array(74) {
["id"]=>
string(4) "2033"
["pdf_add"]=>
string(82) "https://www.renesas.com/us/en/document/dst/np109n055pukmos-field-effect-transistor"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(21) "NP109N055PUK-E1-AY-ND"
["zzsbh"]=>
string(18) "NP109N055PUK-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "13.179230"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 55V 110A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "55V"
["dl_lxlj"]=>
string(12) "110A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "2.2 毫欧 @ 55A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "189nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "11250pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），250W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 55V 110A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2033 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：110A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），250W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP109N055PUK-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2120"
["pdf_add"]=>
string(65) "https://www.renesas.com/us/en/document/dst/np110n04pug-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(20) "NP110N04PUG-E1-AY-ND"
["zzsbh"]=>
string(17) "NP110N04PUG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 40V MP-25ZP/TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "110A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "1.8 毫欧 @ 55A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "390nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "25700pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），288W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 40V MP-25ZP/TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2120 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：110A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），288W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP110N04PUG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2336"
["pdf_add"]=>
string(82) "https://www.renesas.com/us/en/document/dst/np110n055pukmos-field-effect-transistor"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(21) "NP110N055PUK-E1-AY-ND"
["zzsbh"]=>
string(18) "NP110N055PUK-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "17.413940"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 55V 110A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "55V"
["dl_lxlj"]=>
string(12) "110A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(23) "1.75 毫欧 @ 55A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "294nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "16050pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），348W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 55V 110A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2336 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：110A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），348W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP110N055PUK-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2365"
["pdf_add"]=>
string(65) "https://www.renesas.com/us/en/document/dst/np110n03pug-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(20) "NP110N03PUG-E1-AY-ND"
["zzsbh"]=>
string(17) "NP110N03PUG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 30V MP-25ZP/TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "110A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "1.5 毫欧 @ 55A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "380nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "24600pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），288W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 30V MP-25ZP/TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2365 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：110A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），288W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP110N03PUG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2423"
["pdf_add"]=>
string(64) "https://www.renesas.com/jp/ja/document/dst/np100p04pdg-datasheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(20) "NP100P04PDG-E1-AY-ND"
["zzsbh"]=>
string(17) "NP100P04PDG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "20.053090"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET P-CH 40V 100A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.5 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "320nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "15100pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），200W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET P-CH 40V 100A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2423 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），200W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP100P04PDG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2424"
["pdf_add"]=>
string(72) "https://www.renesas.com/en-us/doc/DocumentServer/004/D18693EJ3V0DS00.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "NP100P06PDG-E1-AY-ND"
["zzsbh"]=>
string(17) "NP100P06PDG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET P-CH 60V 100A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(12) "100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "6 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "300nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "15000pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），200W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET P-CH 60V 100A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2424 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），200W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP100P06PDG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "2441"
["pdf_add"]=>
string(64) "https://www.renesas.com/jp/ja/document/dst/np100p04plg-datasheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(22) "NP100P04PLG-E1-AYTR-ND"
["zzsbh"]=>
string(17) "NP100P04PLG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "20.818000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET P-CH 40V 100A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.7 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "320nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "15100pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），200W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET P-CH 40V 100A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2441 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），200W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP100P04PLG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5113"
["pdf_add"]=>
string(80) "https://www.renesas.com/us/en/document/dst/np89n04pukmos-field-effect-transistor"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(19) "NP89N04PUK-E1-AY-ND"
["zzsbh"]=>
string(16) "NP89N04PUK-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.240960"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 40V 90A TO-220"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "90A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "2.95 毫欧 @ 45A，5V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "102nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5850pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），147W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 40V 90A TO-220
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5113 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：90A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），147W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP89N04PUK-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5135"
["pdf_add"]=>
string(65) "https://www.renesas.com/us/en/document/dst/np82n055pug-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(22) "NP82N055PUG-E1-AYTR-ND"
["zzsbh"]=>
string(17) "NP82N055PUG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 55V 82A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "55V"
["dl_lxlj"]=>
string(11) "82A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "5.2 毫欧 @ 41A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "160nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "9600pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），143W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 55V 82A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5135 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：82A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），143W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP82N055PUG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5384"
["pdf_add"]=>
string(81) "https://www.renesas.com/us/en/document/dst/np100n04pukmos-field-effect-transistor"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(20) "NP100N04PUK-E1-AY-ND"
["zzsbh"]=>
string(17) "NP100N04PUK-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "11.639890"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 40V 100A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "100A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "2.3 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(1) "-"
["bt_vgs_sjdh"]=>
string(11) "120nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "7050pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），176W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-4，D²Pak（3 引线 + 接片），TO-263AA"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-4，D²Pak（3 引线 + 接片），TO-263AA
描述：
MOSFET N-CH 40V 100A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5384 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），176W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP100N04PUK-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5418"
["pdf_add"]=>
string(72) "https://www.renesas.com/en-us/doc/DocumentServer/004/D18689EJ3V0DS00.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "NP50P06KDG-E1-AY-ND"
["zzsbh"]=>
string(16) "NP50P06KDG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET P-CH 60V 50A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "50A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(21) "17 毫欧 @ 25A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "95nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5000pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "1.8W（Ta），90W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET P-CH 60V 50A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5418 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：50A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），90W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP50P06KDG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5429"
["pdf_add"]=>
string(64) "https://www.renesas.com/us/en/document/dst/np70n10kuf-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(19) "NP70N10KUF-E1-AY-ND"
["zzsbh"]=>
string(16) "NP70N10KUF-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 100V 70A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(11) "70A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(21) "20 毫欧 @ 35A，10V"
["bt_id_vgs_zdz"]=>
string(13) "3.3V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "75nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3750pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），120W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 100V 70A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5429 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：70A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），120W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP70N10KUF-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5438"
["pdf_add"]=>
string(61) "https://www.renesas.com/us/en/document/dst/2sk3943-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(21) "2SK3943-ZP-E1-AYTR-ND"
["zzsbh"]=>
string(16) "2SK3943-ZP-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "MOSFET N-CH 40V MP-25ZP/TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "82A（Tc）"
["qddy"]=>
string(10) "5.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "3.5 毫欧 @ 41A，10V"
["bt_id_vgs_zdz"]=>
string(1) "-"
["bt_vgs_sjdh"]=>
string(10) "93nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5800pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.5W（Ta），104W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 40V MP-25ZP/TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5438 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：82A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta），104W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = '2SK3943-ZP-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7043"
["pdf_add"]=>
string(124) "https://www.renesas.com/us/en/document/dst/np48n055ehe-np48n055khe-np48n055che-np48n055dhe-np48n055mhenp48n055nhe-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(20) "NP48N055KLE-E1-AY-ND"
["zzsbh"]=>
string(17) "NP48N055KLE-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 55V 48A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "55V"
["dl_lxlj"]=>
string(11) "48A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(21) "17 毫欧 @ 24A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "60nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3000pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "1.8W（Ta），85W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 55V 48A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7043 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：48A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），85W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP48N055KLE-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7276"
["pdf_add"]=>
string(118) "https://www.renesas.com/us/en/document/dst/np80n04ehe-np80n04khe-np80n04che-np80n04dhe-np80n04mhenp80n04nhe-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(19) "NP80N04KHE-E1-AY-ND"
["zzsbh"]=>
string(16) "NP80N04KHE-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 40V 80A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "80A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(20) "8 毫欧 @ 40A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "60nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3300pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），120W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 40V 80A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7276 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：80A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），120W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP80N04KHE-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7290"
["pdf_add"]=>
string(65) "https://www.renesas.com/us/en/document/dst/np60n055kug-data-sheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(20) "NP60N055KUG-E1-AY-ND"
["zzsbh"]=>
string(17) "NP60N055KUG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET N-CH 55V 60A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "55V"
["dl_lxlj"]=>
string(11) "60A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "9.4 毫欧 @ 30A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "92nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "5600pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "1.8W（Ta），88W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 55V 60A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7290 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：60A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），88W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP60N055KUG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7398"
["pdf_add"]=>
string(72) "https://www.renesas.com/en-eu/doc/DocumentServer/004/D18687EJ3V0DS00.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4848/D%C3%82%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(35) "./images/1039/NP110N04PUK-E1-AY.jpg"
["ljbh"]=>
string(21) "NP36P06KDG-E1-AYTR-ND"
["zzsbh"]=>
string(16) "NP36P06KDG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "7.918700"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(26) "MOSFET P-CH 60V 36A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "36A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(23) "29.5 毫欧 @ 18A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "54nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "3100pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(26) "1.8W（Ta），56W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET P-CH 60V 36A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7398 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：36A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），56W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP36P06KDG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "7447"
["pdf_add"]=>
string(59) "https://www.renesas.com/us/en/document/dst/n0601n-datasheet"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(1) "-"
["images"]=>
string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/2435/D%C2%B2Pak%2CTO-263_418AA-01.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120S.jpg"
["ljbh"]=>
string(18) "N0601N-ZK-E1-AY-ND"
["zzsbh"]=>
string(15) "N0601N-ZK-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(9) "10.723340"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 60V 100A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(12) "100A（Ta）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "4.2 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(1) "-"
["bt_vgs_sjdh"]=>
string(11) "133nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(12) "7730pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.5W（Ta），156W（Tc）"
["gzwd"]=>
string(14) "150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(3) "800"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 60V 100A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 7447 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：100A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.5W（Ta），156W（Tc）
工作温度：150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
800个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'N0601N-ZK-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "12169"
["pdf_add"]=>
string(72) "https://www.renesas.com/en-us/doc/DocumentServer/004/D16853EJ1V0DS00.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(21) "NP110N055PUG-E1-AY-ND"
["zzsbh"]=>
string(18) "NP110N055PUG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET N-CH 55V 110A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "55V"
["dl_lxlj"]=>
string(12) "110A（Tc）"
["qddy"]=>
string(3) "10V"
["bt_id_vgs_rds"]=>
string(22) "2.4 毫欧 @ 55A，10V"
["bt_id_vgs_zdz"]=>
string(11) "4V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "380nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "25700pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），288W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET N-CH 55V 110A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 12169 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：55V
电流-连续漏极(id)：110A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），288W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP110N055PUG-E1-AY' ) LIMIT 1
|
array(74) {
["id"]=>
string(5) "15048"
["pdf_add"]=>
string(72) "https://www.renesas.com/en-us/doc/DocumentServer/004/D18695EJ3V0DS00.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(83) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/D%C2%B2Pak,TO-263_418AA-01.jpg"
["images"]=>
string(99) "https://www.chenkeiot.com/Public/imagesmk/Renders/Pkg.Case_or_Series/D-C2-B2Pak_TO-263_418AA-01.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "NP100P06PLG-E1-AY-ND"
["zzsbh"]=>
string(17) "NP100P06PLG-E1-AY"
["zddgs"]=>
string(3) "800"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(27) "MOSFET P-CH 60V 100A TO-263"
["xl"]=>
string(1) "-"
["zzs"]=>
string(14) "Renesas/瑞萨"
["zzs_new"]=>
string(14) "Renesas/瑞萨"
["zzs_old"]=>
string(27) "Renesas Electronics America"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "P 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(12) "100A（Tc）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(20) "6 毫欧 @ 50A，10V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "300nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(13) "15000pF @ 10V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(27) "1.8W（Ta），200W（Tc）"
["gzwd"]=>
string(14) "175°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(51) "TO-263-3，D²Pak（2 引线 + 接片），TO-263AB"
["gysqjfz"]=>
string(6) "TO-263"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：TO-263
外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
描述：
MOSFET P-CH 60V 100A TO-263
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 15048 ) LIMIT 1
Fet类型：P 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：100A（Tc）
Vgs(最大值)：±20V
功率-最大值：1.8W（Ta），200W（Tc）
工作温度：175°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'NP100P06PLG-E1-AY' ) LIMIT 1
|
