温馨提示:图片仅供参考,商品以实物为准

IRF7341TRPBF

复制 状态: 在售

制造商编号:IRF7341TRPBF复制

制造商名称:Infineon/英飞凌复制

制造商封装:8-SOIC(宽3.9mm p1.27mm)

商品类别:多通道MOS管

商品编号:1041-341

商品描述:MOSFET 2N-CH 55V 4.7A 8-SOIC

包装数量:-

包装规格:

购买数量:
小计: 0.00
  • 现货订购: 0pcs
  • 自营库存:0pcs
  • 国内库存:-
  • 厂家库存:-
  • 海外库存:-可咨询
  •  
  • 最新起订量:-
  • 增          量:1

价格(含税)

参考价格:0.000000
详细参数
产品属性 属性值
SELECT COLUMN_NAME as bt,column_comment as nr,SUBSTRING(COLUMN_COMMENT,2,1) as zss_px FROM INFORMATION_SCHEMA.Columns WHERE table_name='golon_jtg_fet_mosfet_zl' AND table_schema='golon' and COLUMN_COMMENT like '*%' ORDER by zss_px 系列 HEXFET®
Fet类型: 2 N-通道(双)
漏源极电压(vdss): 55V
电流-连续漏极(id): 4.7A
最大功率值: 2W
Fet功能: 逻辑电平门
工作温度: -55°C ~ 150°C(TJ)
同类热销产品
array(70) { ["id"]=> string(3) "341" ["pdf_add"]=> string(62) "http://www.irf.com/product-info/datasheets/data/irf7341pbf.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["ljbh"]=> string(15) "IRF7341PBFTR-ND" ["zzsbh"]=> string(12) "IRF7341TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "12000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2N-CH 55V 4.7A 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道(双)" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(4) "4.7A" ["bt_id_vgs_rds"]=> string(22) "50 毫欧 @ 4.7A,10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["bt_vds_srdr"]=> string(11) "740pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C(TJ)" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " ["url"]=> string(9) "c10411341" } SELECT a.mpn_td_pintopin,b.* FROM golon_jtg_fet_mosfet_zl_td a LEFT JOIN golon_jtg_fet_mosfet_zl b on a.mpnid=b.id WHERE ( `mpnid` = '341' ) LIMIT 1
IRF7341TRPBFInfineon/英飞凌8-SO 341
MOSFET 2N-CH 55V 4.7A 8-SOIC
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
STS4DNF60LST/意法半导体8-SO1
MOSFET 2N-CH 60V 4A 8-SOIC
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
DMC3021LSD-13DIODES/美台8-SO70
MOSFET N/P-CH 30V 8.5A/7A 8SO
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
DMN6040SSD-13DIODES/美台8-SO82
MOSFET 2N-CH 60V 5A 8SO
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
FDS9926AONSEMI/安森美8-SO89
MOSFET 2N-CH 20V 6.5A 8SOIC
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
SI9933CDY-T1-GE3Vishay/威世8-SO91
MOSFET 2P-CH 20V 4A 8-SOIC
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
FDS9945ONSEMI/安森美8-SO98
MOSFET 2N-CH 60V 3.5A 8SOIC
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
FDS6930BONSEMI/安森美8-SO101
MOSFET 2N-CH 30V 5.5A 8SOIC
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
SI4936BDY-T1-E3Vishay/威世8-SO105
MOSFET 2N-CH 30V 6.9A 8-SOIC
1Fet类型1:2 N-通道(双) 5Fet功能5:逻辑电平门 2漏源极电压(vdss)2:55V 3电流-连续漏极(id)3:4.7A 4最大功率值4:2W 6工作温度6:-55°C ~ 150°C(TJ)
复制成功
复制成功
销售在线 销售在线 工程师在线 工程师在线 电话咨询

销售在线

刘s:2355289363

手机: 15074164838

销售在线

陈s:2355289368

手机: 13510573285

工程师在线

吴工:2355289360

手机: 13824329149

工程师在线

陈工:2355289365

手机: 15818753382

电话咨询

0755-28435922