产品属性 | 属性值 |
---|---|
系列 | XPT™, GenX3™ |
IGBT 类型: | - |
电压-集射极击穿(最大值): | 650V |
电流-集电极(Ic)(最大值): | 410A |
最大功率值: | 1560W |
开关能量: | 5mJ(开),4mJ(关) |
工作温度: | -55°C ~ 175°C(TJ) |
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APT70GR120LMicrochip/微芯TO-2641233
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APT80GA90LD40Microchip/微芯TO-2641256
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APT85GR120LMicrochip/微芯TO-2641263
IGBT 1200V 170A 962W TO264
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IXBK75N170AIXYS/艾赛斯TO-2641412
IGBT 1700V 110A 1040W TO264
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BIMOSFET 2500V 75A MONO TO-247AD
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GPA042A100L-NDSemiQTO-2641768
IGBT 1000V 60A 463W TO264
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GPA040A120L-NDSemiQTO-2641780
IGBT 1200V 80A 455W TO264
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