array(72) {
["id"]=>
string(4) "6161"
["pdf_add"]=>
string(79) "https://epc-co.com/epc/Portals/0/epc/documents/datasheets/uP1966E_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1133/uP1966E_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
NULL
["images"]=>
string(76) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/3204/MFG_UP1966E.jpg"
["images_dir"]=>
string(25) "./images/1133/UP1966E.jpg"
["ljbh"]=>
string(0) ""
["zzsbh"]=>
string(7) "UP1966E"
["zddgs"]=>
string(1) "1"
["xysl"]=>
string(1) "1"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "9.992420"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "IC GATE DRVR HALF-BRIDGE 12WLCSP"
["xl"]=>
string(0) ""
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(1) "-"
["tdxl"]=>
string(9) "未设定"
["qdpz"]=>
string(6) "半桥"
["tdlx"]=>
string(9) "独立式"
["qdqs"]=>
string(1) "2"
["sjlx"]=>
string(20) "增强模式 GaN FET"
["dydy"]=>
string(11) "4.5V ~ 5.5V"
["ljdy"]=>
string(11) "0.5V，2.3V"
["dl_fzsc_gr_lc"]=>
string(12) "7.1A，12.5A"
["srlx"]=>
string(9) "非反相"
["gycdy_max"]=>
string(4) "85 V"
["ss_xjsj_dxz"]=>
string(9) "8ns，4ns"
["gzwd"]=>
string(23) "-40°C ~ 125°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(16) "12-UFBGA，WLCSP"
["gysqjfz"]=>
string(23) "12-WLCSP-B（1.6x1.6）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "卷带"
["spq"]=>
string(4) "3000"
["moq"]=>
string(1) "5"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(2) "12"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
NULL
["gl_gnd"]=>
NULL
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
NULL
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(2) "84"
["wl_num"]=>
string(4) "1133"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(16) "golon_pmic_sjqdq"
["ch_bm"]=>
string(15) "栅极驱动器"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(10) "1660529049"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_pmic_sjqdq' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1133"
["parent_id"]=>
string(2) "80"
["lb"]=>
string(33) "电源管理PMIC 栅极驱动器"
["action_name"]=>
string(2) "p4"
["rate"]=>
string(5) "1.113"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4630"
}
}
封装：12-WLCSP-B（1.6x1.6）
外壳：12-UFBGA，WLCSP
描述：
IC GATE DRVR HALF-BRIDGE 12WLCSP
|
SELECT * FROM `golon_pmic_sjqdq` WHERE ( `id` = 6161 ) LIMIT 1
驱动配置：半桥
通道类型：独立式
驱动器数：2
栅极类型：增强模式 GaN FET
电压-电源(v)：4.5V ~ 5.5V
逻辑电压：0.5V，2.3V
电流-峰值输出(灌入,拉出)：7.1A，12.5A
输入类型：非反相
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:5
修改
包装量:
3000个/
卷带
修改
总额：
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'UP1966E' ) LIMIT 1
|
