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array(71) { ["id"]=> string(4) "3664" ["pdf_add"]=> string(112) "https://www.infineon.com/dgdl/Infineon-DF23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d31b3bcf7559e" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> NULL ["images"]=> string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/780/448%3B-AG-EASY1BM-2%3B-%3B-21.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(0) "" ["zzsbh"]=> string(20) "DF23MR12W1M1B11BPSA1" ["zddgs"]=> string(1) "1" ["xysl"]=> string(1) "1" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(20) "MOSFET MOD 1200V 25A" ["xl"]=> string(11) "CoolSiC™+" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(18) "碳化硅（SiC）" ["ldjdy"]=> string(5) "1200V" ["dl_lxlj"]=> string(11) "25A（Tj）" ["bt_id_vgs_rds"]=> string(33) "45 毫欧 @ 25A，15V（标准）" ["bt_id_vgs_zdz"]=> string(12) "5.55V @ 10mA" ["bt_vgs_sjdh"]=> string(10) "62nC @ 15V" ["bt_vds_srdr"]=> string(13) "1840pF @ 800V" ["gn_zdz"]=> string(4) "20mW" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "底座安装" ["fz_wk"]=> string(6) "模块" ["gysqjfz"]=> string(12) "AG-EASY1BM-2" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> NULL ["gl_gnd"]=> NULL ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> NULL ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(10) "1597906332" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： DF23MR12W1M1B11BPSA1复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：AG-EASY1BM-2
外壳：模块
描述： MOSFET MOD 1200V 25A
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 3664 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：碳化硅（SiC）
漏源极电压(vdss)：1200V
电流-连续漏极(id)：25A（Tj）
最大功率值：20mW
工作温度：-40°C ~ 150°C（TJ）
丝印：(请登录)
料号：10413664
量大可议价
起订量:10 修改
包装量: 修改
个
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'DF23MR12W1M1B11BPSA1' ) LIMIT 1
array(71) { ["id"]=> string(3) "273" ["pdf_add"]=> string(87) "https://www.infineon.com/row/public/documents/24/49/infineon-irlhs6376-datasheet-en.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(74) "//media.digikey.com/Renders/International%20Rectifier%20Renders/6-VDFN.jpg" ["images"]=> string(93) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/6349/448%7E6PQFN-2EP-1-2X2%7E%7E6.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(19) "IRLHS6376TRPBFTR-ND" ["zzsbh"]=> string(14) "IRLHS6376TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "32000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "1.383320" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 2N-CH 30V 3.6A 6PQFN" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(4) "3.6A" ["bt_id_vgs_rds"]=> string(23) "63 毫欧 @ 3.4A，4.5V" ["bt_id_vgs_zdz"]=> string(12) "1.1V @ 10µA" ["bt_vgs_sjdh"]=> string(12) "2.8nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "270pF @ 25V" ["gn_zdz"]=> string(4) "1.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(19) "6-VDFN 裸露焊盘" ["gysqjfz"]=> string(15) "6-PQFN（2X2）" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "6" ["gl_dm"]=> string(4) "6376" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "1" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRLHS6376TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：6-PQFN（2X2）
外壳：6-VDFN 裸露焊盘
描述： MOSFET 2N-CH 30V 3.6A 6PQFN
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 273 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：3.6A
最大功率值：1.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041273
10+: ￥2.10
4000+: ￥1.62
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRLHS6376TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "301" ["pdf_add"]=> string(60) "https://www.irf.com/product-info/datasheets/data/irf7507.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-TSSOP_8-MSOP.jpg" ["images"]=> string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-TSSOP_8-MSOP.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF7507TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF7507TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "12000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.251810" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "MOSFET N/P-CH 20V 1.7A MICRO8" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(11) "2.4A，1.7A" ["bt_id_vgs_rds"]=> string(24) "140 毫欧 @ 1.7A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "700mV @ 250µA" ["bt_vgs_sjdh"]=> string(10) "8nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "260pF @ 15V" ["gn_zdz"]=> string(5) "1.25W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(25) "8-TSSOP,8-MSOP(3.00mm宽)" ["gysqjfz"]=> string(9) "MICRO8™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7507TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：MICRO8™
外壳：8-TSSOP,8-MSOP(3.00mm宽)
描述： MOSFET N/P-CH 20V 1.7A MICRO8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 301 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：20V
电流-连续漏极(id)：2.4A，1.7A
最大功率值：1.25W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041301
10+: ￥3.42
4000+: ￥2.63
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7507TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "308" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7509pbf.pdf?fileId=5546d462533600a40153560330a81c5c" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-TSSOP_8-MSOP.jpg" ["images"]=> string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-TSSOP_8-MSOP.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF7509TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF7509TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "MOSFET N/P-CH 30V 2.7A/2A MICRO8" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(9) "2.7A，2A" ["bt_id_vgs_rds"]=> string(23) "110 毫欧 @ 1.7A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "12nC @ 10V" ["bt_vds_srdr"]=> string(11) "210pF @ 25V" ["gn_zdz"]=> string(5) "1.25W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(25) "8-TSSOP,8-MSOP(3.00mm宽)" ["gysqjfz"]=> string(9) "MICRO8™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7509TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：MICRO8™
外壳：8-TSSOP,8-MSOP(3.00mm宽)
描述： MOSFET N/P-CH 30V 2.7A/2A MICRO8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 308 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：2.7A，2A
最大功率值：1.25W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041308
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7509TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "310" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7105pbf.pdf?fileId=5546d462533600a4015355f118ff1ad0" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7105PBFTR-ND" ["zzsbh"]=> string(12) "IRF7105TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.371140" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N/P-CH 25V 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "25V" ["dl_lxlj"]=> string(11) "3.5A，2.3A" ["bt_id_vgs_rds"]=> string(21) "100 毫欧 @ 1A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "27nC @ 10V" ["bt_vds_srdr"]=> string(11) "330pF @ 15V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(5) "f7101" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7105TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N/P-CH 25V 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 310 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：标准
漏源极电压(vdss)：25V
电流-连续漏极(id)：3.5A，2.3A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041310
10+: ￥3.60
4000+: ￥2.77
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7105TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "312" ["pdf_add"]=> string(83) "http://www.infineon.com/dgdl/irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7103PBFTR-ND" ["zzsbh"]=> string(12) "IRF7103TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "16000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.165500" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(26) "MOSFET 2N-CH 50V 3A 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "50V" ["dl_lxlj"]=> string(2) "3A" ["bt_id_vgs_rds"]=> string(21) "130 毫欧 @ 3A，10V" ["bt_id_vgs_zdz"]=> string(11) "3V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "30nC @ 10V" ["bt_vds_srdr"]=> string(11) "290pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7103TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2N-CH 50V 3A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 312 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：50V
电流-连续漏极(id)：3A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041312
10+: ￥3.29
4000+: ￥2.53
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7103TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "315" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7501pbf.pdf?fileId=5546d462533600a401535603017a1c50" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-TSSOP_8-MSOP.jpg" ["images"]=> string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-TSSOP_8-MSOP.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF7501TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF7501TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2N-CH 20V 2.4A MICRO8" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(4) "2.4A" ["bt_id_vgs_rds"]=> string(24) "135 毫欧 @ 1.7A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "700mV @ 250µA" ["bt_vgs_sjdh"]=> string(10) "8nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "260pF @ 15V" ["gn_zdz"]=> string(5) "1.25W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(25) "8-TSSOP,8-MSOP(3.00mm宽)" ["gysqjfz"]=> string(9) "MICRO8™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7501TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：MICRO8™
外壳：8-TSSOP,8-MSOP(3.00mm宽)
描述： MOSFET 2N-CH 20V 2.4A MICRO8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 315 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：20V
电流-连续漏极(id)：2.4A
最大功率值：1.25W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041315
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7501TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "330" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7530pbf.pdf?fileId=5546d462533600a4015356036f371c6c" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(71) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-TSSOP_8-MSOP.jpg" ["images"]=> string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/389/8-TSSOP_8-MSOP.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF7530TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF7530TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.894120" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2N-CH 20V 5.4A MICRO8" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(4) "5.4A" ["bt_id_vgs_rds"]=> string(23) "30 毫欧 @ 5.4A，4.5V" ["bt_id_vgs_zdz"]=> string(13) "1.2V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "26nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "1310pF @ 15V" ["gn_zdz"]=> string(4) "1.3W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(25) "8-TSSOP,8-MSOP(3.00mm宽)" ["gysqjfz"]=> string(9) "MICRO8™" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7530TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：MICRO8™
外壳：8-TSSOP,8-MSOP(3.00mm宽)
描述： MOSFET 2N-CH 20V 5.4A MICRO8
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 330 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：标准
漏源极电压(vdss)：20V
电流-连续漏极(id)：5.4A
最大功率值：1.3W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041330
10+: ￥4.39
4000+: ￥3.38
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7530TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "333" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf9952pbf.pdf?fileId=5546d462533600a401535611f7291dd3" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF9952PBFTR-ND" ["zzsbh"]=> string(12) "IRF9952TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "12000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.390020" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N/P-CH 30V 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "3.5A，2.3A" ["bt_id_vgs_rds"]=> string(23) "100 毫欧 @ 2.2A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "14nC @ 10V" ["bt_vds_srdr"]=> string(11) "190pF @ 15V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF9952TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N/P-CH 30V 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 333 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：3.5A，2.3A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041333
10+: ￥3.63
4000+: ￥2.79
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF9952TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "341" ["pdf_add"]=> string(132) "https://www.infineon.com/assets/row/public/documents/24/49/infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7341PBFTR-ND" ["zzsbh"]=> string(12) "IRF7341TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "12000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.843550" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2N-CH 55V 4.7A 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(4) "4.7A" ["bt_id_vgs_rds"]=> string(22) "50 毫欧 @ 4.7A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["bt_vds_srdr"]=> string(11) "740pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7341TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2N-CH 55V 4.7A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 341 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：55V
电流-连续漏极(id)：4.7A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041341
10+: ￥4.32
4000+: ￥3.32
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7341TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "344" ["pdf_add"]=> string(92) "https://www.infineon.com/assets/row/public/documents/24/49/infineon-irf7343-datasheet-en.pdf" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7343PBFTR-ND" ["zzsbh"]=> string(12) "IRF7343TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.396680" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N/P-CH 55V 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "55V" ["dl_lxlj"]=> string(11) "4.7A，3.4A" ["bt_id_vgs_rds"]=> string(22) "50 毫欧 @ 4.7A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "36nC @ 10V" ["bt_vds_srdr"]=> string(11) "740pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> NULL ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7343TRPBF复制
状态： 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N/P-CH 55V 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 344 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：标准
漏源极电压(vdss)：55V
电流-连续漏极(id)：4.7A，3.4A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041344
10+: ￥5.16
4000+: ￥3.97
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7343TRPBF' ) LIMIT 1
供应商:
库存:44K+
array(71) { ["id"]=> string(3) "345" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7301pbf.pdf?fileId=5546d462533600a4015355f1b66c1af8" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7301PBFTR-ND" ["zzsbh"]=> string(12) "IRF7301TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "16000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2N-CH 20V 5.2A 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "20V" ["dl_lxlj"]=> string(4) "5.2A" ["bt_id_vgs_rds"]=> string(23) "50 毫欧 @ 2.6A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "700mV @ 250µA" ["bt_vgs_sjdh"]=> string(11) "20nC @ 4.5V" ["bt_vds_srdr"]=> string(11) "660pF @ 15V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7301TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2N-CH 20V 5.2A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 345 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：20V
电流-连续漏极(id)：5.2A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041345
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7301TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "351" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7316pbf.pdf?fileId=5546d462533600a4015355f5994e1b34" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7316PBFTR-ND" ["zzsbh"]=> string(12) "IRF7316TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.252870" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET 2P-CH 30V 4.9A 8SO" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(4) "4.9A" ["bt_id_vgs_rds"]=> string(22) "58 毫欧 @ 4.9A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "34nC @ 10V" ["bt_vds_srdr"]=> string(11) "710pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7316TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2P-CH 30V 4.9A 8SO
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 351 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：4.9A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041351
10+: ￥4.94
4000+: ￥3.80
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7316TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "352" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf9362pbf.pdf?fileId=5546d462533600a40153561158c41da7" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF9362TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF9362TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "12000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "2.422660" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(25) "MOSFET 2P-CH 30V 8A 8SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(2) "8A" ["bt_id_vgs_rds"]=> string(20) "21 毫欧 @ 8A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 25µA" ["bt_vgs_sjdh"]=> string(10) "39nC @ 10V" ["bt_vds_srdr"]=> string(12) "1300pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF9362TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2P-CH 30V 8A 8SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 352 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：8A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041352
10+: ￥3.68
4000+: ￥2.83
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF9362TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "357" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7379pbf.pdf?fileId=5546d462533600a4015355f9cbf21b85" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7379PBFTR-ND" ["zzsbh"]=> string(12) "IRF7379TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "4000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N/P-CH 30V 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(6) "标准" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(11) "5.8A，4.3A" ["bt_id_vgs_rds"]=> string(22) "45 毫欧 @ 5.8A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "25nC @ 10V" ["bt_vds_srdr"]=> string(11) "520pF @ 25V" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(0) "" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7379TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N/P-CH 30V 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 357 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：标准
漏源极电压(vdss)：30V
电流-连续漏极(id)：5.8A，4.3A
最大功率值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041357
量大可议价
起订量:10 修改
包装量: 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7379TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "362" ["pdf_add"]=> string(150) "http://www.infineon.com/dgdl/BSO615n_Rev1.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ee69b4aac&location=.en.product" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(63) "//media.digikey.com/Renders/~~Pkg.Case%20or%20Series/8-SOIC.jpg" ["images"]=> string(79) "https://www.chenkeiot.com/Public/Uploads/Pcbfzk/Packjpg/8-SO-4.85-3.9-1.27.webp" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "BSO615NGINTR-ND" ["zzsbh"]=> string(9) "BSO615N G" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(4) "5000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 2N-CH 60V 2.6A 8SOIC" ["xl"]=> string(8) "SIPMOS®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 N 沟道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(4) "2.6A" ["bt_id_vgs_rds"]=> string(24) "150 毫欧 @ 2.6A，4.5V" ["bt_id_vgs_zdz"]=> string(10) "2V @ 20µA" ["bt_vgs_sjdh"]=> string(10) "20nC @ 10V" ["bt_vds_srdr"]=> string(11) "380pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(8) "PG-DSO-8" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： BSO615N G复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：PG-DSO-8
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2N-CH 60V 2.6A 8SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 362 ) LIMIT 1
Fet类型：2 个 N 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：60V
电流-连续漏极(id)：2.6A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041362
量大可议价
起订量:10 修改
包装量: 带卷（TR） 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'BSO615N G' ) LIMIT 1
array(71) { ["id"]=> string(3) "366" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7380pbf.pdf?fileId=5546d462533600a4015355f9da901b89" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF7380TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF7380TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.188370" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2N-CH 80V 3.6A 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(19) "2 N-通道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(4) "3.6A" ["bt_id_vgs_rds"]=> string(22) "73 毫欧 @ 2.2A，10V" ["bt_id_vgs_zdz"]=> string(11) "4V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "23nC @ 10V" ["bt_vds_srdr"]=> string(11) "660pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7380TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2N-CH 80V 3.6A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 366 ) LIMIT 1
Fet类型：2 N-通道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：80V
电流-连续漏极(id)：3.6A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041366
10+: ￥4.84
4000+: ￥3.72
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7380TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "368" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7389PBFTR-ND" ["zzsbh"]=> string(12) "IRF7389TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.001340" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(24) "MOSFET N/P-CH 30V 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(14) "N 和 P 沟道" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(1) "-" ["bt_id_vgs_rds"]=> string(22) "29 毫欧 @ 5.8A，10V" ["bt_id_vgs_zdz"]=> string(11) "1V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "33nC @ 10V" ["bt_vds_srdr"]=> string(11) "650pF @ 25V" ["gn_zdz"]=> string(4) "2.5W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7389TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET N/P-CH 30V 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 368 ) LIMIT 1
Fet类型：N 和 P 沟道
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：-
最大功率值：2.5W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041368
10+: ￥4.56
4000+: ￥3.51
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7389TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "369" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf9358pbf.pdf?fileId=5546d462533600a4015356114ffa1da5" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(17) "IRF9358TRPBFTR-ND" ["zzsbh"]=> string(12) "IRF9358TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(5) "20000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.455810" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(27) "MOSFET 2P-CH 30V 9.2A 8SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "30V" ["dl_lxlj"]=> string(4) "9.2A" ["bt_id_vgs_rds"]=> string(24) "16.3 毫欧 @ 9.2A，10V" ["bt_id_vgs_zdz"]=> string(12) "2.4V @ 25µA" ["bt_vgs_sjdh"]=> string(10) "38nC @ 10V" ["bt_vds_srdr"]=> string(12) "1740pF @ 25V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF9358TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2P-CH 30V 9.2A 8SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 369 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：30V
电流-连续漏极(id)：9.2A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041369
10+: ￥5.25
4000+: ￥4.04
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF9358TRPBF' ) LIMIT 1
array(71) { ["id"]=> string(3) "374" ["pdf_add"]=> string(84) "https://www.infineon.com/dgdl/irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55" ["pdf_dir"]=> string(0) "" ["images_sw"]=> string(1) " " ["images_mk"]=> string(57) "//media.digikey.com/Renders/Infineon%20Renders/8-SOIC.jpg" ["images"]=> string(75) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/448_8-SOIC.jpg" ["images_dir"]=> string(0) "" ["ljbh"]=> string(15) "IRF7329PBFTR-ND" ["zzsbh"]=> string(12) "IRF7329TRPBF" ["zddgs"]=> string(4) "4000" ["xysl"]=> string(4) "8000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "3.537820" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "MOSFET 2P-CH 12V 9.2A 8-SOIC" ["xl"]=> string(8) "HEXFET®" ["zzs"]=> string(18) "Infineon/英飞凌" ["zzs_new"]=> string(18) "Infineon/英飞凌" ["zzs_old"]=> string(21) "Infineon Technologies" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(23) "2 个 P 沟道（双）" ["fetgn"]=> string(15) "逻辑电平门" ["ldjdy"]=> string(3) "12V" ["dl_lxlj"]=> string(4) "9.2A" ["bt_id_vgs_rds"]=> string(23) "17 毫欧 @ 9.2A，4.5V" ["bt_id_vgs_zdz"]=> string(14) "900mV @ 250µA" ["bt_vgs_sjdh"]=> string(11) "57nC @ 4.5V" ["bt_vds_srdr"]=> string(12) "3450pF @ 10V" ["gn_zdz"]=> string(2) "2W" ["gzwd"]=> string(23) "-55°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(24) "8-SOIC(宽3.9mm p1.27mm)" ["gysqjfz"]=> string(4) "8-SO" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(4) "4000" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "8" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(3) "769" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "131" ["wl_num"]=> string(4) "1041" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(23) "golon_jtg_fet_mosfet_zl" ["ch_bm"]=> string(15) "多通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_zl' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1041" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管 多通道MOS管" ["action_name"]=> string(5) "jtg10" ["rate"]=> string(5) "1.168" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.5180" } }
型号： IRF7329TRPBF复制
状态： 在售 修改
品牌： Infineon/英飞凌复制
封装：8-SO
外壳：8-SOIC(宽3.9mm p1.27mm)
描述： MOSFET 2P-CH 12V 9.2A 8-SOIC
SELECT * FROM `golon_jtg_fet_mosfet_zl` WHERE ( `id` = 374 ) LIMIT 1
Fet类型：2 个 P 沟道（双）
Fet功能：逻辑电平门
漏源极电压(vdss)：12V
电流-连续漏极(id)：9.2A
最大功率值：2W
工作温度：-55°C ~ 150°C（TJ）
丝印：(请登录)
料号：1041374
10+: ￥5.37
4000+: ￥4.13
起订量:10 修改
包装量: 4000个/ 修改
个
总额：
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'IRF7329TRPBF' ) LIMIT 1

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