首页 >> 所有制造商 >> Infineon/英飞凌

类目:
更多
封装:
清除条件
封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(74) { ["id"]=> string(4) "6748" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD60R650CEATMA1TR-ND" ["zzsbh"]=> string(16) "IPD60R650CEATMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 600V TO-252-3" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "650 毫欧 @ 2.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 200µA" ["bt_vgs_sjdh"]=> string(12) "20.5nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "440pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "63W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R650CEATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO-252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6748 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：7A（Tc）
Vgs(最大值)：±20V
功率-最大值：63W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：10396748
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R650CEATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "20408" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Renders/Infineon%20Renders/TO252-3.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD80R2K8CEBTMA1TR-ND" ["zzsbh"]=> string(16) "IPD80R2K8CEBTMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 800V 1.9A TO252-3" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "1.9A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "2.8 欧姆 @ 1.1A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.9V @ 120µA" ["bt_vgs_sjdh"]=> string(10) "12nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "290pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "42W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD80R2K8CEBTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 800V 1.9A TO252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20408 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：1.9A（Tc）
Vgs(最大值)：±20V
功率-最大值：42W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920408
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD80R2K8CEBTMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "20464" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Renders/Infineon%20Renders/TO252-3.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD80R1K4CEBTMA1TR-ND" ["zzsbh"]=> string(16) "IPD80R1K4CEBTMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 800V 3.9A TO252-3" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "3.9A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "1.4 欧姆 @ 2.3A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.9V @ 240µA" ["bt_vgs_sjdh"]=> string(10) "23nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "570pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "63W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD80R1K4CEBTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 800V 3.9A TO252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20464 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：3.9A（Tc）
Vgs(最大值)：±20V
功率-最大值：63W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103920464
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD80R1K4CEBTMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "32098" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD60R2K1CEBTMA1TR-ND" ["zzsbh"]=> string(16) "IPD60R2K1CEBTMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 600V TO-252-3" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "2.3A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "2.1 欧姆 @ 760mA，10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 60µA" ["bt_vgs_sjdh"]=> string(11) "6.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "140pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "22W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R2K1CEBTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO-252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32098 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：2.3A（Tc）
Vgs(最大值)：±20V
功率-最大值：22W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932098
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R2K1CEBTMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "32146" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(58) "//media.digikey.com/Renders/Infineon%20Renders/TO252-3.jpg" ["images"]=> string(78) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD80R1K0CEBTMA1TR-ND" ["zzsbh"]=> string(16) "IPD80R1K0CEBTMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "2500" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N-CH 800V 5.7A TO252-3" ["xl"]=> string(10) "CoolMOS™" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "800V" ["dl_lxlj"]=> string(12) "5.7A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "950 毫欧 @ 3.6A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.9V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "31nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "785pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "83W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD80R1K0CEBTMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 800V 5.7A TO252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32146 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：800V
电流-连续漏极(id)：5.7A（Tc）
Vgs(最大值)：±20V
功率-最大值：83W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932146
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD80R1K0CEBTMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "32197" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD60R1K5CEATMA1TR-ND" ["zzsbh"]=> string(16) "IPD60R1K5CEATMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 600V TO-252-3" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "3.1A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "1.5 欧姆 @ 1.1A，10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 90µA" ["bt_vgs_sjdh"]=> string(11) "9.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "200pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "28W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R1K5CEATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO-252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32197 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：3.1A（Tc）
Vgs(最大值)：±20V
功率-最大值：28W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932197
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R1K5CEATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "32221" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPD60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD60R1K0CEATMA1TR-ND" ["zzsbh"]=> string(16) "IPD60R1K0CEATMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 600V TO-252-3" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "4.3A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "1 欧姆 @ 1.5A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 130µA" ["bt_vgs_sjdh"]=> string(10) "13nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "280pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "37W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R1K0CEATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO-252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32221 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：4.3A（Tc）
Vgs(最大值)：±20V
功率-最大值：37W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932221
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R1K0CEATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "32257" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPA60R800CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851e51e1f59" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD60R800CEATMA1TR-ND" ["zzsbh"]=> string(16) "IPD60R800CEATMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 600V TO-252-3" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "5.6A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "800 毫欧 @ 2A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 170µA" ["bt_vgs_sjdh"]=> string(12) "17.2nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "373pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "48W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R800CEATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO-252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32257 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：5.6A（Tc）
Vgs(最大值)：±20V
功率-最大值：48W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932257
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R800CEATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "32364" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPA60R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c836730d1f10" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD60R460CEATMA1TR-ND" ["zzsbh"]=> string(16) "IPD60R460CEATMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 600V TO-252-3" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "9.1A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "460 毫欧 @ 3.4A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 280µA" ["bt_vgs_sjdh"]=> string(10) "28nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "620pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "74W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R460CEATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO-252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32364 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：9.1A（Tc）
Vgs(最大值)：±20V
功率-最大值：74W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932364
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R460CEATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "32416" ["pdf_add"]=> string(106) "http://www.infineon.com/dgdl/Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(21) "IPD60R400CEATMA1TR-ND" ["zzsbh"]=> string(16) "IPD60R400CEATMA1" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 600V TO-252-3" ["xl"]=> string(13) "CoolMOS™ CE" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(13) "10.3A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "400 毫欧 @ 3.8A，10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 300µA" ["bt_vgs_sjdh"]=> string(10) "32nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "700pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "83W（Tc）" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R400CEATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO-252-3
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 32416 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：10.3A（Tc）
Vgs(最大值)：±20V
功率-最大值：83W（Tc）
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：103932416
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R400CEATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "50999" ["pdf_add"]=> string(107) "https://www.infineon.com/dgdl/Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(59) "//media.digikey.com/Renders/Infineon%20Renders/TO-252-3.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(16) "IPD60R2K0C6ATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(22) "MOSFET N-CH 600V TO252" ["xl"]=> string(13) "CoolMOS™ C6" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "2.4A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "2 欧姆 @ 760mA，10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 60µA" ["bt_vgs_sjdh"]=> string(11) "6.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "140pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "22.3W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(46) "TO-252-3，DPak（2 引线 + 接片），SC-63" ["gysqjfz"]=> string(8) "TO-252-3" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607936103" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： IPD60R2K0C6ATMA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：TO-252-3
外壳：TO-252-3，DPak（2 引线 + 接片），SC-63
描述： MOSFET N-CH 600V TO252
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50999 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：600V
电流-连续漏极(id)：2.4A（Tc）
Vgs(最大值)：±20V
功率-最大值：22.3W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103950999
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPD60R2K0C6ATMA1' ) LIMIT 1

辰科物联

https://www.chenkeiot.com/

已成功加入购物车！
去购物车结算 继续采购
复制成功

业务介绍

芯片采购
芯片丝印
商品选型
芯片烧录
开发工具
Bom采购
SMT贴片

购物指南

注册登录
找回密码
购物流程
常见问题
支付方式
配送方式

联系我们

直线：0755-28435922
总部地址：广东省深圳市龙岗区坂田上雪村金鹏工业区新一栋5楼
联系我们
公司简介

关注我们

微信扫码
辰科物联介绍

粤公网安备 号

粤ICP备2023141824号-1

Copyright © 2002-2025 深圳市辰科物联有限公司 版权所有

销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922