封装图 商品描述 综合参数 封装规格/资料 价格(含税) 数量 操作
array(74) { ["id"]=> string(3) "858" ["pdf_add"]=> string(92) "http://www.infineon.com/dgdl/DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "IPL60R2K1C6SATMA1-ND" ["zzsbh"]=> string(17) "IPL60R2K1C6SATMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(17) "MOSFET N-CH 8TSON" ["xl"]=> string(13) "CoolMOS™ C6" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "2.3A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "2.1 欧姆 @ 760mA,10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 60µA" ["bt_vgs_sjdh"]=> string(11) "6.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "140pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "21.6W(Tc)" ["gzwd"]=> string(23) "-40°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPL60R2K1C6SATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: MOSFET N-CH 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 858 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):600V
电流-连续漏极(id):2.3A(Tc)
Vgs(最大值):±20V
功率-最大值:21.6W(Tc)
工作温度:-40°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039858
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPL60R2K1C6SATMA1' ) LIMIT 1
array(74) { ["id"]=> string(3) "911" ["pdf_add"]=> string(92) "http://www.infineon.com/dgdl/DS_IPL60R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d637950016b" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg" ["images"]=> string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "IPL60R1K5C6SATMA1-ND" ["zzsbh"]=> string(17) "IPL60R1K5C6SATMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(17) "MOSFET N-CH 8TSON" ["xl"]=> string(13) "CoolMOS™ C6" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "3A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "1.5 欧姆 @ 1.1A,10V" ["bt_id_vgs_zdz"]=> string(12) "3.5V @ 90µA" ["bt_vgs_sjdh"]=> string(11) "9.4nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "200pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "26.6W(Tc)" ["gzwd"]=> string(23) "-40°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPL60R1K5C6SATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: MOSFET N-CH 8TSON
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 911 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):600V
电流-连续漏极(id):3A(Tc)
Vgs(最大值):±20V
功率-最大值:26.6W(Tc)
工作温度:-40°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039911
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPL60R1K5C6SATMA1' ) LIMIT 1
array(74) { ["id"]=> string(3) "963" ["pdf_add"]=> string(92) "http://www.infineon.com/dgdl/DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "IPL65R1K5C6SATMA1-ND" ["zzsbh"]=> string(17) "IPL65R1K5C6SATMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET N-CH 650V 3A THIN-PAK" ["xl"]=> string(13) "CoolMOS™ C6" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(10) "3A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "1.5 欧姆 @ 1A,10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 100µA" ["bt_vgs_sjdh"]=> string(10) "11nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "225pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "26.6W(Tc)" ["gzwd"]=> string(23) "-40°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPL65R1K5C6SATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: MOSFET N-CH 650V 3A THIN-PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 963 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):650V
电流-连续漏极(id):3A(Tc)
Vgs(最大值):±20V
功率-最大值:26.6W(Tc)
工作温度:-40°C ~ 150°C(TJ)
丝印:(请登录)
料号:1039963
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPL65R1K5C6SATMA1' ) LIMIT 1
array(74) { ["id"]=> string(4) "2551" ["pdf_add"]=> string(92) "http://www.infineon.com/dgdl/DS_IPL65R1K0C6S_2_0.pdf?fileId=5546d4614755559a0147592562350070" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "IPL65R1K0C6SATMA1-ND" ["zzsbh"]=> string(17) "IPL65R1K0C6SATMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 650V 4.2A THIN-PAK" ["xl"]=> string(13) "CoolMOS™ C6" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(12) "4.2A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(21) "1 欧姆 @ 1.5A,10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 150µA" ["bt_vgs_sjdh"]=> string(10) "15nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "328pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "34.7W(Tc)" ["gzwd"]=> string(23) "-40°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPL65R1K0C6SATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: MOSFET N-CH 650V 4.2A THIN-PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2551 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):650V
电流-连续漏极(id):4.2A(Tc)
Vgs(最大值):±20V
功率-最大值:34.7W(Tc)
工作温度:-40°C ~ 150°C(TJ)
丝印:(请登录)
料号:10392551
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPL65R1K0C6SATMA1' ) LIMIT 1
array(74) { ["id"]=> string(4) "2744" ["pdf_add"]=> string(92) "http://www.infineon.com/dgdl/DS_IPL65R650C6S_2_0.pdf?fileId=5546d4614755559a01475d375b530145" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(1) "-" ["images"]=> string(1) " " ["images_dir"]=> string(0) "" ["ljbh"]=> string(20) "IPL65R650C6SATMA1-ND" ["zzsbh"]=> string(17) "IPL65R650C6SATMA1" ["zddgs"]=> string(4) "5000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "MOSFET N-CH 650V 6.7A THIN-PAK" ["xl"]=> string(13) "CoolMOS™ C6" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "650V" ["dl_lxlj"]=> string(12) "6.7A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "650 毫欧 @ 2.1A,10V" ["bt_id_vgs_zdz"]=> string(13) "3.5V @ 210µA" ["bt_vgs_sjdh"]=> string(10) "21nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "440pF @ 100V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "56.8W(Tc)" ["gzwd"]=> string(23) "-40°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPL65R650C6SATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: MOSFET N-CH 650V 6.7A THIN-PAK
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 2744 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):650V
电流-连续漏极(id):6.7A(Tc)
Vgs(最大值):±20V
功率-最大值:56.8W(Tc)
工作温度:-40°C ~ 150°C(TJ)
丝印:(请登录)
料号:10392744
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPL65R650C6SATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "51019" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IPLK60R1K5PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd787ece33d8f" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["images_dir"]=> string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IPLK60R1K5PFD7ATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(13) "LOW POWER_NEW" ["xl"]=> string(15) "CoolMOS™ PFD7" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "3.8A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(24) "1.5 欧姆 @ 700mA,10V" ["bt_id_vgs_zdz"]=> string(12) "4.5V @ 40µA" ["bt_vgs_sjdh"]=> string(11) "4.6nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "169pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "25W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607936171" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPLK60R1K5PFD7ATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: LOW POWER_NEW
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51019 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):600V
电流-连续漏极(id):3.8A(Tc)
Vgs(最大值):±20V
功率-最大值:25W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103951019
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPLK60R1K5PFD7ATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "51033" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IPLK60R1K0PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd791157e3d92" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["images_dir"]=> string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IPLK60R1K0PFD7ATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(13) "LOW POWER_NEW" ["xl"]=> string(15) "CoolMOS™ PFD7" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(12) "5.2A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(19) "1 欧姆 @ 1A,10V" ["bt_id_vgs_zdz"]=> string(12) "4.5V @ 50µA" ["bt_vgs_sjdh"]=> string(9) "6nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "230pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(13) "31.3W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607936194" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPLK60R1K0PFD7ATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: LOW POWER_NEW
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51033 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):600V
电流-连续漏极(id):5.2A(Tc)
Vgs(最大值):±20V
功率-最大值:31.3W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103951033
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPLK60R1K0PFD7ATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "51052" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["images_dir"]=> string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IPLK60R600PFD7ATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(13) "LOW POWER_NEW" ["xl"]=> string(15) "CoolMOS™ PFD7" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(10) "7A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "600 毫欧 @ 1.7A,10V" ["bt_id_vgs_zdz"]=> string(12) "4.5V @ 80µA" ["bt_vgs_sjdh"]=> string(11) "8.5nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "344pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "45W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607936250" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPLK60R600PFD7ATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: LOW POWER_NEW
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51052 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):600V
电流-连续漏极(id):7A(Tc)
Vgs(最大值):±20V
功率-最大值:45W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103951052
量大可议价
起订量:10 修改
包装量: 修改
咨询客服
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPLK60R600PFD7ATMA1' ) LIMIT 1
array(74) { ["id"]=> string(5) "51074" ["pdf_add"]=> string(117) "https://www.infineon.com/dgdl/Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(33) "/wcsstore/CN/images/pna-zh-cn.jpg" ["images_dir"]=> string(36) "./images/1039/IPL60R225CFD7AUMA1.jpg" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(19) "IPLK60R360PFD7ATMA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(13) "LOW POWER_NEW" ["xl"]=> string(15) "CoolMOS™ PFD7" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(27) "MOSFET(金属氧化物)" ["ldjdy"]=> string(4) "600V" ["dl_lxlj"]=> string(11) "13A(Tc)" ["qddy"]=> string(3) "10V" ["bt_id_vgs_rds"]=> string(23) "360 毫欧 @ 2.9A,10V" ["bt_id_vgs_zdz"]=> string(13) "4.5V @ 140µA" ["bt_vgs_sjdh"]=> string(12) "12.7nC @ 10V" ["vgs_zdz"]=> string(5) "±20V" ["bt_vds_srdr"]=> string(12) "534pF @ 400V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(11) "74W(Tc)" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(11) "8-PowerTDFN" ["gysqjfz"]=> string(17) "Thin-PAK(5x6)" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> NULL ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> NULL ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1607936361" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } }
型号: IPLK60R360PFD7ATMA1复制
状态: 在售 修改
品牌: Infineon/英飞凌复制
封装:Thin-PAK(5x6)
外壳:8-PowerTDFN
描述: LOW POWER_NEW
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 51074 ) LIMIT 1
Fet类型:N 通道
漏源极电压(vdss):600V
电流-连续漏极(id):13A(Tc)
Vgs(最大值):±20V
功率-最大值:74W(Tc)
工作温度:-55°C ~ 150°C(TJ)
丝印:(请登录)
料号:103951074
量大可议价
起订量:10 修改
包装量: 修改
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPLK60R360PFD7ATMA1' ) LIMIT 1

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