Photos/APTC60TAM24TPG.JPG" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APTC60TAM24TPG.JPG" ["ljbh"]=> string(17) "APTC60TAM24TPG-ND" ["zzsbh"]=> string(14) "APTC60TAM24TPG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 600V 95A SP6-P" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(9) "超级结" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(3) "95A" ["bt_id_vgs_rds"]=> string(23) "24 毫欧 @ 47.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "3.9V @ 5mA" ["bt_vgs_sjdh"]=> string(11) "300nC @ 10V" ["bt_vds_srdr"]=> string(13) "14400pF @ 25V" ["gn_zdz"]=> string(4) "462W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC60TAM24TPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 600V 95A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1929 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：超级结漏源极电压(vdss)：600V 电流-连续漏极(id)：95A 最大功率值：462W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411929 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1930" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8022 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM100TA35FPG-ND" ["zzsbh"]=> string(14) "APTM100TA35FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1000V 22A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(14) "1000V（1kV）" ["dl_lxlj"]=> string(3) "22A" ["bt_id_vgs_rds"]=> string(22) "420 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "186nC @ 10V" ["bt_vds_srdr"]=> string(12) "5200pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM100TA35FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1000V 22A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1930 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：1000V（1kV）电流-连续漏极(id)：22A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411930 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1942" ["pdf_add"]=> string(82) "http://www.microsemi.com/document-portal/doc_download/7395-aptc90tam60tpg-rev1-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(17) "APTC90TAM60TPG-ND" ["zzsbh"]=> string(14) "APTC90TAM60TPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 900V 59A SP6-P" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(9) "超级结" ["ldjdy"]=> string(4) "900V" ["dl_lxlj"]=> string(3) "59A" ["bt_id_vgs_rds"]=> string(22) "60 毫欧 @ 52A、 10V" ["bt_id_vgs_zdz"]=> string(10) "3.5V @ 6mA" ["bt_vgs_sjdh"]=> string(11) "540nC @ 10V" ["bt_vds_srdr"]=> string(14) "13600pF @ 100V" ["gn_zdz"]=> string(4) "462W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC90TAM60TPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 900V 59A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1942 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：超级结漏源极电压(vdss)：900V 电流-连续漏极(id)：59A 最大功率值：462W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411942 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1957" ["pdf_add"]=> string(81) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=134009" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(21) "APTMC120TAM17CTPAG-ND" ["zzsbh"]=> string(18) "APTMC120TAM17CTPAG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 147A SP6P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(18) "碳化硅（SiC）" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(12) "147A（Tc）" ["bt_id_vgs_rds"]=> string(22) "17 毫欧 @ 100A，20V" ["bt_id_vgs_zdz"]=> string(23) "2.4V @ 20mA（标准）" ["bt_vgs_sjdh"]=> string(11) "322nC @ 20V" ["bt_vds_srdr"]=> string(14) "5600pF @ 1000V" ["gn_zdz"]=> string(4) "625W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTMC120TAM17CTPAG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 147A SP6P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1957 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：碳化硅（SiC）漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：147A（Tc）最大功率值：625W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411957 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1959" ["pdf_add"]=> string(81) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=134005" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(21) "APTMC120TAM12CTPAG-ND" ["zzsbh"]=> string(18) "APTMC120TAM12CTPAG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 220A SP6P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(18) "碳化硅（SiC）" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(12) "220A（Tc）" ["bt_id_vgs_rds"]=> string(22) "12 毫欧 @ 150A，20V" ["bt_id_vgs_zdz"]=> string(23) "2.4V @ 30mA（标准）" ["bt_vgs_sjdh"]=> string(11) "483nC @ 20V" ["bt_vds_srdr"]=> string(14) "8400pF @ 1000V" ["gn_zdz"]=> string(4) "925W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTMC120TAM12CTPAG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 220A SP6P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1959 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：碳化硅（SiC）漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：220A（Tc）最大功率值：925W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411959 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2450" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Microsemi%20PDFs/APTM08TDUM04PG.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM08TDUM04PG-ND" ["zzsbh"]=> string(14) "APTM08TDUM04PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 75V 120A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "75V" ["dl_lxlj"]=> string(4) "120A" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["bt_vds_srdr"]=> string(12) "4530pF @ 25V" ["gn_zdz"]=> string(4) "138W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM08TDUM04PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 75V 120A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2450 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：75V 电流-连续漏极(id)：120A 最大功率值：138W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412450 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2456" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Microsemi%20PDFs/APTM100TDU35PG.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM100TDU35PG-ND" ["zzsbh"]=> string(14) "APTM100TDU35PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1000V 22A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(14) "1000V（1kV）" ["dl_lxlj"]=> string(3) "22A" ["bt_id_vgs_rds"]=> string(22) "420 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "186nC @ 10V" ["bt_vds_srdr"]=> string(12) "5200pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM100TDU35PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1000V 22A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2456 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：1000V（1kV）电流-连续漏极(id)：22A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412456 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2460" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Microsemi%20PDFs/APTM10TDUM19PG.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TDUM19PG-ND" ["zzsbh"]=> string(14) "APTM10TDUM19PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 100V 70A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "70A" ["bt_id_vgs_rds"]=> string(21) "21 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "200nC @ 10V" ["bt_vds_srdr"]=> string(12) "5100pF @ 25V" ["gn_zdz"]=> string(4) "208W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TDUM19PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 70A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2460 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：70A 最大功率值：208W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412460 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(69) { ["id"]=> string(3) "976" ["pdf_add"]=> string(88) "http://www.microsemi.com/document-portal/doc_download/134006-aptmc120tam33ctpag-rev0-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(66) "//media.digikey.com/photos/Microsemi%20Photos/APTGL120TA120TPG.JPG" ["images"]=> string(86) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APTGL120TA120TPG.JPG" ["ljbh"]=> string(21) "APTMC120TAM33CTPAG-ND" ["zzsbh"]=> string(18) "APTMC120TAM33CTPAG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(2) "23" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 78A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(18) "碳化硅（SiC）" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(11) "78A（Tc）" ["bt_id_vgs_rds"]=> string(21) "33 毫欧 @ 60A，20V" ["bt_id_vgs_zdz"]=> string(22) "2.2V @ 3mA（标准）" ["bt_vgs_sjdh"]=> string(11) "148nC @ 20V" ["bt_vds_srdr"]=> string(14) "2850pF @ 1000V" ["gn_zdz"]=> string(4) "370W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTMC120TAM33CTPAG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 78A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 976 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：碳化硅（SiC）漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：78A（Tc）最大功率值：370W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：1041976 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1044" ["pdf_add"]=> string(82) "http://www.microsemi.com/document-portal/doc_download/7360-aptc60tdum35pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTC60TDUM35PG-ND" ["zzsbh"]=> string(14) "APTC60TDUM35PG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "9" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 600V 72A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(3) "72A" ["bt_id_vgs_rds"]=> string(21) "35 毫欧 @ 72A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.9V @ 5.4mA" ["bt_vgs_sjdh"]=> string(11) "518nC @ 10V" ["bt_vds_srdr"]=> string(13) "14000pF @ 25V" ["gn_zdz"]=> string(4) "416W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC60TDUM35PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 600V 72A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1044 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：600V 电流-连续漏极(id)：72A 最大功率值：416W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411044 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1868" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=7986 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(16) "APTM08TAM04PG-ND" ["zzsbh"]=> string(13) "APTM08TAM04PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 75V 120A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "75V" ["dl_lxlj"]=> string(4) "120A" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["bt_vds_srdr"]=> string(12) "4530pF @ 25V" ["gn_zdz"]=> string(4) "138W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM08TAM04PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 75V 120A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1868 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：75V 电流-连续漏极(id)：120A 最大功率值：138W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411868 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1874" ["pdf_add"]=> string(80) "http://www.microsemi.com/document-portal/doc_download/7378-aptc80ta15pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(15) "APTC80TA15PG-ND" ["zzsbh"]=> string(12) "APTC80TA15PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET 6N-CH 800V 28A SP6P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(3) "28A" ["bt_id_vgs_rds"]=> string(22) "150 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(10) "3.9V @ 2mA" ["bt_vgs_sjdh"]=> string(11) "180nC @ 10V" ["bt_vds_srdr"]=> string(12) "4507pF @ 25V" ["gn_zdz"]=> string(4) "277W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC80TA15PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 800V 28A SP6P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1874 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：800V 电流-连续漏极(id)：28A 最大功率值：277W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411874 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1875" ["pdf_add"]=> string(81) "http://www.microsemi.com/document-portal/doc_download/7379-aptc80tdu15pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(16) "APTC80TDU15PG-ND" ["zzsbh"]=> string(13) "APTC80TDU15PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 800V 28A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(3) "28A" ["bt_id_vgs_rds"]=> string(22) "150 毫欧 @ 14A，10V" ["bt_id_vgs_zdz"]=> string(10) "3.9V @ 2mA" ["bt_vgs_sjdh"]=> string(11) "180nC @ 10V" ["bt_vds_srdr"]=> string(12) "4507pF @ 25V" ["gn_zdz"]=> string(4) "277W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC80TDU15PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 800V 28A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1875 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：800V 电流-连续漏极(id)：28A 最大功率值：277W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411875 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1877" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8061 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TAM19FPG-ND" ["zzsbh"]=> string(14) "APTM10TAM19FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 100V 70A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "70A" ["bt_id_vgs_rds"]=> string(21) "21 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "200nC @ 10V" ["bt_vds_srdr"]=> string(12) "5100pF @ 25V" ["gn_zdz"]=> string(4) "208W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TAM19FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 70A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1877 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：70A 最大功率值：208W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411877 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1909" ["pdf_add"]=> string(81) "http://www.microsemi.com/document-portal/doc_download/7358-aptc60tam35pg-rev2-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(16) "APTC60TAM35PG-ND" ["zzsbh"]=> string(13) "APTC60TAM35PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 600V 72A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(3) "72A" ["bt_id_vgs_rds"]=> string(21) "35 毫欧 @ 72A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.9V @ 5.4mA" ["bt_vgs_sjdh"]=> string(11) "518nC @ 10V" ["bt_vds_srdr"]=> string(13) "14000pF @ 25V" ["gn_zdz"]=> string(4) "416W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC60TAM35PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 600V 72A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1909 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：600V 电流-连续漏极(id)：72A 最大功率值：416W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411909 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1910" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8062 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TDUM09PG-ND" ["zzsbh"]=> string(14) "APTM10TDUM09PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 100V 139A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "139A" ["bt_id_vgs_rds"]=> string(23) "10 毫欧 @ 69.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "350nC @ 10V" ["bt_vds_srdr"]=> string(12) "9875pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TDUM09PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 139A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1910 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：139A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411910 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1915" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8060 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TAM09FPG-ND" ["zzsbh"]=> string(14) "APTM10TAM09FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 100V 139A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(4) "139A" ["bt_id_vgs_rds"]=> string(23) "10 毫欧 @ 69.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "4V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "350nC @ 10V" ["bt_vds_srdr"]=> string(12) "9875pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TAM09FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 139A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1915 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：139A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411915 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1922" ["pdf_add"]=> string(79) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8093" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM120TDU57PG-ND" ["zzsbh"]=> string(14) "APTM120TDU57PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 17A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(3) "17A" ["bt_id_vgs_rds"]=> string(23) "684 毫欧 @ 8.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "187nC @ 10V" ["bt_vds_srdr"]=> string(12) "5155pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM120TDU57PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 17A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1922 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：17A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411922 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1925" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8141 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM20TAM16FPG-ND" ["zzsbh"]=> string(14) "APTM20TAM16FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 200V 104A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(4) "104A" ["bt_id_vgs_rds"]=> string(21) "19 毫欧 @ 52A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["bt_vds_srdr"]=> string(12) "7220pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM20TAM16FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 200V 104A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1925 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：200V 电流-连续漏极(id)：104A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411925 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1927" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8200 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM50TAM65FPG-ND" ["zzsbh"]=> string(14) "APTM50TAM65FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 500V 51A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "500V" ["dl_lxlj"]=> string(3) "51A" ["bt_id_vgs_rds"]=> string(23) "78 毫欧 @ 25.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "140nC @ 10V" ["bt_vds_srdr"]=> string(12) "7000pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM50TAM65FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 500V 51A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1927 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：500V 电流-连续漏极(id)：51A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411927 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1929" ["pdf_add"]=> string(82) "http://www.microsemi.com/document-portal/doc_download/7357-aptc60tam24tpg-rev1-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(64) "//media.digikey.com/Photos/Microsemi%20Photos/APTC60TAM24TPG.JPG" ["images"]=> string(84) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APTC60TAM24TPG.JPG" ["ljbh"]=> string(17) "APTC60TAM24TPG-ND" ["zzsbh"]=> string(14) "APTC60TAM24TPG" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 600V 95A SP6-P" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(9) "超级结" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(3) "95A" ["bt_id_vgs_rds"]=> string(23) "24 毫欧 @ 47.5A，10V" ["bt_id_vgs_zdz"]=> string(10) "3.9V @ 5mA" ["bt_vgs_sjdh"]=> string(11) "300nC @ 10V" ["bt_vds_srdr"]=> string(13) "14400pF @ 25V" ["gn_zdz"]=> string(4) "462W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC60TAM24TPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 600V 95A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1929 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：超级结漏源极电压(vdss)：600V 电流-连续漏极(id)：95A 最大功率值：462W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411929 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1930" ["pdf_add"]=> string(80) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=8022 " ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM100TA35FPG-ND" ["zzsbh"]=> string(14) "APTM100TA35FPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1000V 22A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(14) "1000V（1kV）" ["dl_lxlj"]=> string(3) "22A" ["bt_id_vgs_rds"]=> string(22) "420 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "186nC @ 10V" ["bt_vds_srdr"]=> string(12) "5200pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM100TA35FPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1000V 22A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1930 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：1000V（1kV）电流-连续漏极(id)：22A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411930 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1942" ["pdf_add"]=> string(82) "http://www.microsemi.com/document-portal/doc_download/7395-aptc90tam60tpg-rev1-pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(17) "APTC90TAM60TPG-ND" ["zzsbh"]=> string(14) "APTC90TAM60TPG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 900V 59A SP6-P" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(9) "超级结" ["ldjdy"]=> string(4) "900V" ["dl_lxlj"]=> string(3) "59A" ["bt_id_vgs_rds"]=> string(22) "60 毫欧 @ 52A、 10V" ["bt_id_vgs_zdz"]=> string(10) "3.5V @ 6mA" ["bt_vgs_sjdh"]=> string(11) "540nC @ 10V" ["bt_vds_srdr"]=> string(14) "13600pF @ 100V" ["gn_zdz"]=> string(4) "462W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTC90TAM60TPG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 900V 59A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1942 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：超级结漏源极电压(vdss)：900V 电流-连续漏极(id)：59A 最大功率值：462W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411942 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1957" ["pdf_add"]=> string(81) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=134009" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(21) "APTMC120TAM17CTPAG-ND" ["zzsbh"]=> string(18) "APTMC120TAM17CTPAG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 147A SP6P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(18) "碳化硅（SiC）" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(12) "147A（Tc）" ["bt_id_vgs_rds"]=> string(22) "17 毫欧 @ 100A，20V" ["bt_id_vgs_zdz"]=> string(23) "2.4V @ 20mA（标准）" ["bt_vgs_sjdh"]=> string(11) "322nC @ 20V" ["bt_vds_srdr"]=> string(14) "5600pF @ 1000V" ["gn_zdz"]=> string(4) "625W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTMC120TAM17CTPAG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 147A SP6P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1957 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：碳化硅（SiC）漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：147A（Tc）最大功率值：625W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411957 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "1959" ["pdf_add"]=> string(81) "http://www.microsemi.com/index.php?option=com_docman&task=doc_download&gid=134005" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["ljbh"]=> string(21) "APTMC120TAM12CTPAG-ND" ["zzsbh"]=> string(18) "APTMC120TAM12CTPAG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1200V 220A SP6P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(18) "碳化硅（SiC）" ["ldjdy"]=> string(16) "1200V（1.2kV）" ["dl_lxlj"]=> string(12) "220A（Tc）" ["bt_id_vgs_rds"]=> string(22) "12 毫欧 @ 150A，20V" ["bt_id_vgs_zdz"]=> string(23) "2.4V @ 30mA（标准）" ["bt_vgs_sjdh"]=> string(11) "483nC @ 20V" ["bt_vds_srdr"]=> string(14) "8400pF @ 1000V" ["gn_zdz"]=> string(4) "925W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTMC120TAM12CTPAG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1200V 220A SP6P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 1959 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：碳化硅（SiC）漏源极电压(vdss)：1200V（1.2kV）电流-连续漏极(id)：220A（Tc）最大功率值：925W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10411959 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2450" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Microsemi%20PDFs/APTM08TDUM04PG.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM08TDUM04PG-ND" ["zzsbh"]=> string(14) "APTM08TDUM04PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 75V 120A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "75V" ["dl_lxlj"]=> string(4) "120A" ["bt_id_vgs_rds"]=> string(22) "4.5 毫欧 @ 60A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "153nC @ 10V" ["bt_vds_srdr"]=> string(12) "4530pF @ 25V" ["gn_zdz"]=> string(4) "138W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM08TDUM04PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 75V 120A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2450 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：75V 电流-连续漏极(id)：120A 最大功率值：138W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412450 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2456" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Microsemi%20PDFs/APTM100TDU35PG.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM100TDU35PG-ND" ["zzsbh"]=> string(14) "APTM100TDU35PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 6N-CH 1000V 22A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(14) "1000V（1kV）" ["dl_lxlj"]=> string(3) "22A" ["bt_id_vgs_rds"]=> string(22) "420 毫欧 @ 11A，10V" ["bt_id_vgs_zdz"]=> string(10) "5V @ 2.5mA" ["bt_vgs_sjdh"]=> string(11) "186nC @ 10V" ["bt_vds_srdr"]=> string(12) "5200pF @ 25V" ["gn_zdz"]=> string(4) "390W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM100TDU35PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 1000V 22A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2456 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：1000V（1kV）电流-连续漏极(id)：22A 最大功率值：390W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412456 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(69) { ["id"]=> string(4) "2460" ["pdf_add"]=> string(73) "//media.digikey.com/pdf/Data%20Sheets/Microsemi%20PDFs/APTM10TDUM19PG.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Photos/Microsemi%20Photos/APT_SP6.jpg" ["images"]=> string(77) "https://www.chenkeiot.com/Public/imagesmk/Photos/Microsemi_Photos/APT_SP6.jpg" ["ljbh"]=> string(17) "APTM10TDUM19PG-ND" ["zzsbh"]=> string(14) "APTM10TDUM19PG" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 6N-CH 100V 70A SP6-P" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "Microchip/微芯" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(21) "Microsemi Corporation" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(24) "6 N-沟道（3 相桥）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(3) "70A" ["bt_id_vgs_rds"]=> string(21) "21 毫欧 @ 35A，10V" ["bt_id_vgs_zdz"]=> string(8) "4V @ 1mA" ["bt_vgs_sjdh"]=> string(11) "200nC @ 10V" ["bt_vds_srdr"]=> string(12) "5100pF @ 25V" ["gn_zdz"]=> string(4) "208W" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(3) "SP6" ["gysqjfz"]=> string(5) "SP6-P" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "插件" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } } 型号： APTM10TDUM19PG复制状态：在售修改品牌： Microchip/微芯复制封装：SP6-P 外壳：SP6 描述： MOSFET 6N-CH 100V 70A SP6-P	SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 2460 ) LIMIT 1 Fet类型：6 N-沟道（3 相桥） Fet功能：标准漏源极电压(vdss)：100V 电流-连续漏极(id)：70A 最大功率值：208W 工作温度：-40°C ~ 150°C（TJ）	类别：多通道MOS管丝印：(请登录) 料号：10412460 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车

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