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array(75) {
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string(0) ""
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string(13) "VBsemi/微碧"
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string(13) "VBsemi/微碧"
["zzs_old"]=>
string(23) "VBsemi(微碧半导体)"
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NULL
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NULL
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string(4) "1039"
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["url"]=>
string(11) "c1039158372"
}
SELECT a.mpn_td_pintopin,b.* FROM golon_jtg_fet_mosfet_d_td a LEFT JOIN golon_jtg_fet_mosfet_d b on a.mpnid=b.id WHERE ( `mpnid` = '25329' ) LIMIT 1
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IPP060N06N-VBVBsemi/微碧TO220
58372
TO220；N—Channel沟道,60V；50A；RDS(ON)=24mΩ@VGS=10V,VGS=20V；Vth=1~2.5V；
1Fet类型1：MOSFET N 通道，金属氧化物
2漏源极电压(vdss)2：60V
3电流-连续漏极(id)3：17A（Ta），45A（Tc）
4Vgs(最大值)4：
5功率-最大值：3W
6工作温度：-55°C ~ 175°C（TJ）
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