array(74) {
["id"]=>
string(4) "1217"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC8008_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC8008_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg"
["images"]=>
string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC8008ENGR-ND"
["zzsbh"]=>
string(11) "EPC8008ENGR"
["zddgs"]=>
string(3) "100"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "TRANS GAN 40V 2.7A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "2.7A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(23) "325 毫欧 @ 500mA，5V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "0.18nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(10) "25pF @ 20V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 40V 2.7A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1217 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：40V
电流-连续漏极(id)：2.7A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC8008ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1291"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC8010_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC8010_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg"
["images"]=>
string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC8010ENGR-ND"
["zzsbh"]=>
string(11) "EPC8010ENGR"
["zddgs"]=>
string(3) "100"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "TRANS GAN 100V 2.7A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(12) "2.7A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(23) "160 毫欧 @ 500mA，5V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "0.48nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(10) "55pF @ 50V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(1) "-"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：-
描述：
TRANS GAN 100V 2.7A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1291 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：100V
电流-连续漏极(id)：2.7A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC8010ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1296"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC8003_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC8003_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg"
["images"]=>
string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC8003ENGR-ND"
["zzsbh"]=>
string(11) "EPC8003ENGR"
["zddgs"]=>
string(3) "100"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "TRANS GAN 100V 2.5A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(12) "2.5A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(23) "300 毫欧 @ 500mA，5V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "0.32nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(10) "38pF @ 50V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(24) "-40°C ~ 125°C （TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 100V 2.5A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1296 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：100V
电流-连续漏极(id)：2.5A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 125°C （TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC8003ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1365"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC8005_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC8005_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg"
["images"]=>
string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC8005ENGR-ND"
["zzsbh"]=>
string(11) "EPC8005ENGR"
["zddgs"]=>
string(2) "10"
["xysl"]=>
string(2) "20"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "TRANS GAN 65V 2.9A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "65V"
["dl_lxlj"]=>
string(12) "2.9A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(23) "275 毫欧 @ 500mA，5V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(11) "0.22nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "29pF @ 32.5V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 65V 2.9A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1365 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：65V
电流-连续漏极(id)：2.9A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC8005ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1595"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC2019_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2019_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2019ENG.jpg"
["images"]=>
string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2019ENG.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(13) "917-1055-2-ND"
["zzsbh"]=>
string(10) "EPC2019ENG"
["zddgs"]=>
string(3) "500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "TRANS GAN 200V 8.5A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(4) "200V"
["dl_lxlj"]=>
string(12) "8.5A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(19) "50 毫欧 @ 7A、5V"
["bt_id_vgs_zdz"]=>
string(12) "2.5V @ 1.5mA"
["bt_vgs_sjdh"]=>
string(10) "2.5nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "270pF @ 100V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 200V 8.5A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1595 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：200V
电流-连续漏极(id)：8.5A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
带卷（TR）
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2019ENG' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1811"
["pdf_add"]=>
string(65) "http://epc-co.com/epc/documents/datasheets/EPC2010C_datasheet.pdf"
["pdf_dir"]=>
string(39) "./datasheet/1039/EPC2010C_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(46) "//media.digikey.com/Photos/EPC/MFG_EPC2010.jpg"
["images"]=>
string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2010.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(21) "917-EPC2010CENGRTR-ND"
["zzsbh"]=>
string(12) "EPC2010CENGR"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "TRANS GAN 200V 22A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(4) "200V"
["dl_lxlj"]=>
string(11) "22A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(20) "25 毫欧 @ 12A，5V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 3mA"
["bt_vgs_sjdh"]=>
string(10) "3.7nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "380pF @ 100V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(26) "模具剖面（7 焊条）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具剖面（7 焊条）
外壳：模具
描述：
TRANS GAN 200V 22A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1811 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：200V
电流-连续漏极(id)：22A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
带卷（TR）
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2010CENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1892"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC2025_datasheet.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_EPC2025ENGR.jpg"
["images"]=>
string(72) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2025ENGR.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC2025ENGR-ND"
["zzsbh"]=>
string(11) "EPC2025ENGR"
["zddgs"]=>
string(3) "100"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "TRANS GAN 300V 4A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(4) "300V"
["dl_lxlj"]=>
string(10) "4A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(20) "150 毫欧 @ 3A，5V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(11) "1.85nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "194pF @ 240V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(27) "模具剖面（12 焊条）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具剖面（12 焊条）
外壳：模具
描述：
TRANS GAN 300V 4A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1892 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：300V
电流-连续漏极(id)：4A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2025ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1936"
["pdf_add"]=>
string(78) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2024_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2024_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_EPC202xENGR.jpg"
["images"]=>
string(72) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC202xENGR.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(17) "917-EPC2024ENG-ND"
["zzsbh"]=>
string(10) "EPC2024ENG"
["zddgs"]=>
string(3) "100"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "TRANS GAN 40V 60A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "60A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(21) "1.5 毫欧 @ 37A，5V"
["bt_id_vgs_zdz"]=>
string(11) "2.5V @ 19mA"
["bt_vgs_sjdh"]=>
string(9) "19nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "2100pF @ 20V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 40V 60A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1936 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：40V
电流-连续漏极(id)：60A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2024ENG' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "1988"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC8007_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC8007_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg"
["images"]=>
string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC8007ENGR-ND"
["zzsbh"]=>
string(11) "EPC8007ENGR"
["zddgs"]=>
string(3) "100"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "TRANS GAN 40V 3.8A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(12) "3.8A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(23) "160 毫欧 @ 500mA，5V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 250µA"
["bt_vgs_sjdh"]=>
string(10) "0.3nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(10) "39pF @ 20V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 40V 3.8A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1988 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：40V
电流-连续漏极(id)：3.8A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC8007ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5026"
["pdf_add"]=>
string(65) "http://epc-co.com/epc/documents/datasheets/EPC2012C_datasheet.pdf"
["pdf_dir"]=>
string(39) "./datasheet/1039/EPC2012C_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(47) "//media.digikey.com/Photos/EPC/MFG_EPC2012C.jpg"
["images"]=>
string(69) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2012C.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(21) "917-EPC2012CENGRTR-ND"
["zzsbh"]=>
string(12) "EPC2012CENGR"
["zddgs"]=>
string(4) "3000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "TRANS GAN 200V 5A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(4) "200V"
["dl_lxlj"]=>
string(10) "5A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(20) "100 毫欧 @ 3A，5V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(8) "1nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "100pF @ 100V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(26) "模具剖面（4 焊条）"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具剖面（4 焊条）
外壳：模具
描述：
TRANS GAN 200V 5A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5026 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：200V
电流-连续漏极(id)：5A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
带卷（TR）
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2012CENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "5229"
["pdf_add"]=>
string(79) "https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2016_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2016_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2016_RY.JPG"
["images"]=>
string(78) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/534/MFG_EPC2016_RY.JPG"
["images_dir"]=>
string(25) "./images/1039/EPC2016.JPG"
["ljbh"]=>
string(13) "917-1027-2-ND"
["zzsbh"]=>
string(7) "EPC2016"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(32) "GANFET TRANS 100V 11A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(11) "11A（Ta）"
["qddy"]=>
string(2) "5V"
["bt_id_vgs_rds"]=>
string(20) "16 毫欧 @ 11A，5V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 3mA"
["bt_vgs_sjdh"]=>
string(10) "5.2nC @ 5V"
["vgs_zdz"]=>
string(9) "+6V，-5V"
["bt_vds_srdr"]=>
string(11) "520pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 125°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
GANFET TRANS 100V 11A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5229 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：11A（Ta）
Vgs(最大值)：+6V，-5V
功率-最大值：-
工作温度：-40°C ~ 125°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2016' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6270"
["pdf_add"]=>
string(79) "https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2031_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2031_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg"
["images"]=>
string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/506/MFG_EPC2029-2034.jpg"
["images_dir"]=>
string(30) "./images/1039/EPC2031ENGRT.jpg"
["ljbh"]=>
string(20) "917-EPC2031ENGRTR-ND"
["zzsbh"]=>
string(12) "EPC2031ENGRT"
["zddgs"]=>
string(3) "500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(22) "GANFET NCH 60V 31A DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "31A（Ta）"
["qddy"]=>
string(2) "5V"
["bt_id_vgs_rds"]=>
string(21) "2.6 毫欧 @ 30A，5V"
["bt_id_vgs_zdz"]=>
string(11) "2.5V @ 15mA"
["bt_vgs_sjdh"]=>
string(9) "17nC @ 5V"
["vgs_zdz"]=>
string(9) "+6V，-4V"
["bt_vds_srdr"]=>
string(13) "1800pF @ 300V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
GANFET NCH 60V 31A DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6270 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：31A（Ta）
Vgs(最大值)：+6V，-4V
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2031ENGRT' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6276"
["pdf_add"]=>
string(79) "https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2030_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2030_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg"
["images"]=>
string(80) "//mm.digikey.com/Volume0/opasdata/d220001/medias/images/506/MFG_EPC2029-2034.jpg"
["images_dir"]=>
string(30) "./images/1039/EPC2031ENGRT.jpg"
["ljbh"]=>
string(20) "917-EPC2030ENGRTR-ND"
["zzsbh"]=>
string(12) "EPC2030ENGRT"
["zddgs"]=>
string(3) "500"
["xysl"]=>
string(4) "6000"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(22) "GANFET NCH 40V 31A DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "31A（Ta）"
["qddy"]=>
string(2) "5V"
["bt_id_vgs_rds"]=>
string(21) "2.4 毫欧 @ 30A，5V"
["bt_id_vgs_zdz"]=>
string(11) "2.5V @ 16mA"
["bt_vgs_sjdh"]=>
string(9) "18nC @ 5V"
["vgs_zdz"]=>
string(9) "+6V，-4V"
["bt_vds_srdr"]=>
string(12) "1900pF @ 20V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
GANFET NCH 40V 31A DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6276 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：40V
电流-连续漏极(id)：31A（Ta）
Vgs(最大值)：+6V，-4V
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2030ENGRT' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6514"
["pdf_add"]=>
string(66) "http://epc-co.com/epc/documents/datasheets/EPC2039_preliminary.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(46) "//media.digikey.com/Photos/EPC/MFG_EPC2039.jpg"
["images"]=>
string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2039.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(20) "917-EPC2039ENGRTR-ND"
["zzsbh"]=>
string(12) "EPC2039ENGRT"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(29) "TRANS GAN 80V 6.8A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "80V"
["dl_lxlj"]=>
string(12) "6.8A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(19) "22 毫欧 @ 6A，5V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 2mA"
["bt_vgs_sjdh"]=>
string(8) "2nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(11) "210pF @ 40V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 80V 6.8A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6514 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：80V
电流-连续漏极(id)：6.8A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
带卷（TR）
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2039ENGRT' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6561"
["pdf_add"]=>
string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2031_preliminary.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg"
["images"]=>
string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC2031ENGR-ND"
["zzsbh"]=>
string(11) "EPC2031ENGR"
["zddgs"]=>
string(2) "10"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "TRANS GAN 60V 31A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(11) "31A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(21) "2.6 毫欧 @ 30A，5V"
["bt_id_vgs_zdz"]=>
string(11) "2.5V @ 15mA"
["bt_vgs_sjdh"]=>
string(9) "17nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(13) "1800pF @ 300V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 60V 31A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6561 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：60V
电流-连续漏极(id)：31A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2031ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6563"
["pdf_add"]=>
string(66) "http://epc-co.com/epc/documents/datasheets/EPC2030_preliminary.pdf"
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg"
["images"]=>
string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(18) "917-EPC2030ENGR-ND"
["zzsbh"]=>
string(11) "EPC2030ENGR"
["zddgs"]=>
string(2) "10"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "TRANS GAN 40V 31A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "31A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(21) "2.4 毫欧 @ 30A，5V"
["bt_id_vgs_zdz"]=>
string(11) "2.5V @ 16mA"
["bt_vgs_sjdh"]=>
string(9) "18nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "1900pF @ 20V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(6) "托盘"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 40V 31A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6563 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：40V
电流-连续漏极(id)：31A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
托盘
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2030ENGR' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "6876"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC2815_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2815_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(46) "//media.digikey.com/Photos/EPC/MFG_EPC2801.jpg"
["images"]=>
string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2801.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(13) "917-1036-2-ND"
["zzsbh"]=>
string(7) "EPC2815"
["zddgs"]=>
string(3) "100"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(28) "TRANS GAN 40V 33A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(27) "GaNFET N 通道，氮化镓"
["js"]=>
string(0) ""
["ldjdy"]=>
string(3) "40V"
["dl_lxlj"]=>
string(11) "33A（Ta）"
["qddy"]=>
string(0) ""
["bt_id_vgs_rds"]=>
string(19) "4 毫欧 @ 33A，5V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 9mA"
["bt_vgs_sjdh"]=>
string(11) "11.6nC @ 5V"
["vgs_zdz"]=>
string(0) ""
["bt_vds_srdr"]=>
string(12) "1200pF @ 20V"
["fetgn"]=>
string(6) "标准"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(12) "表面贴装"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(14) "带卷（TR）"
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
TRANS GAN 40V 33A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6876 ) LIMIT 1
Fet类型：GaNFET N 通道，氮化镓
漏源极电压(vdss)：40V
电流-连续漏极(id)：33A（Ta）
Vgs(最大值)：
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
带卷（TR）
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2815' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9758"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC2036_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2036_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2035-36.jpg"
["images"]=>
string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2035-36.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(13) "917-1100-2-ND"
["zzsbh"]=>
string(7) "EPC2036"
["zddgs"]=>
string(4) "2500"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "GANFET TRANS 100V 1A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(4) "100V"
["dl_lxlj"]=>
string(12) "1.7A（Ta）"
["qddy"]=>
string(2) "5V"
["bt_id_vgs_rds"]=>
string(19) "65 毫欧 @ 1A，5V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 600µA"
["bt_vgs_sjdh"]=>
string(10) ".91nC @ 5V"
["vgs_zdz"]=>
string(9) "+6V，-4V"
["bt_vds_srdr"]=>
string(10) "90pF @ 50V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
GANFET TRANS 100V 1A BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9758 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：100V
电流-连续漏极(id)：1.7A（Ta）
Vgs(最大值)：+6V，-4V
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2036' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9825"
["pdf_add"]=>
string(0) ""
["pdf_dir"]=>
string(0) ""
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(50) "//media.digikey.com/Photos/EPC/MFG_EPC2025ENGR.jpg"
["images"]=>
string(45) "//media.digikey.com/Photos/NoPhoto/pna_zh.jpg"
["images_dir"]=>
string(29) "./images/1039/APT80SM120B.jpg"
["ljbh"]=>
string(13) "917-1125-2-ND"
["zzsbh"]=>
string(7) "EPC2025"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(31) "GAN TRANS 300V 150MO BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(4) "300V"
["dl_lxlj"]=>
string(10) "4A（Ta）"
["qddy"]=>
string(2) "5V"
["bt_id_vgs_rds"]=>
string(20) "150 毫欧 @ 3A，5V"
["bt_id_vgs_zdz"]=>
string(10) "2.5V @ 1mA"
["bt_vgs_sjdh"]=>
string(10) "2.5V @ 1mA"
["vgs_zdz"]=>
string(9) "+6V，-4V"
["bt_vds_srdr"]=>
string(12) "194pF @ 240V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(0) ""
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "0"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
GAN TRANS 300V 150MO BUMPED DIE
|
SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9825 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：300V
电流-连续漏极(id)：4A（Ta）
Vgs(最大值)：+6V，-4V
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
|
|
购买数量不能超过商品库存，已为您修正！
起订量:10
修改
包装量:
修改
咨询客服
|
SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2025' ) LIMIT 1
|
array(74) {
["id"]=>
string(4) "9953"
["pdf_add"]=>
string(64) "http://epc-co.com/epc/documents/datasheets/EPC2035_datasheet.pdf"
["pdf_dir"]=>
string(38) "./datasheet/1039/EPC2035_datasheet.pdf"
["images_sw"]=>
string(1) " "
["images_mk"]=>
string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2035-36.jpg"
["images"]=>
string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2035-36.jpg"
["images_dir"]=>
string(0) ""
["ljbh"]=>
string(13) "917-1099-2-ND"
["zzsbh"]=>
string(7) "EPC2035"
["zddgs"]=>
string(4) "1000"
["xysl"]=>
string(1) "0"
["cfkc"]=>
string(1) "0"
["dj"]=>
string(8) "0.000000"
["gys_id"]=>
string(1) " "
["num"]=>
string(1) " "
["price_addtime"]=>
string(1) "0"
["ms"]=>
string(30) "GANFET TRANS 60V 1A BUMPED DIE"
["xl"]=>
string(6) "eGaN®"
["zzs"]=>
string(3) "EPC"
["zzs_new"]=>
string(9) "未设定"
["zzs_old"]=>
string(3) "EPC"
["lm"]=>
string(6) "未设"
["tdxl"]=>
string(9) "未设定"
["fetlx"]=>
string(8) "N 通道"
["js"]=>
string(21) "GaNFET（氮化镓）"
["ldjdy"]=>
string(3) "60V"
["dl_lxlj"]=>
string(10) "1A（Ta）"
["qddy"]=>
string(2) "5V"
["bt_id_vgs_rds"]=>
string(19) "45 毫欧 @ 1A，5V"
["bt_id_vgs_zdz"]=>
string(13) "2.5V @ 800µA"
["bt_vgs_sjdh"]=>
string(11) "1.15nC @ 5V"
["vgs_zdz"]=>
string(9) "+6V，-4V"
["bt_vds_srdr"]=>
string(11) "115pF @ 30V"
["fetgn"]=>
string(1) "-"
["gn_zdz"]=>
string(1) "-"
["gzwd"]=>
string(23) "-40°C ~ 150°C（TJ）"
["azlx"]=>
string(15) "表面贴装型"
["fz_wk"]=>
string(6) "模具"
["gysqjfz"]=>
string(6) "模具"
["djs"]=>
string(1) "-"
["tag"]=>
string(1) " "
["bz"]=>
string(0) ""
["spq"]=>
string(1) "-"
["moq"]=>
string(2) "10"
["is_rohs"]=>
string(1) "1"
["gl_zz"]=>
string(6) "贴片"
["gl_pin"]=>
string(1) "-"
["gl_dm"]=>
string(1) "-"
["gl_dmtp"]=>
string(0) ""
["symbol"]=>
string(0) ""
["gl_vdd"]=>
string(1) "-"
["gl_gnd"]=>
string(1) "-"
["gl_jz"]=>
string(1) " "
["gl_bdm"]=>
string(1) "4"
["gl_bdmsm"]=>
string(0) ""
["gl_kbc"]=>
string(1) "0"
["gl_dmgx"]=>
string(1) "0"
["pcbfzk_id"]=>
string(0) ""
["pcbfzk"]=>
string(1) "-"
["ljzt"]=>
string(6) "在售"
["jyid"]=>
string(1) "-"
["cat_id"]=>
string(3) "129"
["wl_num"]=>
string(4) "1039"
["admin_id"]=>
string(1) "0"
["mpn_bm"]=>
string(22) "golon_jtg_fet_mosfet_d"
["ch_bm"]=>
string(15) "单通道MOS管"
["lock_dm"]=>
string(1) "1"
["is_use_cat_id"]=>
string(1) "0"
["is_new_time"]=>
string(1) "0"
["ms_c"]=>
string(1) " "
["ytfw"]=>
string(1) "-"
["hot_or_top"]=>
string(1) "0"
["yqjtd_pintopin"]=>
string(1) " "
["yqjtd_jianrong"]=>
string(1) " "
}
|
select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) {
[0]=>
array(7) {
["wl_num"]=>
string(4) "1039"
["parent_id"]=>
string(3) "121"
["lb"]=>
string(26) "晶体管 单通道MOS管"
["action_name"]=>
string(4) "jtg8"
["rate"]=>
string(5) "1.145"
["rate_hot"]=>
string(2) "35"
["moq_rate"]=>
string(6) "1.4950"
}
}
封装：模具
外壳：模具
描述：
GANFET TRANS 60V 1A BUMPED DIE
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SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9953 ) LIMIT 1
Fet类型：N 通道
漏源极电压(vdss)：60V
电流-连续漏极(id)：1A（Ta）
Vgs(最大值)：+6V，-4V
功率-最大值：-
工作温度：-40°C ~ 150°C（TJ）
|
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起订量:10
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包装量:
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SELECT count(a.gys_id) as c FROM golon_gys_file_new a LEFT JOIN golon_gys_brand b on a.gys_id=b.id WHERE ( a.zzsbh = 'EPC2035' ) LIMIT 1
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