| 封装图 | 商品描述 | 综合参数 | 封装规格/资料 | 价格 | 购买数量/库存 | 操作 |
|---|
| 封装图 | 商品描述 | 综合参数 | 封装规格/资料 | 价格(含税) | 数量 | 操作 |
|---|---|---|---|---|---|---|
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
爆款
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'Infineon/英飞凌' ) LIMIT 1
品牌:
Infineon/英飞凌复制
封装:PG-HSOF-8-1
外壳:8-PowerSFN
描述:
MOSFET N-CH 100V 300A 8HSOF
|
Fet类型:
N 通道
漏源极电压(vdss):
100V
电流-连续漏极(id):
300A(Tc)
Vgs(最大值):
±20V
功率-最大值:
375W(Tc)
工作温度:
-55°C ~ 175°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IPT015N10N5ATMA1' ) LIMIT 1
供应商:1
库存:23K+
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:TO-264AA(IXFK)
外壳:TO-264-3,TO-264AA
描述:
MOSFET N-CH 1000V 15A TO-264
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±20V
功率-最大值:
360W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFK15N100Q' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:PLUS247™-3
外壳:TO-247-3
描述:
MOSFET N-CH 1KV 15A PLUS247
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±20V
功率-最大值:
360W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
类别:
单通道MOS管
等级:-
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFX15N100' ) LIMIT 1
|
||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:TO-247AD(IXFH)
外壳:TO-247-3
描述:
MOSFET N-CH 1000V 15A TO-247
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±20V
功率-最大值:
360W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFH15N100Q' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:TO-247AD(IXFH)
外壳:TO-247-3
描述:
MOSFET N-CH 1000V 15A TO-247
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±20V
功率-最大值:
360W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
类别:
单通道MOS管
等级:-
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFH15N100' ) LIMIT 1
|
||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:TO-247AD(IXFH)
外壳:TO-247-3
描述:
MOSFET N-CH 1000V 15A TO-247
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±30V
功率-最大值:
543W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFH15N100P' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:ISOPLUS247™
外壳:ISOPLUS247™
描述:
MOSFET N-CH 1000V ISOPLUS247
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
-
Vgs(最大值):
-
功率-最大值:
-
工作温度:
-
|
类别:
单通道MOS管
等级:-
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFR15N100P' ) LIMIT 1
|
||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:TO-268
外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA
描述:
MOSFET N-CH 1000V 15A TO-268
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±20V
功率-最大值:
360W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT15N100Q' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:PLUS220
外壳:TO-220-3(SMT)标片
描述:
MOSFET N-CH 1000V 15A PLUS220
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±30V
功率-最大值:
543W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
类别:
单通道MOS管
等级:-
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFV15N100P' ) LIMIT 1
|
||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:PLUS-220SMD
外壳:PLUS-220SMD
描述:
MOSFET N-CH 1000V 15A PLUS220SMD
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±30V
功率-最大值:
543W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
类别:
单通道MOS管
等级:-
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFV15N100PS' ) LIMIT 1
|
||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:TO-268
外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA
描述:
MOSFET N-CH 1000V 15A TO-268
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±30V
功率-最大值:
690W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFT15N100Q3' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:ISOPLUS247™
外壳:TO-247-3
描述:
MOSFET N-CH 1000V 10A ISOPLUS247
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
10A(Tc)
Vgs(最大值):
±30V
功率-最大值:
400W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFR15N100Q3' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'ST/意法半导体' ) LIMIT 1
品牌:
ST/意法半导体复制
封装:TO-220
外壳:TO-220-3
描述:
MOSFET N-CH 100V 180A TO-220AB
|
Fet类型:
N 通道
漏源极电压(vdss):
100V
电流-连续漏极(id):
180A(Tc)
Vgs(最大值):
±20V
功率-最大值:
315W(Tc)
工作温度:
-55°C ~ 175°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STP315N10F7' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'IXYS/艾赛斯' ) LIMIT 1
品牌:
IXYS/艾赛斯复制
封装:TO-247AD(IXFH)
外壳:TO-247-3
描述:
MOSFET N-CH 1000V 15A TO-247
|
Fet类型:
N 通道
漏源极电压(vdss):
1000V
电流-连续漏极(id):
15A(Tc)
Vgs(最大值):
±30V
功率-最大值:
690W(Tc)
工作温度:
-55°C ~ 150°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IXFH15N100Q3' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'ST/意法半导体' ) LIMIT 1
品牌:
ST/意法半导体复制
封装:H2Pak-2
外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
描述:
MOSFET N-CH 100V 180A H2PAK-2
|
Fet类型:
N 通道
漏源极电压(vdss):
100V
电流-连续漏极(id):
180A(Tc)
Vgs(最大值):
±20V
功率-最大值:
315W(Tc)
工作温度:
-55°C ~ 175°C(TJ)
|
10+:
¥29.96
1000+:
¥22.95
量大可议价
|
购买数量不能超过商品库存,已为您修正!
包装量:
1000个/
修改
个
个
起订量:10
修改
总额:
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH315N10F7-2' ) LIMIT 1
|
||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'ST/意法半导体' ) LIMIT 1
品牌:
ST/意法半导体复制
封装:H2PAK-6
外壳:TO-263-7,D²Pak(6 引线 + 接片)
描述:
MOSFET N-CH 100V 180A H2PAK-6
|
Fet类型:
N 通道
漏源极电压(vdss):
100V
电流-连续漏极(id):
180A(Tc)
Vgs(最大值):
±20V
功率-最大值:
315W(Tc)
工作温度:
-55°C ~ 175°C(TJ)
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
总额:
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'STH315N10F7-6' ) LIMIT 1
|
|||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'Greatest Idea Strategy' ) LIMIT 1
品牌:
Greatest Idea Strategy复制
封装:D-PAK
描述:
|
Fet类型:
N
漏源极电压(vdss):
电流-连续漏极(id):
Vgs(最大值):
功率-最大值:
工作温度:
|
类别:
单通道MOS管
等级:-
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
总额:
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'ME15N10' ) LIMIT 1
|
|
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'Greatest Idea Strategy' ) LIMIT 1
品牌:
Greatest Idea Strategy复制
封装:D-PAK
描述:
|
Fet类型:
N
漏源极电压(vdss):
电流-连续漏极(id):
Vgs(最大值):
功率-最大值:
工作温度:
|
类别:
单通道MOS管
等级:-
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
总额:
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'MEE15N10' ) LIMIT 1
|
|
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'BlueRocket/蓝箭' ) LIMIT 1
品牌:
BlueRocket/蓝箭复制
封装:TO-252
描述:
|
Fet类型:
漏源极电压(vdss):
电流-连续漏极(id):
Vgs(最大值):
功率-最大值:
工作温度:
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
总额:
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BRD15N10' ) LIMIT 1
|
||
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
状态:
在售
修改
SELECT `id`,`MFGR_gj`,`MFGR_qc`,`MFGR_en`,`MFGR_jx`,`MFGR_marking`,`MFGR_stock` FROM `golon_zzs_xq` WHERE ( `MFGR_qc` = 'Gem-micro(晶群科技)' ) LIMIT 1
品牌:
Gem-micro(晶群科技)复制
封装:TO-252
描述:
|
Fet类型:
漏源极电压(vdss):
电流-连续漏极(id):
Vgs(最大值):
功率-最大值:
工作温度:
|
购买数量不能超过商品库存,已为您修正!
包装量:
修改
个
个
起订量:10
修改
总额:
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'GD15N10' ) LIMIT 1
|