产品属性 | 属性值 |
---|---|
系列 | - |
存储器格式: | DRAM |
存储容量: | 256Mb (16M x 16) |
存储器接口: | 700ps |
电压-电源: | 2.3V ~ 2.7V |
存储器类型: | 易失 |
工作温度: | -40°C ~ 85°C(TA) |
同类热销产品 | ||
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AS4C16M16D1-5BINAlliance Memory, Inc.60-TFBGA(8x13)50
IC DRAM 256M PARALLEL 60TFBGA
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AS4C16M16D1-5BCNAlliance Memory, Inc.60-TFBGA(8x13)262
IC DRAM 256MBIT PARALLEL 60TFBGA
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AS4C16M16D1-5BCNTRAlliance Memory, Inc.60-TFBGA(8x13)749
IC DRAM 256M PARALLEL 60TFBGA
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IS43R16320D-6BLISSI/芯成60-TFBGA(8x13)3087
IC DRAM 512M PARALLEL 60TFBGA
|
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IS43R86400D-6BLISSI/芯成60-TFBGA(8x13)3088
IC DRAM 512M PARALLEL 60TFBGA
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IS43R16320D-6BLI-TRISSI/芯成60-TFBGA(8x13)3123
IC DRAM 512M PARALLEL 60TFBGA
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IS43R86400D-6BLI-TRISSI/芯成60-TFBGA(8x13)3124
IC DRAM 512M PARALLEL 60TFBGA
|
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IS43R16320D-5BLISSI/芯成60-TFBGA(8x13)3128
IC DRAM 512M PARALLEL 60TFBGA
|
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IS43R86400D-5BLISSI/芯成60-TFBGA(8x13)3129
IC DRAM 512M PARALLEL 60TFBGA
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IS46R16160D-6BLA2ISSI/芯成60-TFBGA(8x13)3152
IC DRAM 256M PARALLEL 60TFBGA
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IS43R16320D-6BL-TRISSI/芯成60-TFBGA(8x13)3246
IC DRAM 512M PARALLEL 60TFBGA
|
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IS43R86400D-6BL-TRISSI/芯成60-TFBGA(8x13)3247
IC DRAM 512M PARALLEL 60TFBGA
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