array(74) {
["id"]=>
string(5) "29616"
["pdf_add"]=>
string(94) "https://www.infineon.com/assets/row/public/documents/24/49/infineon-irlml2803-datasheet-en.pdf"
["pdf_dir"]=>
string(52) "./datasheet/1039/infineon-irlml2803-datasheet-en.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(76) "//media.digikey.com/Renders/International%20Rectifier%20Renders/SOT-23-3.jpg"
["images"]=>
string(77) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/417_SOT-23-3.jpg"
["images_dir"]=>
string(29) "./images/1039/IRLML2402TR.jpg"
["ljbh"]=>
string(17) "IRLML2803PBFTR-ND"
["zzsbh"]=>
string(14) "IRLML2803TRPBF"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "84000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.649470"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1681179571"
["ms"]=>
string(27) "MOSFET N-CH 30V 1.2A SOT-23"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "1.2A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(24) "250 毫欧 @ 910mA，10V"
["bt_id_vgs_zdz"]=>
string(11) "1V @ 250µA"
["bt_vgs_sjdh"]=>
string(9) "5nC @ 10V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(10) "85pF @ 25V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(13) "540mW（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(27) "TO-236-3，SC-59，SOT-23-3"
["gysqjfz"]=>
string(16) "Micro3™/SOT-23"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(5) "B****"
["gl_dmtp"]=>
string(46) "JtgFetMosfetDGlDm/2020-08-09/5f2edf483807c.jpg"
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "1"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "804"
["ljzt"]=>
string(6) "爆款"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "1"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "2"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：Micro3™/SOT-23
外壳：TO-236-3，SC-59，SOT-23-3
描述：
MOSFET N-CH 30V 1.2A SOT-23
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 29616 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：1.2A（Ta）
Vgs(最大值)：±20V
功率-最大值：540mW（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
带卷（TR）
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLML2803TRPBF' ) LIMIT 1
供应商:
库存:15K+
|
array(74) {
["id"]=>
string(5) "29791"
["pdf_add"]=>
string(64) "http://www.irf.com/product-info/datasheets/data/irLML0030pbf.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(76) "//media.digikey.com/Renders/International%20Rectifier%20Renders/SOT-23-3.jpg"
["images"]=>
string(78) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/3-SO-2.92-1.3-0.96.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(19) "IRLML0030TRPBFTR-ND"
["zzsbh"]=>
string(14) "IRLML0030TRPBF"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(5) "18000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1596907447"
["ms"]=>
string(29) "MOSFET N-CH 30V 5.3A SOT-23-3"
["xl"]=>
string(8) "HEXFET®"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(27) "MOSFET（金属氧化物）"
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(12) "5.3A（Ta）"
["qddy"]=>
string(10) "4.5V，10V"
["bt_id_vgs_rds"]=>
string(22) "27 毫欧 @ 5.2A，10V"
["bt_id_vgs_zdz"]=>
string(12) "2.3V @ 25µA"
["bt_vgs_sjdh"]=>
string(12) "2.6nC @ 4.5V"
["vgs_zdz"]=>
string(5) "±20V"
["bt_vds_srdr"]=>
string(11) "382pF @ 15V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(12) "1.3W（Ta）"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(27) "TO-236-3，SC-59，SOT-23-3"
["gysqjfz"]=>
string(16) "Micro3™/SOT-23"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "3000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "3"
["gl_dm"]=>
string(5) "I****"
["gl_dmtp"]=>
string(46) "JtgFetMosfetDGlDm/2020-08-09/5f2edf483807c.jpg"
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(0) ""
["gl_gnd"]=>
string(0) ""
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "1"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(3) "804"
["ljzt"]=>
string(6) "爆款"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "1"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "2"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：Micro3™/SOT-23
外壳：TO-236-3，SC-59，SOT-23-3
描述：
MOSFET N-CH 30V 5.3A SOT-23-3
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 29791 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：30V
电流-连续漏极(id)：5.3A（Ta）
Vgs(最大值)：±20V
功率-最大值：1.3W（Ta）
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
3000个/
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLML0030TRPBF' ) LIMIT 1
供应商:
库存:60K+
|
