array(73) {
["id"]=>
string(5) "54549"
["pdf_add"]=>
string(94) "https://atta.szlcsc.com/upload/public/pdf/source/20230816/942D517613835FC047F1653880384172.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(81) "https://media.digikey.com/Renders/Micro%20Commercial%20Renders/353~DFN5060~~8.jpg"
["images"]=>
NULL
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(8) "VBQA1302"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "2.940000"
["gys_id"]=>
string(3) "370"
["num"]=>
string(1) " "
["price_addtime"]=>
string(10) "1705649009"
["ms"]=>
string(91) "DFN8(5X6);N—Channel沟道,30V;160A;RDS(ON)=1.8mΩ@VGS=10V,VGS=20V;Vth=1.5~2.5V;"
["xl"]=>
string(0) ""
["zzs"]=>
string(13) "VBsemi/微碧"
["zzs_new"]=>
string(13) "VBsemi/微碧"
["zzs_old"]=>
string(23) "VBsemi(微碧半导体)"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(17) "N—Channel沟道"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "30V"
["dl_lxlj"]=>
string(4) "160A"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(0) ""
["bt_id_vgs_zdz"]=>
string(0) ""
["bt_vgs_sjdh"]=>
string(0) ""
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(0) ""
["fetgn"]=>
string(0) ""
["gn_zdz"]=>
string(0) ""
["gzwd"]=>
string(0) ""
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(11) "8-PowerTDFN"
["gysqjfz"]=>
string(17) "8-DFN-EP(5X6)"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(4) "5000"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "8"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "4"
["gl_gnd"]=>
string(7) "5,6,7,8"
["gl_jz"]=>
string(5) "1,2,3"
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
NULL
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "1"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(16) "N沟道 30V 100A"
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(11) "CSD17301Q5A"
["yqjtd_jianrong"]=>
string(1) " "
["url"]=>
string(11) "c1039154549"
}
SELECT a.mpn_td_pintopin,b.* FROM golon_jtg_fet_mosfet_d_td a LEFT JOIN golon_jtg_fet_mosfet_d b on a.mpnid=b.id WHERE ( `mpnid` = '45519' ) LIMIT 1
|
VBQA1302VBsemi/微碧8-DFN-EP(5X6)
54549
DFN8(5X6);N—Channel沟道,30V;160A;RDS(ON)=1.8mΩ@VGS=10V,VGS=20V;Vth=1.5~2.5V;
1Fet类型1:N 通道
2漏源极电压(vdss)2:30V
3电流-连续漏极(id)3:100A
4Vgs(最大值)4:20V
5功率-最大值:2W
6工作温度:-55°C ~ 150°C(TJ)
|