array(74) {
["id"]=>
string(5) "27855"
["pdf_add"]=>
string(132) "http://www.infineon.com/dgdl/BSZ0901NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f20f7321863dd"
["pdf_dir"]=>
string(37) "./datasheet/1039/BSZ0901NS_Rev2.1.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(62) "//media.digikey.com/Renders/Infineon%20Renders/8-PowerTDFN.jpg"
["images"]=>
string(82) "https://www.chenkeiot.com/Public/imagesmk/Renders/Infineon_Renders/8-PowerTDFN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(14) "BSZ0901NSTR-ND"
["zzsbh"]=>
string(9) "BSZ0901NS"
["zddgs"]=>
string(4) "5000"
["xysl"]=>
string(5) "10000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.350000"
["gys_id"]=>
string(3) "291"
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(20) "MOSFET N-CH 30V S308"
["xl"]=>
string(12) "OptiMOS™"
["zzs"]=>
string(18) "Infineon/英飞凌"
["zzs_new"]=>
string(18) "Infineon/英飞凌"
["zzs_old"]=>
string(21) "Infineon Technologies"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(33) "MOSFET N 通道，金属氧化物"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(25) "22A（Ta），40A（Tc）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(20) "2 毫欧 @ 20A，10V"
["bt_id_vgs_zdz"]=>
string(13) "2.2V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "45nC @ 10V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "2850pF @ 15V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(3) "50W"
["gzwd"]=>
string(23) "-55°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(11) "8-POWERTDFN"
["gysqjfz"]=>
string(24) "PG-TSDSON-8（3.3X3.3）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "爆款"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：PG-TSDSON-8（3.3X3.3）
外壳：8-POWERTDFN
描述：
MOSFET N-CH 30V S308
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 27855 ) LIMIT 1
Fet类型：MOSFET N 通道，金属氧化物
漏源极电压(vdss)：30V
电流-连续漏极(id)：22A（Ta），40A（Tc）
Vgs(最大值)：
功率-最大值：50W
工作温度：-55°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
5000个/
带卷（TR）
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSZ0901NS' ) LIMIT 1
|
