EPC公司介绍和产品目录_EPC_专区_授权代理商

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(72) { ["id"]=> string(4) "1217" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8008_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8008ENGR-ND" ["zzsbh"]=> string(11) "EPC8008ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 40V 2.7A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "2.7A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "325 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.18nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "25pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8008ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 2.7A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1217 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：2.7A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391217 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1291" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8010_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8010ENGR-ND" ["zzsbh"]=> string(11) "EPC8010ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 100V 2.7A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "2.7A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "160 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.48nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "55pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(1) "-" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8010ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：- 描述： TRANS GAN 100V 2.7A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1291 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：100V 电流-连续漏极(id)：2.7A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391291 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1296" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8003_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8003ENGR-ND" ["zzsbh"]=> string(11) "EPC8003ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 100V 2.5A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "2.5A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "300 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.32nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "38pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(24) "-40°C ~ 125°C （TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8003ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 100V 2.5A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1296 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：100V 电流-连续漏极(id)：2.5A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 125°C （TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391296 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1365" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8005_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8005ENGR-ND" ["zzsbh"]=> string(11) "EPC8005ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(2) "20" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 65V 2.9A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "65V" ["dl_lxlj"]=> string(12) "2.9A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "275 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.22nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "29pF @ 32.5V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8005ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 65V 2.9A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1365 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：65V 电流-连续漏极(id)：2.9A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391365 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1595" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2019_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2019ENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2019ENG.jpg" ["ljbh"]=> string(13) "917-1055-2-ND" ["zzsbh"]=> string(10) "EPC2019ENG" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 200V 8.5A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "8.5A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "50 毫欧 @ 7A、5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 1.5mA" ["bt_vgs_sjdh"]=> string(10) "2.5nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "270pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2019ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 200V 8.5A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1595 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：200V 电流-连续漏极(id)：8.5A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391595 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1936" ["pdf_add"]=> string(78) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2024_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_EPC202xENGR.jpg" ["images"]=> string(72) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC202xENGR.jpg" ["ljbh"]=> string(17) "917-EPC2024ENG-ND" ["zzsbh"]=> string(10) "EPC2024ENG" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 40V 60A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "60A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "1.5 毫欧 @ 37A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 19mA" ["bt_vgs_sjdh"]=> string(9) "19nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2100pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2024ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 60A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1936 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：60A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391936 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1988" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8007_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8007ENGR-ND" ["zzsbh"]=> string(11) "EPC8007ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 40V 3.8A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "3.8A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "160 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "0.3nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "39pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8007ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 3.8A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1988 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：3.8A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391988 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "5229" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2016_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2016_RY.JPG" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2016_RY.JPG" ["ljbh"]=> string(13) "917-1027-2-ND" ["zzsbh"]=> string(7) "EPC2016" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "GANFET TRANS 100V 11A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "11A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(20) "16 毫欧 @ 11A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 3mA" ["bt_vgs_sjdh"]=> string(10) "5.2nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-5V" ["bt_vds_srdr"]=> string(11) "520pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 125°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2016复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS 100V 11A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5229 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：100V 电流-连续漏极(id)：11A（Ta） Vgs(最大值)：+6V，-5V 功率-最大值：- 工作温度：-40°C ~ 125°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10395229 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6270" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2031_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(20) "917-EPC2031ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2031ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(22) "GANFET NCH 60V 31A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(21) "2.6 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 15mA" ["bt_vgs_sjdh"]=> string(9) "17nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(13) "1800pF @ 300V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2031ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET NCH 60V 31A DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6270 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396270 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6276" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2030_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(20) "917-EPC2030ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2030ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(22) "GANFET NCH 40V 31A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(9) "18nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(12) "1900pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2030ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET NCH 40V 31A DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6276 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396276 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6514" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2039_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/MFG_EPC2039.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2039.jpg" ["ljbh"]=> string(20) "917-EPC2039ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2039ENGRT" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 80V 6.8A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "6.8A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "22 毫欧 @ 6A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 2mA" ["bt_vgs_sjdh"]=> string(8) "2nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "210pF @ 40V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2039ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 80V 6.8A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6514 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：80V 电流-连续漏极(id)：6.8A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396514 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6561" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2031_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(18) "917-EPC2031ENGR-ND" ["zzsbh"]=> string(11) "EPC2031ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 60V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "2.6 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 15mA" ["bt_vgs_sjdh"]=> string(9) "17nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "1800pF @ 300V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2031ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 60V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6561 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：60V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396561 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6563" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2030_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(18) "917-EPC2030ENGR-ND" ["zzsbh"]=> string(11) "EPC2030ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 40V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(9) "18nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1900pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2030ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6563 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396563 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6876" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2815_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/MFG_EPC2801.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2801.jpg" ["ljbh"]=> string(13) "917-1036-2-ND" ["zzsbh"]=> string(7) "EPC2815" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 40V 33A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "33A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "4 毫欧 @ 33A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 9mA" ["bt_vgs_sjdh"]=> string(11) "11.6nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1200pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2815复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 33A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6876 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：33A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396876 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(72) { ["id"]=> string(4) "9758" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2036_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2035-36.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2035-36.jpg" ["ljbh"]=> string(13) "917-1100-2-ND" ["zzsbh"]=> string(7) "EPC2036" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GANFET TRANS 100V 1A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "1.7A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(19) "65 毫欧 @ 1A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 600µA" ["bt_vgs_sjdh"]=> string(10) ".91nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(10) "90pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2036复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS 100V 1A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9758 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10399758 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "9825" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2025_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_EPC2025ENGR.jpg" ["images"]=> string(72) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2025ENGR.jpg" ["ljbh"]=> string(13) "917-1125-2-ND" ["zzsbh"]=> string(7) "EPC2025" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GAN TRANS 300V 150MO BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "300V" ["dl_lxlj"]=> string(10) "4A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(20) "150 毫欧 @ 3A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "2.5V @ 1mA" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(12) "194pF @ 240V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2025复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS 300V 150MO BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9825 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：300V 电流-连续漏极(id)：4A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10399825 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "9953" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2035_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2035-36.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2035-36.jpg" ["ljbh"]=> string(13) "917-1099-2-ND" ["zzsbh"]=> string(7) "EPC2035" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET TRANS 60V 1A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(10) "1A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(19) "45 毫欧 @ 1A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 800µA" ["bt_vgs_sjdh"]=> string(11) "1.15nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(11) "115pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2035复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS 60V 1A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9953 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：1A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10399953 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(5) "11504" ["pdf_add"]=> string(78) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2032_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(18) "917-EPC2032ENGR-ND" ["zzsbh"]=> string(11) "EPC2032ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 100V 48A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "48A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "4 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 11mA" ["bt_vgs_sjdh"]=> string(9) "15nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1530pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2032ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 100V 48A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11504 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：100V 电流-连续漏极(id)：48A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103911504 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(5) "11505" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2033_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/EPC2033ENGR.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC2033ENGR.jpg" ["ljbh"]=> string(18) "917-EPC2033ENGR-ND" ["zzsbh"]=> string(11) "EPC2033ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 150V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "7 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 9mA" ["bt_vgs_sjdh"]=> string(9) "10nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1140pF @ 75V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2033ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 150V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11505 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：150V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103911505 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(5) "11506" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2034_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/EPC2034ENGR.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC2034ENGR.jpg" ["ljbh"]=> string(18) "917-EPC2034ENGR-ND" ["zzsbh"]=> string(11) "EPC2034ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 200V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "10 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "8.5nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "940pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2034ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 200V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11506 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：200V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103911506 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车

封装图	商品描述	综合参数	封装规格/资料	价格(含税)	数量	操作
array(72) { ["id"]=> string(4) "1217" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8008_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8008ENGR-ND" ["zzsbh"]=> string(11) "EPC8008ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 40V 2.7A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "2.7A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "325 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.18nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "25pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8008ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 2.7A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1217 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：2.7A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391217 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1291" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8010_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8010ENGR-ND" ["zzsbh"]=> string(11) "EPC8010ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 100V 2.7A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "2.7A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "160 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.48nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "55pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(1) "-" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8010ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：- 描述： TRANS GAN 100V 2.7A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1291 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：100V 电流-连续漏极(id)：2.7A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391291 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1296" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8003_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8003ENGR-ND" ["zzsbh"]=> string(11) "EPC8003ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 100V 2.5A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "2.5A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "300 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.32nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "38pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(24) "-40°C ~ 125°C （TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8003ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 100V 2.5A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1296 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：100V 电流-连续漏极(id)：2.5A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 125°C （TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391296 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1365" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8005_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8005ENGR-ND" ["zzsbh"]=> string(11) "EPC8005ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(2) "20" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 65V 2.9A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "65V" ["dl_lxlj"]=> string(12) "2.9A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "275 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(11) "0.22nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "29pF @ 32.5V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8005ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 65V 2.9A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1365 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：65V 电流-连续漏极(id)：2.9A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391365 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1595" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2019_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2019ENG.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2019ENG.jpg" ["ljbh"]=> string(13) "917-1055-2-ND" ["zzsbh"]=> string(10) "EPC2019ENG" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "TRANS GAN 200V 8.5A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(12) "8.5A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "50 毫欧 @ 7A、5V" ["bt_id_vgs_zdz"]=> string(12) "2.5V @ 1.5mA" ["bt_vgs_sjdh"]=> string(10) "2.5nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "270pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2019ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 200V 8.5A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1595 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：200V 电流-连续漏极(id)：8.5A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391595 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1936" ["pdf_add"]=> string(78) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2024_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_EPC202xENGR.jpg" ["images"]=> string(72) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC202xENGR.jpg" ["ljbh"]=> string(17) "917-EPC2024ENG-ND" ["zzsbh"]=> string(10) "EPC2024ENG" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 40V 60A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "60A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "1.5 毫欧 @ 37A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 19mA" ["bt_vgs_sjdh"]=> string(9) "19nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "2100pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2024ENG复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 60A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1936 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：60A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391936 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "1988" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC8007_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_TRANS%20GAN.jpg" ["images"]=> string(70) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_TRANS_GAN.jpg" ["ljbh"]=> string(18) "917-EPC8007ENGR-ND" ["zzsbh"]=> string(11) "EPC8007ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 40V 3.8A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(12) "3.8A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(23) "160 毫欧 @ 500mA，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 250µA" ["bt_vgs_sjdh"]=> string(10) "0.3nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(10) "39pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC8007ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 3.8A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 1988 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：3.8A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10391988 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "5229" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2016_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2016_RY.JPG" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2016_RY.JPG" ["ljbh"]=> string(13) "917-1027-2-ND" ["zzsbh"]=> string(7) "EPC2016" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(32) "GANFET TRANS 100V 11A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "11A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(20) "16 毫欧 @ 11A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 3mA" ["bt_vgs_sjdh"]=> string(10) "5.2nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-5V" ["bt_vds_srdr"]=> string(11) "520pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 125°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2016复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS 100V 11A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 5229 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：100V 电流-连续漏极(id)：11A（Ta） Vgs(最大值)：+6V，-5V 功率-最大值：- 工作温度：-40°C ~ 125°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10395229 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6270" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2031_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(20) "917-EPC2031ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2031ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(22) "GANFET NCH 60V 31A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(21) "2.6 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 15mA" ["bt_vgs_sjdh"]=> string(9) "17nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(13) "1800pF @ 300V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2031ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET NCH 60V 31A DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6270 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396270 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6276" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2030_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(20) "917-EPC2030ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2030ENGRT" ["zddgs"]=> string(3) "500" ["xysl"]=> string(4) "6000" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(22) "GANFET NCH 40V 31A DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(9) "18nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(12) "1900pF @ 20V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2030ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET NCH 40V 31A DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6276 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：40V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396276 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6514" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2039_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/MFG_EPC2039.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2039.jpg" ["ljbh"]=> string(20) "917-EPC2039ENGRTR-ND" ["zzsbh"]=> string(12) "EPC2039ENGRT" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 80V 6.8A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "80V" ["dl_lxlj"]=> string(12) "6.8A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "22 毫欧 @ 6A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 2mA" ["bt_vgs_sjdh"]=> string(8) "2nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(11) "210pF @ 40V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2039ENGRT复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 80V 6.8A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6514 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：80V 电流-连续漏极(id)：6.8A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396514 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6561" ["pdf_add"]=> string(80) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2031_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(18) "917-EPC2031ENGR-ND" ["zzsbh"]=> string(11) "EPC2031ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 60V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "2.6 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 15mA" ["bt_vgs_sjdh"]=> string(9) "17nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(13) "1800pF @ 300V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2031ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 60V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6561 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：60V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396561 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6563" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2030_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(18) "917-EPC2030ENGR-ND" ["zzsbh"]=> string(11) "EPC2030ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 40V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(21) "2.4 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 16mA" ["bt_vgs_sjdh"]=> string(9) "18nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1900pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2030ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6563 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396563 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(4) "6876" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2815_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/MFG_EPC2801.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2801.jpg" ["ljbh"]=> string(13) "917-1036-2-ND" ["zzsbh"]=> string(7) "EPC2815" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(28) "TRANS GAN 40V 33A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(3) "40V" ["dl_lxlj"]=> string(11) "33A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "4 毫欧 @ 33A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 9mA" ["bt_vgs_sjdh"]=> string(11) "11.6nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1200pF @ 20V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(14) "带卷（TR）" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2815复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 40V 33A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 6876 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：40V 电流-连续漏极(id)：33A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10396876 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 带卷（TR）修改个个带卷（TR）咨询客服	加入购物车
array(72) { ["id"]=> string(4) "9758" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2036_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2035-36.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2035-36.jpg" ["ljbh"]=> string(13) "917-1100-2-ND" ["zzsbh"]=> string(7) "EPC2036" ["zddgs"]=> string(4) "2500" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GANFET TRANS 100V 1A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(12) "1.7A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(19) "65 毫欧 @ 1A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 600µA" ["bt_vgs_sjdh"]=> string(10) ".91nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(10) "90pF @ 50V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2036复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS 100V 1A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9758 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：100V 电流-连续漏极(id)：1.7A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10399758 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "9825" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2025_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(50) "//media.digikey.com/Photos/EPC/MFG_EPC2025ENGR.jpg" ["images"]=> string(72) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2025ENGR.jpg" ["ljbh"]=> string(13) "917-1125-2-ND" ["zzsbh"]=> string(7) "EPC2025" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(31) "GAN TRANS 300V 150MO BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(4) "300V" ["dl_lxlj"]=> string(10) "4A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(20) "150 毫欧 @ 3A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 1mA" ["bt_vgs_sjdh"]=> string(10) "2.5V @ 1mA" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(12) "194pF @ 240V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "0" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2025复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GAN TRANS 300V 150MO BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9825 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：300V 电流-连续漏极(id)：4A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10399825 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(4) "9953" ["pdf_add"]=> string(64) "http://epc-co.com/epc/documents/datasheets/EPC2035_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2035-36.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2035-36.jpg" ["ljbh"]=> string(13) "917-1099-2-ND" ["zzsbh"]=> string(7) "EPC2035" ["zddgs"]=> string(4) "1000" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(30) "GANFET TRANS 60V 1A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(8) "N 通道" ["js"]=> string(21) "GaNFET（氮化镓）" ["ldjdy"]=> string(3) "60V" ["dl_lxlj"]=> string(10) "1A（Ta）" ["qddy"]=> string(2) "5V" ["bt_id_vgs_rds"]=> string(19) "45 毫欧 @ 1A，5V" ["bt_id_vgs_zdz"]=> string(13) "2.5V @ 800µA" ["bt_vgs_sjdh"]=> string(11) "1.15nC @ 5V" ["vgs_zdz"]=> string(9) "+6V，-4V" ["bt_vds_srdr"]=> string(11) "115pF @ 30V" ["fetgn"]=> string(1) "-" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(15) "表面贴装型" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(0) "" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2035复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： GANFET TRANS 60V 1A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 9953 ) LIMIT 1 Fet类型：N 通道漏源极电压(vdss)：60V 电流-连续漏极(id)：1A（Ta） Vgs(最大值)：+6V，-4V 功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：10399953 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 修改个个咨询客服	加入购物车
array(72) { ["id"]=> string(5) "11504" ["pdf_add"]=> string(78) "http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2032_datasheet.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(49) "//media.digikey.com/Photos/EPC/MFG_EPC2030-32.jpg" ["images"]=> string(71) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/MFG_EPC2030-32.jpg" ["ljbh"]=> string(18) "917-EPC2032ENGR-ND" ["zzsbh"]=> string(11) "EPC2032ENGR" ["zddgs"]=> string(3) "100" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 100V 48A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "100V" ["dl_lxlj"]=> string(11) "48A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "4 毫欧 @ 30A，5V" ["bt_id_vgs_zdz"]=> string(11) "2.5V @ 11mA" ["bt_vgs_sjdh"]=> string(9) "15nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1530pF @ 50V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2032ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 100V 48A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11504 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：100V 电流-连续漏极(id)：48A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103911504 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(5) "11505" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2033_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/EPC2033ENGR.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC2033ENGR.jpg" ["ljbh"]=> string(18) "917-EPC2033ENGR-ND" ["zzsbh"]=> string(11) "EPC2033ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 150V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "150V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(19) "7 毫欧 @ 25A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 9mA" ["bt_vgs_sjdh"]=> string(9) "10nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "1140pF @ 75V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2033ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 150V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11505 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：150V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103911505 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车
array(72) { ["id"]=> string(5) "11506" ["pdf_add"]=> string(66) "http://epc-co.com/epc/documents/datasheets/EPC2034_preliminary.pdf" ["images_sw"]=> string(1) " " ["images_mk"]=> string(46) "//media.digikey.com/Photos/EPC/EPC2034ENGR.jpg" ["images"]=> string(68) "https://www.chenkeiot.com/Public/imagesmk/Photos/EPC/EPC2034ENGR.jpg" ["ljbh"]=> string(18) "917-EPC2034ENGR-ND" ["zzsbh"]=> string(11) "EPC2034ENGR" ["zddgs"]=> string(2) "10" ["xysl"]=> string(1) "0" ["cfkc"]=> string(1) "0" ["dj"]=> string(8) "0.000000" ["gys_id"]=> string(1) " " ["num"]=> string(1) " " ["price_addtime"]=> string(1) "0" ["ms"]=> string(29) "TRANS GAN 200V 31A BUMPED DIE" ["xl"]=> string(6) "eGaN®" ["zzs"]=> string(3) "EPC" ["zzs_new"]=> string(9) "未设定" ["zzs_old"]=> string(3) "EPC" ["lm"]=> string(6) "未设" ["tdxl"]=> string(9) "未设定" ["fetlx"]=> string(27) "GaNFET N 通道，氮化镓" ["js"]=> string(0) "" ["ldjdy"]=> string(4) "200V" ["dl_lxlj"]=> string(11) "31A（Ta）" ["qddy"]=> string(0) "" ["bt_id_vgs_rds"]=> string(20) "10 毫欧 @ 20A，5V" ["bt_id_vgs_zdz"]=> string(10) "2.5V @ 7mA" ["bt_vgs_sjdh"]=> string(10) "8.5nC @ 5V" ["vgs_zdz"]=> string(0) "" ["bt_vds_srdr"]=> string(12) "940pF @ 100V" ["fetgn"]=> string(6) "标准" ["gn_zdz"]=> string(1) "-" ["gzwd"]=> string(23) "-40°C ~ 150°C（TJ）" ["azlx"]=> string(12) "表面贴装" ["fz_wk"]=> string(6) "模具" ["gysqjfz"]=> string(6) "模具" ["djs"]=> string(1) "-" ["tag"]=> string(1) " " ["bz"]=> string(6) "托盘" ["spq"]=> string(1) "-" ["moq"]=> string(2) "10" ["is_rohs"]=> string(1) "1" ["gl_zz"]=> string(6) "贴片" ["gl_pin"]=> string(1) "-" ["gl_dm"]=> string(1) "-" ["gl_dmtp"]=> string(0) "" ["symbol"]=> string(0) "" ["gl_vdd"]=> string(1) "-" ["gl_gnd"]=> string(1) "-" ["gl_jz"]=> string(1) " " ["gl_bdm"]=> string(1) "4" ["gl_bdmsm"]=> string(0) "" ["gl_kbc"]=> string(1) "0" ["gl_dmgx"]=> string(1) "0" ["pcbfzk_id"]=> string(0) "" ["pcbfzk"]=> string(1) "-" ["ljzt"]=> string(6) "在售" ["jyid"]=> string(1) "-" ["cat_id"]=> string(3) "129" ["wl_num"]=> string(4) "1039" ["admin_id"]=> string(1) "0" ["mpn_bm"]=> string(22) "golon_jtg_fet_mosfet_d" ["ch_bm"]=> string(15) "单通道MOS管" ["lock_dm"]=> string(1) "1" ["is_use_cat_id"]=> string(1) "0" ["is_new_time"]=> string(1) "0" ["ms_c"]=> string(1) " " ["ytfw"]=> string(1) "-" ["hot_or_top"]=> string(1) "0" ["yqjtd_pintopin"]=> string(1) " " ["yqjtd_jianrong"]=> string(1) " " }	select a.wl_num,a.parent_id,GROUP_CONCAT(b.cat_name,' ',a.cat_name) as lb,a.action_name,a.rate,a.rate_hot,ROUND(sum(a.rate+a.rate_hot/100),4) as moq_rate from golon_ics_category a left join golon_ics_category b on a.parent_id=b.id where a.mpn_bm='golon_jtg_fet_mosfet_d' array(1) { [0]=> array(7) { ["wl_num"]=> string(4) "1039" ["parent_id"]=> string(3) "121" ["lb"]=> string(26) "晶体管单通道MOS管" ["action_name"]=> string(4) "jtg8" ["rate"]=> string(5) "1.145" ["rate_hot"]=> string(2) "35" ["moq_rate"]=> string(6) "1.4950" } } 型号： EPC2034ENGR复制状态：在售修改品牌： EPC复制封装：模具外壳：模具描述： TRANS GAN 200V 31A BUMPED DIE	SELECT * FROM `golon_jtg_fet_mosfet_d` WHERE ( `id` = 11506 ) LIMIT 1 Fet类型：GaNFET N 通道，氮化镓漏源极电压(vdss)：200V 电流-连续漏极(id)：31A（Ta） Vgs(最大值)：功率-最大值：- 工作温度：-40°C ~ 150°C（TJ）	类别：单通道MOS管丝印：(请登录) 料号：103911506 资料：规格书/封装库	0755-28435922 量大可议价	购买数量不能超过商品库存，已为您修正！起订量:10 修改包装量: 托盘修改个个托盘咨询客服	加入购物车

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