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array(68) { ["id"]=> string(5) "10265" ["pdf_add"]=> string(58) "http://www.fairchildsemi.com/datasheets/IS/ISL9R8120P2.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/261;MKT-TO263A02;;2.jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/261;MKT-TO263A02;;2.jpg" ["ljbh"]=> string(20) "ISL9R8120S3STFSTR-ND" ["zzsbh"]=> string(13) "ISL9R8120S3ST" ["zddgs"]=> string(3) "800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "DIODE GEN PURP 1.2KV 8A TO263" ["xl"]=> string(10) "Stealth™" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["ejglx"]=> string(6) "标准" ["dy_dc"]=> string(72) "" ["dl_pjzl"]=> string(2) "8A" ["bt_if"]=> string(9) "3.3V @ 8A" ["sd"]=> string(39) "快速恢复 =< 500ns，> 200mA（Io）" ["fxhfsj"]=> string(5) "300ns" ["bt_vr_dl_fx"]=> string(14) "100µA @ 1200V" ["bt_vr_dr"]=> string(17) "30pF @ 10V，1MHz" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(17) "TO-263（D2PAK）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gzwd"]=> string(11) "-55°C ~ 15" ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "3" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "115" ["wl_num"]=> string(4) "1026" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(15) "golon_ejg_zlq_d" ["ch_bm"]=> string(26) "二极管-整流器-单路" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_ejg_zlq_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1026" ["parent_id"]=> string(3) "112" ["lb"]=> string(37) "二极管 二极管-整流器-单路" ["action_name"]=> string(2) "e3" ["rate"]=> string(4) "1.18" ["rate_hot"]=> string(2) "45" ["moq_rate"]=> string(6) "1.6300" } }
型号： ISL9R8120S3ST复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：TO-263（D2PAK）
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： DIODE GEN PURP 1.2KV 8A TO263
SELECT * FROM `golon_ejg_zlq_d` WHERE ( `id` = 10265 ) LIMIT 1
二极管类型：标准
DC最大反向电压(Vr)：
平均整流电流(io)：8A
不同if时电压-正向(vf)：3.3V @ 8A
速度：快速恢复 =< 500ns，> 200mA（Io）
反向恢复时间(trr)：300ns
不同vr的电流-反向漏电流：100µA @ 1200V
工作温度-结：-55°C ~ 15
丝印：(请登录)
料号：102610265
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'ISL9R8120S3ST' ) LIMIT 1
array(68) { ["id"]=> string(4) "2451" ["pdf_add"]=> string(53) "http://www.fairchildsemi.com/datasheets/FJ/FJB102.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/261;MKT-TO263A02;;2.jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/261;MKT-TO263A02;;2.jpg" ["ljbh"]=> string(13) "FJB102TMTR-ND" ["zzsbh"]=> string(8) "FJB102TM" ["zddgs"]=> string(3) "800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS NPN DARL 100V 8A TO263" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["jtglx"]=> string(15) "NPN - 达林顿" ["dl_jdj_ic"]=> string(2) "8A" ["dy_jsjj"]=> string(4) "100V" ["bt_ib"]=> string(16) "2.5V @ 80mA，8A" ["dl_jdjjz_zdz"]=> string(5) "50µA" ["bt_ic"]=> string(14) "1000 @ 3A，4V" ["gl_zdz"]=> string(3) "80W" ["pl_yq"]=> string(1) "-" ["azlx"]=> string(15) "表面贴装型" ["gzwd"]=> string(14) "150°C（TJ）" ["spq"]=> NULL ["moq"]=> string(2) "50" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(17) "TO-263（D2PAK）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(0) "" ["gl_gnd"]=> string(0) "" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(0) "" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "122" ["wl_num"]=> string(4) "1032" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(18) "golon_jtg_sj_bjt_d" ["ch_bm"]=> string(27) "单路晶体管-双极(BJT)" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["bz"]=> string(0) "" ["is_rohs"]=> string(1) "1" }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_sj_bjt_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1032" ["parent_id"]=> string(3) "121" ["lb"]=> string(38) "晶体管 单路晶体管-双极(BJT)" ["action_name"]=> string(4) "jtg1" ["rate"]=> string(5) "1.158" ["rate_hot"]=> string(2) "50" ["moq_rate"]=> string(6) "1.6580" } }
型号： FJB102TM复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：TO-263（D2PAK）
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： TRANS NPN DARL 100V 8A TO263
SELECT * FROM `golon_jtg_sj_bjt_d` WHERE ( `id` = 2451 ) LIMIT 1
晶体管类型：NPN - 达林顿
电流-集电极(ic)(最大值)：8A
电压-集射极击穿(最大值)：100V
电流-集电极截止(最大值)：50µA
不同?ic，vce时的dc电流增益（hfe）（最小值）：1000 @ 3A，4V
功率-最大值：80W
频率-跃迁：-
丝印：(请登录)
料号：10322451
量大可议价
起订量:50 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FJB102TM' ) LIMIT 1
array(72) { ["id"]=> string(5) "20141" ["pdf_add"]=> string(59) "http://www.fairchildsemi.com/datasheets/FD/FDB8160_F085.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/261;MKT-TO263A02;;2.jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/261;MKT-TO263A02;;2.jpg" ["ljbh"]=> string(17) "FDB8160_F085TR-ND" ["zzsbh"]=> string(12) "FDB8160_F085" ["zddgs"]=> string(3) "800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET N-CH 30V 80A D2PAK" ["xl"]=> string(36) "汽车级，AEC-Q101，PowerTrench®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "80A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(22) "1.8 毫欧 @ 80A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "243nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "11825pF @ 15V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(4) "254W" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(17) "TO-263（D2PAK）" ["djs"]=> string(20) "车规级/Automotive" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FDB8160_F085复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：TO-263（D2PAK）
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： MOSFET N-CH 30V 80A D2PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 20141 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：80A（Tc）
Vgs(最大值)：
功率-最大值：254W
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103920141
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FDB8160_F085' ) LIMIT 1
array(72) { ["id"]=> string(5) "30004" ["pdf_add"]=> string(55) "http://www.fairchildsemi.com/datasheets/FQ/FQB8N60C.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(78) "//media.digikey.com/Renders/Fairchild%20Semi%20Renders/261;MKT-TO263A02;;2.jpg" ["images"]=> string(96) "https://www.chenkeiot.com/Public/imagesmk/Renders/Fairchild_Semi_Renders/261;MKT-TO263A02;;2.jpg" ["ljbh"]=> string(18) "FQB8N60CTM_WSTR-ND" ["zzsbh"]=> string(13) "FQB8N60CTM_WS" ["zddgs"]=> string(3) "800" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(21) "MOSFET N-CH 600V 7.5A" ["xl"]=> string(6) "QFET®" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(23) "Fairchild Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(33) "MOSFET N 通道，金属氧化物" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "7.5A（Tc）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(24) "1.2 欧姆 @ 3.75A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1255pF @ 25V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(5) "3.13W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(49) "TO-263-3，D²PAK（2 引线+接片），TO-263AB" ["gysqjfz"]=> string(17) "TO-263（D2PAK）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "3" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FQB8N60CTM_WS复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：TO-263（D2PAK）
外壳：TO-263-3，D²PAK（2 引线+接片），TO-263AB
描述： MOSFET N-CH 600V 7.5A
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 30004 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：600V
电流-连续漏极(id)：7.5A（Tc）
Vgs(最大值)：
功率-最大值：3.13W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103930004
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FQB8N60CTM_WS' ) LIMIT 1
array(72) { ["id"]=> string(5) "47742" ["pdf_add"]=> string(54) "https://www.onsemi.com/pub/Collateral/NTB004N10G-D.PDF" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(10) "NTB004N10G" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "POWER MOSFET 201 AMPS, 100 VOLTS" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(16) "ON Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "201A（Ta）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "4.2 毫欧 @ 100A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 500µA" ["bt_vgs_sjdh"]=> string(11) "175nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(13) "11900pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "340W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(17) "TO-263（D2Pak）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607927762" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： NTB004N10G复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：TO-263（D2Pak）
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： POWER MOSFET 201 AMPS, 100 VOLTS
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 47742 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：201A（Ta）
Vgs(最大值)：±20V
功率-最大值：340W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103947742
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NTB004N10G' ) LIMIT 1
array(72) { ["id"]=> string(5) "50553" ["pdf_add"]=> string(56) "https://www.onsemi.com/pub/Collateral/NTBS9D0N10MC-D.PDF" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(12) "NTBS9D0N10MC" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "PTNG 100V 9.0MOHM, D2PAK-3L" ["xl"]=> string(1) "-" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(16) "ON Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(25) "14A（Ta），60A（Tc）" ["qddy"]=> string(8) "6V，10V" ["bt_id_vgs_rds"]=> string(20) "9 毫欧 @ 23A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 131µA" ["bt_vgs_sjdh"]=> string(10) "23nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "1695pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(26) "3.8W（Ta），68W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 175°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(17) "TO-263（D2Pak）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935447" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： NTBS9D0N10MC复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：TO-263（D2Pak）
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： PTNG 100V 9.0MOHM, D2PAK-3L
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50553 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：14A（Ta），60A（Tc）
Vgs(最大值)：±20V
功率-最大值：3.8W（Ta），68W（Tc）
工作温度：-55°C ~ 175°C（TJ）
丝印：(请登录)
料号：103950553
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NTBS9D0N10MC' ) LIMIT 1
array(72) { ["id"]=> string(5) "50721" ["pdf_add"]=> string(55) "https://www.onsemi.com/pub/Collateral/FCB125N65S3-D.PDF" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(11) "FCB125N65S3" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "POWER MOSFET, N-CHANNEL, SUPERFE" ["xl"]=> string(14) "SuperFET® III" ["zzs"]=> string(16) "ONSEMI/安森美" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(16) "ON Semiconductor" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET（金属氧化物）" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(11) "24A（Tc）" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(22) "125 毫欧 @ 12A，10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 590µA" ["bt_vgs_sjdh"]=> string(10) "46nC @ 10V" ["vgs_zdz"]=> string(5) "±30V" ["bt_vds_srdr"]=> string(13) "1940pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(12) "181W（Tc）" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB" ["gysqjfz"]=> string(17) "TO-263（D2Pak）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607935658" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号： FCB125N65S3复制
状态： 在售 修改
品牌： ONSEMI/安森美复制
封装：TO-263（D2Pak）
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述： POWER MOSFET, N-CHANNEL, SUPERFE
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 50721 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：650V
电流-连续漏极(id)：24A（Tc）
Vgs(最大值)：±30V
功率-最大值：181W（Tc）
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：103950721
量大可议价
起订量:10 修改
包装量: 修改
个
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'FCB125N65S3' ) LIMIT 1

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